公开(公告)号：US20070222540A1

公开(公告)日：2007-09-27

申请号：US11689848

申请日：2007-03-22

申请人： Michihiko Nishigaki ,  Ryoichi Ohara ,  Minoru Kawase ,  Kazuhiko Itaya

发明人： Michihiko Nishigaki ,  Ryoichi Ohara ,  Minoru Kawase ,  Kazuhiko Itaya

IPC分类号： H03H9/70

CPC分类号： H03H9/706 ,  H03H9/0571

摘要： An antenna sharing device has a common signal terminal pair, a first terminal pair, a second terminal pair, a first filter, a second filter, a first inductor element, second inductor elements, third inductor elements. The second and third inductor elements have a plurality of inductor elements, respectively. An inductor element closest to the first terminal pair among the inductor elements included in the second inductor elements and an inductor element closest to the second terminal pair among the third inductor elements are arranged further away from the first inductor element than the other inductor elements included in the second and third inductor elements, or formed on a substrate different from a substrate on which the first inductor element is formed, or formed opposite to the first inductor element by sandwiching a shielding pattern.

摘要翻译： 天线共享装置具有公共信号端子对，第一端子对，第二端子对，第一滤波器，第二滤波器，第一电感器元件，第二电感器元件，第三电感器元件。 第二和第三电感元件分别具有多个电感器元件。 包括在第二电感器元件中的电感器元件中最接近第一端子对的电感器元件和最靠近第三电感器元件中的第二端子对的电感器元件被布置成远离第一电感器元件，而不是包括在其中的其它电感器元件 第二和第三电感器元件，或形成在不同于其上形成有第一电感器元件的衬底的衬底上，或者通过夹持屏蔽图案与第一电感器元件相对形成。

公开(公告)号：US20070196920A1

公开(公告)日：2007-08-23

申请号：US11507674

申请日：2006-08-22

申请人： Kazuhiro Suzuki ,  Yujiro Naruse ,  Hideyuki Funaki ,  Kazuhiko Itaya ,  Shuichi Uchikoga

发明人： Kazuhiro Suzuki ,  Yujiro Naruse ,  Hideyuki Funaki ,  Kazuhiko Itaya ,  Shuichi Uchikoga

IPC分类号： C12N15/09 ,  C12N15/00 ,  C12M3/00

CPC分类号： A61N5/00 ,  A61N1/406 ,  A61N5/0601

摘要： A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.

摘要翻译： 细胞变形装置包括用作隔膜并保持含有有害细胞和纳米级粒子的混合介质，AC电压源，加热器和电感器的微型盘。 交流电压供给面与微型菜肴2具有空间，并向微型菜肴2施加偏压，使得纳米级颗粒被轰击到有害细胞上并将其破坏。

公开(公告)号：US20070194662A1

公开(公告)日：2007-08-23

申请号：US11675811

申请日：2007-02-16

申请人： Kenya Sano ,  Kazuhiko Itaya ,  Ryoichi Ohara ,  Takashi Kawakubo

发明人： Kenya Sano ,  Kazuhiko Itaya ,  Ryoichi Ohara ,  Takashi Kawakubo

IPC分类号： H01L41/00

CPC分类号： H03H9/564 ,  H03H3/02 ,  H03H9/174 ,  H03H9/568 ,  H03H2003/023

摘要： A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.

摘要翻译： 薄膜压电谐振器包括：具有空腔的基板; 设置在所述基板上以覆盖所述空腔的第一介电层; 第二电介质层，设置在所述基板上并且设置在所述空腔的周边区域中，并且具有比所述第一介电层大的厚度; 第一电极，其设置在所述第一介电层上并且在所述空腔上方; 压电层，设置在所述第一电极上并且设置成延伸到所述第二电介质层上的区域; 以及设置在所述压电层上和所述第一电极上方的第二电极。

公开(公告)号：US20060279382A1

公开(公告)日：2006-12-14

申请号：US11447999

申请日：2006-06-07

申请人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Ryoichi Ohara ,  Naoko Yanase ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H03H9/58 ,  H03H9/56

CPC分类号： H03H9/02133 ,  H03H3/02 ,  H03H9/02157 ,  H03H9/13 ,  H03H9/174 ,  H03H2003/023

摘要： A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.

公开(公告)号：US20060001508A1

公开(公告)日：2006-01-05

申请号：US11169645

申请日：2005-06-30

申请人： Ryoichi Ohara ,  Naoko Yanase ,  Kazuhiko Itaya ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takashi Kawakubo

发明人： Ryoichi Ohara ,  Naoko Yanase ,  Kazuhiko Itaya ,  Kenya Sano ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Toshihiko Nagano ,  Michihiko Nishigaki ,  Takashi Kawakubo

IPC分类号： H03H9/56

CPC分类号： H03H9/02094 ,  H03H3/04 ,  H03H9/02133 ,  H03H9/173 ,  H03H9/174 ,  H03H9/703 ,  H03H2003/021 ,  H03H2003/023

摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.

摘要翻译： 薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

公开(公告)号：US20050184627A1

公开(公告)日：2005-08-25

申请号：US11043257

申请日：2005-01-27

申请人： Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

发明人： Kenya Sano ,  Ryoichi Ohara ,  Naoko Yanase ,  Takaaki Yasumoto ,  Kazuhiko Itaya ,  Takashi Kawakubo ,  Hiroshi Toyoda ,  Masahiko Hasunuma ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Hironobu Shibata

IPC分类号： H01L41/047 ,  H01L41/22 ,  H03H3/02 ,  H03H9/02 ,  H03H9/15 ,  H03H9/17

CPC分类号： H03H9/02015 ,  H01H2057/006 ,  H01L41/0477 ,  H01L41/094 ,  H01L41/316 ,  H01L41/319 ,  H03H3/02 ,  H03H9/02094 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H9/542 ,  H03H9/582 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023 ,  H03H2003/025 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49117 ,  Y10T29/49155

摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

摘要翻译： 压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。 压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

公开(公告)号：US5410159A

公开(公告)日：1995-04-25

申请号：US128643

申请日：1993-09-30

申请人： Hideto Sugawara ,  Kazuhiko Itaya

发明人： Hideto Sugawara ,  Kazuhiko Itaya

IPC分类号： H01L21/203 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/18 ,  H01S5/343 ,  H01L29/205 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/34326 ,  H01S5/18

摘要： A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.

摘要翻译： 从与衬底相反的一侧发射光的发光二极管包括第一导电类型的化合物半导体衬底，形成在由第一导电类型的InGaAlP组成的衬底端上的下包层， 并且具有通过交替层叠阻挡层和八个以上的量子阱层而构成的量子阱结构，以及形成在发光层上并由第二导电型的InGaAlP构成的上部包层 。

公开(公告)号：US09041182B2

公开(公告)日：2015-05-26

申请号：US13688823

申请日：2012-11-29

申请人： Toshihiko Nagano ,  Kazuhide Abe ,  Hiroshi Yamada ,  Kazuhiko Itaya ,  Taihei Nakada

发明人： Toshihiko Nagano ,  Kazuhide Abe ,  Hiroshi Yamada ,  Kazuhiko Itaya ,  Taihei Nakada

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L23/055 ,  H01L23/10 ,  H01L23/00 ,  H01L23/66

CPC分类号： H01L23/48 ,  H01L21/78 ,  H01L23/055 ,  H01L23/10 ,  H01L23/66 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/14181 ,  H01L2224/16235 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81205 ,  H01L2224/814 ,  H01L2224/81411 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/81986 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/1515 ,  H01L2924/15788 ,  H01L2924/16153 ,  H01L2224/81 ,  H01L2924/01079 ,  H01L2924/01014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A semiconductor package according to embodiments includes: a semiconductor chip including a front electrode on a front surface thereof and a back electrode on a back surface thereof; a front-side cap portion including an air gap in a portion between the semiconductor chip and the front-side cap portion and a front-side penetrating electrode, and is positioned to face the front surface of the semiconductor chip; a back-side cap portion bonded with a first cap portion to hermetically seal the semiconductor chip, includes an air gap at least in a portion between the semiconductor chip and the back-side cap portion and a back-side penetrating electrode, and is positioned to face the back surface of the semiconductor chip; a front-side connecting portion which electrically connects the front electrode and the front-side penetrating electrode; and a back-side connecting portion which electrically connects the back electrode and the back-side penetrating electrode.

摘要翻译： 根据实施例的半导体封装包括：半导体芯片，其前表面包括前电极，背面具有背电极; 在半导体芯片和前侧盖部分之间的部分中包括气隙的前侧盖部分和前侧穿透电极，并且被定位成面向半导体芯片的前表面; 与第一帽部接合以密封半导体芯片的背面盖部分至少在半导体芯片和背面侧帽部分之间的部分和背面贯通电极之间包括气隙，并且位于 面对半导体芯片的背面; 电连接前电极和前侧穿透电极的前侧连接部; 以及将背面电极和背面贯通电极电连接的背面侧连接部。

公开(公告)号：US20120228755A1

公开(公告)日：2012-09-13

申请号：US13235386

申请日：2011-09-18

申请人： Toshihiko NAGANO ,  Hiroshi Yamada ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Taihei Nakada

发明人： Toshihiko NAGANO ,  Hiroshi Yamada ,  Kazuhide Abe ,  Kazuhiko Itaya ,  Taihei Nakada

IPC分类号： H01L23/053 ,  H01L21/56

CPC分类号： H01L23/04 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor module includes a high frequency chip, an insulating cap, a through electrode, interconnections, and an insulating layer. The insulating cap forms a hollow with the chip to cover the chip. The through electrode passes through a first plane of the cap and a second plane of the cap, the first plane facing the chip, the second plane being on a side opposite to the first plane. The interconnections are provided on the cap and connected to the through electrode. The insulating layer is provided on the cap and fills a portion between the interconnections therewith.

摘要翻译： 半导体模块包括高频芯片，绝缘帽，通孔，互连和绝缘层。 绝缘盖形成具有芯片的中空以覆盖芯片。 所述贯通电极通过所述盖的第一平面和所述盖的第二平面，所述第一平面面向所述芯片，所述第二平面位于与所述第一平面相对的一侧。 互连设置在盖上并连接到通孔。 绝缘层设置在盖上并填充与其互连之间的部分。

公开(公告)号：US08008760B2

公开(公告)日：2011-08-30

申请号：US12370927

申请日：2009-02-13

申请人： Hiroshi Yamada ,  Kazuhiko Itaya ,  Yutaka Onozuka ,  Hideyuki Funaki

发明人： Hiroshi Yamada ,  Kazuhiko Itaya ,  Yutaka Onozuka ,  Hideyuki Funaki

IPC分类号： H01L23/02

CPC分类号： H01L25/0655 ,  B81B7/0054 ,  B81C1/00238 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/82 ,  H01L25/16 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/92144 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/30105 ,  H01L2924/3511 ,  H01L2924/00

摘要： An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.

摘要翻译： 集成半导体器件包括具有不同集成元件电路或不同尺寸的多个半导体元件; 布置在所述半导体元件之间的绝缘材料; 完全设置在半导体元件和绝缘材料上的有机绝缘膜; 布置在有机绝缘膜上并连接半导体元件的精细薄层布线; 布置在所述绝缘材料的区域上的第一输入/输出电极; 以及形成在所述第一输入/输出电极上的第一凸块电极。