公开(公告)号：US09028657B2

公开(公告)日：2015-05-12

申请号：US12879484

申请日：2010-09-10

Applicant: Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25B9/02 ,  C25D17/00 ,  C25D17/10 ,  C25D7/12 ,  C25D17/06

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。

公开(公告)号：US08415261B1

公开(公告)日：2013-04-09

申请号：US13270809

申请日：2011-10-11

Applicant: Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

Inventor： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC: H01L21/00 ,  B01J19/12

CPC classification number: H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

Abstract: Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

公开(公告)号：US08257781B1

公开(公告)日：2012-09-04

申请号：US11201709

申请日：2005-08-11

Applicant: Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

Inventor： Eric G. Webb ,  Steven T. Mayer ,  David Mark Dinneen ,  Edmund B. Minshall ,  Christopher M. Bartlett ,  R. Marshall Stowell ,  Mark T. Winslow ,  Avishai Kepten ,  Jingbin Feng ,  Norman D. Kaplan ,  Richard K. Lyons ,  John B. Alexy

IPC: C23C14/00

CPC classification number: C23C18/1617 ,  C23C18/1632 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76841

Abstract: A main reservoir holds cool reactant liquid. A reaction vessel for treating a substrate is connected to the main reservoir by a feed conduit. A heater is configured to heat reactant liquid in the feed conduit before the liquid enters the reaction vessel. Preferably, the heater is a microwave heater. A recycle conduit connects the reaction vessel with the main reservoir. Preferably, a recycle cooler cools reactant liquid in the recycle conduit before the liquid returns to the main reservoir. Preferably, an accumulation vessel is integrated in the feed conduit for accumulating, heating, conditioning and monitoring reactant liquid before it enters the reaction vessel. Preferably, a recycle accumulator vessel is integrated in the recycle conduit to accommodate reactant liquid as it empties out of the reaction vessel.

Abstract translation: 主要储存器容纳冷反应液体。 用于处理基板的反应容器通过进料导管连接到主容器。 加热器构造成在液体进入反应容器之前加热进料管道中的反应物液体。 优选地，加热器是微波加热器。 回收管道将反应容器与主储存器连接。 优选地，再循环冷却器在液体返回到主储存器之前冷却循环管道中的反应物液体。 优选地，积聚容器集成在进料管道中，用于在反应液进入反应容器之前积聚，加热，调节和监测反应液体。 优选地，再循环蓄能器容器集成在再循环管道中，以便当反应物液体从反应容器中排出时容纳反应液体。

公开(公告)号：US20090280649A1

公开(公告)日：2009-11-12

申请号：US11890790

申请日：2007-08-06

Applicant: Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

Inventor： Steven T. Mayer ,  Mark L. Rea ,  Richard S. Hill ,  Avishai Kepten ,  R. Marshall Stowell ,  Eric G. Webb

IPC: H01L21/44 ,  C25D17/00 ,  H01L21/306

CPC classification number: C25D17/14 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/08 ,  C25D5/34 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25F3/16 ,  C25F3/30 ,  H01L21/02068 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76877

Abstract: Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

公开(公告)号：US07229339B2

公开(公告)日：2007-06-12

申请号：US10884371

申请日：2004-07-02

Applicant: John F. Stumpf ,  Franklin D. Root ,  Brian Severson ,  David Marquardt ,  John Derwood Herb ,  James Jed Crawford ,  Rand Conner ,  Jasent Montano ,  Kevin Bertsch ,  Robert Marshall Stowell ,  Edmund Minshall ,  Timothy Cleary

Inventor： John F. Stumpf ,  Franklin D. Root ,  Brian Severson ,  David Marquardt ,  John Derwood Herb ,  James Jed Crawford ,  Rand Conner ,  Jasent Montano ,  Kevin Bertsch ,  Robert Marshall Stowell ,  Edmund Minshall ,  Timothy Cleary

IPC: B24B5/00

CPC classification number: B24B37/345

Abstract: Methods and apparatus are provided for the chemical mechanical planarization (CMP) of a surface of a work piece. In accordance with one embodiment of the invention the apparatus comprises a plurality of CMP systems, a plurality of load cups for loading unprocessed work pieces into and unloading processed work pieces from the plurality of CMP systems, a plurality of cleaning stations for cleaning processed work pieces unloaded from the CMP systems, and a single robot configured to transfer unprocessed work pieces to the plurality of load cups and to transfer processed work pieces from the load cups to the plurality of cleaning stations.

Abstract translation: 提供了用于工件表面的化学机械平坦化（CMP）的方法和装置。 根据本发明的一个实施例，该装置包括多个CMP系统，用于将未处理的工件装载到多个CMP系统中并从其卸载加工的工件的多个装载杯;多个用于清洁加工件的清洁站 从CMP系统卸载的单个机器人和被配置为将未处理的工件传送到多个装载杯并将加工的工件从加载杯传送到多个清洁站的单个机器人。

公开(公告)号：US06800187B1

公开(公告)日：2004-10-05

申请号：US09927741

申请日：2001-08-10

Applicant: Jonathan D. Reid ,  Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Jeff A. Hawkins

Inventor： Jonathan D. Reid ,  Steven T. Mayer ,  R. Marshall Stowell ,  Evan E. Patton ,  Jeff A. Hawkins

IPC: C25D500

CPC classification number: H01L21/2885 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1669 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/004 ,  C25D17/008

Abstract: An apparatus for engaging a work piece during plating facilitates electrolyte flow during a plating operation. The apparatus helps to control the plating solution fluid dynamics and electric field shape to keep the wafer's local plating environment uniform and bubble free. The apparatus holding the work piece in a manner that facilitates electrolyte circulation patterns in which the electrolyte flows from the center of the work piece plating surface, outward toward the edge of the edge of the work piece. The apparatus holds the work piece near the work piece edges and provides a flow path for electrolyte to flow outward away from the edges of the work piece plating surface. That flow path has a “snorkel” shape in which the outlet is higher than the inlet. In addition, the flow path may have a slot shape that spans much or all of the circumference of holding apparatus. It may be made from a material that resists deformation and corrosion such as certain ceramics.

Abstract translation: 在电镀期间接合工件的装置有助于在电镀操作期间的电解液流动。 该设备有助于控制电镀溶液流体动力学和电场形状，以保持晶片的局部电镀环境均匀且无气泡。 该装置以便于电解质循环图案的方式保持工件，其中电解质从工件电镀表面的中心向外朝向工件边缘的边缘流动。 该装置将工件保持在工件边缘附近，并且提供了电解液从工件电镀表面的边缘向外流动的流动路径。 该流路具有“浮潜”形状，其中出口高于入口。 此外，流路可以具有跨越保持装置的大部分或全部圆周的槽形状。 它可以由抵抗诸如某些陶瓷的变形和腐蚀的材料制成。

公开(公告)号：US5773824A

公开(公告)日：1998-06-30

申请号：US841538

申请日：1997-04-23

Applicant: Edwin Flecha ,  Martin Allen Klos ,  Kenneth G. Roessler ,  Robert Marshall Stowell

Inventor： Edwin Flecha ,  Martin Allen Klos ,  Kenneth G. Roessler ,  Robert Marshall Stowell

IPC: G01B21/30 ,  G01N37/00 ,  G01Q10/06 ,  G01Q30/06 ,  H01J37/28

CPC classification number: G01Q10/065 ,  Y10S977/851

Abstract: A scanning probe microscope includes probe moved into and out of engagement with a sample surface by a combination of deflections occurring within a fast actuator, having a relatively small range of motion, and a slow actuator, having a relatively large range of motion. When the deflection of the fast actuator is moved outside a predetermined range, in which such deflection is a linear function of applied voltage, the slow actuator is operated so that subsequent operation of the fast actuator can return the fast actuator to its predetermined range, Furthermore, when it is necessary to operate the slow actuator in this way, a scanning motion moving the sample surface past the probe is stopped until the probe is brought into a correct level of engagement with the sample surface, with the fast actuator deflected within the predetermined range.

Abstract translation: 扫描探针显微镜包括通过在具有相对较小的运动范围的快速致动器内发生的偏转的组合以及具有相对较大的运动范围的慢速致动器的组合而移动进入和离开与样品表面接合的探针。 当快速致动器的偏转移动到预定范围之外，其中这种偏转是施加电压的线性函数时，慢速致动器被操作，使得快速致动器的后续操作可使快速致动器返回到其预定范围。 当需要以这种方式操作慢速致动器时，停止将样品表面移动通过探针的扫描运动，直到探针与样品表面达到正确的接合水平，而快速致动器在预定的范围内偏转 范围。

公开(公告)号：US06815349B1

公开(公告)日：2004-11-09

申请号：US10274837

申请日：2002-10-18

Applicant: Edmund B. Minshall ,  Kevin Biggs ,  R. Marshall Stowell ,  Wayne Fetters

Inventor： Edmund B. Minshall ,  Kevin Biggs ,  R. Marshall Stowell ,  Wayne Fetters

IPC: H01L2144

CPC classification number: H01L21/76843 ,  C23C18/1617 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/1676 ,  C23C18/168 ,  C23C18/1692 ,  C23C18/40 ,  H01L21/288 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  Y10S977/89

Abstract: An apparatus for holding work pieces during electroless plating has certain improved features designed for use at relatively high temperatures (e.g., at least about 50 degrees C.). Cup and cone components of a “clamshell” apparatus that engage a work piece are made from dimensionally stable materials with relatively low coefficients of thermal expansion. Further, O-rings are removed from positions that come in contact with the work piece. This avoids the difficulty caused by O-rings sticking to work piece surfaces during high temperature processing. In place of the O-ring, a cantilever member is provided on the portion of the cone that contacts the work piece. Still further, the apparatus makes use of a heat transfer system for controlling the temperature of the work piece backside during plating.

Abstract translation: 用于在无电镀期间保持工件的装置具有设计用于在较高温度（例如，至少约50℃）下使用的某些改进的特征。 接合工件的“蛤壳式”装置的杯形和锥形部件由具有相对低的热膨胀系数的尺寸稳定的材料制成。 此外，O形环从与工件接触的位置移除。 这避免了在高温加工过程中O形圈粘在工件表面上造成的困难。 代替O形环，悬臂构件设置在与工件接触的锥体部分上。 此外，该装置利用传热系统来控制电镀期间工件背面的温度。

公开(公告)号：US20120061246A1

公开(公告)日：2012-03-15

申请号：US12879484

申请日：2010-09-10

Applicant: Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

Inventor： Jingbin Feng ,  R. Marshall Stowell ,  Shantinath Ghongadi ,  Zhian He ,  Frederick Dean Wilmot

IPC: C25D7/12 ,  C25D17/06 ,  C25D17/10 ,  C25D17/00

CPC classification number: C25D17/12 ,  C25D7/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D17/10 ,  C25D21/12 ,  H01L21/2885

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract translation: 描述了用于电镀的设备和方法。 本文描述的装置包括阳极支撑件，其包括定位机构，其在电镀期间保持晶片表面和可消耗阳极表面之间的一致的距离。 实现更均匀性的控制。

公开(公告)号：US07605082B1

公开(公告)日：2009-10-20

申请号：US11251353

申请日：2005-10-13

Applicant: Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

Inventor： Jonathan D. Reid ,  Eric G. Webb ,  Edmund B. Minshall ,  Avishai Kepten ,  R. Marshall Stowell ,  Steven T. Mayer

IPC: H01L21/44

CPC classification number: H01L21/7684 ,  C23C18/1607 ,  C23C18/1882 ,  C25D5/02 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76883 ,  Y10S414/135

Abstract: Methods of forming a capping layer on conductive lines in a semiconductor device may be characterized by the following operations: (a) providing a semiconductor substrate comprising a dielectric layer having (i) exposed conductive lines (e.g., copper lines) disposed therein, and (ii) an exposed barrier layer disposed thereon; and (b) depositing a capping layer material on at least the exposed conductive lines of the semiconductor substrate. In certain embodiments, the method may also involve removing at least a portion of a conductive layer (e.g., overburden) disposed over the barrier layer and conductive lines to expose the barrier layer.

Abstract translation: 在半导体器件中的导电线上形成覆盖层的方法的特征在于以下操作：（a）提供包括介电层的半导体衬底，所述电介质层具有（i）设置在其中的暴露的导电线（例如铜线）和（ ii）设置在其上的暴露的阻挡层; 和（b）在所述半导体衬底的至少暴露的导电线上沉积覆盖层材料。 在某些实施例中，该方法还可以包括移除设置在阻挡层和导电线上的导电层（例如，覆盖层）的至少一部分以暴露阻挡层。