公开(公告)号：US06537011B1

公开(公告)日：2003-03-25

申请号：US09629322

申请日：2000-07-31

申请人： Danny Wang ,  Dmitry Lubomirsky ,  Erwin Polar ,  Brigitte Stoehr ,  Mark Wiltse ,  Yeuk-Fai Edwin Mok ,  Frank C. Ma

发明人： Danny Wang ,  Dmitry Lubomirsky ,  Erwin Polar ,  Brigitte Stoehr ,  Mark Wiltse ,  Yeuk-Fai Edwin Mok ,  Frank C. Ma

IPC分类号： B65G4907

CPC分类号： H01L21/68707 ,  H01L21/68721 ,  H01L21/68785 ,  Y10S414/141

摘要： A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.

摘要翻译： 一种用于在半导体晶片处理系统中支撑和传送衬底的方法和装置。 在一个方面，公开了一种支撑环，其具有安装在其上的一个或多个基板支撑构件并且在处理期间限定用于接收基板支撑构件的中心开口。 在另一方面，提供一种其上设置有多个基板支撑件的基板处理器刀片，其适于在其上支撑基板并且实现基板处理器刀片和支撑环之间的基板传送。

公开(公告)号：US06466426B1

公开(公告)日：2002-10-15

申请号：US09366155

申请日：1999-08-03

申请人： Yeuk-Fai Edwin Mok ,  Dmitry Lubomirsky ,  Dennis Koosau ,  Danny Wang ,  Senh Thach ,  Paul Exline

发明人： Yeuk-Fai Edwin Mok ,  Dmitry Lubomirsky ,  Dennis Koosau ,  Danny Wang ,  Senh Thach ,  Paul Exline

IPC分类号： H01N1300

CPC分类号： H01L21/68785 ,  H01L21/67098 ,  Y10T279/23

摘要： A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.

摘要翻译： 更具体地说，一种具有衬底支撑件，隔离器以及用于在半导体晶片的直径上提供可控均匀的温度分布的第一和第二传热板的半导体衬底支撑座。 将放置在基座上的半导体晶片通过用嵌入在基板支撑体内的一个或多个电极加热晶片并以流过第一和第二传热板的流体冷却晶片来均匀地保持在预定温度。

公开(公告)号：US06869516B2

公开(公告)日：2005-03-22

申请号：US10273539

申请日：2002-10-18

申请人： Dmitry Lubomirsky ,  Michael X. Yang ,  Girish A. Dixit ,  Vincent E. Burkhart ,  Allen L. D'Ambra ,  Yeuk-Fai Edwin Mok ,  Harald Herchen

发明人： Dmitry Lubomirsky ,  Michael X. Yang ,  Girish A. Dixit ,  Vincent E. Burkhart ,  Allen L. D'Ambra ,  Yeuk-Fai Edwin Mok ,  Harald Herchen

IPC分类号： C25D7/12 ,  C25D21/00 ,  H01L21/288 ,  C25D5/48

CPC分类号： C25D7/12 ,  C25D21/00 ,  H01L21/2885

摘要： A method for cleaning the electrical contact areas or substrate contact areas of an electrochemical plating contact ring is provided. Embodiments of the method include positioning a substrate on a substrate support member having one or more electrical contacts, chemically plating a metal layer on at least a portion of a surface of the substrate, removing the processed substrate from the support member, and cleaning the one or more electrical contacts with a vapor mixture comprising an alcohol. In another aspect, the method includes spraying the vapor mixture on the electrical contacts while rotating the substrate support member.

摘要翻译： 提供了一种用于清洁电化学电镀接触环的电接触区域或衬底接触区域的方法。 该方法的实施例包括将基板定位在具有一个或多个电触点的基板支撑构件上，在基板表面的至少一部分上化学镀覆金属层，从处理基板移除经处理的基板，并清洁该基板 或更多的与包含醇的蒸汽混合物的电接触。 在另一方面，该方法包括在旋转衬底支撑构件的同时将蒸气混合物喷射到电触点上。

公开(公告)号：US06824612B2

公开(公告)日：2004-11-30

申请号：US10036321

申请日：2001-12-26

申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok ,  Girish Dixit

IPC分类号： B05C502

CPC分类号： H01L21/67167 ,  C23C18/1632 ,  C23C18/1692 ,  H01L21/6723

摘要： A method and apparatus for plating substrates, wherein the apparatus includes a central substrate transfer enclosure having at least one substrate transfer robot positioned therein. A substrate activation chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate plating chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. A substrate spin rinse dry chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot, and an annealing chamber in communication with the central substrate transfer enclosure is provided and is accessible to the at least one substrate transfer robot. At least one substrate pod loader in communication with the substrate transfer chamber and accessible to the at least one substrate transfer robot is also provided.

摘要翻译： 一种用于电镀基板的方法和装置，其中所述装置包括具有至少一个基板传送机器人的中央基板传送外壳。 提供与中心基板传送外壳连通的基板激活室，并且可由至少一个基板传送机器人访问。 提供与中心基板传送外壳连通的基板电镀室，并且可由至少一个基板传送机器人访问。 提供与中央基板传送外壳连通的基板旋转漂洗干燥室，并且可由至少一个基板传送机器人访问，并且提供与中央基板传送外壳连通的退火室，并且可由至少一个 基板传送机器人。 还提供了至少一个与基板传送室连通并且可由至少一个基板传送机器人访问的基板盒装载器。

公开(公告)号：US07223323B2

公开(公告)日：2007-05-29

申请号：US10616284

申请日：2003-07-08

申请人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

发明人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC分类号： C25B9/12 ,  C35D3/38 ,  B08B3/02

CPC分类号： H01L21/6719 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  B08B3/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：US07138014B2

公开(公告)日：2006-11-21

申请号：US10059572

申请日：2002-01-28

申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

IPC分类号： C23C14/00 ,  B05C11/00 ,  B05C3/00

CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

公开(公告)号：US10283321B2

公开(公告)日：2019-05-07

申请号：US13251714

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： H01J37/32

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

公开(公告)号：US20160035544A1

公开(公告)日：2016-02-04

申请号：US14614199

申请日：2015-02-04

申请人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

发明人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C16/52 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.

摘要翻译： 用独立的隔离加热器区域描述晶片载体。 在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器， 冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

公开(公告)号：US09068265B2

公开(公告)日：2015-06-30

申请号：US13363342

申请日：2012-01-31

申请人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

发明人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

IPC分类号： B05B5/00 ,  B05B1/14 ,  C23C16/509 ,  C23C16/455 ,  H01J37/32

CPC分类号： C23C16/5096 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

摘要翻译： 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

公开(公告)号：US08937800B2

公开(公告)日：2015-01-20

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

IPC分类号： H02N13/00 ,  H01L21/67

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。