公开(公告)号：US08658242B2

公开(公告)日：2014-02-25

申请号：US13193539

申请日：2011-07-28

申请人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

发明人： Christopher D. Bencher ,  Roman Gouk ,  Steven Verhaverbeke ,  Li-Qun Xia ,  Yong-Won Lee ,  Matthew D. Scotney-Castle ,  Martin A. Hilkene ,  Peter I. Porshnev

IPC分类号： B05D5/12

CPC分类号： G11B5/85 ,  G11B5/743 ,  G11B5/855

摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

摘要翻译： 提供了一种形成磁性介质基板的方法和装置。 在具有磁敏感层的基底上形成图案化的抗蚀剂层。 在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。 对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。 然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

公开(公告)号：US20140023794A1

公开(公告)日：2014-01-23

申请号：US13948492

申请日：2013-07-23

申请人： Maitreyee Mahajani ,  Steven D. Marcus ,  Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Ning Li ,  Jingjing Liu ,  Sukti Chatterjee ,  Timothy W. Weidman

发明人： Maitreyee Mahajani ,  Steven D. Marcus ,  Li-Qun Xia ,  Mihaela Balseanu ,  Victor Nguyen ,  Ning Li ,  Jingjing Liu ,  Sukti Chatterjee ,  Timothy W. Weidman

IPC分类号： C23C16/32 ,  C23C16/36 ,  C23C16/34

CPC分类号： C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45534 ,  C23C16/4554

摘要： Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.

摘要翻译： 提供了用于致密化薄膜的低温原子层沉积的方法和装置。 通过暴露于一种或多种等离子体或自由基物质形成并致密化低温膜。 所得到的致密化膜对于不致密化而形成的低温膜具有优异的性能。

公开(公告)号：US08586487B2

公开(公告)日：2013-11-19

申请号：US13353063

申请日：2012-01-18

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/469

CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

公开(公告)号：US08569166B2

公开(公告)日：2013-10-29

申请号：US13152865

申请日：2011-06-03

申请人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

发明人： Francimar Campana Schmitt ,  Li-Qun Xia ,  Son Van Nguyen ,  Shankar Venkataraman

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/325 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02351 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.

公开(公告)号：US20130192761A1

公开(公告)日：2013-08-01

申请号：US13754733

申请日：2013-01-30

申请人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

发明人： Joseph Yudovsky ,  Ralf Hofmann ,  Jeonghoon Oh ,  Li-Qun Xia ,  Toshiaki Fujita ,  Pravin K. Narwankar ,  Nag B, Patibandla ,  Srinivas Satya ,  Banqiu Wu

IPC分类号： C23C16/54 ,  B05C13/00

CPC分类号： C23C16/54 ,  B05C13/00 ,  C23C16/45551

摘要： A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system.

摘要翻译： 提供了一种用于处理多个基板的基板处理系统，并且通常包括至少一个处理平台和至少一个分段平台。 每个衬底位于设置在衬底支撑组件上的衬底载体上。 多个衬底载体，每个被配置为在其上承载衬底，位于衬底支撑组件的表面上。 处理平台和分段平台各自包括单独的基板支撑组件，其可以通过单独的旋转轨道机构旋转。 每个旋转轨道机构能够支撑基板支撑组件并且连续旋转由基板载体承载并且设置在基板支撑组件上的多个基板。 因此，每个基板通过至少一个淋浴喷头站和至少一个缓冲站进行处理，所述至少一个缓冲站位于处理平台的旋转轨道机构上方的距离处。 每个基板可以在处理平台和分段平台之间传送并进出基板处理系统。

公开(公告)号：US20130183835A1

公开(公告)日：2013-07-18

申请号：US13353063

申请日：2012-01-18

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/318

CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

公开(公告)号：US08283237B2

公开(公告)日：2012-10-09

申请号：US12978129

申请日：2010-12-23

申请人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

发明人： Nagarajan Rajagopalan ,  Ji Ae Park ,  Ryan Yamase ,  Shamik Patel ,  Thomas Nowak ,  Li-Qun Xia ,  Bok Hoen Kim ,  Ran Ding ,  Jim Baldino ,  Mehul Naik ,  Sesh Ramaswami

IPC分类号： H01L21/30 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/31

CPC分类号： H01L24/13 ,  H01L21/02074 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6835 ,  H01L21/68792 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/742 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2224/11002 ,  H01L2224/11452 ,  H01L2224/1182 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00

摘要： A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

摘要翻译： 通过硅通孔的制造方法包括通过使用其间的粘合剂层将硅板的前表面粘合到载体上来形成基板，以暴露硅板的背面。 氮化硅钝化层沉积在衬底的硅板的暴露的背面上。 在硅板中蚀刻多个通孔，通孔包括侧壁和底壁。 金属导体沉积在通孔中以形成多个通硅通孔。

公开(公告)号：US07910491B2

公开(公告)日：2011-03-22

申请号：US12437256

申请日：2009-05-07

申请人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

发明人： Young Soo Kwon ,  Bi Jang ,  Anchuan Wang ,  Young S. Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Jin Ho Jeon

IPC分类号： H01L21/302

CPC分类号： H01L21/76224 ,  H01L21/02112 ,  H01L21/02247 ,  H01L21/02304 ,  H01L21/318

摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.

摘要翻译： 描述了填充沟槽的方法，并且包括在含氟蚀刻化学中沉积具有高比率的氧化硅与介电衬里蚀刻速率的介电衬垫。 氧化硅沉积在沟槽内并蚀刻以重新打开或加宽沟槽顶部附近的间隙。 电介质衬垫在蚀刻工艺期间保护下面的衬底，从而可以使间隙更宽。 氧化硅再次沉积在沟槽内以基本上填充沟槽。

公开(公告)号：US07745328B2

公开(公告)日：2010-06-29

申请号：US12255644

申请日：2008-10-21

申请人： Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

发明人： Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

摘要： Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

摘要翻译： 提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。 碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。 还提供了沉积氧掺杂的碳化硅阻挡层的方法。 可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。 或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

公开(公告)号：US20080132087A1

公开(公告)日：2008-06-05

申请号：US12013232

申请日：2008-01-11

申请人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

发明人： Li-Qun Xia ,  Frederic Gaillard ,  Ellie Yieh ,  Tian H. Lim

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/0218 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02071 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76837 ,  Y10S438/931

摘要： A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.

摘要翻译： 一种用于提供具有增强的粘合性和稳定性的电介质膜的方法。 该方法包括在还原气氛中使膜致密化的后沉积处理，以提高如果该膜不原位固化的稳定性。 致密化通常在还原环境中进行，同时加热基底。 致密化处理特别适用于在低温下沉积的硅 - 氧 - 碳低介电常数膜。