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公开(公告)号：US20130270699A1
公开(公告)日：2013-10-17
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L23/498
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
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公开(公告)号：US09425136B2
公开(公告)日：2016-08-23
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L29/49 , H01L23/498 , H01L23/00
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
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公开(公告)号：US08664041B2
公开(公告)日：2014-03-04
申请号：US13445699
申请日：2012-04-12
申请人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo
发明人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo
CPC分类号： G06F17/5068 , H01L23/3192 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11849 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13015 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16105 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17104 , H01L2224/81191 , H01L2224/81385 , H01L2224/81444 , H01L2224/81815 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01074 , H01L2224/1144
摘要： A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.
摘要翻译： 一种用于防止在跟踪轨迹结构中的相邻金属迹线桥接的方法和装置。 一个实施例包括确定包装部件的热膨胀系数（CTE）和工艺参数。 然后分析设计参数，并且可以基于包装部件的CTE和工艺参数来修改设计参数。
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公开(公告)号：US08643196B2
公开(公告)日：2014-02-04
申请号：US13426386
申请日：2012-03-21
申请人： Chen-Hua Yu , Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Sheng-Yu Wu , Yen-Liang Lin
发明人： Chen-Hua Yu , Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Sheng-Yu Wu , Yen-Liang Lin
CPC分类号： H01L23/49811 , H01L21/76885 , H01L23/49816 , H01L24/13 , H01L24/16 , H01L2224/1145 , H01L2224/1146 , H01L2224/13005 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13082 , H01L2224/13083 , H01L2224/13147 , H01L2224/16238 , H01L2924/1306 , H01L2924/00014 , H01L2924/00012 , H01L2924/206 , H01L2924/00
摘要： The present disclosure provides an integrated circuit. The integrated circuit includes an interconnect structure formed on a substrate; a landing metal trace formed on the interconnect structure and coupled to the interconnect structure, wherein the landing metal trace includes a first width T defined in a first direction; and a metal bump post formed on and aligned with the landing metal trace, wherein the metal bump post includes a second width U defined in the first direction, and the second width U is greater than the first width T.
摘要翻译： 本发明提供集成电路。 集成电路包括形成在基板上的互连结构; 形成在所述互连结构上并联接到所述互连结构的着陆金属迹线，其中所述着陆金属迹线包括沿第一方向限定的第一宽度T; 以及形成在所述着陆金属迹线上并与所述着陆金属迹线对准的金属凸块柱，其中所述金属凸块柱包括在所述第一方向上限定的第二宽度U，并且所述第二宽度U大于所述第一宽度T.
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公开(公告)号：US20130270693A1
公开(公告)日：2013-10-17
申请号：US13445699
申请日：2012-04-12
申请人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo
发明人： Yu-Jen Tseng , Guan-Yu Chen , Sheng-Yu Wu , Chen-Hua Yu , Mirng-Ji Lii , Chen-Shien Chen , Tin-Hao Kuo
IPC分类号： H01L23/498 , G06F17/50
CPC分类号： G06F17/5068 , H01L23/3192 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05558 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/1132 , H01L2224/11334 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11849 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13015 , H01L2224/13022 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16105 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17104 , H01L2224/81191 , H01L2224/81385 , H01L2224/81444 , H01L2224/81815 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2924/01029 , H01L2924/01074 , H01L2224/1144
摘要： A method and device for preventing the bridging of adjacent metal traces in a bump-on-trace structure. An embodiment comprises determining the coefficient of thermal expansion (CTE) and process parameters of the package components. The design parameters are then analyzed and the design parameters may be modified based on the CTE and process parameters of the package components.
摘要翻译： 一种用于防止在跟踪轨迹结构中的相邻金属迹线桥接的方法和装置。 一个实施例包括确定包装部件的热膨胀系数（CTE）和工艺参数。 然后分析设计参数，并且可以基于包装部件的CTE和工艺参数来修改设计参数。
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公开(公告)号：US20130026614A1
公开(公告)日：2013-01-31
申请号：US13426386
申请日：2012-03-21
申请人： Chen-Hua Yu , Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Sheng-Yu Wu , Yen-Liang Lin
发明人： Chen-Hua Yu , Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Sheng-Yu Wu , Yen-Liang Lin
IPC分类号： H01L23/495 , H01L21/98
CPC分类号： H01L23/49811 , H01L21/76885 , H01L23/49816 , H01L24/13 , H01L24/16 , H01L2224/1145 , H01L2224/1146 , H01L2224/13005 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13082 , H01L2224/13083 , H01L2224/13147 , H01L2224/16238 , H01L2924/1306 , H01L2924/00014 , H01L2924/00012 , H01L2924/206 , H01L2924/00
摘要： The present disclosure provides an integrated circuit. The integrated circuit includes an interconnect structure formed on a substrate; a landing metal trace formed on the interconnect structure and coupled to the interconnect structure, wherein the landing metal trace includes a first width T defined in a first direction; and a metal bump post formed on and aligned with the landing metal trace, wherein the metal bump post includes a second width U defined in the first direction, and the second width U is greater than the first width T.
摘要翻译： 本发明提供集成电路。 集成电路包括形成在基板上的互连结构; 形成在所述互连结构上并联接到所述互连结构的着陆金属迹线，其中所述着陆金属迹线包括沿第一方向限定的第一宽度T; 以及形成在所述着陆金属迹线上并与所述着陆金属迹线对准的金属凸块柱，其中所述金属凸块柱包括在所述第一方向上限定的第二宽度U，并且所述第二宽度U大于所述第一宽度T.
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公开(公告)号：US09449941B2
公开(公告)日：2016-09-20
申请号：US13178161
申请日：2011-07-07
申请人： Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
发明人： Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
IPC分类号： H01L29/00 , H01L23/00 , H01L25/065 , H01L25/18
CPC分类号： H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2225/06517 , H01L2225/06562 , H01L2924/00014 , H01L2924/1434 , H01L2924/15311 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/48
摘要： A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of bond-on-trace connections, and a second function chip on top of the first function chip, directly connected to the substrate. Another package-on-package (PoP) comprises: a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of solder mask defined (SMD) connections formed on SMD bonding pads connected to solder bumps, and a second function chip on top of the first function chip, directly connected to the substrate by a plurality of bond-on-trace connections.
摘要翻译： 封装封装（PoP）包括具有多个衬底迹线的衬底，通过多个贴合在轨迹连接与衬底连接的衬底顶部的第一功能芯片，以及顶部上的第二功能芯片 的第一功能芯片，直接连接到基板。 另一个封装封装（PoP）包括：具有多个衬底迹线的衬底，通过在连接的SMD焊盘上形成的多个焊接掩模限定（SMD）连接到衬底的顶部上的第一功能芯片 焊料凸点，以及位于第一功能芯片顶部的第二功能芯片，通过多个贴合在线跟踪连接直接连接到基板。
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公开(公告)号：US20130009303A1
公开(公告)日：2013-01-10
申请号：US13178161
申请日：2011-07-07
申请人： Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
发明人： Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
IPC分类号： H01L23/498 , H01L21/50
CPC分类号： H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2225/06517 , H01L2225/06562 , H01L2924/00014 , H01L2924/1434 , H01L2924/15311 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/48
摘要： A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of bond-on-trace connections, and a second function chip on top of the first function chip, directly connected to the substrate. Another package-on-package (PoP) comprises: a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of solder mask defined (SMD) connections formed on SMD bonding pads connected to solder bumps, and a second function chip on top of the first function chip, directly connected to the substrate by a plurality of bond-on-trace connections.
摘要翻译： 封装封装（PoP）包括具有多个衬底迹线的衬底，通过多个贴合在轨迹连接与衬底连接的衬底顶部的第一功能芯片，以及顶部上的第二功能芯片 的第一功能芯片，直接连接到基板。 另一个封装封装（PoP）包括：具有多个衬底迹线的衬底，通过在连接的SMD焊盘上形成的多个焊接掩模限定（SMD）连接到衬底的顶部上的第一功能芯片 焊料凸点，以及位于第一功能芯片顶部的第二功能芯片，通过多个贴合在线跟踪连接直接连接到基板。
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公开(公告)号：US20120199966A1
公开(公告)日：2012-08-09
申请号：US13023011
申请日：2011-02-08
申请人： Tin-Hao Kuo , Yu-Feng Chen , Chen-Shien Chen , Chen-Hua Yu , Sheng-Yu Wu , Chita Chuang
发明人： Tin-Hao Kuo , Yu-Feng Chen , Chen-Shien Chen , Chen-Hua Yu , Sheng-Yu Wu , Chita Chuang
CPC分类号： H01L24/13 , H01L23/3192 , H01L24/05 , H01L24/14 , H01L2224/0401 , H01L2224/05555 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05687 , H01L2224/1145 , H01L2224/11452 , H01L2224/13012 , H01L2224/13014 , H01L2224/13022 , H01L2224/13027 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/14141 , H01L2224/81192 , H01L2924/00013 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0105 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00
摘要： An elongated bump structure for semiconductor devices is provided. An uppermost protective layer has an opening formed therethrough. A pillar is formed within the opening and extending over at least a portion of the uppermost protective layer. The portion extending over the uppermost protective layer exhibits a generally elongated shape. In an embodiment, the position of the opening relative to the portion of the bump structure extending over the uppermost protective layer is such that a ratio of a distance from an edge of the opening to an edge of the bump is greater than or equal to about 0.2. In another embodiment, the position of the opening is offset relative to center of the bump.
摘要翻译： 提供了用于半导体器件的细长凸块结构。 最上面的保护层具有通过其形成的开口。 在该开口内形成一个支柱，并延伸至最上层保护层的至少一部分。 在最上保护层上延伸的部分呈现大致细长的形状。 在一个实施例中，开口相对于在最上保护层上延伸的凸起结构的部分的位置使得从开口的边缘到凸起的边缘的距离的比例大于或等于约 0.2。 在另一个实施例中，开口的位置相对于凸块的中心偏移。
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公开(公告)号：US09093332B2
公开(公告)日：2015-07-28
申请号：US13023011
申请日：2011-02-08
申请人： Tin-Hao Kuo , Yu-Feng Chen , Chen-Shien Chen , Chen-Hua Yu , Sheng-Yu Wu , Chita Chuang
发明人： Tin-Hao Kuo , Yu-Feng Chen , Chen-Shien Chen , Chen-Hua Yu , Sheng-Yu Wu , Chita Chuang
CPC分类号： H01L24/13 , H01L23/3192 , H01L24/05 , H01L24/14 , H01L2224/0401 , H01L2224/05555 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/05687 , H01L2224/1145 , H01L2224/11452 , H01L2224/13012 , H01L2224/13014 , H01L2224/13022 , H01L2224/13027 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/14141 , H01L2224/81192 , H01L2924/00013 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/00014 , H01L2924/04941 , H01L2924/04953 , H01L2924/0105 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00012 , H01L2924/00
摘要： An elongated bump structure for semiconductor devices is provided. An uppermost protective layer has an opening formed therethrough. A pillar is formed within the opening and extending over at least a portion of the uppermost protective layer. The portion extending over the uppermost protective layer exhibits a generally elongated shape. In an embodiment, the position of the opening relative to the portion of the bump structure extending over the uppermost protective layer is such that a ratio of a distance from an edge of the opening to an edge of the bump is greater than or equal to about 0.2. In another embodiment, the position of the opening is offset relative to center of the bump.
摘要翻译： 提供了用于半导体器件的细长凸块结构。 最上面的保护层具有通过其形成的开口。 在该开口内形成一个支柱，并延伸至最上层保护层的至少一部分。 在最上保护层上延伸的部分呈现大致细长的形状。 在一个实施例中，开口相对于在最上保护层上延伸的凸起结构的部分的位置使得从开口的边缘到凸起的边缘的距离的比例大于或等于约 0.2。 在另一个实施例中，开口的位置相对于凸块的中心偏移。
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