公开(公告)号：US20050025205A1

公开(公告)日：2005-02-03

申请号：US10831687

申请日：2004-04-26

申请人： Tatsuya Ryowa ,  Masaya Ishida ,  Yukiko Morishita ,  Takeshi Kamikawa ,  Kensaku Motoki

发明人： Tatsuya Ryowa ,  Masaya Ishida ,  Yukiko Morishita ,  Takeshi Kamikawa ,  Kensaku Motoki

IPC分类号： H01L21/205 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0218 ,  H01S5/02276 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01S2304/12 ,  H01L2924/00

摘要： To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (113) formed on the top surface of a semiconductor layered structure is located off the area right above a dislocation (crystal defect)-concentrated region (X) of the substrate. Concentration of dislocations in the substrate spreads to the layered structure, producing a dislocation-concentrated region in the part of the layered structure located right above the dislocation-concentrated region of the substrate. If a wire is bonded above this region, the pressure applied when the wire is bonded causes the metal of which the electrode is made to diffuse along the concentrated dislocations, lowering the quality of the layered structure and thus resulting in deterioration of the element. Bonding a wire elsewhere than above the dislocation-concentrated region (X) helps prevent such deterioration.

摘要翻译： 为了防止在包含氮化物半导体衬底上的具有氮化物半导体的半导体激光元件的激光器件中导线引起的劣化，导线（301）与形成在顶部上的电极（113）接合的位置 半导体层叠结构的表面位于基板的位错（晶体缺陷） - 集中区域（X）正上方的区域的外侧。 底物中的位错浓度扩散到层状结构，在位于基底的位错集中区域正上方的层状结构部分中产生位错集中区域。 如果在该区域上接合线，则在导线接合时施加的压力使得电极的金属沿着浓集的位错扩散，降低了层状结构的质量，从而导致元件的劣化。 将电线连接到位于位错集中区域（X）以上的电线有助于防止这种变质。

公开(公告)号：US06693021B1

公开(公告)日：2004-02-17

申请号：US09560818

申请日：2000-04-28

申请人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

发明人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B25/00 ,  C30B29/406 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/0206 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/04 ,  Y10S117/902 ,  Y10S438/942

摘要： The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.

摘要翻译： 制造GaN单晶衬底的方法包括掩模层形成步骤，在GaAs衬底2上形成具有彼此分离设置的多个开口窗口10的掩模层8; 以及在掩模层8上生长由GaN制成的外延层12的外延层生长步骤。

公开(公告)号：US06413627B1

公开(公告)日：2002-07-02

申请号：US09333879

申请日：1999-06-15

申请人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto ,  Tatsuya Nishimoto

发明人： Kensaku Motoki ,  Takuji Okahisa ,  Naoki Matsumoto ,  Tatsuya Nishimoto

IPC分类号： B32B516

CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/406 ,  C30B29/60 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0079 ,  Y10T428/26

摘要： A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a GaN epitaxial layer on the buffer layers and the mask by an HVPE or an MOC, eliminating the GaAs substrate and the mask away and obtaining a freestanding GaN single crystal substrate. The GaN single crystal has a diameter larger than 20 mm and a thickness more than 0.07 mm, being freestanding and substantially distortion-free.

摘要翻译： 通过制备（111）GaAs单晶衬底，在（111）GaAs衬底上形成具有周期性布置的窗口的掩模的步骤制成独立的GaN单晶衬底，在GaAs衬底的窗口中形成薄的GaN缓冲层 掩模，通过HVPE或MOC在缓冲层上生长GaN外延层和掩模，消除GaAs衬底和掩模，并获得独立的GaN单晶衬底。 GaN单晶的直径大于20mm，厚度大于0.07mm，独立且无变形。

公开(公告)号：US5970314A

公开(公告)日：1999-10-19

申请号：US823237

申请日：1997-03-24

申请人： Takuji Okahisa ,  Mitsuru Shimazu ,  Masato Matsushima ,  Yoshiki Miura ,  Kensaku Motoki ,  Hisashi Seki ,  Akinori Koukitu

发明人： Takuji Okahisa ,  Mitsuru Shimazu ,  Masato Matsushima ,  Yoshiki Miura ,  Kensaku Motoki ,  Hisashi Seki ,  Akinori Koukitu

IPC分类号： C30B25/02 ,  C30B29/38 ,  H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01L33/34 ,  H01S5/00 ,  H01S5/323 ,  H01L21/00 ,  C30B25/14 ,  H01L21/20 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L33/0075

摘要： A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0

摘要翻译： 在衬底上形成氮化铟镓In x Ga 1-x N（其中0

公开(公告)号：US08502238B2

公开(公告)日：2013-08-06

申请号：US13688021

申请日：2012-11-28

申请人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

发明人： Shigetoshi Ito ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Mototaka Taneya ,  Zenpei Tani ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/2018 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0207 ,  H01S5/2231 ,  H01S5/3013 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173

摘要： A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 μm or more.

公开(公告)号：US08404569B2

公开(公告)日：2013-03-26

申请号：US12949268

申请日：2010-11-18

申请人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

发明人： Hitoshi Kasai ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/00

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

公开(公告)号：US08198177B2

公开(公告)日：2012-06-12

申请号：US13281106

申请日：2011-10-25

申请人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

发明人： Seiji Nakahata ,  Ryu Hirota ,  Kensaku Motoki ,  Takuji Okahisa ,  Kouji Uematsu

IPC分类号： H01L21/322

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02642 ,  H01L21/02647

摘要： Seeds are implanted in a regular pattern upon an undersubstrate. An AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0

摘要翻译： 将种子以规则的图案植入到下衬底上。 通过小平面生长法在混合晶体生长在种子植入的底层基底上，使Al x In y Ga 1-x-y N（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1,0

公开(公告)号：US07928447B2

公开(公告)日：2011-04-19

申请号：US11487321

申请日：2006-07-17

申请人： Toru Matsuoka ,  Kensaku Motoki

发明人： Toru Matsuoka ,  Kensaku Motoki

IPC分类号： H01L27/15

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B25/04 ,  H01L33/0075

摘要： A GaN crystal substrate is provided, which has a diameter of not less than 20 mm and a thickness of not less than 70 μm and not more than 450 μm, and has a light absorption coefficient of not less than 7 cm−1 and not more than 68 cm−1 for light in the wavelength range of not less than 375 nm and not more than 500 nm. A fabricating method of the GaN crystal substrate, and a light-emitting device fabricated using the GaN crystal substrate are also provided.

摘要翻译： 提供一种GaN晶体基板，其直径不小于20mm，厚度不小于70μm且不大于450μm，并且具有不小于7cm -1的光吸收系数，而不是更多 对于不小于375nm且不大于500nm的波长范围内的光，超过68cm -1。 还提供了GaN晶体衬底的制造方法和使用该GaN晶体衬底制造的发光器件。

公开(公告)号：US07919831B2

公开(公告)日：2011-04-05

申请号：US12652602

申请日：2010-01-05

申请人： Kensaku Motoki ,  Masaki Ueno

发明人： Kensaku Motoki ,  Masaki Ueno

IPC分类号： H01L31/0304

CPC分类号： C30B23/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/207

摘要： The present invention is a nitride semiconductor device including an n-type gallium nitride single crystal substrate, an epitaxially grown nitride film on the substrate, and electrodes deposited on a top and a bottom of the substrate. In order to produce the substrate, oxygen is doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride bulk crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride bulk crystal, and eliminating the seed crystal from the bulk crystal.

摘要翻译： 本发明是一种氮化物半导体器件，其包括n型氮化镓单晶衬底，在衬底上的外延生长氮化物膜，以及沉积在衬底的顶部和底部的电极。 为了制造衬底，通过制备C面氮化镓晶种或三旋转对称平面异物晶种，将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C- 平面氮化镓晶种或三旋转对称外来晶种，在晶种上生长具有非C面的小面的C面氮化镓块状晶体，保持C面氮化镓块状晶体上的刻面 ，并从本体晶体中消除晶种。

公开(公告)号：US07903707B2

公开(公告)日：2011-03-08

申请号：US10554991

申请日：2004-05-27

申请人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

发明人： Takeshi Kamikawa ,  Yoshika Kaneko ,  Kensaku Motoki

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02636 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

摘要： A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

摘要翻译： 一种氮化物半导体发光器件，其中衬底或氮化物半导体层具有缺陷浓度区域和除缺陷浓度区域之外的低缺陷密度区域。 包含氮化物半导体层或衬底的缺陷浓度区域的部分具有比低缺陷密度区域更深的沟槽区域。 因此，通过挖掘缺陷浓度区域中的沟槽，生长检测是均匀的，并且表面平面度得到改善。 晶片表面的特性的均匀性导致产率的提高。