-
公开(公告)号:US08334170B2
公开(公告)日:2012-12-18
申请号:US12163464
申请日:2008-06-27
申请人: Dean Wang , Chien-Hsiun Lee , Chen-Shien Chen , Clinton Chao , Mirng-Ji Lii , Tjandra Winata Karta
发明人: Dean Wang , Chien-Hsiun Lee , Chen-Shien Chen , Clinton Chao , Mirng-Ji Lii , Tjandra Winata Karta
IPC分类号: H01L23/498 , H01L21/56
CPC分类号: H01L23/49811 , H01L23/481 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/95 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16145 , H01L2224/27416 , H01L2224/27436 , H01L2224/27848 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/75744 , H01L2224/8121 , H01L2224/81815 , H01L2224/8321 , H01L2224/83856 , H01L2224/83862 , H01L2224/83986 , H01L2224/9205 , H01L2224/9211 , H01L2224/9221 , H01L2224/94 , H01L2224/95 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3512 , H01L2924/00014 , H01L2924/01014 , H01L2924/00
摘要: A method for fabricating a semiconductor device is provided which includes providing a first device, a second device, and a third device, providing a first coating material between the first device and the second device, the first coating material being uncured, providing a second coating material between the second device and the third device, the second coating material being uncured, and thereafter, curing the first and second coating materials in a same process.
摘要翻译: 提供了一种用于制造半导体器件的方法,其包括提供第一器件,第二器件和第三器件,在第一器件和第二器件之间提供第一涂层材料,第一涂层材料是未固化的,提供第二涂层 第二装置和第三装置之间的材料,第二涂料未固化,然后以相同的方法固化第一和第二涂料。
-
公开(公告)号:US20090321948A1
公开(公告)日:2009-12-31
申请号:US12163464
申请日:2008-06-27
申请人: Dean Wang , Chien-Hsiun Lee , Chen-Shien Chen , Clinton Chao , Mirng-Ji Lii , Tjandra Winata Karta
发明人: Dean Wang , Chien-Hsiun Lee , Chen-Shien Chen , Clinton Chao , Mirng-Ji Lii , Tjandra Winata Karta
IPC分类号: H01L23/498 , H01L21/56
CPC分类号: H01L23/49811 , H01L23/481 , H01L24/27 , H01L24/29 , H01L24/33 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/95 , H01L25/0657 , H01L25/50 , H01L2224/131 , H01L2224/16145 , H01L2224/27416 , H01L2224/27436 , H01L2224/27848 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/73204 , H01L2224/75744 , H01L2224/8121 , H01L2224/81815 , H01L2224/8321 , H01L2224/83856 , H01L2224/83862 , H01L2224/83986 , H01L2224/9205 , H01L2224/9211 , H01L2224/9221 , H01L2224/94 , H01L2224/95 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/1306 , H01L2924/13091 , H01L2924/1461 , H01L2924/181 , H01L2924/3512 , H01L2924/00014 , H01L2924/01014 , H01L2924/00
摘要: A method for fabricating a semiconductor device is provided which includes providing a first device, a second device, and a third device, providing a first coating material between the first device and the second device, the first coating material being uncured, providing a second coating material between the second device and the third device, the second coating material being uncured, and thereafter, curing the first and second coating materials in a same process.
摘要翻译: 提供了一种用于制造半导体器件的方法,其包括提供第一器件,第二器件和第三器件,在第一器件和第二器件之间提供第一涂层材料,第一涂层材料是未固化的,提供第二涂层 第二装置和第三装置之间的材料,第二涂料未固化,然后以相同的方法固化第一和第二涂料。
-
公开(公告)号:US07842548B2
公开(公告)日:2010-11-30
申请号:US12107504
申请日:2008-04-22
IPC分类号: H01L21/58
CPC分类号: H01L24/97 , H01L21/486 , H01L21/67184 , H01L21/67207 , H01L21/6835 , H01L23/147 , H01L23/49827 , H01L24/75 , H01L24/81 , H01L25/0655 , H01L2221/68331 , H01L2221/68381 , H01L2224/13316 , H01L2224/16235 , H01L2224/75744 , H01L2224/81005 , H01L2224/81193 , H01L2224/81815 , H01L2224/97 , H01L2924/01005 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/15311 , H01L2924/0105
摘要: A silicon-based wafer such as a TSV interposer wafer having a first and second surfaces wherein a glass carrier is mounted on the second surface by a UV tape is held by a vacuum holder applied on the first surface and the glass carrier is removed from the silicon-based wafer by irradiating the UV tape with a UV light through the glass carrier. The silicon-based wafer is then flipped and placed onto a vacuum plate and secured to the vacuum plate by applying vacuum to the vacuum plate. The vacuum holder is then released from the silicon-based wafer leaving the silicon-based wafer secured to the vacuum plate for subsequent processing steps.
摘要翻译: 具有第一表面和第二表面的硅基晶片,其中玻璃载体通过UV带安装在第二表面上,由施加在第一表面上的真空保持器保持,玻璃载体从 硅基晶片,通过紫外光照射UV带通过玻璃载体。 然后将硅基晶片翻转并放置在真空板上并通过向真空板施加真空而固定到真空板。 然后将真空保持器从硅基晶片释放,留下固定到真空板的硅基晶片用于随后的处理步骤。
-
公开(公告)号:US20090263214A1
公开(公告)日:2009-10-22
申请号:US12107504
申请日:2008-04-22
CPC分类号: H01L24/97 , H01L21/486 , H01L21/67184 , H01L21/67207 , H01L21/6835 , H01L23/147 , H01L23/49827 , H01L24/75 , H01L24/81 , H01L25/0655 , H01L2221/68331 , H01L2221/68381 , H01L2224/13316 , H01L2224/16235 , H01L2224/75744 , H01L2224/81005 , H01L2224/81193 , H01L2224/81815 , H01L2224/97 , H01L2924/01005 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/15311 , H01L2924/0105
摘要: A silicon-based wafer such as a TSV interposer wafer having a first and second surfaces wherein a glass carrier is mounted on the second surface by a UV tape is held by a vacuum holder applied on the first surface and the glass carrier is removed from the silicon-based wafer by irradiating the UV tape with a UV light through the glass carrier. The silicon-based wafer is then flipped and placed onto a vacuum plate and secured to the vacuum plate by applying vacuum to the vacuum plate. The vacuum holder is then released from the silicon-based wafer leaving the silicon-based wafer secured to the vacuum plate for subsequent processing steps.
摘要翻译: 具有第一表面和第二表面的硅基晶片,其中玻璃载体通过UV带安装在第二表面上,由施加在第一表面上的真空保持器保持,玻璃载体从 硅基晶片,通过紫外光照射UV带通过玻璃载体。 然后将硅基晶片翻转并放置在真空板上并通过向真空板施加真空而固定到真空板。 然后将真空保持器从硅基晶片释放,留下固定到真空板的硅基晶片用于随后的处理步骤。
-
公开(公告)号:US20100093135A1
公开(公告)日:2010-04-15
申请号:US12639058
申请日:2009-12-16
IPC分类号: H01L21/56
CPC分类号: H01L21/563 , H01L23/295 , H01L23/3128 , H01L2224/05022 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要: A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.
摘要翻译: 一种方法包括使用位于管芯和封装衬底或印刷电路板之间的多个焊料凸块将具有至少一个低k电介质层的集成电路管芯连接到封装衬底或印刷电路板。 低k电介质层的介电常数约为3.0或更小。 焊锡凸块的铅浓度约为5%以下。 在模具和封装衬底或印刷电路板之间形成分层的底部填充物。
-
公开(公告)号:US07656042B2
公开(公告)日:2010-02-02
申请号:US11393050
申请日:2006-03-29
IPC分类号: H01L23/48
CPC分类号: H01L21/563 , H01L23/295 , H01L23/3128 , H01L2224/05022 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要: A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.
摘要翻译: 一种方法包括使用位于管芯和封装衬底或印刷电路板之间的多个焊料凸块将具有至少一个低k电介质层的集成电路管芯连接到封装衬底或印刷电路板。 低k电介质层的介电常数约为3.0或更小。 焊锡凸块的铅浓度约为5%以下。 在模具和封装衬底或印刷电路板之间形成分层的底部填充物。
-
公开(公告)号:US07846769B2
公开(公告)日:2010-12-07
申请号:US12639058
申请日:2009-12-16
IPC分类号: H01L21/44
CPC分类号: H01L21/563 , H01L23/295 , H01L23/3128 , H01L2224/05022 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/01019 , H01L2924/01063 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/15311 , H01L2924/00 , H01L2924/00014
摘要: A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.
摘要翻译: 一种方法包括使用位于管芯和封装衬底或印刷电路板之间的多个焊料凸块将具有至少一个低k电介质层的集成电路管芯连接到封装衬底或印刷电路板。 低k电介质层的介电常数约为3.0或更小。 焊锡凸块的铅浓度约为5%以下。 在模具和封装衬底或印刷电路板之间形成分层的底部填充物。
-
公开(公告)号:US08049323B2
公开(公告)日:2011-11-01
申请号:US11675984
申请日:2007-02-16
申请人: Chen-Shien Chen , Chao-Hsiang Yang , Jimmy Liang , Han-Liang Tseng , Mirng-Ji Lii , Tjandra Winata Karta , Hua-Shu Wu
发明人: Chen-Shien Chen , Chao-Hsiang Yang , Jimmy Liang , Han-Liang Tseng , Mirng-Ji Lii , Tjandra Winata Karta , Hua-Shu Wu
IPC分类号: H01L23/498 , H01L21/60
CPC分类号: H01L23/5389 , H01L23/49816 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92244 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/09701 , H01L2924/15311 , H01L2924/19107
摘要: A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip.
摘要翻译: 由硅,玻璃,其它陶瓷或其它合适材料形成的芯片保持架包括用于保持半导体芯片的多个凹槽。 半导体芯片的接合焊盘形成在芯片保持器的围绕半导体芯片的区域上或上方,从而扩大接合面积。 使用半导体晶片处理技术将接合焊盘连接到直接形成在半导体芯片上的内部接合焊盘。
-
公开(公告)号:US20080197473A1
公开(公告)日:2008-08-21
申请号:US11675984
申请日:2007-02-16
申请人: Chen-Shien Chen , Chao-Hsiang Yang , Jimmy Liang , Han-Liang Tseng , Mirng-Ji Lii , Tjandra Winata Karta , Hua-Shu Wu
发明人: Chen-Shien Chen , Chao-Hsiang Yang , Jimmy Liang , Han-Liang Tseng , Mirng-Ji Lii , Tjandra Winata Karta , Hua-Shu Wu
IPC分类号: H01L23/498 , H01L21/60
CPC分类号: H01L23/5389 , H01L23/49816 , H01L24/19 , H01L2224/04105 , H01L2224/12105 , H01L2224/20 , H01L2224/92244 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01078 , H01L2924/09701 , H01L2924/15311 , H01L2924/19107
摘要: A chip holder formed of silicon, glass, other ceramics or other suitable materials includes a plurality of recesses for retaining semiconductor chips. The bond pads of the semiconductor chip are formed on or over an area of the chip holder that surrounds the semiconductor chip thus expanding the bonding area. The bond pads are coupled, using semiconductor wafer processing techniques, to internal bond pads formed directly on the semiconductor chip.
摘要翻译: 由硅,玻璃,其它陶瓷或其它合适材料形成的芯片保持架包括用于保持半导体芯片的多个凹槽。 半导体芯片的接合焊盘形成在芯片保持器的围绕半导体芯片的区域上或上方,从而扩大接合面积。 使用半导体晶片处理技术将接合焊盘连接到直接形成在半导体芯片上的内部接合焊盘。
-
10.
公开(公告)号:US09449941B2
公开(公告)日:2016-09-20
申请号:US13178161
申请日:2011-07-07
申请人: Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
发明人: Pei-Chun Tsai , Sheng-Yu Wu , Ching-Wen Hsiao , Tin-Hao Kuo , Chen-Shien Chen , Chung-Shi Liu , Chien-Hsiun Lee , Mirng-Ji Lii
IPC分类号: H01L29/00 , H01L23/00 , H01L25/065 , H01L25/18
CPC分类号: H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L2224/13082 , H01L2224/131 , H01L2224/13147 , H01L2224/16 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/73203 , H01L2224/73204 , H01L2224/73253 , H01L2225/06517 , H01L2225/06562 , H01L2924/00014 , H01L2924/1434 , H01L2924/15311 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/48
摘要: A package-on-package (PoP) comprises a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of bond-on-trace connections, and a second function chip on top of the first function chip, directly connected to the substrate. Another package-on-package (PoP) comprises: a substrate with a plurality of substrate traces, a first function chip on top of the substrate connected to the substrate by a plurality of solder mask defined (SMD) connections formed on SMD bonding pads connected to solder bumps, and a second function chip on top of the first function chip, directly connected to the substrate by a plurality of bond-on-trace connections.
摘要翻译: 封装封装(PoP)包括具有多个衬底迹线的衬底,通过多个贴合在轨迹连接与衬底连接的衬底顶部的第一功能芯片,以及顶部上的第二功能芯片 的第一功能芯片,直接连接到基板。 另一个封装封装(PoP)包括:具有多个衬底迹线的衬底,通过在连接的SMD焊盘上形成的多个焊接掩模限定(SMD)连接到衬底的顶部上的第一功能芯片 焊料凸点,以及位于第一功能芯片顶部的第二功能芯片,通过多个贴合在线跟踪连接直接连接到基板。
-
-
-
-
-
-
-
-
-