公开(公告)号：US07884459B2

公开(公告)日：2011-02-08

申请号：US12210645

申请日：2008-09-15

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L23/02

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US20050167812A1

公开(公告)日：2005-08-04

申请号：US11062735

申请日：2005-02-23

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L23/522 ,  H01L25/065 ,  H01L29/76

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US08216934B2

公开(公告)日：2012-07-10

申请号：US12976089

申请日：2010-12-22

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US20090008798A1

公开(公告)日：2009-01-08

申请号：US12210645

申请日：2008-09-15

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L23/52

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US5801439A

公开(公告)日：1998-09-01

申请号：US804270

申请日：1997-02-21

申请人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kosuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

发明人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kosuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

IPC分类号： H01L23/28 ,  H01L23/495 ,  H01L23/50 ,  H01L25/10 ,  H01L25/11 ,  H01L25/18 ,  H01L23/48 ,  H01L27/10

CPC分类号： H01L23/4951 ,  H01L25/105 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/12042

摘要： A semiconductor device includes a semiconductor element, a package sealing the semiconductor element, and leads for passing signals between the semiconductor element and an external device. Each of the leads has an inner-lead part sealed within the package and connected with the semiconductor element, and an outer-lead part which extends outward from the package toward a top of the package, and is to be connected to the external device. The outer-lead part includes a first-port part at a lower side of the package, and a second-port part at an upper side of the package.

摘要翻译： 半导体器件包括半导体元件，密封半导体元件的封装以及用于在半导体元件和外部器件之间传递信号的引线。 每个引线具有密封在封装内并与半导体元件连接的内引线部分，以及从封装向外朝向封装顶部延伸并且连接到外部装置的外引线部分。 外引线部分包括在封装的下侧的第一端口部分和在封装的上侧的第二端口部分。

公开(公告)号：US5760471A

公开(公告)日：1998-06-02

申请号：US794763

申请日：1997-02-03

申请人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kousuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

发明人： Tetsuya Fujisawa ,  Mitsutaka Sato ,  Junichi Kasai ,  Masataka Mizukoshi ,  Kousuke Otokita ,  Hiroshi Yoshimura ,  Katsuhiro Hayashida ,  Akira Takashima ,  Masahiko Ishiguri ,  Michio Sono

IPC分类号： H01L23/495 ,  H01L25/10 ,  H01L23/48 ,  H01L23/02 ,  H01L23/12 ,  H01L23/50

CPC分类号： H01L23/4951 ,  H01L23/49551 ,  H01L25/105 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/8547 ,  H01L2225/1005 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2225/107 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12042

摘要： A semiconductor device including a semiconductor element, and leads connected with the semiconductor element. Each of the leads includes an outer lead part for being connected externally. The semiconductor device further includes a plastic package sealing the semiconductor element and the leads. In the semiconductor device, the outer lead part is exposed to the outside of a side face of the plastic package, and the plastic package is mounted on any base in a standing form by the side face contacting the base.

摘要翻译： 包括半导体元件的半导体器件和与半导体元件连接的引线。 每个引线包括用于外部连接的外引线部分。 半导体器件还包括密封半导体元件和引线的塑料封装。 在半导体器件中，外部引线部分暴露于塑料封装的侧面的外侧，塑料封装通过与底座接触的侧面以立式形式安装在任何基座上。

公开(公告)号：US06869819B2

公开(公告)日：2005-03-22

申请号：US10321629

申请日：2002-12-18

申请人： Mitsuhisa Watanabe ,  Yoshikazu Kumagaya ,  Akira Takashima

发明人： Mitsuhisa Watanabe ,  Yoshikazu Kumagaya ,  Akira Takashima

IPC分类号： H01L21/68 ,  G01B11/00 ,  G01R31/26 ,  G03F9/00 ,  G06K9/00 ,  H01L21/00 ,  H01L21/50 ,  H01L21/66 ,  H01L21/683 ,  H01L21/78 ,  H01L21/784 ,  H01L23/44 ,  H01L23/544

CPC分类号： H01L21/78 ,  H01L21/67092 ,  H01L21/681 ,  H01L23/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high-contrast image recognition can be performed by recognizing an image of a recognition mark from a back surface of a wafer by a visible-light camera by irradiating a visible light from a circuit pattern surface of a silicon substrate. A thickness of the silicon substrate is set to 5 μm to 50 μm. A white or visible light having a wavelength equal to or less than 800 nm is irradiated onto the circuit-pattern forming surface of the substrate. A visible light that has transmitted through the silicon substrate is received by a visible-light camera on a side of a back surface of the silicon substrate. An image of a recognition mark formed on the circuit-pattern forming surface of the silicon substrate is recognized by the visible-light camera.

摘要翻译： 通过从硅衬底的电路图案表面照射可见光，可以通过可见光照相机从晶片的背面识别识别标记的图像来执行高对比度图像识别。 将硅衬底的厚度设定为5μm至50μm。 将具有等于或小于800nm的波长的白色或可见光照射到基板的电路图案形成表面上。 通过硅衬底透射的可见光被可见光照相机接收在硅衬底背面的一侧上。 形成在硅衬底的电路图案形成表面上的识别标记的图像由可见光照相机识别。

公开(公告)号：US08810043B2

公开(公告)日：2014-08-19

申请号：US13195325

申请日：2011-08-01

申请人： Takao Nishimura ,  Yoshikazu Kumagaya ,  Akira Takashima ,  Kouichi Nakamura ,  Kazuyuki Aiba

发明人： Takao Nishimura ,  Yoshikazu Kumagaya ,  Akira Takashima ,  Kouichi Nakamura ,  Kazuyuki Aiba

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L25/065

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49833 ,  H01L24/13 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14 ,  H01L2224/1411 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17107 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2225/06558 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05541 ,  H01L2224/05005

摘要： A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

摘要翻译： 半导体器件包括具有设置有外部连接端子焊盘的主表面的半导体元件。 半导体元件经由设置在外部连接端子焊盘上的多个凸形外部连接端子和连接构件连接到支撑板上的导电层; 并且连接构件通常覆盖凸形外部连接端子。

公开(公告)号：US06960827B2

公开(公告)日：2005-11-01

申请号：US10817808

申请日：2004-04-06

申请人： Takao Nishimura ,  Tadashi Uno ,  Hiroshi Onodera ,  Akira Takashima

发明人： Takao Nishimura ,  Tadashi Uno ,  Hiroshi Onodera ,  Akira Takashima

IPC分类号： H01L25/18 ,  H01L25/065 ,  H01L25/07 ,  H01L25/10 ,  H01L25/11 ,  H01L23/34

CPC分类号： H01L25/03 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/00

摘要： A stacked-type semiconductor device has a reduced overall height and an improved reliability in the mechanical strength of the stacked structure. The semiconductor device also has an improved heat release characteristic. A first interposer has a surface on which first electrode pads are formed and a first semiconductor element is mounted with a circuit forming surface facing the first interposer. A second interposer has a surface on which second electrode pads are formed and a second semiconductor element is mounted with a circuit forming surface facing the second interposer. External connection terminals are provided on a surface of the second interposer opposite to the surface on which the second semiconductor element is mounted. The first and second interposers are electrically connected to each other by conductive members provided therebetween. A back surface of the first semiconductor element and a back surface of the second semiconductor element are fixed to each other by an adhesive.

摘要翻译： 叠层型半导体器件具有降低的整体高度和提高层叠结构的机械强度的可靠性。 该半导体器件还具有改善的放热特性。 第一插入件具有其上形成有第一电极焊盘的表面，并且第一半导体元件安装有面向第一插入件的电路形成表面。 第二插入件具有其上形成有第二电极焊盘的表面，并且第二半导体元件安装有面向第二插入件的电路形成表面。 外部连接端子设置在与安装有第二半导体元件的表面相对的第二插入件的表面上。 第一和第二插入件通过设置在它们之间的导电构件彼此电连接。 第一半导体元件的背面和第二半导体元件的背面通过粘合剂彼此固定。

公开(公告)号：US08076785B2

公开(公告)日：2011-12-13

申请号：US11474406

申请日：2006-06-26

申请人： Takao Nishimura ,  Yoshikazu Kumagaya ,  Akira Takashima ,  Kouichi Nakamura ,  Kazuyuki Aiba

发明人： Takao Nishimura ,  Yoshikazu Kumagaya ,  Akira Takashima ,  Kouichi Nakamura ,  Kazuyuki Aiba

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3128 ,  H01L21/563 ,  H01L23/49811 ,  H01L23/49833 ,  H01L24/13 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/1134 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14 ,  H01L2224/1411 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17107 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/81193 ,  H01L2224/81194 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2225/06558 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05541 ,  H01L2224/05005

摘要： A semiconductor device includes a semiconductor element having a main surface where an outside connection terminal pad is provided. The semiconductor element is connected to a conductive layer on a supporting board via a plurality of convex-shaped outside connection terminals provided on the outside connection terminal pad and a connection member; and the connection member commonly covers the convex-shaped outside connection terminals.

摘要翻译： 半导体器件包括具有设置有外部连接端子焊盘的主表面的半导体元件。 半导体元件经由设置在外部连接端子焊盘上的多个凸形外部连接端子和连接构件连接到支撑板上的导电层; 并且连接构件通常覆盖凸形外部连接端子。