公开(公告)号：US08722224B2

公开(公告)日：2014-05-13

申请号：US13339803

申请日：2011-12-29

申请人： BumHyun Lee ,  MinJung Kim ,  Jin Kyu Lee ,  HeeSoo Yoon ,  DalMo Kang ,  Jong Moon Yoon

发明人： BumHyun Lee ,  MinJung Kim ,  Jin Kyu Lee ,  HeeSoo Yoon ,  DalMo Kang ,  Jong Moon Yoon

IPC分类号： H01M10/50 ,  H01M2/10 ,  H01M2/36

CPC分类号： H01M2/1077 ,  H01M10/613 ,  H01M10/647 ,  H01M10/6551 ,  H01M10/6556 ,  H01M10/6557 ,  H01M10/6568

摘要： Disclosed is a battery pack configured to have a structure in which two or more battery modules, each including a plurality of battery cells or unit modules (unit cells) which can be charged and discharged, are mounted in a space defined between a pack case and a base plate, wherein cooling members, each including a heat dissipation fin disposed in contact with outsides of corresponding ones of the unit cells and a coolant conduit connected to a lower end of the heat dissipation fin to allow a coolant to flow therealong, are mounted at interfaces between the unit cells, the base plate, located below the battery modules, is configured to form a coolant flow channel having a coolant flow direction corresponding to the coolant flow direction in the coolant conduit, the pack case is coupled to the base plate in a state in which the battery modules are mounted on the base plate.

摘要翻译： 公开了一种电池组，其被配置为具有两个或更多个电池模块，每个电池模块包括可以充放电的多个电池单元或单元模块（单元电池），其被安装在包装盒和包装盒 基板，其中，各冷却部件各自包括设置成与相应单元电池的外部接触的散热片和连接到散热片的下端以允许冷却剂沿其流动的冷却剂导管， 在单元电池之间的接口处，位于电池模块下方的基板被构造成形成具有与冷却剂导管中的冷却剂流动方向相对应的冷却剂流动方向的冷却剂流动通道，所述包装盒联接到基板 在电池模块安装在基板上的状态下。

公开(公告)号：US09401289B2

公开(公告)日：2016-07-26

申请号：US13488029

申请日：2012-06-04

申请人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

发明人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

IPC分类号： H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L21/683

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

摘要翻译： 半导体器件具有形成在晶片的第一表面上的互连结构的半导体晶片。 在半导体晶片的非有源区域中，部分地通过半导体晶片从第一表面形成沟槽。 在第一表面和沟槽中形成保护涂层。 在保护涂层上涂覆层压胶带。 半导体晶片的第二表面的一部分通过背面研磨或晶片变薄去除以暴露沟槽中的保护涂层。 将芯片附着膜施加在半导体晶片的第二表面上。 使用激光在沟槽下的管芯附着膜中形成切割或改性区域。 半导体晶片被扩展以分离芯片附着膜的切割或改性区域并使半导体晶片分离。

公开(公告)号：US20150318259A1

公开(公告)日：2015-11-05

申请号：US14696741

申请日：2015-04-27

申请人： KyungOe Kim ,  Seong Won Park ,  MinJung Kim ,  ChangHwan Kim ,  ByungHyun Kwak ,  WanIl Lee

发明人： KyungOe Kim ,  Seong Won Park ,  MinJung Kim ,  ChangHwan Kim ,  ByungHyun Kwak ,  WanIl Lee

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L2224/13005 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/1601 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16113 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2224/80011 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81385 ,  H01L2224/81395 ,  H01L2224/81801 ,  H01L2224/81947 ,  H01L2224/81948 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/2064 ,  H01L2924/014 ,  H01L2924/00014

摘要： An integrated circuit packaging system, and a method of manufacture thereof, includes: an integrated circuit; a substrate having a substrate contact; an internal interconnect between the substrate and the integrated circuit, the internal interconnect is a no-reflow connection directly on the substrate contact and the integrated circuit; and an encapsulation over the internal interconnect.

摘要翻译： 一种集成电路封装系统及其制造方法，包括：集成电路; 具有基板接触的基板; 在衬底和集成电路之间的内部互连，内部互连是直接在衬底触点和集成电路上的无回流连接; 以及在内部互连上的封装。

公开(公告)号：US20130154085A1

公开(公告)日：2013-06-20

申请号：US13325530

申请日：2011-12-14

申请人： DaeSik Choi ,  SangMi Park ,  MinJung Kim ,  MinWook Yu

发明人： DaeSik Choi ,  SangMi Park ,  MinJung Kim ,  MinWook Yu

IPC分类号： H01L23/34 ,  H01L21/50

CPC分类号： H01L23/36 ,  H01L21/50 ,  H01L23/10 ,  H01L23/49816 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting an integrated circuit over the substrate; mounting a lid base over the substrate, the lid base having a base indentation and a hole with the integrated circuit within the hole; and mounting a heat slug over the lid base, the heat slug having a slug non-horizontal side partially within the base indentation.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供基板; 在基板上安装集成电路; 在基板上安装盖基座，盖基座具有基座凹口和孔内的集成电路; 并且将热块安装在盖底部上，热块具有部分在基底凹陷内的非水平侧段。

公开(公告)号：US20130320519A1

公开(公告)日：2013-12-05

申请号：US13488029

申请日：2012-06-04

申请人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

发明人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

IPC分类号： H01L21/78 ,  H01L23/48

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

摘要翻译： 半导体器件具有形成在晶片的第一表面上的互连结构的半导体晶片。 在半导体晶片的非有源区域中，部分地通过半导体晶片从第一表面形成沟槽。 在第一表面和沟槽中形成保护涂层。 在保护涂层上涂覆层压胶带。 半导体晶片的第二表面的一部分通过背面研磨或晶片变薄去除以暴露沟槽中的保护涂层。 将芯片附着膜施加在半导体晶片的第二表面上。 使用激光在沟槽下的管芯附着膜中形成切割或改性区域。 半导体晶片被扩展以分离芯片附着膜的切割或改性区域并使半导体晶片分离。

公开(公告)号：US08372695B2

公开(公告)日：2013-02-12

申请号：US12950631

申请日：2010-11-19

申请人： SangMi Park ,  MinJung Kim

发明人： SangMi Park ,  MinJung Kim

IPC分类号： H01L21/00 ,  H01L23/28

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a substrate base side and a substrate stack side; mounting an integrated circuit over the substrate stack side; attaching a stack connector to the substrate stack side; forming an encapsulation over the stack connector and the integrated circuit; attaching an external connector to the substrate base side; attaching an adhesive tape to the external connector having spacing between the adhesive tape and the substrate base side; cutting a step portion in the encapsulation to expose the stack connector; cutting a singulation kerf in the package substrate having exit damage on the substrate base side; and removing the adhesive tape.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供具有基板基面侧和基板叠层侧的封装基板; 在衬底堆叠侧上安装集成电路; 将堆叠连接器附接到基板堆叠侧; 在堆叠连接器和集成电路上形成封装; 将外部连接器附接到基板基座侧; 将粘合带附接到具有在所述胶带和所述基板基部侧之间的间隔的所述外部连接器; 在封装中切割台阶部分以露出堆叠连接器; 在具有基板基面侧的出口损坏的封装基板上切割单切割切口; 并去除胶带。

公开(公告)号：US20120126428A1

公开(公告)日：2012-05-24

申请号：US12950631

申请日：2010-11-19

申请人： SangMi Park ,  MinJung Kim

发明人： SangMi Park ,  MinJung Kim

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a substrate base side and a substrate stack side; mounting an integrated circuit over the substrate stack side; attaching a stack connector to the substrate stack side; forming an encapsulation over the stack connector and the integrated circuit; attaching an external connector to the substrate base side; attaching an adhesive tape to the external connector having spacing between the adhesive tape and the substrate base side; cutting a step portion in the encapsulation to expose the stack connector; cutting a singulation kerf in the package substrate having exit damage on the substrate base side; and removing the adhesive tape.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供具有基板基面侧和基板叠层侧的封装基板; 在衬底堆叠侧上安装集成电路; 将堆叠连接器附接到基板堆叠侧; 在堆叠连接器和集成电路上形成封装; 将外部连接器附接到基板基座侧; 将粘合带附接到具有在所述胶带和所述基板基部侧之间的间隔的所述外部连接器; 在封装中切割台阶部分以露出堆叠连接器; 在具有基板基面侧的出口损坏的封装基板上切割单切割切口; 并去除胶带。

公开(公告)号：US09693455B1

公开(公告)日：2017-06-27

申请号：US14227346

申请日：2014-03-27

申请人： Seong Won Park ,  Hun Teak Lee ,  WoonJae Beak ,  MinJung Kim ,  ChangHwan Kim ,  ByungHyun Kwak ,  GwangTae Kim ,  HeeSoo Lee

发明人： Seong Won Park ,  Hun Teak Lee ,  WoonJae Beak ,  MinJung Kim ,  ChangHwan Kim ,  ByungHyun Kwak ,  GwangTae Kim ,  HeeSoo Lee

IPC分类号： H05K1/11 ,  H05K3/36 ,  H05K3/40 ,  H05K1/09 ,  H05K1/18 ,  H05K1/14 ,  H05K3/32 ,  H05K3/46

CPC分类号： H05K1/112 ,  H01L2224/16225 ,  H01L2224/73204 ,  H05K1/09 ,  H05K1/113 ,  H05K1/14 ,  H05K1/18 ,  H05K1/186 ,  H05K3/32 ,  H05K3/36 ,  H05K3/4007 ,  H05K3/4038 ,  H05K3/46 ,  H05K3/4614 ,  H05K3/4623 ,  H05K2201/04 ,  H05K2203/061 ,  H05K2203/0733

摘要： A system and method of manufacture of an integrated circuit packaging system includes: a copper film; a first metal layer directly on the copper film; an insulation layer directly on and over the first metal layer, the insulation layer having a via hole through the insulation layer; a conductive via within the via hole and directly on the first metal layer; a second metal layer directly on the conductive via and the insulation layer; a copper post directly on the copper film; a solder pad over the copper post; and an interposer coupled to the copper post and the solder pad.

公开(公告)号：US08703535B2

公开(公告)日：2014-04-22

申请号：US13490908

申请日：2012-06-07

申请人： MinJung Kim ,  DaeSik Choi ,  MinWook Yu ,  YiSu Park

发明人： MinJung Kim ,  DaeSik Choi ,  MinWook Yu ,  YiSu Park

IPC分类号： H01L21/00

CPC分类号： H01L23/49816 ,  H01L2224/16225 ,  H01L2924/15311

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a package substrate having a warpage-compensation zone with a substrate-interior layer exposed from a top substrate-cover, and the warpage-compensation zone having contiguous exposed portion of the substrate-interior layer over corner portions of the package substrate; connecting an integrated circuit die to the package substrate with an internal interconnect; and forming an encapsulation over the integrated circuit die, with the encapsulation directly on the substrate-interior layer in the warpage-compensation zone.

摘要翻译： 一种制造集成电路封装系统的方法包括：提供具有翘曲补偿区域的封装基板，其具有从顶部基板盖露出的基板内部层，并且所述翘曲补偿区域具有基板 - 在封装衬底的角部上的内层; 将集成电路管芯与内部互连连接到封装衬底; 以及在整个集成电路管芯上形成封装，其中封装直接在翘曲补偿区域中的衬底内层上。

公开(公告)号：US20130113118A1

公开(公告)日：2013-05-09

申请号：US13289811

申请日：2011-11-04

申请人： MinJung Kim ,  JoungIn Yang ,  DaeSik Choi ,  KyungEun Kim

发明人： MinJung Kim ,  JoungIn Yang ,  DaeSik Choi ,  KyungEun Kim

IPC分类号： H01L23/48 ,  H01L21/58

CPC分类号： H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/8159 ,  H01L2224/816 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die with bumps formed over a surface of the semiconductor die. A conductive layer is formed over a substrate. A patterning layer is formed over the substrate and conductive layer. A masking layer having an opaque portion and linear gradient contrast portion is formed over the patterning layer. The linear gradient contrast portion transitions from near transparent to near opaque. The patterning layer is exposed to ultraviolet light through the masking layer. The masking layer is removed and a portion of the patterning layer is removed to form an opening having a sloped surface to expose the conductive layer. The sloped surface in patterning layer can be formed by laser direct ablation. The semiconductor die is mounted to the substrate with the bumps electrically connected to the conductive layer and physically separated from the patterning layer.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的凸起的半导体管芯。 在衬底上形成导电层。 在衬底和导电层上形成图形层。 在图案化层上形成具有不透明部分和线性梯度对比部分的掩模层。 线性梯度对比部分从近透明转变为近似不透明。 图案化层通过掩模层暴露于紫外光。 去除掩模层，去除图形层的一部分以形成具有倾斜表面的开口以暴露导电层。 图案化层中的倾斜表面可以通过激光直接烧蚀形成。 将半导体管芯安装到基板上，凸块与导电层电连接并与图形层物理分离。