Process for bonding micromachined wafers using solder
    1.
    发明授权
    Process for bonding micromachined wafers using solder 失效
    使用焊料粘合微加工晶片的工艺

    公开(公告)号:US6062461A

    公开(公告)日:2000-05-16

    申请号:US116815

    申请日:1998-06-03

    IPC分类号: B81B7/00 H01L21/50

    CPC分类号: B81C1/00269

    摘要: A method by which semiconductor wafers (10, 12) can be solder bonded to form a semiconductor device, such as a sensor with a micromachined structure (14). The method entails forming a solderable ring (18) on the mating surface of a device wafer (10), such that the solderable ring (18) circumscribes the micromachine (14) on the wafer (10). A solderable layer (20, 26, 28) is formed on a capping wafer (12), such that at least the mating surface (24) of the capping wafer (12) is entirely covered by the solderable layer (20, 26, 28). The solderable layer (20, 26, 28) can be formed by etching the mating surface (24) of the capping wafer (12) to form a recess (16) circumscribed by the mating surface (24), and then forming the solderable layer (26) to cover the mating surface (24) and the recess (16) of the capping wafer (12). Alternatively, the solderable layer (28) can be formed by depositing a solderable material to cover the entire lower surface of the capping wafer (12), patterning the resulting solderable layer (28) to form an etch mask on the capping wafer (12), and then to form the recess (16), such that the solderable layer (28) covers the mating surface (24) but not the surfaces of the recess (16).

    摘要翻译: 可以将半导体晶片(10,12)焊接在一起以形成诸如具有微加工结构(14)的传感器的半导体器件的方法。 该方法需要在器件晶片(10)的配合表面上形成可焊接环(18),使得可焊接环(18)围绕晶片(10)上的微机械(14)。 在封盖晶片(12)上形成可焊层(20,26,28),使得封盖晶片(12)的至少配合表面(24)完全被可焊接层(20,26,28)覆盖 )。 可焊层(20,26,28)可以通过蚀刻封盖晶片(12)的配合表面(24)形成由配合表面(24)限定的凹陷(16),然后形成可焊层 (26)以覆盖封盖晶片(12)的配合表面(24)和凹部(16)。 或者,可焊层(28)可以通过沉积可焊接材料以覆盖封盖晶片(12)的整个下表面,形成所得到的可焊接层(28)以在封盖晶片(12)上形成蚀刻掩模 ,然后形成凹部(16),使得可焊层(28)覆盖配合表面(24),而不覆盖凹部(16)的表面。

    Fatigue-resistant lead-free alloy
    3.
    发明授权
    Fatigue-resistant lead-free alloy 失效
    耐疲劳无铅合金

    公开(公告)号:US5938862A

    公开(公告)日:1999-08-17

    申请号:US70070

    申请日:1998-04-03

    IPC分类号: B23K35/26 C22C13/00 C22C7/00

    CPC分类号: B23K35/262 C22C13/00

    摘要: A lead-free solder alloy suitable for forming solder joints of a surface-mount integrated circuit device, such as a flip chip. The solder alloy has a sufficiently low liquidus temperature to achieve desirable reflow properties at temperatures of 240.degree. C. and less, and is therefore compatible with integrated circuit processes. The solder alloy has a sufficiently high solidus temperature to ensure that solder joints formed with the alloy exhibit suitable mechanical properties at application temperatures up to 150.degree. C. when mounting a component to a laminate substrate. The solder alloy generally contains, in weight percent, about 7 to about 11% indium, about 2.5 to about 3.5% silver, and about 0.5 to about 1.5% copper, the balance tin and incidental impurities.

    摘要翻译: 适用于形成表面贴装集成电路器件如倒装芯片的焊点的无铅焊料合金。 焊料合金具有足够低的液相线温度,以在240℃以下的温度下实现期望的回流性能,因此与集成电路工艺兼容。 焊料合金具有足够高的固相线温度,以确保当将组件安装到层压基板上时,由合金形成的焊点在高达150℃的应用温度下表现出适当的机械性能。 焊料合金通常含有约7至约11%的铟,约2.5至约3.5%的银和约0.5至约1.5%的铜,余量为锡和附带的杂质。

    Lead-free solder alloy and solder reflow process
    8.
    发明授权
    Lead-free solder alloy and solder reflow process 有权
    无铅焊料合金和回流焊工艺

    公开(公告)号:US06767411B2

    公开(公告)日:2004-07-27

    申请号:US10099861

    申请日:2002-03-15

    IPC分类号: B23K35363

    CPC分类号: B23K35/262

    摘要: A lead-free solder alloy consisting essentially of, by weight, 3.0% to 3.5% silver, greater than 1% to about 15% copper, the balance tin and incidental impurities, and having an effective melting range of about 215° C. to about 222° C. The solder alloy is noneutectic, and therefore characterized by solidus and liquidus temperatures, the former being in a range of about 215° C. to about 218° C., while the latter is about 290° C. or more. However, the melting mechanism exhibited by the alloy is such that the alloy is substantially all melted and does not exhibit a “mushy zone” above the effective melting range, enabling the alloy to behave similarly to the SnAgCu eutectic alloy.

    摘要翻译: 一种无铅焊料合金,其基本上由重量比为3.0%至3.5%的银,大于1%至约15%的铜,余量为锡和附带杂质,并且具有约215℃的有效熔融范围, 约222℃。焊料合金是共晶的,因此以固相和液相线温度为特征,前者在约215℃至约218℃的范围内,而后者为约290℃或更高 。 然而,合金显示的熔融机理使得合金基本上全部熔化,并且在有效熔融范围之上不显示“糊状区域”,使合金的性能与SnAgCu共晶合金类似。

    Liquid metal rotary connector apparatus for a vehicle steering wheel and column
    10.
    发明授权
    Liquid metal rotary connector apparatus for a vehicle steering wheel and column 有权
    用于车辆方向盘和立柱的液体金属旋转连接器装置

    公开(公告)号:US07726972B1

    公开(公告)日:2010-06-01

    申请号:US12505088

    申请日:2009-07-17

    IPC分类号: H01R39/00

    摘要: A liquid metal rotary connector for a vehicle steering mechanism utilizes a conductive alloy comprising Gallium, Indium, Tin and Zinc to electrically couple stationary and rotary terminals of the connector. The alloy is a liquid at ambient temperatures, and has a melting point of −36° C., though testing has shown that it operates satisfactorily at temperatures as low as −40° C. In a preferred arrangement, the rotary connector provides a two-wire connection through which power is supplied from the steering column to the steering wheel, and electronic modules located in the steering column and the steering wheel support bi-directional data communication through voltage and current modulation of the supplied power.

    摘要翻译: 用于车辆转向机构的液体金属旋转连接器利用包括镓,铟,锡和锌的导电合金来电连接连接器的固定和旋转端子。 该合金在环境温度下为液体,熔点为-36℃,尽管测试表明它在低至-40℃的温度下令人满意地工作。在优选的布置中,旋转连接器提供两个 - 通过其从转向柱向方向盘供电的电线,并且位于转向柱和方向盘中的电子模块通过对所供电的电压和电流调制来支持双向数据通信。