公开(公告)号：US20050202180A1

公开(公告)日：2005-09-15

申请号：US11029165

申请日：2005-01-03

申请人： Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

发明人： Adam Cohen ,  Uri Frodis ,  Michael Lockard ,  Ananda Kumar ,  Gang Zhang ,  Dennis Smalley

IPC分类号： B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

CPC分类号： C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

摘要： Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni—P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn—Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete he process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine material as opposed to wide solid regions of structural material.

摘要翻译： 公开了用于形成单层和多层中尺度和微结构的电化学制造方法，其包括使用金刚石加工（例如飞切或车削）来平坦化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料的系统，并且可以以最小的工具磨损（例如Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 和Au和Sn-Pb），其中第一材料或材料是结构材料，第二材料是牺牲材料）。 一些实施例着重于在使用金刚石加工以平面化使用难以加工的材料进行电化学制造的结构（例如，通过沉积难以机械材料选择性且潜在地具有少量多余电镀厚度和/或预加工沉积 到所需表面水平的小增量（例如使用研磨或粗切割操作），然后使用金刚石飞切切割来完成其加工，和/或从硬质材料的薄壁区域形成结构或部分结构 而不是结构材料的宽固体区域。

公开(公告)号：US20050189959A1

公开(公告)日：2005-09-01

申请号：US11029182

申请日：2005-01-03

申请人： Adam Cohen ,  Ananda Kumar ,  Michael Lockard ,  Dennis Smalley

发明人： Adam Cohen ,  Ananda Kumar ,  Michael Lockard ,  Dennis Smalley

IPC分类号： G01R31/02 ,  H01L21/20

CPC分类号： B81C1/00111 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  G01R3/00

摘要： Some embodiments of the invention are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that partially coats the surface of the probe. Other embodiments are directed to the electrochemical fabrication of microprobes which are formed from a core material and a material that completely coats the surface of each layer from which the probe is formed including interlayer regions. These first two groups of embodiments incorporate both the core material and the coating material during the formation of each layer. Still other embodiments are directed to the electrochemical fabrication of microprobe arrays that are partially encapsulated by a dielectric material during a post layer formation coating process. In even further embodiments, the electrochemical fabrication of microprobes from two or more materials may occur by incorporating a coating material around each layer of the structure without locating the coating material in inter-layer regions.

摘要翻译： 本发明的一些实施方案涉及由芯材料和部分涂覆探针的表面的材料形成的微针的电化学制造。 其它实施方案涉及由核心材料形成的微结构的电化学制造，以及完全涂覆形成探针的每个层的表面的材料，包括中间层区域。 这些前两组实施例在形成每个层期间都包括芯材料和涂层材料。 另外的其它实施例涉及在后层形成涂覆过程中由电介质材料部分封装的微探针阵列的电化学制造。 在甚至进一步的实施方案中，来自两种或更多种材料的微结构的电化学制造可以通过在结构的每一层周围并入涂层材料而不将涂层材料定位在层间区域中而进行。

公开(公告)号：US20050126916A1

公开(公告)日：2005-06-16

申请号：US10949744

申请日：2004-09-24

申请人： Michael Lockard ,  Adam Cohen ,  Vacit Arat ,  Dennis Smalley

发明人： Michael Lockard ,  Adam Cohen ,  Vacit Arat ,  Dennis Smalley

IPC分类号： C25D1/00 ,  C25D1/08 ,  C25D5/02 ,  C25D5/10 ,  C25D7/00 ,  H01M4/02

CPC分类号： C25D1/08 ,  B33Y70/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  Y10T137/86759 ,  Y10T428/12361 ,  Y10T428/12479 ,  Y10T428/19 ,  Y10T428/24975 ,  Y10T428/249981 ,  Y10T428/29

摘要： Embodiments of multi-layer three-dimensional structures and formation methods provide structures with effective feature (e.g. opening) sizes (e.g. virtual gaps) that are smaller than a minimum feature size (MFS) that exists on each layer as a result of the formation method used in forming the structures. In some embodiments, multi-layer structures include a first element (e.g. first patterned layer with a gap) and a second element (e.g. second patterned layer with a gap) positioned adjacent the first element to define a third element (e.g. a net gap or opening resulting from the combined gaps of the first and second elements) where the first and second elements have features that are sized at least as large as the minimum feature size and the third element, at least in part, has dimensions or defines dimensions smaller than the minimum feature size.

摘要翻译： 多层三维结构和形成方法的实施例提供结构，其具有小于作为形成方法的结果存在于每个层上的最小特征尺寸（MFS）的有效特征（例如开口）尺寸（例如，虚拟间隙） 用于形成结构。 在一些实施例中，多层结构包括第一元件（例如具有间隙的第一图案化层）和邻近第一元件定位的第二元件（例如具有间隙的第二图案化层），以限定第三元件（例如，净间隙或 第一和第二元件的组合间隙产生的开口），其中第一和第二元件具有尺寸至少与最小特征尺寸一样大的特征，并且第三元件至少部分具有尺寸或尺寸小于 最小特征尺寸。

公开(公告)号：US20080105558A1

公开(公告)日：2008-05-08

申请号：US11927680

申请日：2007-10-30

申请人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

发明人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC分类号： C25D5/10

CPC分类号： B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

摘要： In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

摘要翻译： 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20070045121A1

公开(公告)日：2007-03-01

申请号：US11435809

申请日：2006-05-16

申请人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

发明人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley ,  Vacit Arat ,  Christopher Bang ,  John Dixon

IPC分类号： C25D5/02

CPC分类号： B81C1/00293 ,  B81B2201/042 ,  B81C1/00333 ,  B81C2201/0197 ,  B81C2203/0145 ,  C25D1/003 ,  G01P15/0802 ,  G01P15/125 ,  H01P1/202 ,  H01P3/06 ,  H01P5/183 ,  H01P11/00 ,  H01P11/005 ,  H05K3/4647

摘要： In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

摘要翻译： 在一些实施例中，多层结构由至少一种结构材料（例如镍），至少一种牺牲材料（例如铜）和至少一种密封材料（例如焊料）进行电化学制造。 在一些实施例中，层状结构被制成具有至少部分地且立即被牺牲材料包围的期望构型，牺牲材料又被几乎完全由结构材料包围。 周围的结构材料包括在表面中的开口，蚀刻剂可以通过该开口攻击和去除在其内发现的被捕获的牺牲材料。 密封材料位于开口附近。 在除去牺牲材料之后，将盒子抽空或填充所需的气体或液体。 此后，使密封材料流动，密封开口并重新固化。 在其他实施例中，添加了后层形成盖或其它外壳完成结构。

公开(公告)号：US20050199583A1

公开(公告)日：2005-09-15

申请号：US11029218

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  H01L21/44 ,  H01L21/4763

CPC分类号： C25D1/003 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1608 ,  C23C18/1653 ,  C25D5/022 ,  C25D5/10

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20050173374A1

公开(公告)日：2005-08-11

申请号：US11029014

申请日：2005-01-03

申请人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Kieun Kim ,  Qui Le ,  Gang Zhang ,  Uri Frodis ,  Dale McPherson ,  Dennis Smalley

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23C18/16 ,  C23F1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  H01L21/288 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： B44C1/22 ,  B33Y10/00 ,  B81C1/00492 ,  C03C15/00 ,  C03C25/68 ,  C23C18/1605 ,  C23C18/161 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/405 ,  C23F1/00 ,  C25D1/003 ,  C25D5/02 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/76885

摘要： Some embodiments of the present invention are directed to techniques for building up single layer or multi-layer structures on dielectric or partially dielectric substrates. Certain embodiments deposit seed layer material directly onto substrate materials while other embodiments use an intervening adhesion layer material. Some embodiments use different seed layer materials and/or adhesion layer materials for sacrificial and structural conductive building materials. Some embodiments apply seed layer and/or adhesion layer materials in what are effectively selective manners while other embodiments apply the materials in blanket fashion. Some embodiments remove extraneous depositions (e.g. depositions to regions unintended to form part of a layer) via planarization operations while other embodiments remove the extraneous material via etching operations. Other embodiments are directed to the electrochemical fabrication of multilayer mesoscale or microscale structures which are formed using at least one conductive structural material, at least one conductive sacrificial material, and at least one dielectric material. In some embodiments the dielectric material is a UV-curable photopolymer.

公开(公告)号：US20070199825A1

公开(公告)日：2007-08-30

申请号：US11668955

申请日：2007-01-30

申请人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley

发明人： Adam Cohen ,  Michael Lockard ,  Dennis Smalley

IPC分类号： C25D5/02

CPC分类号： C25D5/02 ,  B33Y10/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  H01P11/006

摘要： Disclosed methods reduce the discontinuities that between individual layers of a structure that is formed at least in part using electrochemical fabrication techniques. Discontinuities may exist between layers of a structure as a result of up-facing or down-facing regions defined in data descriptive of the structure or they may exist as a result of building limitations, e.g., those that result in non-parallel orientation between a building axis and sidewall surfaces of layers. Methods for reducing discontinuities may be applied to all regions or only to selected regions of the structure. Methods may be tailored to improve the accuracy between an original design of the structure and the structure as fabricated or they may simply be used to smooth the discontinuities between layers. Methods may include deposition operations that selectively favor filling of the discontinuities and/or etching operations that selectively favor removal of material from protrusions that define discontinuities.

摘要翻译： 公开的方法减少了使用电化学制造技术至少部分形成的结构的各个层之间的不连续性。 结构的层之间可能存在不连续性，这是由于在描述结构的数据中定义的面向上或向下的区域的结果，或者它们可能由于构建限制而存在，例如导致在 建筑轴线和层的侧壁表面。 用于减少不连续性的方法可以应用于所有区域或仅应用于结构的选定区域。 可以调整方法以提高结构的原始设计和所制造的结构之间的精度，或者可以简单地用于平滑层之间的不连续性。 方法可以包括选择性地有利于填充不连续性和/或蚀刻操作的沉积操作，其选择性地有利于从限定不连续性的突起中去除材料。

公开(公告)号：US20070015367A1

公开(公告)日：2007-01-18

申请号：US11523206

申请日：2006-09-19

申请人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

发明人： Adam Cohen ,  Dennis Smalley ,  Michael Lockard ,  Qui Le

IPC分类号： H01L21/311

CPC分类号： H01L21/288 ,  B33Y10/00 ,  C23C18/1605 ,  C25D5/022 ,  C25D5/10 ,  H01L21/311 ,  H01L21/7682 ,  H01L21/76879

摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrodeposited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.

摘要翻译： 从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面 的第二种材料。 第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除 材料。 在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料被电沉积（例如使用电镀或电泳工艺）。 在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

公开(公告)号：US20060226015A1

公开(公告)日：2006-10-12

申请号：US11325405

申请日：2006-01-03

申请人： Dennis Smalley ,  Adam Cohen ,  Ananda Kumar ,  Michael Lockard

发明人： Dennis Smalley ,  Adam Cohen ,  Ananda Kumar ,  Michael Lockard

IPC分类号： C25D5/02

CPC分类号： A61N1/00 ,  C23C18/1605 ,  C23C18/1651 ,  C25D1/003 ,  C25D1/20 ,  C25D5/022 ,  G01R1/0483 ,  G01R1/06716 ,  G01R1/07357 ,  G01R31/2886 ,  H05K3/467 ,  H05K3/4682

摘要： Electrochemical fabrication processes and apparatus for producing multi-layer structures where each layer includes the deposition of at least two materials and wherein the formation of at least some layers including operations for providing coatings of dielectric material that isolate at least-portions of a first conductive material from (1) other portions of the first conductive material, (2) a second conductive material, or (3) another dielectric material, and wherein the thickness of the dielectric coatings are thin compared to the thicknesses of the layers used in forming the structures. In some preferred embodiments, portions of each individual layer are encapsulated by dielectric material while in other embodiments only boundaries between distinct regions of materials are isolated from one another by dielectric barriers.

摘要翻译： 用于生产多层结构的电化学制造方法和装置，其中每个层包括至少两种材料的沉积，并且其中形成至少一些层，包括用于提供绝缘材料的涂层的操作，所述介电材料的涂层隔离第一导电材料的至少一部分 从（1）第一导电材料的其他部分，（2）第二导电材料或（3）另一种介电材料，并且其中电介质涂层的厚度与用于形成结构的层的厚度相比较薄 。 在一些优选实施例中，每个单独层的部分被电介质材料包封，而在其它实施例中，材料的不同区域之间的边界通过电介质屏障彼此隔离。