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24 条记录 (耗时 0.016 秒)

    Method of forming a high-k film on a semiconductor device
    1.
    发明授权
    Method of forming a high-k film on a semiconductor device 有权
    在半导体器件上形成高k膜的方法

    公开(公告)号：US07192835B2

    公开(公告)日：2007-03-20

    申请号：US10854306

    申请日：2004-05-27

    申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/302 ,  H01L21/336

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

    摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

    摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

    Semiconductor wafer surface and method of treating a semiconductor wafer surface
    6.
    发明授权
    Semiconductor wafer surface and method of treating a semiconductor wafer surface 有权
    半导体晶片表面和处理半导体晶片表面的方法

    公开(公告)号：US06897150B1

    公开(公告)日：2005-05-24

    申请号：US09715000

    申请日：2000-11-20

    申请人： Hidemitsu Aoki ,  Hiroaki Tomimori

    发明人： Hidemitsu Aoki ,  Hiroaki Tomimori

    IPC分类号： H01L21/3205 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

    CPC分类号： H01L21/02074 ,  H01L21/76834 ,  H01L21/76883

    摘要： The present invention provides a method of treating a surface of a semiconductor substrate, the surface of the semiconductor substrate including at least any one of a copper region, a copper based region and a copper alloy region, the method comprises the steps of: carrying out an anti-corrosion treatment by exposing the surface of the semiconductor substrate to a solution containing an anti-corrosive agent; and forming a copper-diffusion stopper insulating film over the surface of the semiconductor substrate.

    摘要翻译： 本发明提供一种处理半导体衬底的表面的方法，所述半导体衬底的表面包括铜区域，铜基区域和铜合金区域中的至少一个，所述方法包括以下步骤：执行 通过将半导体衬底的表面暴露于含有抗腐蚀剂的溶液的防腐蚀处理; 以及在所述半导体衬底的表面上形成铜扩散阻挡绝缘膜。

    Cleaning water for cleaning a wafer and method of cleaning a wafer
    8.
    发明授权
    Cleaning water for cleaning a wafer and method of cleaning a wafer 失效
    用于清洁晶片的清洁水和清洁晶片的方法

    公开(公告)号：US06797648B2

    公开(公告)日：2004-09-28

    申请号：US10167442

    申请日：2002-06-13

    申请人： Hidemitsu Aoki ,  Hiroaki Tomimori

    发明人： Hidemitsu Aoki ,  Hiroaki Tomimori

    IPC分类号： H01L2131

    CPC分类号： H01L21/02074 ,  B08B3/04 ,  C02F2103/346 ,  G03F7/422 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02071 ,  H01L21/0209 ,  H01L21/31133

    摘要： A wafer is rotated while cleaning water is sprayed from a nozzle to the surface of this wafer. The cleaning water is an aqueous solution in which 1 to 2.5 ppm of hydrogen gas is dissolved in water with an additional, small amount of ammonium hydroxide. The cleaning water has a pH of 7.5 to 8.0, an oxidation-reduction potential of −0.6 to −0.45 V, and a resistivity of not greater than 1 M&OHgr;·cm. And the cleaning water is reducing water.

    摘要翻译： 旋转晶片，同时清洁水从喷嘴喷射到该晶片的表面。 清洗水是其中1〜2.5ppm氢气与另外少量氢氧化铵溶解在水中的水溶液。 清洗水的pH值为7.5〜8.0，氧化还原电位为-0.6〜-0.45V，电阻率为1Moga.cm以下。 清洁水正在减少水分。