公开(公告)号：US20140299741A1

公开(公告)日：2014-10-09

申请号：US13857484

申请日：2013-04-05

Applicant: NOKIA CORPORATION

Inventor： Alan Colli

IPC: H01L31/0352

CPC classification number: H01L31/035218 ,  H01L31/028 ,  H01L31/1013 ,  H01L31/1016 ,  H01L31/112 ,  H01L31/113 ,  Y02E10/547

Abstract: An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.

Abstract translation: 一种装置包括石墨烯膜; 位于与作为第一单层的石墨烯膜接触的第一类型的量子点的第一布置; 位于与石墨烯膜接触的第二类型的量子点的第二布置作为第二单层; 连接到所述石墨烯膜的端部的输入电压源; 以及连接到量子点的第一布置和量子点的第二布置之间的石墨烯膜的输出电压探针。

公开(公告)号：US20140287237A1

公开(公告)日：2014-09-25

申请号：US14352873

申请日：2012-10-19

Applicant: NEXDOT

Inventor： Benoit Mahler

IPC: B82B3/00 ,  B82B1/00 ,  B05D1/00

CPC classification number: H01L31/035218 ,  B01J27/04 ,  B01J27/0573 ,  B01J27/0576 ,  B01J35/0013 ,  B01J35/023 ,  B01J35/06 ,  B05D1/00 ,  B82B1/005 ,  B82B3/0033 ,  B82Y15/00 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/127 ,  Y10T428/2991 ,  Y10T428/2993

Abstract: A process of growth in the thickness of at least one facet of a colloidal inorganic sheet. By sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described.

Abstract translation: 胶态无机片材的至少一个面的厚度生长过程。 片材是指具有至少一个尺寸，厚度，纳米尺寸和横向尺寸的结构，其厚度通常大于厚度的5倍。 均质化是指厚度均匀组成的材料，异质结构是指厚度不均匀的材料。 该方法允许在至少一种无机胶体片上沉积至少一个单层原子，该单层由包含或不在片中的那些类型的原子构成。 还描述了由这种方法产生的均质和异质结构材料以及材料的应用。

公开(公告)号：US20140273413A1

公开(公告)日：2014-09-18

申请号：US13950175

申请日：2013-07-24

Applicant: Solan, LLC

Inventor： Mark Alan Davis

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  B82Y40/00 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/41 ,  H01L29/43 ,  H01L29/66431 ,  H01L29/7781 ,  H01L29/7789 ,  H01L31/028 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035236 ,  H01Q21/00 ,  Y02E10/547 ,  Y10S977/734 ,  Y10S977/842 ,  Y10T428/24521

Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

公开(公告)号：US20140224308A1

公开(公告)日：2014-08-14

申请号：US14130049

申请日：2012-06-28

Applicant: Martin Buskuhl

Inventor： Martin Buskuhl

IPC: H01L31/0352

CPC classification number: H01L31/035218 ,  H01L31/0322 ,  H01L31/035281 ,  H01L31/0384 ,  H01L31/03845 ,  Y02E10/52 ,  Y02E10/541

Abstract: Nanoparticle for a solar power system for increasing light utilisation, with a core selected from materials comprising metals, metal alloys, semi-conductors, electrically conductive non-metals, electrically conductive compounds and mixtures thereof, whereby at least one first shell is arranged around the core.

Abstract translation: 用于增加光利用率的太阳能发电系统的纳米颗粒，其中选择的材料包括金属，金属合金，半导体，导电非金属，导电化合物及其混合物，由此至少一个第一壳体围绕 核心。

公开(公告)号：US20140217365A1

公开(公告)日：2014-08-07

申请号：US13407094

申请日：2012-02-28

Applicant: FRANKY SO ,  DO YOUNG KIM ,  BHABENDRA K. PRADHAN

Inventor： FRANKY SO ,  DO YOUNG KIM ,  BHABENDRA K. PRADHAN

IPC: H01L51/46 ,  H01L51/54

CPC classification number: H01L27/3234 ,  G02B23/12 ,  H01L27/288 ,  H01L27/305 ,  H01L27/3227 ,  H01L31/02322 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/101 ,  H01L51/0053 ,  H01L51/4246 ,  H01L51/4293 ,  H01L2251/308 ,  Y02E10/549

Abstract: Embodiments of the invention are directed to IR photodetectors with gain resulting from the positioning of a charge multiplication layer (CML) between the cathode and the IR sensitizing layer of the photodetector, where accumulating charge at the CML reduces the energy difference between the cathode and the CML to promote injection of electrons that result in gain for an electron only device. Other embodiments of the invention are directed to inclusion of the IR photodetectors with gain into an IR-to-visible up-conversion device that can be used in night vision and other applications.

Abstract translation: 本发明的实施例涉及具有由光电检测器的阴极和IR感光层之间的电荷倍增层（CML）的定位产生的增益的红外光电检测器，其中在CML处累积电荷降低了阴极和 CML促进注入电子，导致仅电子器件的增益。 本发明的其它实施例涉及将红外光电检测器的增益包括在可用于夜视和其他应用的IR到可见的上转换装置中。

公开(公告)号：US20140182666A1

公开(公告)日：2014-07-03

申请号：US13940873

申请日：2013-07-12

Applicant: Bureau of Energy, Ministry of Economic Affairs

Inventor： Hsisheng Teng ,  Cheng-Yu Lin ,  Tzung-Luen Li ,  Chiao-Yi Teng

IPC: H01G9/20 ,  H01L31/0352

CPC classification number: H01L31/035218 ,  B82Y30/00 ,  B82Y40/00 ,  H01G9/2013 ,  H01G9/2031 ,  H01G9/2054 ,  H01G9/2072 ,  Y02E10/542 ,  Y02P70/521 ,  Y10S977/774 ,  Y10S977/948

Abstract: Quantum dot-sensitized solar cell and manufacturing method thereof are provided. The proposed quantum dot-sensitized solar cell has a counter electrode with a PbS thin-film layer and a polysulfide electrolyte contacting the PbS thin-film layer.

Abstract translation: 提供量子点敏化太阳能电池及其制造方法。 所提出的量子点敏化太阳能电池具有与PbS薄膜层和多硫化物电解质接触PbS薄膜层的对电极。

公开(公告)号：US20140166090A1

公开(公告)日：2014-06-19

申请号：US14187635

申请日：2014-02-24

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Koji Murayama ,  Masanobu Nomura ,  Yasushi Iwata ,  Kanako Tomita

IPC: H01L31/0352

CPC classification number: H01L31/035236 ,  H01L31/022425 ,  H01L31/035218 ,  H01L31/06 ,  Y02E10/50

Abstract: A solar cell that includes a negative electrode made of Al—Nd or the like formed on a substrate, an electron transport layer made of n-type Si or the like, a quantum dot arrangement layer made of graphene or the like, a quantum dot layer, a positive hole transport layer made of p-type Si or the like, and a positive electrode made of ITO or the like are sequentially formed on a surface of the negative electrode. Output electrodes are formed on the positive electrode so that at least a part of the surface of the positive electrode is exposed. The quantum dot layer is constructed such that quantum dots of Si cluster particles are three-dimensionally periodically arranged. The Si cluster particles have an average particle size of 3 nm or less, and the interparticle distance between the Si cluster particles is 1 nm or less.

Abstract translation: 一种太阳能电池，其包括由形成在基板上的Al-Nd等构成的负极，由n型Si等构成的电子传输层，由石墨烯等构成的量子点排列层，量子点 由p型Si等构成的空穴传输层和由ITO等构成的正极依次形成在负极的表面上。 在正极上形成输出电极，使正极的表面的至少一部分露出。 构造量子点层，使得Si簇粒子的量子点三维地周期性排列。 Si簇粒子的平均粒径为3nm以下，Si簇粒子间的粒子间距离为1nm以下。

公开(公告)号：US08724366B2

公开(公告)日：2014-05-13

申请号：US13848449

申请日：2013-03-21

Applicant: Edward Hartley Sargent ,  Jason Paul Clifford ,  Gerasimos Konstantatos ,  Ian Howard ,  Ethan J. D. Klem ,  Larissa Levina

Inventor： Edward Hartley Sargent ,  Jason Paul Clifford ,  Gerasimos Konstantatos ,  Ian Howard ,  Ethan J. D. Klem ,  Larissa Levina

IPC: G11C11/00

CPC classification number: H01L27/305 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02521 ,  H01L21/02601 ,  H01L21/02628 ,  H01L27/1462 ,  H01L27/14634 ,  H01L27/14665 ,  H01L27/14692 ,  H01L27/308 ,  H01L31/02162 ,  H01L31/022466 ,  H01L31/0352 ,  H01L31/035218 ,  H01L31/03926 ,  H01L51/0038 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/4253 ,  H01L51/426 ,  H01L2031/0344 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/893 ,  Y10S977/954 ,  Y10S977/962

Abstract: Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

Abstract translation: 各种实施例包括光学和光电器件及其制造方法。 在一个方面，一种光学器件包括具有导电区域阵列的集成电路和在该集成电路的至少一部分上的光敏材料，并与导电区域阵列的至少一个导电区域电连通。 在另一方面，膜包括融合的纳米晶体的网络，所述纳米晶体具有核心和外表面，其中所述融合的纳米晶体的至少一部分的核心与所述核心的至少一个物理接触直接物理接触和电连通 相邻的熔融纳米晶体，并且其中所述膜在纳米晶体的芯熔合的区域中基本上没有缺陷状态。 描述了附加的设备和方法。

公开(公告)号：US20140116502A1

公开(公告)日：2014-05-01

申请号：US14125835

申请日：2012-06-13

Applicant: Seiji Samukawa

Inventor： Seiji Samukawa

IPC: H01L29/66 ,  H01L31/0352 ,  H01S5/343

CPC classification number: H01L29/66977 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/32139 ,  H01L29/127 ,  H01L29/66 ,  H01L31/035218 ,  H01L31/076 ,  H01L31/078 ,  H01L51/0093 ,  H01S5/3412 ,  H01S5/343 ,  H01S2304/00 ,  Y02E10/548

Abstract: A quantum nanodot 3 is formed of a semiconductor and has an outer diameter in two-dimensional directions which is not more than twice a bore radius of an exciton in the semiconductor. A two-dimensional quantum nanodot array 1 has a structure that the quantum nanodots 3 are two-dimensionally and uniformly arranged with a spacing between the quantum nanodots 3 being 1 nm or more. The two-dimensional nanodot array 1 may include an intermediate layer 6 which is made of a semiconductor or an insulator and is filled between the quantum nanodot arrays 10. Since the quantum nanodots have high orientation and high density, a high quantum confinement effect is attained. Therefore, the quantum nanodot 3 made of Si produces direct transition type luminescence. It is possible to control an optical property and a transport property of the two-dimensional quantum nanodot array 10.

Abstract translation: 量子纳米点3由半导体形成，其二维方向的外径不超过半导体激子的孔半径的两倍。 二维量子纳米点阵列1具有量子纳米点3二维且均匀排列的结构，量子纳米点3之间的间隔为1nm以上。 二维纳米点阵列1可以包括由半导体或绝缘体制成并填充在量子纳米点阵列10之间的中间层6.由于量子纳米点具有高取向和高密度，因此获得高量子限制效应 。 因此，由Si制成的量子纳米点3产生直接转变型发光。 可以控制二维量子纳米点阵列10的光学特性和传输性质。

公开(公告)号：US20140093654A1

公开(公告)日：2014-04-03

申请号：US13915468

申请日：2013-06-11

Applicant: Honda Patents & Technologies North America, LLC ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： Timothy P. Holme ,  Andrei Iancu ,  Hee Joon Jung ,  Michael C. Langston ,  Munekazu Motoyama ,  Friedrich B. Prinz ,  Takane Usui ,  Hitoshi Iwadate ,  Neil Dasgupta ,  Cheng-Chieh Chao

IPC: C23C16/48

CPC classification number: C23C16/482 ,  B82Y10/00 ,  B82Y20/00 ,  C23C16/48 ,  C23C16/483 ,  C23C16/486 ,  C23C16/487 ,  H01L21/02532 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/0262 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035236 ,  H01L31/18 ,  Y10S977/762 ,  Y10S977/773 ,  Y10S977/774

Abstract: A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Abstract translation: 提供了一种制造量子限制的方法。 该方法包括使用沉积设备沉积衬底上的材料层，其中沉积包括在循环之前，循环期间和/或在沉积循环之后照射该层，以改变在该沉积中的量子限制的成核 材料层以控制量子限制的尺寸和/或形状。 量子限制可以包括量子阱，纳米线或量子点。 相对于沉积设备，照射可以就地或离位。 照射可以包括光子，电子或离子的照射。 沉积可以包括原子层沉积，化学气相沉积，MOCVD，分子束外延，蒸发，溅射或脉冲激光沉积。