公开(公告)号：US08545628B2

公开(公告)日：2013-10-01

申请号：US12305553

申请日：2007-11-16

Applicant: Chantal Arena ,  Christiaan Werkhoven

Inventor： Chantal Arena ,  Christiaan Werkhoven

IPC: C30B35/00 ,  C30B13/28 ,  C30B23/00 ,  C23C16/00

CPC classification number: C30B25/14 ,  C23C16/303 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/481 ,  C23C16/54 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1008

Abstract: The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Abstract translation: 本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

公开(公告)号：US20130206070A1

公开(公告)日：2013-08-15

申请号：US13757155

申请日：2013-02-01

Applicant: WELL THIN TECHNOLOGY, LTD.

Inventor： Ben CHEN

IPC: C23C16/458

CPC classification number: C23C16/458 ,  C23C16/4401 ,  C23C16/4585

Abstract: A deposition ring is used on thin film deposition equipment which includes a chuck to hold a wafer. The deposition ring is arranged on the circumferential wall of the chuck and includes an inner ring and a protective member. The inner ring is adjacent to the circumferential wall. The protective member is jutting from the inner ring and has a circumferential surface, a barrier surface and a tip edge. The circumferential surface opposes the circumferential wall. The barrier surface and circumferential surface form an acute angle between them. The tip edge is formed between the circumferential surface and barrier surface. Through the protective member, the probability of adhering deposition particles to the back of the wafer is greatly reduced. The protective member is formed in a structure with a gradually increasing bottom, hence can provide higher stress resistant capability and overcome the easy fracturing problem in the conventional techniques.

Abstract translation: 在包括夹持晶片的卡盘的薄膜沉积设备上使用沉积环。 沉积环布置在卡盘的周向壁上，并且包括内圈和保护构件。 内环与周壁相邻。 保护构件从内圈突出并具有圆周表面，阻挡表面和尖端边缘。 圆周面与周壁相对。 屏障表面和圆周表面之间形成锐角。 尖端边缘形成在圆周表面和阻挡表面之间。 通过保护构件，沉积颗粒附着到晶片背面的可能性大大降低。 保护构件形成为具有逐渐增加的底部的结构，因此可以提供更高的抗应力能力并克服常规技术中容易的压裂问题。

公开(公告)号：US20130205611A1

公开(公告)日：2013-08-15

申请号：US13766285

申请日：2013-02-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Yusuke TACHINO ,  Hiromi SHIMA

IPC: F26B19/00

CPC classification number: F26B19/00 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/45525 ,  C23C16/45563 ,  C23C16/45587 ,  Y10T137/2931

Abstract: Provided is a gas supply apparatus having a source gas supply system configured to supply a source gas to a processing container using a carrier gas, wherein the source gas is generated from a liquid raw material consisting of an organic metal material. The gas supply apparatus includes a raw material storage tank configured to store the liquid raw material therein; a gas supply portion installed to the raw material storage tank and connected to a carrier gas passage, wherein the carrier gas passage allows the carrier gas to flow; a gas outflow portion installed to the raw material storage tank and connected to a source gas passage, wherein the source gas passage allows the source gas to flow; and a baffle plate configured to prevent the carrier gas injected from the gas supply portion from being brought into direct contact with a liquid surface of the raw material.

Abstract translation: 提供一种气体供给装置，其具有源气体供给系统，该源气体供给系统构造成使用载气将源气体供给到处理容器，其中源气体由由有机金属材料构成的液体原料产生。 气体供给装置包括：原料容纳槽，其配置为在其中储存液体原料; 气体供给部，其安装在原料储罐上并与载气通道连接，其中载气通道允许载气流动; 气体流出部分安装在原料储罐上并连接到源气体通道，其中源气体通道允许源气体流动; 以及挡板，其构造成防止从气体供给部喷射的载气与原料的液面直接接触。

公开(公告)号：US08491720B2

公开(公告)日：2013-07-23

申请号：US12637028

申请日：2009-12-14

Applicant: Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

Inventor： Tetsuya Ishikawa ,  David H. Quach ,  Anzhong Chang ,  Olga Kryliouk ,  Yuriy Melnik ,  Harsukhdeep S. Ratia ,  Son T. Nguyen ,  Lily Pang

IPC: C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C22/02

CPC classification number: C30B29/403 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/46 ,  C30B25/02 ,  C30B29/406 ,  Y10T137/479 ,  Y10T137/4807 ,  Y10T137/4824 ,  Y10T137/7504 ,  Y10T137/8376

Abstract: Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

Abstract translation: 本文公开的实施例通常涉及HVPE室。 腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。 例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。 氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。 不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

公开(公告)号：US20130167295A1

公开(公告)日：2013-07-04

申请号：US13778101

申请日：2013-02-26

Applicant: Footsiebath LLC

Inventor： GENYA VINOKUR ,  Sasha Vinkur ,  Michael Vinokur

IPC: A61H35/00

CPC classification number: A61H35/006 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/50 ,  H01J37/32128 ,  H01J37/32174 ,  H01J37/32844 ,  Y02C20/30

Abstract: A soaking basin is provided having a base unit, a disposable liner, and a frame nested therebetween to enable removal of the liner from the base unit, even when filled with liquid. In this manner, a user can remove the liner filled with liquid to pour out the liquid and discard the liner, after a treatment has been completed. Thus, the user need not lift the entire soaking basin to pour out liquid. In addition, the user can use the frame to support the new liner while filling it with liquid, and to transport the filled liner to the base unit to service clients.

公开(公告)号：US20130061871A1

公开(公告)日：2013-03-14

申请号：US13560837

申请日：2012-07-27

Applicant: David Henry Collins ,  Carl Kenneth Elliott

Inventor： David Henry Collins ,  Carl Kenneth Elliott

IPC: B08B7/00 ,  B08B13/00

CPC classification number: B08B7/00 ,  C23C16/4401 ,  C23C16/4408 ,  H01J37/32862

Abstract: During each idle period in which a plasma processing tool is not used in succession, upon lapse of a selected period of inactivity by the plasma production tool of between 10 and 60 minutes, a plasma is generated within the plasma processing tool to heat the vacuum enclosure to an operating temperature reached during production use of the plasma processing tool. A gas-only purge is then performed, and the vacuum enclosure is pumped down to a base vacuum to remove small particles of less than 0.12 microns that may otherwise generate on the interior walls of the vacuum enclosure. Extended operation of the plasma processing tool without failure of particle qualification or reduced availability is achieved.

Abstract translation: 在等离子体处理工具不连续使用的每个空闲时段期间，等离子体生产工具在10至60分钟之间经过选定的不活动周期后，在等离子体处理工具内产生等离子体，以加热真空外壳 达到等离子体处理工具的生产使用期间达到的工作温度。 然后执行只有气体的吹扫，并且将真空外壳泵送到基底真空以除去小于0.12微米的小颗粒，否则可能在真空外壳的内壁上产生。 实现等离子体处理工具的延长操作，而不会造成粒子鉴定或可用性降低。

公开(公告)号：US08361549B2

公开(公告)日：2013-01-29

申请号：US13315366

申请日：2011-12-09

Applicant: Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

Inventor： Dong-Kil Yim ,  John M. White ,  Soo Young Choi ,  Han Byoul Kim ,  Jin Man Ha ,  Beom Soo Park

IPC: C23C16/00 ,  H05H1/24

CPC classification number: C23C16/4401 ,  C23C14/02 ,  C23C14/564 ,  C23C16/0209 ,  H01J2237/2001

Abstract: A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.

Abstract translation: 公开了一种防止处理室内的颗粒污染的方法。 预处理室内的衬底可能引起热泳效应，使得室内未附着于表面的颗粒可能不会停留在衬底上。 增加衬底温度的一种方法是等离子体加载衬底。 等离子体负载包括向衬底提供惰性气体等离子体以加热衬底。 提高衬底温度的另一种方法是加载衬底的高压。 高压负载包括加热衬底，同时将腔室压力提高到约1托和约10托之间。 通过在基板处理之前快速增加处理室内的基板温度，不太可能发生颗粒污染。

公开(公告)号：US20120255492A1

公开(公告)日：2012-10-11

申请号：US13080874

申请日：2011-04-06

Applicant: Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

Inventor： Mien-Win Wu ,  Ding-Guey Tsai ,  Hwei-Lang Chang ,  Deng-Lain Lin ,  Cheng-Chang Hsieh ,  Chi-Fong Ai

IPC: C23C16/513 ,  C23C16/458 ,  C23C16/50 ,  C23C16/453

CPC classification number: C23C16/545 ,  C23C16/0245 ,  C23C16/4401 ,  C23C16/45512 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/513 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32761 ,  H01J37/32825 ,  H01J37/32853

Abstract: An apparatus provides large area atmospheric pressure plasma enhanced chemical vapor deposition without contaminations in its electrode assembly and deposited films. The apparatus consists of a large area vertical planar nitrogen plasma activation electrode assembly and its high voltage power supply, a large area vertical planar nitrogen plasma deposition electrode assembly and its high voltage power supply, a long-line uniform precursor jet apparatus, a roll-to-roll apparatus for substrate movement, and a sub-atmospheric pressure deposition chamber and its pumping apparatus. Not only can the deposited film contaminations in the electrode assembly interior and the debris of the deposited films from exterior of the electrode assembly and the air aerosols in the deposition chamber be completely prevented, but a large area roll-to-roll uniform deposition can also be achieved to meet a roll-to-roll continuous production, so as to achieve improved film quality, increased production throughput and reduced manufacturing cost.

Abstract translation: 一种装置在其电极组件和沉积膜中提供大面积的大气压等离子体增强化学气相沉积而没有污染。 该装置由大面积垂直平面氮等离子体激活电极组件及其高压电源，大面积垂直平面氮等离子体沉积电极组件及其高压电源，长线均匀前驱体喷射装置， 用于基板移动的滚动装置和次大气压力沉积室及其抽吸装置。 不仅可以完全防止电极组件内部的沉积膜污染物和电极组件外部沉积膜的碎屑和沉积室中的空气气溶胶，而且大面积的卷对卷均匀沉积也可以 实现卷对卷连续生产，从而达到提高胶片质量，提高生产量和降低制造成本的目的。

公开(公告)号：US08282334B2

公开(公告)日：2012-10-09

申请号：US12221268

申请日：2008-08-01

Applicant: Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

Inventor： Sven Lindfors ,  Juha A. Kustaa-Adolf Poutiainen

IPC: H01L21/677

CPC classification number: C23C16/45546 ,  C23C16/4401 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/67742 ,  H01L21/67757

Abstract: The invention relates to methods and apparatus in which a plurality of ALD reactors are placed in a pattern in relation to each other, each ALD reactor being configured to receive a batch of substrates for ALD processing, and each ALD reactor comprising a reaction chamber accessible from the top. A plurality of loading sequences is performed with a loading robot. Each loading sequence comprises picking up a substrate holder carrying a batch of substrates in a storage area or shelf, and moving said substrate holder with said batch of substrates into the reaction chamber of the ALD reactor in question.

Abstract translation: 本发明涉及其中多个ALD反应器相对于彼此以图案放置的方法和设备，每个ALD反应器被配置为接收一批用于ALD处理的基底，并且每个ALD反应器包括可从 顶端。 使用装载机器人执行多个加载顺序。 每个加载顺序包括拾取在存储区域或搁板中承载一批基板的基板保持器，以及将所述基板保持器与所述一批基板移动到所讨论的ALD反应器的反应室中。

公开(公告)号：US08278195B2

公开(公告)日：2012-10-02

申请号：US13287597

申请日：2011-11-02

Applicant: Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

Inventor： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC: H01L21/469

CPC classification number: H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

Abstract: In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

Abstract translation: 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。