公开(公告)号：US09011728B2

公开(公告)日：2015-04-21

申请号：US12991843

申请日：2010-07-21

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H01B1/00 ,  H01B1/22 ,  H01L23/00

CPC分类号： H01B1/22 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012 ,  H01L2224/48455

摘要： The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 μm to 10 μm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

摘要翻译： 本发明的目的是提供一种具有低电阻率且使用廉价且稳定的导电材料组合物获得的导电材料的制造方法。 可以通过包括加热含有全固化或半固化的热固性树脂和热塑性树脂中的至少一种的导电材料组合物以及银颗粒的方法来获得具有低电阻率的导电材料。 这种导电材料是包含熔融银颗粒的导电材料和平均粒径为0.1μm至10μm的热固性树脂细颗粒，并且分散在熔融银颗粒中。 此外，这种导电材料是包含熔融银颗粒的导电材料和在熔融银颗粒之间焊接的热塑性树脂。

公开(公告)号：US08679898B2

公开(公告)日：2014-03-25

申请号：US12691999

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/60

CPC分类号： H01L33/641 ,  H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，并且通过对温度为200〜900℃的热进行加热而将半导体元件和基板接合到 半导体器件和基极。

公开(公告)号：US20120059191A1

公开(公告)日：2012-03-08

申请号：US13203083

申请日：2010-02-23

申请人： Kazu Okumura ,  Miki Niwa ,  Hirosuke Matsui ,  Yoshinori Enmi ,  Takuya Tomiyama ,  Shizuyo Okuda

发明人： Kazu Okumura ,  Miki Niwa ,  Hirosuke Matsui ,  Yoshinori Enmi ,  Takuya Tomiyama ,  Shizuyo Okuda

IPC分类号： C01B39/00 ,  C07C209/74 ,  C07C1/00 ,  C07C41/30

CPC分类号： B01J35/002 ,  B01J29/126 ,  B01J37/18 ,  B01J37/30 ,  C01B39/24 ,  C07C1/26 ,  C07C1/321 ,  C07C41/30 ,  C07C45/68 ,  C07C49/796 ,  C07C67/343 ,  C07C209/68 ,  C07C2523/44 ,  C07C2529/08 ,  C07C15/14 ,  C07C15/24 ,  C07C49/784 ,  C07C69/76 ,  C07C211/45 ,  C07C43/205

摘要： There is provided a substance having much higher catalytic activity for a Suzuki-Miyaura coupling reaction than conventional heterogenous catalysts. The present invention provides a zeolite-palladium complex including USY-zeolite and Pd supported on the USY-zeolite, the Pd having a Pd—Pd coordination number of 4 or less and an oxidation number of 0.5 or less.

摘要翻译： 提供了一种比常规异源催化剂对Suzuki-Miyaura偶联反应具有高得多的催化活性的物质。 本发明提供了包含USY-沸石和负载在USY-沸石上的Pd的沸石 - 钯络合物，Pd的Pd-Pd配位数为4以下，氧化数为0.5以下。

公开(公告)号：US5466483A

公开(公告)日：1995-11-14

申请号：US260986

申请日：1994-06-15

申请人： Miki Niwa ,  Nobuaki Kodakari ,  Hisato Funabiki ,  Naonobu Katada

发明人： Miki Niwa ,  Nobuaki Kodakari ,  Hisato Funabiki ,  Naonobu Katada

IPC分类号： G01N27/12 ,  B01J20/283 ,  B05D1/18 ,  C04B41/45 ,  C04B41/52 ,  C04B41/81 ,  C04B41/89 ,  G01N1/28 ,  G01N21/25 ,  G01N30/88 ,  B05D3/02

CPC分类号： B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  C04B41/009 ,  C04B41/4572 ,  C04B41/52 ,  C04B41/81 ,  C04B41/89

摘要： A method for producing a silica mask on metal oxide surface is disclosed. Benzaldehyde is adsorbed on neutral or weak alkaline metal oxide surface, and then tetra-methoxy silane is deposited. The tetra-methoxy silane is hydrolyzed by water vapor into silica and the adsorbed benzaldehyde is removed by NH3 as benzo-nitrile. Thus a silica mask is produced on the metal oxide surface, and the mask has vacancies corresponding to the removed benzaldehyde. The vacancies act as the adsorption sites for shape selective adsorption.

摘要翻译： 公开了一种在金属氧化物表面上制备二氧化硅掩模的方法。 苯甲醛被吸附在中性或弱碱性金属氧化物表面上，然后沉积四甲氧基硅烷。 四甲氧基硅烷通过水蒸气水解成二氧化硅，吸附的苯甲醛通过NH 3作为苯并 - 腈除去。 因此，在金属氧化物表面上产生二氧化硅掩模，并且掩模具有对应于除去的苯甲醛的空位。 空位作为形状选择吸附的吸附位置。

公开(公告)号：US20100190298A1

公开(公告)日：2010-07-29

申请号：US12691999

申请日：2010-01-22

申请人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi KURAMOTO ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/60

CPC分类号： H01L33/641 ,  H01L21/187 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29 ,  H01L2224/2908 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/81907 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/3512 ,  H01L2924/0541 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, and bonding the semiconductor element and the base by applying heat having a temperature of 200 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，并且通过对温度为200〜900℃的热进行加热而将半导体元件和基板接合到 半导体器件和基极。

公开(公告)号：US20100187563A1

公开(公告)日：2010-07-29

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L33/00 ,  H01L21/60

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US08809218B2

公开(公告)日：2014-08-19

申请号：US13203083

申请日：2010-02-23

申请人： Kazu Okumura ,  Miki Niwa ,  Hirosuke Matsui ,  Yoshinori Enmi ,  Takuya Tomiyama ,  Shizuyo Okuda

发明人： Kazu Okumura ,  Miki Niwa ,  Hirosuke Matsui ,  Yoshinori Enmi ,  Takuya Tomiyama ,  Shizuyo Okuda

IPC分类号： B01J21/00 ,  B01J29/00 ,  C07C17/00 ,  C07C1/32 ,  C07C45/68 ,  B01J29/12 ,  C07C41/30 ,  C07C209/68 ,  C01B39/24 ,  C07C49/796 ,  B01J37/18 ,  B01J35/00 ,  B01J37/30 ,  C07C67/343 ,  C07C1/26

CPC分类号： B01J35/002 ,  B01J29/126 ,  B01J37/18 ,  B01J37/30 ,  C01B39/24 ,  C07C1/26 ,  C07C1/321 ,  C07C41/30 ,  C07C45/68 ,  C07C49/796 ,  C07C67/343 ,  C07C209/68 ,  C07C2523/44 ,  C07C2529/08 ,  C07C15/14 ,  C07C15/24 ,  C07C49/784 ,  C07C69/76 ,  C07C211/45 ,  C07C43/205

摘要： There is provided a substance having much higher catalytic activity for a Suzuki-Miyaura coupling reaction than conventional heterogenous catalysts. The present invention provides a zeolite-palladium complex including USY-zeolite and Pd supported on the USY-zeolite, the Pd having a Pd—Pd coordination number of 4 or less and an oxidation number of 0.5 or less.

摘要翻译： 提供了一种比常规异源催化剂对Suzuki-Miyaura偶联反应具有高得多的催化活性的物质。 本发明提供了包含USY-沸石和负载在USY-沸石上的Pd的沸石 - 钯络合物，Pd的Pd-Pd配位数为4以下，氧化数为0.5以下。

公开(公告)号：US08642392B2

公开(公告)日：2014-02-04

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/44

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US20110186340A1

公开(公告)日：2011-08-04

申请号：US12991843

申请日：2010-07-21

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa ,  Katsuaki Suganuma ,  Keun-Soo Kim

IPC分类号： H05K1/18 ,  H01B1/22

CPC分类号： H01B1/22 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48097 ,  H01L2224/48247 ,  H01L2224/48997 ,  H01L2224/73265 ,  H01L2224/83439 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00012 ,  H01L2224/48455

摘要： The object of the present invention is to provide a method for producing a conductive material that has a low electric resistivity and that is obtained using an inexpensive and stable conductive material composition. A conductive material having a low electric resistivity can be obtained by a method including the step of heating a conductive material composition that contains at least one of a full-cured or semi-cured thermosetting resin and a thermoplastic resin, as well as silver particles. Such a conductive material is a conductive material that includes fused silver particles, and thermosetting resin fine particles that have an average particle diameter of 0.1 μm to 10 μm both inclusive and are dispersed in the fused silver particles. Further, in such a conductive material is a conductive material that includes fused silver particles, and a thermoplastic resin welded among the fused silver particles.

摘要翻译： 本发明的目的是提供一种具有低电阻率且使用廉价且稳定的导电材料组合物获得的导电材料的制造方法。 可以通过包括加热含有全固化或半固化的热固性树脂和热塑性树脂中的至少一种的导电材料组合物以及银颗粒的方法来获得具有低电阻率的导电材料。 这种导电材料是包含熔融银颗粒的导电材料和平均粒径为0.1μm至10μm的热固性树脂细颗粒，并且分散在熔融银颗粒中。 此外，这种导电材料是包含熔融银颗粒的导电材料和在熔融银颗粒之间焊接的热塑性树脂。