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    METHOD FOR PLUGGING A HOLE AND A PLUGGED HOLE
    1.
    发明申请
    METHOD FOR PLUGGING A HOLE AND A PLUGGED HOLE 有权
    用于插入孔和插入孔的方法

    公开(公告)号：US20130012078A1

    公开(公告)日：2013-01-10

    申请号：US13511486

    申请日：2010-12-17

    申请人： Andreas Fischer ,  Göran Stemme ,  Frank Niklaus ,  Niklas Roxhed

    发明人： Andreas Fischer ,  Göran Stemme ,  Frank Niklaus ,  Niklas Roxhed

    IPC分类号： B81C1/00 ,  H01R13/02

    CPC分类号： B81C1/00293 ,  B01L3/502707 ,  B01L2300/042 ,  B81B2201/058 ,  B81B2203/0315 ,  B81C2201/019 ,  B81C2203/0145 ,  Y10T29/49117 ,  Y10T29/49151 ,  Y10T29/49153 ,  Y10T29/49826 ,  Y10T29/49885

    摘要： A method for at least partially inserting a plug into a hole, said method comprising the steps of a) providing a at least one substrate with at least one hole wherein said at least one hole has a largest dimension of from 1 μm to 300 μm, b) providing a piece of material, wherein said piece of material has a larger dimension than said at least one hole, c) pressing said piece of material against the hole with a tool so that a plug is formed, wherein at least a part of said piece of material is pressed into said hole, d) removing the tool from the piece of material. There is further disclosed a plugged hole manufactured with the method. One advantage of an embodiment is that an industrially available wire bonding technology can be used to seal various cavities. The existing wire bonding technology makes the plugging fast and cheap.

    摘要翻译： 一种用于至少部分地将插头插入孔中的方法，所述方法包括以下步骤：a）提供具有至少一个孔的至少一个基底，其中所述至少一个孔具有1μm至300μm的最大尺寸， b）提供一块材料，其中所述材料片具有比所述至少一个孔更大的尺寸，c）用工具将所述材料件压靠在孔上，从而形成插塞，其中至少部分 所述材料被压入所述孔中，d）从所述材料上移除所述工具。 还公开了一种使用该方法制造的堵塞孔。 一个实施例的一个优点是可以使用工业上可用的引线接合技术来密封各种空腔。 现有的导线接合技术使堵塞快速便宜。

    Method for plugging a hole
    2.
    发明授权
    Method for plugging a hole 有权
    堵塞孔的方法

    公开(公告)号：US09027239B2

    公开(公告)日：2015-05-12

    申请号：US13511486

    申请日：2010-12-17

    申请人： Andreas Fischer ,  Göran Stemme ,  Frank Niklaus ,  Niklas Roxhed

    发明人： Andreas Fischer ,  Göran Stemme ,  Frank Niklaus ,  Niklas Roxhed

    IPC分类号： H01R9/00 ,  H05K3/00 ,  B81C1/00 ,  B01L3/00

    CPC分类号： B81C1/00293 ,  B01L3/502707 ,  B01L2300/042 ,  B81B2201/058 ,  B81B2203/0315 ,  B81C2201/019 ,  B81C2203/0145 ,  Y10T29/49117 ,  Y10T29/49151 ,  Y10T29/49153 ,  Y10T29/49826 ,  Y10T29/49885

    摘要： A method for at least partially inserting a plug into a hole, said method comprising the steps of a) providing a at least one substrate with at least one hole wherein said at least one hole has a largest dimension of from 1 μm to 300 μm, b) providing a piece of material, wherein said piece of material has a larger dimension than said at least one hole, c) pressing said piece of material against the hole with a tool so that a plug is formed, wherein at least a part of said piece of material is pressed into said hole, d) removing the tool from the piece of material. There is further disclosed a plugged hole manufactured with the method. One advantage of an embodiment is that an industrially available wire bonding technology can be used to seal various cavities. The existing wire bonding technology makes the plugging fast and cheap.

    摘要翻译： 一种用于至少部分地将插头插入孔中的方法，所述方法包括以下步骤：a）提供具有至少一个孔的至少一个基底，其中所述至少一个孔具有1μm至300μm的最大尺寸， b）提供一块材料，其中所述材料片具有比所述至少一个孔更大的尺寸，c）用工具将所述材料件压靠在孔上，从而形成插塞，其中至少部分 所述材料被压入所述孔中，d）从所述材料上移除所述工具。 还公开了一种使用该方法制造的堵塞孔。 一个实施例的一个优点是可以使用工业上可用的引线接合技术来密封各种空腔。 现有的导线接合技术使堵塞快速便宜。

    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES
    5.
    发明申请
    FREE FORM PRINTING OF SILICON MICRO- AND NANOSTRUCTURES 审中-公开
    自由形式印刷硅微结构和纳米结构

    公开(公告)号：US20130029480A1

    公开(公告)日：2013-01-31

    申请号：US13639221

    申请日：2011-04-05

    申请人： Frank Niklaus ,  Andreas Fischer

    发明人： Frank Niklaus ,  Andreas Fischer

    IPC分类号： H01L21/20 ,  H01L21/205

    CPC分类号： B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

    摘要： A method of making a three-dimensional structure in semiconductor material includes providing a substrate (20) is provided having at least a surface including semiconductor material. Selected areas of the surface of the substrate are exposed to a focussed ion beam whereby the ions are implanted in the semiconductor material in the selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focussed ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focussed ion beam is etched away so as to provide a three-dimensional structure on the substrate (20).

    摘要翻译： 在半导体材料中制造三维结构的方法包括提供至少具有包括半导体材料的表面的基底（20）。 将基板的表面的选定区域暴露于聚焦的离子束，由此将离子注入到所选择的区域中的半导体材料中。 选自由单晶，多晶或非晶半导体材料组成的组的几层材料沉积在衬底表面上，并且在沉积之间聚焦离子束以暴露表面以便限定三维结构 。 不会被聚焦的离子束限定的最终结构（30）的部分的材料被蚀刻掉，以便在衬底（20）上提供三维结构。

    Methods for preventing plasma un-confinement events in a plasma processing chamber
    8.
    发明授权
    Methods for preventing plasma un-confinement events in a plasma processing chamber 有权

    公开(公告)号：US09928995B2

    公开(公告)日：2018-03-27

    申请号：US12820020

    申请日：2010-06-21

    申请人： Andreas Fischer ,  Rajinder Dhindsa

    发明人： Andreas Fischer ,  Rajinder Dhindsa

    IPC分类号： B23P6/00 ,  H01J37/32

    CPC分类号： H01J37/32495 ,  H01J37/32082 ,  H01J37/32623 ,  Y10T29/49718

    摘要： A method for configuring a plasma processing chamber for preventing a plasma un-confinement event during processing of a substrate from occurring outside of a confined plasma sustaining region is provided. The confined plasma sustaining region is defined by a set of confinement rings surrounding a bottom portion of an electrode is provided. The method includes determining a worst-case Debye length for a plasma generated in the plasma processing chamber during the processing. The method also includes performing at least one of adjusting gaps between any pair of adjacent confinement rings and adding at least one additional confinement ring to ensure that a gap between the any pair of adjacent confinement rings is less than the worst-case Debye length.

    Plasma ignition and sustaining methods and apparatuses
    9.
    发明授权
    Plasma ignition and sustaining methods and apparatuses 有权
    等离子体点火和维持方法和装置

    公开(公告)号：US09174296B2

    公开(公告)日：2015-11-03

    申请号：US12908459

    申请日：2010-10-20

    申请人： Neil Martin Paul Benjamin ,  Andreas Fischer

    发明人： Neil Martin Paul Benjamin ,  Andreas Fischer

    IPC分类号： B23K9/00 ,  B23K10/00 ,  B23K9/013

    CPC分类号： H01J37/32541 ,  B23K9/013 ,  B23K10/00 ,  B23K2101/40 ,  H01J37/3211

    摘要： An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

    摘要翻译： 一种用于产生等离子体的装置，包括等离子体发生容器和具有线圈长度的线圈和第一组部分封闭的纵向导电（PELOC）指状物和第二组PELOC指状物。 PELOC手指组沿着容器的纵向轴线定向，每个部分包围容器的周边。 两组PELOC手指是面向指尖的定向指尖，并且以小于线圈长度的间隔距离分开。

    Integrated capacitive and inductive power sources for a plasma etching chamber
    10.
    发明授权
    Integrated capacitive and inductive power sources for a plasma etching chamber 有权
    用于等离子体蚀刻室的集成电容和感应电源

    公开(公告)号：US08911590B2

    公开(公告)日：2014-12-16

    申请号：US11363703

    申请日：2006-02-27

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

    CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

    摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

    摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。