公开(公告)号：US20130113118A1

公开(公告)日：2013-05-09

申请号：US13289811

申请日：2011-11-04

申请人： MinJung Kim ,  JoungIn Yang ,  DaeSik Choi ,  KyungEun Kim

发明人： MinJung Kim ,  JoungIn Yang ,  DaeSik Choi ,  KyungEun Kim

IPC分类号： H01L23/48 ,  H01L21/58

CPC分类号： H01L23/49816 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/8159 ,  H01L2224/816 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2924/00011 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die with bumps formed over a surface of the semiconductor die. A conductive layer is formed over a substrate. A patterning layer is formed over the substrate and conductive layer. A masking layer having an opaque portion and linear gradient contrast portion is formed over the patterning layer. The linear gradient contrast portion transitions from near transparent to near opaque. The patterning layer is exposed to ultraviolet light through the masking layer. The masking layer is removed and a portion of the patterning layer is removed to form an opening having a sloped surface to expose the conductive layer. The sloped surface in patterning layer can be formed by laser direct ablation. The semiconductor die is mounted to the substrate with the bumps electrically connected to the conductive layer and physically separated from the patterning layer.

摘要翻译： 半导体器件具有形成在半导体管芯的表面上的凸起的半导体管芯。 在衬底上形成导电层。 在衬底和导电层上形成图形层。 在图案化层上形成具有不透明部分和线性梯度对比部分的掩模层。 线性梯度对比部分从近透明转变为近似不透明。 图案化层通过掩模层暴露于紫外光。 去除掩模层，去除图形层的一部分以形成具有倾斜表面的开口以暴露导电层。 图案化层中的倾斜表面可以通过激光直接烧蚀形成。 将半导体管芯安装到基板上，凸块与导电层电连接并与图形层物理分离。

公开(公告)号：US08710640B2

公开(公告)日：2014-04-29

申请号：US13325359

申请日：2011-12-14

申请人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  KyungEun Kim

发明人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  KyungEun Kim

IPC分类号： H01L23/02

CPC分类号： H01L23/36 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/1815

摘要： A method of manufacture of an integrated circuit packaging system includes: mounting an integrated circuit over a package carrier; mounting a conductive connector over the package carrier; forming an encapsulation over the integrated circuit, the encapsulation having a recess exposing the conductive connector; and mounting a heat slug over the encapsulation, the heat slug having an opening with an opening width greater than a recess width of the recess, the opening exposing a portion of a top surface of the encapsulation.

摘要翻译： 集成电路封装系统的制造方法包括：将集成电路安装在封装载体上; 将导电连接器安装在封装载体上; 在所述集成电路上形成封装，所述封装具有露出所述导电连接器的凹部; 并且将热块安装在所述封装件上，所述热芯块具有开口宽度大于所述凹部的凹陷宽度的开口，所述开口暴露所述封装的顶部表面的一部分。

公开(公告)号：US20130154078A1

公开(公告)日：2013-06-20

申请号：US13325359

申请日：2011-12-14

申请人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  KyungEun Kim

发明人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  KyungEun Kim

IPC分类号： H01L23/36 ,  H01L21/56

CPC分类号： H01L23/36 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1094 ,  H01L2924/15311 ,  H01L2924/1815

摘要： A method of manufacture of an integrated circuit packaging system includes: mounting an integrated circuit over a package carrier; mounting a conductive connector over the package carrier; forming an encapsulation over the integrated circuit, the encapsulation having a recess exposing the conductive connector; and mounting a heat slug over the encapsulation, the heat slug having an opening with an opening width greater than a recess width of the recess, the opening exposing a portion of a top surface of the encapsulation.

摘要翻译： 集成电路封装系统的制造方法包括：将集成电路安装在封装载体上; 将导电连接器安装在封装载体上; 在所述集成电路上形成封装，所述封装具有露出所述导电连接器的凹部; 并且将热块安装在所述封装件上，所述热芯块具有开口宽度大于所述凹部的凹陷宽度的开口，所述开口暴露所述封装的顶部表面的一部分。

公开(公告)号：US09401289B2

公开(公告)日：2016-07-26

申请号：US13488029

申请日：2012-06-04

申请人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

发明人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

IPC分类号： H01L21/78 ,  H01L21/56 ,  H01L23/31 ,  H01L21/683

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

摘要翻译： 半导体器件具有形成在晶片的第一表面上的互连结构的半导体晶片。 在半导体晶片的非有源区域中，部分地通过半导体晶片从第一表面形成沟槽。 在第一表面和沟槽中形成保护涂层。 在保护涂层上涂覆层压胶带。 半导体晶片的第二表面的一部分通过背面研磨或晶片变薄去除以暴露沟槽中的保护涂层。 将芯片附着膜施加在半导体晶片的第二表面上。 使用激光在沟槽下的管芯附着膜中形成切割或改性区域。 半导体晶片被扩展以分离芯片附着膜的切割或改性区域并使半导体晶片分离。

公开(公告)号：US20130105963A1

公开(公告)日：2013-05-02

申请号：US13287035

申请日：2011-11-01

申请人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  Sang Mi Park ,  MinWook Yu

发明人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  Sang Mi Park ,  MinWook Yu

IPC分类号： H01L23/34 ,  H01L21/50

CPC分类号： H01L21/6835 ,  H01L23/36 ,  H01L23/42 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L29/0657 ,  H01L2221/68345 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/8485 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2224/11 ,  H01L2924/0665 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2224/32057 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.

摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯的后表面中形成有在半导体管芯的至少两侧具有侧壁的半导体管芯的边缘的凹部。 通过去除模具的后表面的一部分，或者通过在模具的至少两侧上形成阻挡层来形成侧壁。 可以在半导体管芯的后表面中形成通道以容纳TIM。 在凹部中形成有TIM。 散热器安装在TIM上的凹部中，散热器的下脚部分热连接到基板。 侧壁包含TIM以保持散热器和半导体管芯的后表面之间的TIM的均匀覆盖。

公开(公告)号：US20130320519A1

公开(公告)日：2013-12-05

申请号：US13488029

申请日：2012-06-04

申请人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

发明人： MinJung Kim ,  KyungHoon Lee ,  JoungIn Yang ,  WonIl Kwon ,  DaeSik Choi

IPC分类号： H01L21/78 ,  H01L23/48

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3171 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

摘要翻译： 半导体器件具有形成在晶片的第一表面上的互连结构的半导体晶片。 在半导体晶片的非有源区域中，部分地通过半导体晶片从第一表面形成沟槽。 在第一表面和沟槽中形成保护涂层。 在保护涂层上涂覆层压胶带。 半导体晶片的第二表面的一部分通过背面研磨或晶片变薄去除以暴露沟槽中的保护涂层。 将芯片附着膜施加在半导体晶片的第二表面上。 使用激光在沟槽下的管芯附着膜中形成切割或改性区域。 半导体晶片被扩展以分离芯片附着膜的切割或改性区域并使半导体晶片分离。

公开(公告)号：US09281228B2

公开(公告)日：2016-03-08

申请号：US13287035

申请日：2011-11-01

申请人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  Sang Mi Park ,  MinWook Yu

发明人： DaeSik Choi ,  JoungIn Yang ,  MinJung Kim ,  Sang Mi Park ,  MinWook Yu

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L23/36 ,  H01L23/42 ,  H01L29/06 ,  H01L25/065 ,  H01L23/00

CPC分类号： H01L21/6835 ,  H01L23/36 ,  H01L23/42 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L29/0657 ,  H01L2221/68345 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/26145 ,  H01L2224/29007 ,  H01L2224/29011 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/8485 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10158 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/16251 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2224/11 ,  H01L2924/0665 ,  H01L2224/27 ,  H01L2224/83 ,  H01L2224/32057 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2224/81805

摘要： A semiconductor device has a semiconductor die mounted to a substrate. A recess is formed in a back surface of the semiconductor die to an edge of the semiconductor die with sidewalls on at least two sides of the semiconductor die. The sidewalls are formed by removing a portion of the back surface of the die, or by forming a barrier layer on at least two sides of the die. A channel can be formed in the back surface of the semiconductor die to contain the TIM. A TIM is formed in the recess. A heat spreader is mounted in the recess over the TIM with a down leg portion of the heat spreader thermally connected to the substrate. The sidewalls contain the TIM to maintain uniform coverage of the TIM between the heat spreader and back surface of the semiconductor die.

摘要翻译： 半导体器件具有安装到衬底的半导体管芯。 在半导体管芯的后表面中形成有在半导体管芯的至少两侧具有侧壁的半导体管芯的边缘的凹部。 侧壁通过去除模具的后表面的一部分，或者通过在模具的至少两侧上形成阻挡层而形成。 可以在半导体管芯的后表面中形成通道以容纳TIM。 在凹部中形成有TIM。 散热器安装在TIM上的凹部中，散热器的下脚部分热连接到基板。 侧壁包含TIM以保持散热器和半导体管芯的后表面之间的TIM的均匀覆盖。

公开(公告)号：US20130328220A1

公开(公告)日：2013-12-12

申请号：US13494721

申请日：2012-06-12

申请人： KyungHoon Lee ,  JoungIn Yang ,  SangMi Park ,  YiSu Park ,  DaeSik Choi

发明人： KyungHoon Lee ,  JoungIn Yang ,  SangMi Park ,  YiSu Park ,  DaeSik Choi

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3121 ,  H01L21/565 ,  H01L21/6836 ,  H01L23/49827 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2924/18161 ,  H01L2924/014

摘要： A method of manufacture of an integrated circuit packaging system includes: providing a substrate; forming an integrated circuit device having a shaped side; mounting the integrated circuit device on the substrate; forming an encapsulation on the substrate and the integrate circuit device with the shaped side partially exposed from the encapsulation.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供基板; 形成具有成形侧的集成电路器件; 将集成电路器件安装在衬底上; 在衬底和集成电路器件上形成封装，其中成形侧部分地从封装暴露出来。

公开(公告)号：US20130299995A1

公开(公告)日：2013-11-14

申请号：US13466945

申请日：2012-05-08

申请人： KyungHoon Lee ,  JoungIn Yang ,  Sang Mi Park ,  DaeSik Choi ,  YiSu Park

发明人： KyungHoon Lee ,  JoungIn Yang ,  Sang Mi Park ,  DaeSik Choi ,  YiSu Park

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/563 ,  H01L24/16 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/26175 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/83385 ,  H01L2224/92125 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/00

摘要： A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.

摘要翻译： 半导体器件具有在衬底的表面上形成的衬底和绝缘层。 在衬底的表面上形成第一导电层。 在衬底的相对表面上形成第二导电层。 通过衬底形成导电通孔。 在绝缘层中形成开口，同时保持第一导电层的完整性。 开口以非线性侧面或线性侧面变窄。 开口可以具有矩形形状。 半导体管芯安装在衬底的表面上。 在半导体管芯和衬底之间沉积底部填充材料。 绝缘层中的开口减小靠近开口的底部填充材料的流速。 靠近开口的底部填充材料的流速基本上等于底部填充材料远离开口的流速。

公开(公告)号：US20130334714A1

公开(公告)日：2013-12-19

申请号：US13526877

申请日：2012-06-19

申请人： YiSu Park ,  KyungHoon Lee ,  JoungIn Yang ,  SangMi Park ,  DaeSik Choi

发明人： YiSu Park ,  KyungHoon Lee ,  JoungIn Yang ,  SangMi Park ,  DaeSik Choi

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L23/3135 ,  H01L2224/16225 ,  H01L2924/15311

摘要： A method of manufacture of an integrated circuit packaging system includes providing a substrate; connecting an integrated circuit die; forming a molding having a temperature-dependent characteristic directly on the top surface of the substrate; and forming a coupling encapsulation having a coupled characteristic different from the temperature-dependent characteristic directly on the molding forms an encapsulation boundary between the coupling encapsulation and the molding.

摘要翻译： 一种集成电路封装系统的制造方法，包括：提供基板; 连接集成电路管芯; 在衬底的顶表面上直接形成具有温度依赖特性的模制品; 并且形成具有与温度相关特性不同的耦合特性的耦合封装，直接在模塑件上形成耦合封装和模制件之间的封装边界。