Ball grid array semiconductor package with exposed base layer
    2.
    发明授权
    Ball grid array semiconductor package with exposed base layer 有权
    球栅阵列半导体封装,具有暴露的基极层

    公开(公告)号:US06528722B2

    公开(公告)日:2003-03-04

    申请号:US09235095

    申请日:1999-01-21

    IPC分类号: H01L2328

    摘要: A Ball Grid Array (BGA) semiconductor package with exposed base layer includes a base layer having an opening portion in the center thereof and formed with a plurality of holes about the opening portion. A plurality of leads are attached to a second surface of the base layer and each of the leads is connected to a corresponding hole in the base layer. A semiconductor chip is attached and electrically connected to the leads. The semiconductor chip and the leads are covered by an encapsulant formed by an encapsulating compound, leaving a first surface of the base layer exposed. A plurality of solder balls are planted in the holes in the base layer, which are electrically bonded to the leads so as to electrically connect the semiconductor chip to external devices. In this BGA semiconductor package, the leads together with the base layer are used as a substrate for the semiconductor chip to attach thereto. Therefore, there is no need of costly BGA substrate.

    摘要翻译: 具有暴露基层的球栅阵列(BGA)半导体封装包括在其中心具有开口部分并且围绕开口部分形成有多个孔的基层。 多个引线附接到基层的第二表面,并且每个引线连接到基层中的对应的孔。 半导体芯片被附接并电连接到引线。 半导体芯片和引线被由封装化合物形成的密封剂覆盖,留下基底层的第一表面露出。 多个焊球被种植在基底层的孔中,电焊接到引线上,以将半导体芯片电连接到外部装置。 在该BGA半导体封装中,将引线与基极层一起用作半导体芯片附着于其上的基板。 因此,不需要昂贵的BGA基板。

    Method of fabricating a ball grid array integrated circuit package having an encapsulating body
    6.
    发明授权
    Method of fabricating a ball grid array integrated circuit package having an encapsulating body 有权
    制造具有封装体的球栅阵列集成电路封装的方法

    公开(公告)号:US06306682B1

    公开(公告)日:2001-10-23

    申请号:US09547157

    申请日:2000-04-11

    IPC分类号: H01L2144

    摘要: A method of fabricating a BGA (Ball Grid Array) IC package of the type having an encapsulating body is proposed, which allows the BGA IC package to be manufactured without having to use conventional organic substrate and encapsulating-body mold having cavity, so that the manufacture process can be more cost-effective to carry out than the prior art. The proposed method is characterized in the use of a copper piece which is selectively removed to form an encapsulating-body cavity for the forming of an encapsulating body therein. The proposed method requires no use of mold with cavity for the forming of the encapsulating body, allowing the same mold to be used for the fabrication of various BGA IC packages of different sizes. Moreover, the proposed method allows fan-in design as well as fan-out design, thus allowing the number of I/O ports to be increased while making the overall package configuration compact in size, and also allows the implantation of the electrically-conductive balls to be easier to carry out and more precisely controlled than the prior art, making the ball implantation more assured in quality than the prior art. Therefore, the proposed method is more advantageous and cost-effective to use than the prior art.

    摘要翻译: 提出了一种制造具有封装体的BGA(球栅阵列)IC封装的方法,其允许制造BGA IC封装,而不必使用传统的有机衬底和具有空腔的封装体模具, 制造工艺比现有技术更具成本效益。 所提出的方法的特征在于使用铜片,其被选择性地去除以形成用于在其中形成封装体的封装体腔体。 所提出的方法不需要使用具有空腔的模具来形成封装体,允许相同的模具用于制造不同尺寸的各种BGA IC封装。 此外,所提出的方法允许风扇设计以及扇出式设计,从而允许增加I / O端口的数量,同时使整个封装结构的尺寸紧凑,并且还允许将导电 球比现有技术更容易实施和更精确地控制,使得球注入在质量上比现有技术更加确保。 因此,所提出的方法比现有技术更有利且成本有效。

    Circuit probing contact pad formed on a bond pad in a flip chip package
    8.
    发明授权
    Circuit probing contact pad formed on a bond pad in a flip chip package 有权
    电路探针接触焊盘,形成在倒装芯片封装中的接合焊盘上

    公开(公告)号:US06753609B2

    公开(公告)日:2004-06-22

    申请号:US09861425

    申请日:2001-05-18

    IPC分类号: H01L2348

    摘要: A method is proposed for forming circuit probing (CP) contact points on fine pitch peripheral bond pads (PBP) on a flip chip for the purpose of facilitating peripheral circuit probing of the internal circuitry of the flip chip. The proposed method is characterized in the forming of a dual-layer NiV/Cu metallization structure, rather than a triple-layer Al/NiV/Cu metallization structure, over each aluminum-based PBP, which includes a bottom layer of nickel-vanadium (NiV) deposited over the aluminum-based PBP and an upper layer of copper (Cu) deposited over the nickel-vanadium layer. When low-resolution photolithographic and etching equipment is used for photoresist mask definition for selective removal of the NiV/Cu metallization structure, the resulted photoresist masking can be misaligned to the PBP. However, since no aluminum layer is included in the metallization structure, a Cu/NiV specific etchant would only etch away the copper layer and the nickel-vanadium layer but not the aluminum-based PBP, thus leaving the unmasked portion of the aluminum-based PBP intact.

    摘要翻译: 提出了一种用于在倒装芯片上的细间距外围接合焊盘(PBP)上形成电路探测(CP)接触点的方法,其目的在于便于倒装芯片的内部电路的外围电路探测。 所提出的方法的特征在于在每个基于铝的PBP上形成双层NiV / Cu金属化结构而不是三层Al / NiV / Cu金属化结构,其包括镍 - 钒的底层( NiV)沉积在铝基PBP上并沉积在镍 - 钒层上的铜(Cu)上层。 当低分辨率光刻和蚀刻设备用于光刻胶掩模定义以选择性去除NiV / Cu金属化结构时,所得到的光刻胶掩模可能不对准PBP。 然而,由于在金属化结构中不包括铝层,所以Cu / NiV特定蚀刻剂将仅蚀刻掉铜层和镍 - 钒层而不是铝基PBP,从而留下铝基的未掩模部分 PBP完好无损。

    Method of forming solder areas over a lead frame
    9.
    发明授权
    Method of forming solder areas over a lead frame 失效
    在引线框架上形成焊料区域的方法

    公开(公告)号:US06391758B1

    公开(公告)日:2002-05-21

    申请号:US09525717

    申请日:2000-03-14

    IPC分类号: H01L2144

    摘要: A method is proposed for forming solder areas over a lead frame through deposition of an oxidation layer rather than selective removal of a polyimide-made solder mask, which allows the fabrication of the lead frame to be carried out in a more cost-effective and advantageous manner. The method allows the fabrication of the lead frame to be carried out through stamping without etching. Moreover, it can make the overall integrated circuit package less easily subjected to cracking and more securely assembled. Still moreover, it can make the overall integrated circuit package less likely to be weakened in structural strength by moisture. This method is therefore more advantageous to use than the prior art.

    摘要翻译: 提出了通过沉积氧化层在引线框架上形成焊料区域而不是选择性去除聚酰亚胺制造的焊接掩模的方法,其允许以更具成本效益和有利的方式进行引线框架的制造 方式。 该方法允许通过冲压而不刻蚀来进行引线框架的制造。 此外,它可以使整个集成电路封装不易受到破裂的影响,并且更安全地组装。 此外,还可以使整体集成电路封装在结构强度的水分下不太可能被削弱。 因此,该方法比现有技术更有利于使用。