公开(公告)号：US10096455B2

公开(公告)日：2018-10-09

申请号：US14486223

申请日：2014-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh Nguyen ,  Rongjun Wang ,  Muhammad M. Rasheed ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/56

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 1:2 to about 1:1.6.

公开(公告)号：US09633839B2

公开(公告)日：2017-04-25

申请号：US14744688

申请日：2015-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Weimin Zeng ,  Thanh X. Nguyen ,  Yana Cheng ,  Yong Cao ,  Daniel Lee Diehl ,  Srinivas Guggilla ,  Rongjun Wang ,  Xianmin Tang

IPC: H01L21/02

CPC classification number: H01L21/0234 ,  H01L21/0214 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266

Abstract: In some embodiments a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) depositing a dielectric layer to a first thickness atop a first surface of the substrate via a physical vapor deposition process; (b) providing a first plasma forming gas to a processing region of the physical vapor deposition process chamber, wherein the first plasma forming gas comprises hydrogen but not carbon; (c) providing a first amount of bias power to a substrate support to form a first plasma from the first plasma forming gas within the processing region of the physical vapor deposition process chamber; (d) exposing the dielectric layer to the first plasma; and (e) repeating (a)-(d) to deposit the dielectric film to a final thickness.

公开(公告)号：US08895450B2

公开(公告)日：2014-11-25

申请号：US14054477

申请日：2013-10-15

Applicant: Applied Materials, Inc.

Inventor： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/28 ,  C23C14/35 ,  H01L21/285 ,  C23C14/34 ,  H01L29/49 ,  C23C14/16 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。

公开(公告)号：US20140238843A1

公开(公告)日：2014-08-28

申请号：US13777010

申请日：2013-02-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Thanh X. Nguyen ,  Rongjun Wang ,  Muhammad M. Rasheed ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3408 ,  C23C14/35 ,  C23C14/564 ,  H01J37/3288 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3476

Abstract: A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction.

Abstract translation: 特别适用于RF等离子体溅射的双重磁控管包括径向固定的开环磁控管，其包括相对的磁极并围绕中心轴线旋转以扫描溅射靶的外部区域和包括相对的磁极的可径向移动的开环磁控管 连同固定磁控管。 在处理过程中，可移动磁控管径向定位在外部区域中，开口端与固定磁控管的开口端相接触以形成单个开环磁控管。 在清洁期间，可移动磁控管的一部分径向向内移动以扫描和清洁未被固定磁控管扫描的目标的内部区域。 可移动磁控管可以安装在围绕安装固定磁控管的旋转盘形板的周边处的轴线枢转的臂上，使得臂根据旋转速率或方向离心地在径向位置之间移动。

公开(公告)号：US12243774B2

公开(公告)日：2025-03-04

申请号：US17853150

申请日：2022-06-29

Applicant: Applied Materials, Inc.

Inventor： Rui Li ,  Xiangjin Xie ,  Tae Hong Ha ,  Xianmin Tang ,  Lu Chen

IPC: H01L21/44 ,  C23C16/34 ,  C23C16/455 ,  H01L21/768

Abstract: Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.

公开(公告)号：US20240331999A1

公开(公告)日：2024-10-03

申请号：US18442681

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Ying-Bing Jiang ,  Avgerinos V. Gelatos ,  Joung Joo Lee ,  Bencherki Mebarki ,  Xianmin Tang ,  In Seok Hwang ,  Zhijun Chen

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0206 ,  H01L21/31111

Abstract: Exemplary semiconductor processing methods may include providing a substrate to a processing region of a semiconductor processing chamber. The substrate may include an alternating stack of materials. A feature may extend through the alternating stack of materials. One material of the alternating stack of materials may include a silicon-containing material. A native oxide material may be disposed on at least a portion of exposed surfaces of the silicon-containing material. The methods may include performing a pre-clean treatment on the substrate. The methods may include providing a fluorine-containing precursor to the processing region. The methods may include contacting the substrate with the fluorine-containing precursor, wherein the contacting removes native oxide from the silicon-containing material.

公开(公告)号：US11830728B2

公开(公告)日：2023-11-28

申请号：US17499955

申请日：2021-10-13

Applicant: Applied Materials, Inc.

Inventor： Chengyu Liu ,  Ruitong Xiong ,  Bo Xie ,  Xianmin Tang ,  Yijun Liu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/3205 ,  H01L21/762

CPC classification number: H01L21/02244 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/32051 ,  H01L21/76227

Abstract: A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.

公开(公告)号：US11810770B2

公开(公告)日：2023-11-07

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/345 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US11587873B2

公开(公告)日：2023-02-21

申请号：US16909148

申请日：2020-06-23

Applicant: Applied Materials, Inc.

Inventor： Gang Shen ,  Feng Chen ,  Yizhak Sabba ,  Tae Hong Ha ,  Xianmin Tang ,  Zhiyuan Wu ,  Wenjing Xu

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Described are microelectronic devices comprising a dielectric layer formed on a substrate, a feature comprising a gap defined in the dielectric layer, a barrier layer on the dielectric layer, a two metal liner film on the barrier layer and a gap fill metal on the two metal liner. Embodiments provide a method of forming a microelectronic device comprising the two metal liner film on the barrier layer.

公开(公告)号：US20230017035A1

公开(公告)日：2023-01-19

申请号：US17844181

申请日：2022-06-20

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Thai Cheng Chua ,  Christian W. Valencia ,  Joung Joo Lee ,  Xianmin Tang ,  Xiao Chen

IPC: C23C16/27 ,  C23C16/56 ,  C23C16/511 ,  C23C16/52

Abstract: A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.