公开(公告)号：US20240158941A1

公开(公告)日：2024-05-16

申请号：US18418429

申请日：2024-01-22

申请人： MacDermid Enthone Inc.

发明人： Roger Bernards ,  Emely Abel-Tatis

IPC分类号： C25D3/48 ,  H05K3/18 ,  H05K3/46

CPC分类号： C25D3/48 ,  H05K3/181 ,  H05K3/4661

摘要： An autocatalytic gold bath capable of depositing gold from solution onto a substrate, wherein the substrate has one or more metal layers thereon. The autocatalytic gold bath includes (a) a chelator; (b) a gold salt; and (c) a reducing agent, wherein the reducing agent comprises an organic molecule having more than one carbon atom on the organic molecule. A process of plating gold onto the surface of the one or more metal layers on the substrate is also included. The gold plating bath can be used to deposit a final finish to the surface of the one or more metal layers which can be formed in an ENIG, ENEPIG, EPAG, direct gold over copper or gold over silver process.

公开(公告)号：US20240018678A1

公开(公告)日：2024-01-18

申请号：US18372236

申请日：2023-09-25

申请人： MacDermid Enthone Inc.

发明人： Vincent Paneccasio, JR. ,  Kyle Whitten ,  Richard Hurtubise ,  John Commander ,  Eric Rouya

IPC分类号： C25D3/38 ,  C25D7/12 ,  C25D17/00

CPC分类号： C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885

摘要： An electrolytic plating composition for superfilling submicron features in a semiconductor integrated circuit device and a method of using the same. The composition comprises (a) a source of copper ions to electrolytically deposit copper onto the substrate and into the electrical interconnect features, and (b) a suppressor comprising at least three amine sites, said polyether comprising a block copolymer substituent comprising propylene oxide (PO) repeat units and ethylene oxide (EO) repeat units, wherein the number average molecular weight of the suppressor compound is between about 1,000 and about 20,000.

公开(公告)号：US11846018B2

公开(公告)日：2023-12-19

申请号：US17665871

申请日：2022-02-07

申请人： MacDermid Enthone Inc.

发明人： Richard W. Hurtubise ,  Eric Yakobson ,  Shaopeng Sun ,  Taylor L. Wilkins ,  Elie H. Najjar ,  Wenbo Shao

IPC分类号： C23C14/02 ,  C23C16/02 ,  C25D3/00 ,  C23C16/40 ,  C23C14/08

CPC分类号： C23C16/403 ,  C23C14/02 ,  C23C14/081 ,  C23C16/02 ,  C25D3/00

摘要： A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.

公开(公告)号：US11697884B2

公开(公告)日：2023-07-11

申请号：US17400633

申请日：2021-08-12

申请人： MacDermid Enthone Inc.

发明人： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC分类号： C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00 ,  C25D7/12

CPC分类号： C25D3/38 ,  C08G65/24 ,  C08G65/33317 ,  C08G73/0627 ,  H01L24/11 ,  C25D7/123 ,  H01L2224/11462 ,  H01L2924/01029 ,  H01L2924/3656

摘要： An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：USRE49202E1

公开(公告)日：2022-09-06

申请号：US16030344

申请日：2018-07-09

申请人： MacDermid Enthone Inc.

发明人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

IPC分类号： H01L21/4763 ,  H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/768

摘要： An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

公开(公告)号：US20210332491A1

公开(公告)日：2021-10-28

申请号：US17222058

申请日：2021-04-05

申请人： MacDermid Enthone Inc.

发明人： John Commander ,  Kyle Whitten ,  Vincent Paneccasio, JR. ,  Shaopeng Sun ,  Eric Yakobson ,  Jianwen Han ,  Elie Najjar

IPC分类号： C25D3/16 ,  H01L21/768 ,  C25D5/02 ,  C25D7/12 ,  H01L21/288 ,  C25D3/18 ,  C25D7/00

摘要： Compositions and methods of using such compositions for electroplating cobalt onto semiconductor base structures comprising submicron-sized electrical interconnect features are provided herein. The interconnect features are metallized by contacting the semiconductor base structure with an electrolytic composition comprising a source of cobalt ions, a suppressor, a buffer, and one or more of a depolarizing compound and a uniformity enhancer. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The method presented herein is useful for superfilling interconnect features.

公开(公告)号：US11124888B2

公开(公告)日：2021-09-21

申请号：US16334098

申请日：2017-09-20

申请人： MacDermid Enthone Inc.

发明人： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC分类号： C25D3/38 ,  C25D7/12 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

摘要： An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US10986738B2

公开(公告)日：2021-04-20

申请号：US15973814

申请日：2018-05-08

申请人： MacDermid Enthone Inc.

发明人： Roger Bernards ,  James Martin ,  Jason J. Carver

IPC分类号： C25D5/54 ,  C25D5/56 ,  C23C28/00 ,  H05K3/42 ,  H05K3/00 ,  H05K3/38

摘要： A method of preparing a non-conductive substrate to allow metal plating thereon. The method includes the steps of a) contacting the non-conductive substrate with a conditioner comprising a conditioning agent; b) applying a carbon-based dispersion to the conditioned substrate, wherein the carbon-based dispersion comprises carbon or graphite particles dispersed in a liquid solution; and c) etching the non-conductive substrate. The etching step is performed before the liquid carbon-based dispersion dries on the non-conductive substrate.

公开(公告)号：US10103029B2

公开(公告)日：2018-10-16

申请号：US15148738

申请日：2016-05-06

申请人： MacDermid Enthone Inc.

发明人： Thomas B. Richardson ,  Joseph A. Abys ,  Wenbo Shao ,  Chen Wang ,  Vincent Paneccasio ,  Cai Wang ,  Sean Xuan Lin ,  Theodore Antonellis

IPC分类号： H01L21/28 ,  H01L21/288 ,  C25D3/38 ,  C25D5/18 ,  H01L21/768 ,  C25D7/12 ,  C25D5/02

摘要： A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

公开(公告)号：US10081876B2

公开(公告)日：2018-09-25

申请号：US14916706

申请日：2014-09-05

申请人： MacDermid Enthone Inc.

发明人： Helmut Horsthemke

IPC分类号： C23C18/16 ,  C23C18/31 ,  C23C18/34 ,  C23C18/36 ,  C23C18/40 ,  C23C18/44 ,  C23C18/52 ,  C25D3/02 ,  C25D3/10 ,  C25D3/12 ,  C25D3/20 ,  C25D3/22 ,  C25D3/26 ,  C25D3/32 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  C25D3/52 ,  C25D3/54 ,  C25D21/12 ,  C07C317/04

CPC分类号： C25D3/10 ,  C07C317/04 ,  C23C18/1675 ,  C23C18/31 ,  C23C18/36 ,  C25D3/02 ,  C25D21/12

摘要： An aqueous electrolyte for the deposition of a metal layer on a substrate surface as well as a method for the deposition of a metal layer on a substrate surface by which electrolyte and in which method the formation of airborne emissions above the surface of the electrolyte in a plating tank is significantly reduced or more preferably omitted. The aqueous electrolyte composition according to the invention comprises at least one surfactant in a concentration affecting a dynamic surface tension of the composition of ≤35 mN/m.