摘要:
A method of forming a button-type battery includes: a) providing a sheet of cathode material bonded to solid electrolyte material; b) cutting the cathode material and solid electrolyte material from the sheet into a plurality of composite cathode/solid electrolyte pieces which are individually sized and shaped to constitute the electrolyte and cathode components of a single button-type battery; c) providing a pair of first and second terminal housing members in facing juxtaposition to one another, the first and second terminal housing members having respective peripheries; d) providing one of the composite cathode/electrolyte pieces intermediate the juxtaposed first and second terminal housing members; e) providing an anode intermediate the juxtaposed first and second terminal housing members, the anode being positioned to electrically connect with one of the first or second terminal housing members and the solid electrolyte, and the cathode being positioned to electrically connect with the other of the first or second terminal housing members; f) providing electrically insulative sealing gasket material intermediate the first and second terminal housing member peripheries; and g) crimping the first and second terminal housing member peripheries together into an enclosed dry battery housing with the gasket material being interposed between the first and second terminal housing members to provide a fluid-tight seal and to provide electrical insulation therebetween. A button-type battery is also disclosed.
摘要:
A process for manufacturing a low contact resistance electrical bonding interconnect having a metal bond pad portion and conductive epoxy portion. The conductive epoxy portion comprises a metal oxide reducing agent for reducing oxides formed during the fabrication of the bonding interconnect.
摘要:
The present invention develops a bond pad interconnect in an integrated circuit device, by forming an aluminum pad; bonding a metal layer (such as copper (Cu), nickel (Ni), tungsten (W), gold (Au), silver (Ag) or platinum (Pt)) or a metal alloy (such as titanium nitride) to the aluminum bond pad by chemical vapor deposition or by electroless deposition; and adhering a conductive epoxy film to the metal layer, thereby forming a low resistive bond pad interconnect.
摘要:
A polishing pad for semiconductor wafers, having a face shaped to provide a constant, or nearly constant, surface contact rate to a workpiece such as a semiconductor wafer, in order to effect improved planarity of the workpiece. The favored face shape is a sunburst pattern having nontapered rays, coaxial with the pad's rotation.
摘要:
A masked, conformal electrodeposition process for copper metallization of integrated circuits. The process is considerably less complex than other metallization processes utilizing electrodeposition, and provides excellent step coverage for sub-micron contact openings. Full-step coverage has been obtained with the process for contact openings as small as 0.5 microns in diameter. The process begins with the blanket sputter or LPCVD deposition of a thin conductive barrier layer of a material such as titanium nitride, titanium-tungsten or nitrided titanium-tungsten. A photoresist reverse image of the maskwork that normally would be used to etch the metallization pattern on the circuitry is created on the wafer on top of the barrier layer. As an option, the reverse image of the desired metallization pattern may be created by etching a dielectric material layer such as silicon dioxide or silicon nitride, using a photoresist reverse image as a template. The wafer is then transferred to an electrolytic bath, preferably with a pH of 13.5, in which copper is complexed with EDTA molecules. Metallic copper is deposited on the barrier layer where it is not covered by photoresist. At current densities of less than 1 milliamp/cm.sup.2, the process will automatically fill contact/via openings to a uniform thickness which is independent of the depth of the opening. Following electrodeposition of the metallization layer to the desired thickness, the wafer is removed from the bath, and the photoresist or dielectric material reverse-pattern mask is stripped. At this point, an optional corrosion-resistant metal layer may be galvanically plated on the surface of the copper layer. Finally, portions of the barrier layer that were exposed by removal of the resist are then removed with either a wet or a dry etch.
摘要:
Microfeature workpieces having interconnects and conductive backplanes and associated systems and methods are disclosed herein. One such device includes a semiconductor substrate having integrated circuitry and terminals electrically coupled to the integrated circuitry. The device also includes electrically conductive interconnects extending through at least a portion of the semiconductor substrate and electrically coupled to corresponding terminals. The device further includes a conductive backplane assembly having a conductive layer at a back side of the semiconductor substrate. One or more of the interconnects are electrically coupled to the conductive layer at the back side of the semiconductor substrate.
摘要:
A plurality of battery-operated transceivers encapsulated by lamination to form a sheet of independent transceivers is tested in a two piece fixture that forms an enclosure surrounding each in-sheet transceiver. Each enclosure has an antenna for transmitting a command signal to the transceiver at a known power level and for receiving a reply message from the transceiver containing a power level measurement made by the transceiver. Test methods using the fixture of the present invention are also described. An RFID tag and interrogator may each include a transmitter and a receiver. The tag and interrogator may communicate with each other at different frequency bands and may communicate in accordance with a wireless communication protocol.
摘要:
The present invention relates to methods for forming through-wafer interconnects in semiconductor substrates and the resulting structures. In one embodiment, a method for forming a through-wafer interconnect includes providing a substrate having a pad on a surface thereof, depositing a passivation layer over the pad and the surface of the substrate, and forming an aperture through the passivation layer and the pad using a substantially continuous process. An insulative layer is deposited in the aperture followed by a conductive layer and a conductive fill. In another embodiment of the invention, a semiconductor device is formed including a first interconnect structure that extends through a conductive pad and is electrically coupled with the conductive pad while a second interconnect structure is formed through another conductive pad while being electrically isolated therefrom. Semiconductor devices and assemblies produced with the methods are also disclosed.
摘要:
A radio frequency identification (RFID) interrogator housed in a portable platform that includes at least one antenna, a transceiver for transmitting and receiving a radio frequency (RF) signal through the antenna, and a controller in communication with the transceiver for adjusting power and direction of the transmitted RF signal. The controller can be configured to adjust the antenna orientation, and can also selectively activate and deactivate one or more antennas.
摘要:
The present invention teaches a method of manufacturing an enclosed transceiver, such as a radio frequency identification (“RFID”) tag. Structurally, in one embodiment, the tag comprises an integrated circuit (IC) chip, and an RF antenna mounted on a thin film substrate powered by a thin film battery. A variety of antenna geometries are compatible with the above tag construction. These include monopole antennas, dipole antennas, dual dipole antennas, a combination of dipole and loop antennas. Further, in another embodiment, the antennas are positioned either within the plane of the thin film battery or superjacent to the thin film battery.