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公开(公告)号：US11894227B2
公开(公告)日：2024-02-06
申请号：US17586505
申请日：2022-01-27
发明人： Bhadri N. Varadarajan , Bo Gong , Zhe Gui
IPC分类号： H01L21/02 , C23C16/505 , C23C16/511 , C23C16/32 , C23C16/452 , H01L29/49 , H01L21/768 , C23C16/04
CPC分类号： H01L21/02167 , C23C16/045 , C23C16/325 , C23C16/452 , C23C16/505 , C23C16/511 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/02274 , H01L21/76831 , H01L21/76834 , H01L29/4983 , H01L29/4991 , H01L21/7682 , H01L2221/1047
摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.
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公开(公告)号：US11725282B2
公开(公告)日：2023-08-15
申请号：US17445562
申请日：2021-08-20
发明人： Chunguang Xia , Ramesh Chandrasekharan , Douglas Keil , Edward J. Augustyniak , Karl Frederick Leeser
IPC分类号： C23C16/455 , C23C16/44 , C23C16/509 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4558 , C23C16/45502 , C23C16/45508 , C23C16/45519 , C23C16/45525 , C23C16/45591 , C23C16/5096 , H01J37/3244
摘要： A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.
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公开(公告)号：US20230076493A1
公开(公告)日：2023-03-09
申请号：US18050029
申请日：2022-10-26
摘要： Disclosed are cup assemblies for holding, sealing, and providing electrical power to a semiconductor substrate during electroplating which may include a cup bottom element having a main body portion and a moment arm, an elastomeric sealing element disposed on the moment arm, and an electrical contact element disposed on the elastomeric sealing element. The main body portion may be such that it does not substantially flex when a substrate is pressed against the moment arm, and it may be rigidly affixed to another feature of the cup structure. The ratio of the average vertical thickness of the main body portion to that of the moment arm may be greater than about 5. The electrical contact element may have a substantially flat but flexible contact portion disposed upon a substantially horizontal portion of the sealing element. The elastomeric sealing element may be integrated with the cup bottom element during manufacturing.
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公开(公告)号：US20220220610A1
公开(公告)日：2022-07-14
申请号：US17704582
申请日：2022-03-25
IPC分类号： C23C16/32 , C23C16/452 , C23C16/505 , H01L21/02 , C23C16/50 , C23C16/52
摘要： Provided are methods and systems for providing silicon-containing films. The composition of the silicon-containing film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.
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公开(公告)号：US20220148875A1
公开(公告)日：2022-05-12
申请号：US17586505
申请日：2022-01-27
发明人： Bhadri N. VARADARAJAN , Bo GONG , Zhe GUI
IPC分类号： H01L21/02 , C23C16/505 , C23C16/511 , C23C16/32 , C23C16/452 , H01L29/49 , H01L21/768 , C23C16/04
摘要： Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source.
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公开(公告)号：US20220098727A1
公开(公告)日：2022-03-31
申请号：US17644051
申请日：2021-12-13
IPC分类号： C23C16/32 , C23C16/452 , C23C16/505 , H01L21/02 , C23C16/50 , C23C16/52
摘要： Provided are methods and systems for providing silicon-containing films. The composition of the silicon carbide film can be controlled by the choice of the combination of precursors and the ratio of flow rates between the precursors. The silicon-containing films can be deposited on a substrate by flowing two different organo-silicon precursors to mix together in a reaction chamber. The organo-silicon precursors react with one or more radicals in a substantially low energy state to form the silicon-containing film. The one or more radicals can be formed in a remote plasma source.
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7.发明授权公开(公告)号：US10968531B2
公开(公告)日：2021-04-06
申请号：US15416448
申请日：2017-01-26
IPC分类号： C25D21/12 , C25D5/00 , C25D17/00 , H01L21/288 , C25D7/12 , C25D17/06 , G03F7/16 , G03F7/20 , H01L21/02 , H01L21/027 , H01L21/768 , H01L23/522 , H01L23/532
摘要： Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.
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公开(公告)号：US10920335B2
公开(公告)日：2021-02-16
申请号：US16007800
申请日：2018-06-13
IPC分类号： C25D17/00 , C25D5/18 , C25D17/12 , C25D21/10 , C25D21/12 , C25D5/04 , C25D5/00 , C25D17/06 , C25D7/12 , H01L21/288 , H01L21/768
摘要： Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.
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公开(公告)号：US10351968B2
公开(公告)日：2019-07-16
申请号：US15093435
申请日：2016-04-07
摘要： Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved. The consumable anode in one implementation has a plurality of through channels and at least one depression on its surface (e.g., a depression surrounding a channel) that is configured for registering with a protrusion on a component of an anode assembly, such as with a support plate. Fasteners may pass through the channels in the anode and attach it to a charge plate.
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公开(公告)号：US10316409B2
公开(公告)日：2019-06-11
申请号：US13842054
申请日：2013-03-15
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/455
摘要： A radical source for supplying radicals during atomic layer deposition semiconductor processing operations is provided. The radical source may include a remote volume, a baffle volume, and a baffle that partitions the remote volume from the baffle volume. The baffle volume and the remote volume may be fluidly connected through the baffle via a plurality of baffle holes. The baffle may be offset from a faceplate with a plurality of first gas distribution holes fluidly connected with the baffle volume. A baffle gas inlet may be fluidly connected with the baffle volume, and a first process gas inlet may be fluidly connected with the remote volume. Baffle gas may be flowed into the baffle volume to prevent radicalized first process gas in the remote volume from flowing through the baffle volume and the faceplate.
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