公开(公告)号：US20110287588A1

公开(公告)日：2011-11-24

申请号：US13195639

申请日：2011-08-01

申请人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/56

CPC分类号： H01L23/4334 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/48 ,  H01L25/03 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A heat-dissipating semiconductor package structure and a method for manufacturing the same is disclosed. The method includes: disposing on and electrically connecting to a chip carrier at least a semiconductor chip and a package unit; disposing on the top surface of the package unit a heat-dissipating element having a flat portion and a supporting portion via the flat portion; receiving the package unit and semiconductor chip in a receiving space formed by the flat portion and supporting portion of the heat-dissipating element; and forming on the chip carrier encapsulant for encapsulating the package unit, semiconductor chip, and heat-dissipating element. The heat-dissipating element dissipates heat generated by the package unit, provides EMI shielding, prevents delamination between the package unit and the encapsulant, decreases thermal resistance, and prevents cracking.

摘要翻译： 公开了一种散热半导体封装结构及其制造方法。 该方法包括：在至少半导体芯片和封装单元上布置并电连接到芯片载体; 在所述封装单元的顶表面上设置有经由所述平坦部分具有平坦部分和支撑部分的散热元件; 在由散热元件的平坦部分和支撑部分形成的接收空间中接收封装单元和半导体芯片; 以及在芯片载体密封剂上形成以封装封装单元，半导体芯片和散热元件。 散热元件消散封装单元产生的热量，提供EMI屏蔽，防止封装单元与密封剂之间的分层，降低热阻，防止开裂。

公开(公告)号：US20100267202A1

公开(公告)日：2010-10-21

申请号：US12829704

申请日：2010-07-02

申请人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/50

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

摘要翻译： 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。

公开(公告)号：US20100233855A1

公开(公告)日：2010-09-16

申请号：US12788772

申请日：2010-05-27

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/56

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2224/82 ,  H01L2924/00

摘要： A chip scale package structure and a method for fabricating the same are disclosed. The method includes forming metal pads on a predetermined part of a carrier; mounting chips on the carrier, each of the chips having a plurality of conductive bumps soldered to the metal pads; forming an encapsulant on the carrier to encapsulate the chips and the conductive bumps; removing the carrier to expose the metal pads and even the metal pads with a surface of the encapsulant; forming on the encapsulant a plurality of first conductive traces electrically connected to the metal pads; applying a solder mask on the first conductive traces, and forming a plurality of openings on the solder mask to expose a predetermined part of the first conductive traces; forming a plurality of conductive elements on the predetermined part; and cutting the encapsulant to form a plurality of chip scale package structures.

摘要翻译： 公开了一种芯片级封装结构及其制造方法。 该方法包括在载体的预定部分上形成金属垫; 在载体上安装芯片，每个芯片具有焊接到金属焊盘的多个导电凸块; 在载体上形成密封剂以封装芯片和导电凸块; 移除载体以暴露金属垫和甚至具有密封剂表面的金属垫; 在所述密封剂上形成电连接到所述金属焊盘的多个第一导电迹线; 在所述第一导电迹线上施加焊接掩模，以及在所述焊接掩模上形成多个开口以暴露所述第一导电迹线的预定部分; 在所述预定部分上形成多个导电元件; 以及切割所述密封剂以形成多个芯片级封装结构。

公开(公告)号：US07772685B2

公开(公告)日：2010-08-10

申请号：US11591974

申请日：2006-11-01

申请人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/02

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

摘要翻译： 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。

公开(公告)号：US07732913B2

公开(公告)日：2010-06-08

申请号：US11701767

申请日：2007-02-02

申请人： Tsung-Tien Hsieh ,  Wen-Jung Chiang ,  Yu-Po Wang ,  Cheng-Hsu Hsiao ,  Sen-Yen Yang

发明人： Tsung-Tien Hsieh ,  Wen-Jung Chiang ,  Yu-Po Wang ,  Cheng-Hsu Hsiao ,  Sen-Yen Yang

IPC分类号： H01L23/04

CPC分类号： H01L23/49827 ,  H01L23/64 ,  H01L2223/6638 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/0245 ,  H05K1/0251 ,  H05K1/114 ,  H05K3/429 ,  H05K2201/09236 ,  H05K2201/09636 ,  H05K2201/09718 ,  H01L2924/00

摘要： A semiconductor package substrate is provided, which includes a substrate body having a plurality of conductive through holes formed therein, wherein at least two adjacent conductive through holes are formed as a differential pair, each of which has a ball pad formed at an end thereof; and at least one electrically integrated layer formed in the substrate body, and having an opening corresponding to the two adjacent conductive through holes formed as the differential pair and the ball pads thereof. Thus, the spacing between the conductive through holes and the electrically integrated layer and the spacing between the ball pads can be enlarged by the opening, so as to balance the impedance match.

摘要翻译： 提供了一种半导体封装基板，其包括其中形成有多个导电通孔的基板主体，其中至少两个相邻的导电通孔形成为差分对，每个导体通孔在其一端形成有球垫; 以及形成在所述基板主体中的至少一个电气集成层，并且具有与形成为所述差动对的两个相邻的导电通孔对应的开口及其球垫。 因此，可以通过开口来扩大导电通孔和电气集成层之间的间隔以及球垫之间的间隔，从而平衡阻抗匹配。

公开(公告)号：US07638879B2

公开(公告)日：2009-12-29

申请号：US11985662

申请日：2007-11-16

申请人： Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3121 ,  H01L21/561 ,  H01L21/6835 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a metal carrier, applying an insulation layer on the sacrificial layer, and forming through holes in the sacrificial layer and the insulation layer to expose the metal carrier; forming a conductive metallic layer in each through hole; forming a patterned circuit layer on the insulation layer to be electrically connected to the conductive metallic layer; mounting at least a chip on the insulation layer and electrically connecting the chip to the patterned circuit layer; forming an encapsulant to encapsulate the chip and the patterned circuit layer; and removing the metal carrier and the sacrificial layer to expose the insulation layer and conductive metallic layer to allow the conductive metallic layer to protrude from the insulation layer. In the present invention, the distance between the semiconductor package and the external device is increased, and thermal stress caused by difference between the thermal expansion coefficients is reduced, so as to enhance the reliability of the product.

摘要翻译： 公开了半导体封装和制造方法。 制造方法包括在金属载体的一个表面上施加牺牲层，在牺牲层上施加绝缘层，以及在牺牲层和绝缘层中形成通孔以露出金属载体; 在每个通孔中形成导电金属层; 在所述绝缘层上形成图案化电路层，以电连接到所述导电金属层; 将至少一个芯片安装在所述绝缘层上并将所述芯片电连接到所述图案化电路层; 形成密封剂以封装所述芯片和所述图案化电路层; 并且去除金属载体和牺牲层以暴露绝缘层和导电金属层，以允许导电金属层从绝缘层突出。 在本发明中，半导体封装和外部器件之间的距离增加，由于热膨胀系数之差导致的热应力降低，从而提高了产品的可靠性。

公开(公告)号：US20090261476A1

公开(公告)日：2009-10-22

申请号：US12148319

申请日：2008-04-18

申请人： Chien-Ping Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

发明人： Chien-Ping Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao ,  Chun-Chi Ke

IPC分类号： H01L23/482 ,  H01L21/60

CPC分类号： H01L24/19 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/24 ,  H01L24/82 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/24226 ,  H01L2224/82001 ,  H01L2225/1035 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311

摘要： A semiconductor device and a manufacturing method thereof are disclosed. The method includes the steps of providing a carrier board having conductive circuits disposed thereon and a plurality of chips with active surfaces having solder pads disposed thereon, wherein conductive bumps are disposed on the solder pads; mounting chips on the carrier board; filling the spacing between the chips with a dielectric layer and forming openings in the dielectric layer at periphery of each chip to expose the conductive circuits; forming a metal layer in the openings of the dielectric layer and at periphery of the active surface of the chips for electrically connecting the conductive bumps and the conductive circuits; and cutting along the dielectric layer between the chips and removing the carrier board to separate each chip and exposing the conductive circuits from the non-active surface.

摘要翻译： 公开了一种半导体器件及其制造方法。 该方法包括以下步骤：提供具有布置在其上的导电电路的载体板和具有设置在其上的焊料焊盘的有源表面的多个芯片，其中导电凸块设置在焊盘上; 将芯片安装在载板上; 用电介质层填充芯片之间的间隔，并在每个芯片周边的电介质层中形成开口以露出导电电路; 在所述电介质层的开口部和所述芯片的有源面的外围形成金属层，用于电连接所述导电凸块和所述导电电路; 并沿着芯片之间​​的电介质层切割并去除载体板以分离每个芯片并使导电电路与非活性表面相接触。

公开(公告)号：US07564140B2

公开(公告)日：2009-07-21

申请号：US11411740

申请日：2006-04-25

申请人： Wen-Hao Lee ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Wen-Hao Lee ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/563 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83051 ,  H01L2224/83102 ,  H01L2224/83385 ,  H01L2224/83951 ,  H01L2224/92125 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor package and a substrate structure thereof are provided. A solder mask layer applied on the substrate structure is formed with outwardly extended openings corresponding to corner portions of a chip mounting area of the substrate structure. When a flip-chip semiconductor chip is mounted on the chip mounting area and an underfilling process is performed, an underfill material can fill a gap between the flip-chip semiconductor chip and the substrate structure, and effectively fill the outwardly extended openings of the solder mask layer corresponding to the corner portions of the chip mounting area so as to provide sufficient protection for corners of the flip-chip semiconductor chip and prevent delamination at the corners of the flip-chip semiconductor chip during a subsequent thermal cycle.

摘要翻译： 提供半导体封装及其基板结构。 施加在基板结构上的焊接掩模层形成有对应于基板结构的芯片安装区域的角部的向外延伸的开口。 当倒装芯片半导体芯片安装在芯片安装区域并执行底部填充工艺时，底部填充材料可以填充倒装芯片半导体芯片和基板结构之间的间隙，并且有效地填充焊料的向外延伸的开口 掩模层对应于芯片安装区域的角部，以便为倒装芯片半导体芯片的拐角提供足够的保护，并防止在随后的热循环期间倒装芯片半导体芯片的拐角处的分层。

公开(公告)号：US20090014860A1

公开(公告)日：2009-01-15

申请号：US12011832

申请日：2008-01-29

申请人： Chung-Lun Liu ,  Jung-Pin Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

发明人： Chung-Lun Liu ,  Jung-Pin Huang ,  Chin-Huang Chang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/00 ,  H01L23/02

CPC分类号： H01L25/0652 ,  H01L25/18 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00012

摘要： A multi-chip stack structure and a manufacturing method thereof are provided. The fabrication method includes the steps of: providing a chip carrier having a first surface and a second surface opposing thereto and at least a first chip and a second chip mounted on the first surface; electrically connecting the chips to the chip carrier by a plurality of bonding wires; and stacking at least a third chip on the first and second chips by a film deposed therebetween, wherein the third chip is stepwise stacked on the first chip and at least a part of the bonding wire connected to the second chip is covered by the film, and electrically connecting the third chip and the chip carrier by a bonding wire, thereby enabling a plurality of chips to be stacked on the chip carrier to enhance the electrical performance of electronic products.

摘要翻译： 提供了一种多芯片堆叠结构及其制造方法。 该制造方法包括以下步骤：提供具有与其相对的第一表面和第二表面的芯片载体和至少安装在第一表面上的第一芯片和第二芯片; 通过多个接合线将芯片电连接到芯片载体上; 并且通过其间放置的膜将第一和第二芯片上的至少第三芯片堆叠起来，其中第三芯片逐步堆叠在第一芯片上，并且连接到第二芯片的键合线的至少一部分被膜覆盖， 并通过接合线电连接第三芯片和芯片载体，从而能够将多个芯片堆叠在芯片载体上，以增强电子产品的电气性能。

公开(公告)号：US07445957B2

公开(公告)日：2008-11-04

申请号：US11580560

申请日：2006-10-12

申请人： Chien-Ping Huang ,  Cheng-Hsu Hsiao ,  Chih-Ming Huang

发明人： Chien-Ping Huang ,  Cheng-Hsu Hsiao ,  Chih-Ming Huang

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/6835 ,  H01L21/568 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/20 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2224/82 ,  H01L2924/00

摘要： A wafer level semiconductor package with a build-up layer is provided, which includes a glass frame having a through hole for receiving a semiconductor chip therein, a low-modulus buffer material filled within the space formed between the semiconductor chip and the glass frame, a build-up layer formed on the glass frame and the semiconductor chip such that the build-up layer is electrically connected to the semiconductor chip, and a plurality of conductive elements mounted on the build-up layer so that the semiconductor chip is electrically connected to external devices. With the use of the glass frame and low-modulus buffer material, the wafer level semiconductor package thus-obtained is free from warpage, chip-crack, and delamination problems and the reliability thereof is enhanced. A method for fabricating the wafer level semiconductor package is also provided.

摘要翻译： 提供具有积层的晶片级半导体封装，其包括具有用于接收其中的半导体芯片的通孔的玻璃框架，填充在形成在半导体芯片和玻璃框架之间的空间内的低模量缓冲材料， 形成在所述玻璃框架和所述半导体芯片上的堆积层，使得所述积层层电连接到所述半导体芯片，以及安装在所述积层层上的多个导电元件，使得所述半导体芯片电连接 到外部设备。 通过使用玻璃框架和低模量缓冲材料，由此获得的晶片级半导体封装没有翘曲，芯片裂纹和分层问题，并且其可靠性得到提高。 还提供了一种用于制造晶片级半导体封装的方法。