Abstract:
An electron beam system (such as a scanning electron microscope or an electron probe microanalyzer) capable of displaying backscattered electron (BSE) images at the same brightness and same contrast at all times if the atomic number differences are the same when illumination conditions including accelerating voltage and emission current are varied or when the specimens are imaged with different instruments.
Abstract:
A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
Abstract:
A method prepares a microsample from a volume sample using multiple particle beams. The method includes providing a volume sample in the microscope system, wherein the interior of the volume sample has a sample region of interest, and producing a macrolamella comprising the sample region of interest by removing sample material of the volume sample using one of the particle beams. The method also includes orienting the macrolamella relative to one of the particle beams, and removing sample material of the macrolamella via a beam so that the region of interest is exposed.
Abstract:
An inspection system is provided that includes a microscope that scans a sample with a beam that is an incident electron beam, and an image processing device that controls the microscope. The image processing device performs: an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample a result of controlling the microscope according to a s and irradiating the sample with the beam, the plurality of image acquisition condition being multiple combinations of different irradiation amounts of the beam per unit length; a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.
Abstract:
Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition.
Abstract:
A method for automatically imaging in an electron microscope (SEM, TEM or STEM) features in a region of interest in a lamella without prior knowledge of the features to be imaged, thereby enabling multiple electron microscope images to be obtained by stepping from the first image location without requiring the use of image recognition of individual image features. By eliminating the need for image recognition, substantial increases in image acquisition rates may be obtained.
Abstract:
A method and a system for imaging an object, the system may include electron optics that may be configured to scan a first area of the object with at least one electron beam; wherein the electron optics may include a first electrode; and light optics that may be configured to illuminate at least one target of (a) the first electrode and (b) the object, thereby causing an emission of electrons between the first electrode and the object.
Abstract:
A method is provided for processing and/or observing an object using at least one particle beam that is scanned over the object. A scan region on the object is determined, the scan region having scan lines, and the particle beam is moved in a first scanning direction along one of the scan lines. The first scanning direction is changed to a second scanning direction at a change-of-direction time. Changing from the first scanning direction to the second scanning direction comprises setting of a point of rotation in that scan line of the scan region in which the particle beam is situated at the change-of-direction time, with an axis of rotation extending through the point of rotation. The first scanning direction is changed into the second scanning direction by rotating the scan region about the axis of rotation, with the point of rotation being selected dependent on the direction of rotation.
Abstract:
To provide a stage device and a charged particle beam device using the same capable of effectively suppressing thermal deformation of a stage generated by temperature increase caused by heat generated by a linear motor. The stage device including a table, a linear motor driving the table in a prescribed direction, in which the table and a moving part of the linear motor are connected by components, a slide unit is attached to the component, movement of which is constrained by a rail fixed to a base, and at the same time, the slide unit is positioned vertically below a place where the component is joined to the table, thereby suppressing thermal deformation of the table.
Abstract:
The present invention enables a sample to be observed in a clean state directly after preparation of a final observation surface when preparing a sample for observing a material that is sensitive to heat. The present invention is a method of preparing a sample using a charged particle beam device including a microprobe having a cooling mechanism, a first sample holder having a mechanism for retaining a sample in a cooled state, and a stage into which the microprobe and the first sample holder can be introduced, the method including cutting a bulk-shaped sample piece from the sample on the first sample holder retained in a cooled state; adhering the sample piece to a distal end of the microprobe that is cooled to a fixed temperature and transferring the sample piece to a second sample holder for thin film observation retained in a cooled state, which is different from the first sample holder, within a vacuum chamber of the charged particle beam device; separating the sample piece that has been transferred to the second sample holder from the microprobe and thin film processing the sample piece to a thickness that is less than the thickness during cutting; and observing the sample piece after the thin film processing.