公开(公告)号：US07884459B2

公开(公告)日：2011-02-08

申请号：US12210645

申请日：2008-09-15

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L23/02

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US20050167812A1

公开(公告)日：2005-08-04

申请号：US11062735

申请日：2005-02-23

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/485 ,  H01L23/522 ,  H01L25/065 ,  H01L29/76

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US08216934B2

公开(公告)日：2012-07-10

申请号：US12976089

申请日：2010-12-22

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US20090008798A1

公开(公告)日：2009-01-08

申请号：US12210645

申请日：2008-09-15

申请人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

发明人： Eiji Yoshida ,  Takao Ohno ,  Yoshito Akutagawa ,  Koji Sawahata ,  Masataka Mizukoshi ,  Takao Nishimura ,  Akira Takashima ,  Mitsuhisa Watanabe

IPC分类号： H01L23/52

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/13008 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/45144 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

摘要翻译： 提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。 在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。 通过蚀刻形成孔，电极焊盘用作蚀刻停止层。 埋入电极形成在孔中。 该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

公开(公告)号：US06732911B2

公开(公告)日：2004-05-11

申请号：US09970802

申请日：2001-10-05

申请人： Hirohisa Matsuki ,  Hiroyuki Matsui ,  Eiji Yoshida ,  Takao Ohno ,  Koki Otake ,  Akiyo Mizutani ,  Motoshu Miyajima ,  Masataka Mizukoshi ,  Eiji Watanabe

发明人： Hirohisa Matsuki ,  Hiroyuki Matsui ,  Eiji Yoshida ,  Takao Ohno ,  Koki Otake ,  Akiyo Mizutani ,  Motoshu Miyajima ,  Masataka Mizukoshi ,  Eiji Watanabe

IPC分类号： B23K3538

CPC分类号： B23K1/008 ,  B23K2101/36 ,  H05K3/3489

摘要： There is provided a chamber open to the outside through openings through which a solder-adhered object is passed and the chamber having a heating/melting area, a carrying mechanism for carrying the solder-adhered object into the heating/melting area, a formic-acid supplying means for supplying a formic acid into the heating/melting area, an exhausting means for exhausting a gas from the heating/melting area and its neighboring area to create a lower pressure area in the heating/melting area as compared to the pressure of outside the chamber, heating means for heating directly or indirectly the solder-adhered object in the heating/melting area, and an air-stream suppressing means for disturbing a gas flow between the heating/melting area and the carrying areas. Accordingly, there can be provided a solder jointing system for jointing solder layers of a semiconductor device, an electronic device, or the like to the wirings or the pads, which is capable of having a high processing ability and preventing re-oxidation.

摘要翻译： 设置有通过开口穿过焊料粘附物体的开口的室，并且具有加热/熔化区域的室，用于将焊料粘附物携带到加热/熔融区域中的承载机构， 用于将甲酸供应到加热/熔化区域的酸供应装置，用于从加热/熔化区域及其相邻区域排出气体的排气装置，以在加热/熔化区域中产生较低压力区域， 在室外，用于在加热/熔化区域中直接或间接加热焊接物体的加热装置，以及用于扰乱加热/熔化区域和承载区域之间的气流的气流抑制装置。 因此，可以提供一种用于将半导体器件，电子器件等的焊料层接合到布线或焊盘上的焊接接合系统，其能够具有高处理能力并防止再氧化。

公开(公告)号：US07395847B2

公开(公告)日：2008-07-08

申请号：US11075721

申请日：2005-03-10

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： B32B37/00

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

摘要翻译： 本发明涉及一种制造半导体衬底的方法，该半导体衬底包括晶片的后研磨步骤，切割步骤，拾取步骤和芯片键合步骤; 以及用于这种方法的半导体衬底夹具。 本发明的目的是减轻效果并且防止由于在减薄的半导体衬底中的强度不足而引起的损坏。 提供了具有外框架21的夹具和布置在外框架21内的橡胶膜22，并且通过在其中供应空气使其形状变形而具有越来越小的体尺寸。 当橡胶膜22的体积增加时，晶片固定夹具20使橡胶膜变形，并且允许布置在晶片1和橡胶膜22A之间的带2和6从中心向外逐渐推向晶片1 。 使用这种晶片固定夹具进行安装步骤，后研磨步骤，带重新施加步骤，拾取步骤和芯片粘合步骤。

公开(公告)号：US20050221589A1

公开(公告)日：2005-10-06

申请号：US11075758

申请日：2005-03-10

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： H01L21/68 ,  H01L21/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

公开(公告)号：US20050221587A1

公开(公告)日：2005-10-06

申请号：US11075712

申请日：2005-03-10

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： H01L21/68 ,  H01L21/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

公开(公告)号：US06902944B2

公开(公告)日：2005-06-07

申请号：US10708067

申请日：2004-02-06

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： H01L21/68 ,  H01L21/00 ,  H01L21/301 ,  H01L21/304 ,  H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

公开(公告)号：US06750074B2

公开(公告)日：2004-06-15

申请号：US10101169

申请日：2002-03-20

申请人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

发明人： Kazuo Teshirogi ,  Yuzo Shimobeppu ,  Kazuhiro Yoshimoto ,  Mitsuhisa Watanabe ,  Yoshiaki Shinjo ,  Eiji Yoshida ,  Noboru Hayasaka

IPC分类号： H01L2100

CPC分类号： H01L21/67092 ,  B24B37/042 ,  B32B37/003 ,  B32B37/1018 ,  B32B38/0012 ,  B32B2310/0831 ,  B32B2457/14 ,  H01L21/304 ,  H01L21/67132 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/07802 ,  Y10T29/5313 ,  Y10T29/53191 ,  Y10T428/1452 ,  H01L2924/3512 ,  H01L2924/00

摘要： The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to a semiconductor substrate jig used in such method. The object of the present invention is to mitigate the effect and to prevent damage caused by the lack of strength in thinned semiconductor substrates. A jig with an outer frame 21, and a rubber film 22 arranged within the outer frame 21 and having increasing and decreasing body size while deforming its shape by supplying air therein are provided. As the volume of the rubber film 22 increases, the wafer-fixing jig 20 deforms the rubber film and allows the tapes 2 and 6 arranged between the wafer 1 and the rubber film 22A to be pushed toward the wafer 1 gradually from the center outward. The attachment step, the back grind step, the tape reapplication step, the pick up step and the die bonding step are conducted using such wafer-fixing jig.

摘要翻译： 本发明涉及一种制造半导体衬底的方法，该半导体衬底包括晶片的后研磨步骤，切割步骤，拾取步骤和芯片键合步骤; 以及用于这种方法的半导体衬底夹具。 本发明的目的是减轻效果并且防止由于在减薄的半导体衬底中的强度不足而引起的损坏。 提供了具有外框架21的夹具和布置在外框架21内的橡胶膜22，并且通过在其中供应空气使其形状变形而具有越来越小的体尺寸。 随着橡胶膜22的体积增加，晶片固定夹具20使橡胶膜变形，并且允许布置在晶片1和橡胶膜22A之间的带2和6从中心向外逐渐推向晶片1。 使用这种晶片固定夹具进行安装步骤，后研磨步骤，带重新施加步骤，拾取步骤和芯片粘合步骤。