DC/DC converter including a Zener diode having a substantially zero temperature coefficient
    83.
    发明授权
    DC/DC converter including a Zener diode having a substantially zero temperature coefficient 失效
    DC / DC转换器包括具有基本为零温度系数的齐纳二极管

    公开(公告)号:US07123488B2

    公开(公告)日:2006-10-17

    申请号:US10998234

    申请日:2004-11-24

    IPC分类号: H02M3/335

    CPC分类号: H02M3/3385 H02M1/10 H02M1/32

    摘要: A DC/DC converter has a transformer having a primary winding, a secondary winding, and an auxiliary winding, a switching transistor connected in series to the primary winding, a control transistor for turning the switching transistor on or off, and a feedback control circuit connected to the control transistor and the auxiliary winding. The feedback control circuit includes a Zener diode having a substantially zero temperature coefficient. The Zener diode has a Zener voltage which lies in a range between 5 volts and 6 volts. In order to cancel a temperature characteristic of the control transistor, the temperature coefficient of the Zener diode is selected.

    摘要翻译: DC / DC转换器具有初级绕组,次级绕组和辅助绕组的变压器,与初级绕组串联连接的开关晶体管,用于使开关晶体管导通或关断的控制晶体管和反相控制电路 连接到控制晶体管和辅助绕组。 反馈控制电路包括基本为零的温度系数的齐纳二极管。 齐纳二极管具有位于5伏至6伏范围内的齐纳电压。 为了消除控制晶体管的温度特性,选择齐纳二极管的温度系数。

    Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture
    84.
    发明授权
    Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture 有权
    半导体器件适用于形成具有良好覆盖性的铂等导电膜及其制造

    公开(公告)号:US07102189B2

    公开(公告)日:2006-09-05

    申请号:US10745967

    申请日:2003-12-29

    IPC分类号: H01L27/108

    摘要: A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.

    摘要翻译: 紧密接触层设置在半导体衬底上,紧密接触层由选自耐火金属,难熔金属合金,难熔金属氮化物和难熔金属的氮化硅组成的组中的一种材料制成。 氧化物表面层设置在紧密接触层的表面上,氧化物表面层由构成紧密接触层的材料的氧化物制成。 第一导电层设置在氧化物表面层的表面上,第一导电层由含有铂族的铂族或合金制成。 当在紧密接触层上形成由诸如铂族基团的金属制成的导电层时,可以防止覆盖和形态的劣​​化。

    Liquid container
    86.
    发明申请
    Liquid container 审中-公开
    液体容器

    公开(公告)号:US20060144865A1

    公开(公告)日:2006-07-06

    申请号:US10547255

    申请日:2004-03-05

    IPC分类号: B65D37/00 B65D83/14

    CPC分类号: A47J41/022 A47J41/0033

    摘要: It is constructed such that a closed space (12b) of an inner container (12) having a heat retaining property which constitutes a liquid container (1B) is able to be closed airtightly by closing of a lid structure (141). Contact between stored liquid and the atmosphere is shut off by making the inside of the closed space be in an inert gas atmosphere. It is constructed such that the stored liquid is able to be discharged by pressure of supplied inert gas at a time of opening of a discharge valve (168) communicating with the inner container. Oxidation deterioration of liquid is effectively prevented by shut-off from the atmosphere. When the stored liquid is discharged in small portions, preventive effect is maintained by continual supply of inert gas.

    摘要翻译: 其构造使得能够通过关闭盖结构(141)气密地闭合构成液体容器(1B)的具有保温性的内部容器(12)的封闭空间(12b)。 通过使封闭空间的内部处于惰性气体气氛中,可以切断储存液体与大气之间的接触。 其结构使得在与内部容器连通的排出阀(168)打开时,储存的液体能够通过供给的惰性气体的压力排出。 通过从大气中的切断有效地防止了液体的氧化劣化。 当储存的液体以小部分排出时,通过连续供应惰性气体来保持预防效果。

    DC/DC converter including a zener diode having a substantially zero temperature coefficient
    89.
    发明申请
    DC/DC converter including a zener diode having a substantially zero temperature coefficient 失效
    DC / DC转换器包括具有基本为零温度系数的齐纳二极管

    公开(公告)号:US20050162872A1

    公开(公告)日:2005-07-28

    申请号:US10998234

    申请日:2004-11-24

    IPC分类号: H02M1/10 H02M3/338 H02M3/335

    CPC分类号: H02M3/3385 H02M1/10 H02M1/32

    摘要: A DC/DC converter has a transformer having a primary winding, a secondary winding, and an auxiliary winding, a switching transistor connected in series to the primary winding, a control transistor for turning the switching transistor on or off, and a feedback control circuit connected to the control transistor and the auxiliary winding. The feedback control circuit includes a Zener diode having a substantially zero temperature coefficient. The Zener diode has a Zener voltage which lies in a range between 5 volts and 6 volts. In order to cancel a temperature characteristic of the control transistor, the temperature coefficient of the Zener diode is selected.

    摘要翻译: DC / DC转换器具有初级绕组,次级绕组和辅助绕组的变压器,与初级绕组串联连接的开关晶体管,用于使开关晶体管导通或关断的控制晶体管和反相控制电路 连接到控制晶体管和辅助绕组。 反馈控制电路包括基本为零的温度系数的齐纳二极管。 齐纳二极管具有位于5伏至6伏范围内的齐纳电压。 为了消除控制晶体管的温度特性,选择齐纳二极管的温度系数。