公开(公告)号：US07291229B2

公开(公告)日：2007-11-06

申请号：US10659327

申请日：2003-09-11

申请人： Eiichi Ishii ,  Takumi Sone ,  Yukihiro Sato ,  Kei Demizu ,  Hideo Kakutani ,  Koichi Tanaka ,  Shinichi Tanaka ,  Noriyoshi Tsuji

发明人： Eiichi Ishii ,  Takumi Sone ,  Yukihiro Sato ,  Kei Demizu ,  Hideo Kakutani ,  Koichi Tanaka ,  Shinichi Tanaka ,  Noriyoshi Tsuji

IPC分类号： C23C8/20 ,  C23C8/36 ,  C22C14/00

CPC分类号： C23C8/36

摘要： A method of carburizing treatment is proposed in which if carburizing is carried out at a low temperature, carbon will not turn amorphose and deposit on the surface of a titanium metal but reliably penetrate into between metallic atoms. It is a method of surface treatment of a titanium metal comprising the steps of heating the titanium metal to a temperature of 400-690° C. in a cleaning gas atmosphere containing hydrogen gas, subjecting the surface of the titanium metal to cleaning by applying a DC voltage of 200-1500 V, and plasma carburizing in an atmosphere comprising a carburizing gas having an atomic weight ratio of hydrogen atoms (H) to carbon atoms (C) adjusted to 1≦H/C≦9 at a pressure of 13-400 Pa and a temperature of 400-690° C. Ionization reaction in the gas is suppressed suitably. Because there exists no excessive carbon which is not used for carburization but turns soot or glass-like carbon, in the atmosphere during carburization, carburizing reaction progresses smoothly.

摘要翻译： 提出了一种渗碳处理方法，其中如果在低温下进行渗碳，则碳不会变形并沉积在钛金属的表面上，而是可靠地渗入金属原子之间。 它是钛金属的表面处理方法，包括以下步骤：在含有氢气的清洁气体气氛中将钛金属加热到400-690℃的温度，通过施加钛金属来清洁钛金属表面 DC电压为200-1500V，并且在包含在氢气压力下调节至1 <= H / C <= 9的原子比为氢原子（H）与碳原子（C）的原子比的渗碳气体的气氛中的等离子体渗碳 13-400Pa，温度400-690℃。适当地抑制气体中的离子化反应。 由于不存在不用于渗碳而变成烟灰或玻璃状碳的过量碳，在渗碳时的气氛中，渗碳反应平稳进行。

公开(公告)号：US5466305A

公开(公告)日：1995-11-14

申请号：US307447

申请日：1994-09-21

申请人： Yukihiro Sato ,  Takumi Sone ,  Sachio Nagata ,  Tetsuhiro Sakata ,  Kei Demizu ,  Shinichi Tanaka

发明人： Yukihiro Sato ,  Takumi Sone ,  Sachio Nagata ,  Tetsuhiro Sakata ,  Kei Demizu ,  Shinichi Tanaka

IPC分类号： C23C8/36

CPC分类号： C23C8/36

摘要： The surface of titanium is treated to reduce the friction coefficient and wear loss without sacrificing its corrosion resistance. Pure titanium or titanium alloy is subjected to plasma-carburizing in an atmosphere containing hydrocarbon gas at a pressure of 0.5 to 15 Torr and a temperature of 700.degree. to 1100.degree. C.

摘要翻译： 处理钛的表面以降低摩擦系数和磨损损失而不牺牲其耐腐蚀性。 纯钛或钛合金在含有烃气体的气氛中在0.5-15乇的压力和700至1100℃的温度下进行等离子体渗碳。

公开(公告)号：US08367479B2

公开(公告)日：2013-02-05

申请号：US12718200

申请日：2010-03-05

申请人： Hiroyuki Nakamura ,  Akira Muto ,  Nobuya Koike ,  Atsushi Nishikizawa ,  Yukihiro Sato ,  Katsuhiko Funatsu

发明人： Hiroyuki Nakamura ,  Akira Muto ,  Nobuya Koike ,  Atsushi Nishikizawa ,  Yukihiro Sato ,  Katsuhiko Funatsu

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/495 ,  H01L21/4828 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/838 ,  H01L2224/85439 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/078 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/05599

摘要： To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.

公开(公告)号：US08351597B2

公开(公告)日：2013-01-08

申请号：US11860819

申请日：2007-09-25

申请人： Yukihiro Sato ,  Nobuhiro Mochizuki

发明人： Yukihiro Sato ,  Nobuhiro Mochizuki

IPC分类号： H04M1/00 ,  H04M9/00 ,  H04M9/08 ,  H03G3/00

CPC分类号： H04M9/082

摘要： The present invention relates to an electronic device that can output received voice and input transmitted voice at the same time and enhances a suppression function for echo due to the received voice sneaking into the transmitted voice. An electronic device (e.g., portable telephone terminal device) outputs the received voice from a voice output unit (speaker), inputs the transmitted voice through a voice input unit (microphone), and includes an echo canceller unit that subtracts a pseudo echo signal for the received voice from the transmitted voice to suppress an echo component in the transmitted voice and a controlling unit that changes an echo suppression amount of the echo canceller unit in accordance with the received voice volume.

摘要翻译： 本发明涉及一种可以同时输出接收的语音和输入发送的语音的电子设备，并且由于接收到的语音潜入到发送的语音中，增强了用于回声的抑制功能。 电子设备（例如，便携式电话终端设备）从语音输出单元（扬声器）输出接收的语音，通过语音输入单元（麦克风）输入发送的语音，并且包括回波消除器单元，其将 来自所发送的语音的接收到的语音以抑制所发送的语音中的回波分量;以及控制单元，其根据接收的语音音量来改变回声消除单元的回波抑制量。

公开(公告)号：US08232629B2

公开(公告)日：2012-07-31

申请号：US11841955

申请日：2007-08-20

申请人： Nobuya Koike ,  Atsushi Fujiki ,  Norio Kido ,  Yukihiro Sato ,  Hiroyuki Nakamura

发明人： Nobuya Koike ,  Atsushi Fujiki ,  Norio Kido ,  Yukihiro Sato ,  Hiroyuki Nakamura

IPC分类号： H01L23/495

CPC分类号： H01L21/565 ,  H01L23/49503 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/4847 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： It is made for the layout of the mounting wiring at the time of mounting to become efficient by changing the structure of a semiconductor device.A first chip is mounted on a first die pad, and a second chip is also mounted on a second die pad. A first die pad and a second die pad do division structure in parallel to the first side and second side of sealing body 40. As a result, the pin for an output from a first chip and the pin for control of the circuit for a drive can make it able to project from a counter direction, and can set the wiring layout at the time of mounting as the minimum route.

摘要翻译： 通过改变半导体器件的结构，安装时的安装布线的布局变得有效。 第一芯片安装在第一芯片焊盘上，第二芯片也安装在第二芯片焊盘上。 第一管芯焊盘和第二管芯焊盘与密封体40的第一侧面和第二侧平行地进行分割结构。结果，用于从第一芯片输出的引脚和用于控制驱动电路的引脚 可以使其能够从反方向投影，并可以将安装时的布线布局设置为最小路线。

公开(公告)号：US08113957B2

公开(公告)日：2012-02-14

申请号：US12066881

申请日：2006-11-08

申请人： Yukihiro Sato ,  Katsutoshi Yoshida ,  Masato Miyazaki

发明人： Yukihiro Sato ,  Katsutoshi Yoshida ,  Masato Miyazaki

IPC分类号： A63F9/24

CPC分类号： A63F13/493 ,  A63F13/12 ,  A63F13/332 ,  A63F13/35 ,  A63F13/42 ,  A63F2300/406 ,  A63F2300/50 ,  A63F2300/535 ,  A63F2300/5533 ,  A63F2300/554 ,  A63F2300/636 ,  A63F2300/64

摘要： A game system allowing a player corresponding to a terminal, from which communication has been cut, to restart the game from the game situation at the moment of communication cut. The server has a game continuation device for continuing the game except the error terminal in a case where the error terminal occurs, and a server restart device for transmitting situation information of each player after communication recovery as information for restart, and restarting the game by communication with only the error terminal. The error terminal comprises a terminal restart device for restarting the game after communication recovery based on the situation information included in the information for restart, and a virtual input operation device for functioning as a virtual player instead of players P corresponding to other terminal.

摘要翻译： 通信切断时允许与通信被切断的终端对应的玩家从游戏状态重新开始游戏的游戏系统。 服务器具有游戏继续装置，用于在发生错误终端的情况下继续游戏除了错误终端;以及服务器重启装置，用于在通信恢复之后发送每个玩家的状况信息，作为用于重启的信息，并且通过通信重新开始游戏 只有错误终端。 错误终端包括：终端重启装置，用于根据重新启动的信息中包含的情况信息重新启动通信恢复后的游戏;以及虚拟输入操作装置，用作虚拟播放器，而不是与其他终端对应的玩家P。

公开(公告)号：US08040708B2

公开(公告)日：2011-10-18

申请号：US12480112

申请日：2009-06-08

申请人： Yukihiro Sato ,  Tomoaki Uno

发明人： Yukihiro Sato ,  Tomoaki Uno

IPC分类号： H02M1/00

CPC分类号： H01L23/492 ,  H01L23/3107 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/05 ,  H01L24/33 ,  H01L24/34 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/91 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37599 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/85439 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/00012

摘要： The reliability of a semiconductor device is improved.A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die pad 7D2, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.

摘要翻译： 提高了半导体器件的可靠性。 半导体器件的封装在内部包括形成功率MOS•FET的第一半导体芯片和第二半导体芯片，以及形成控制第一和第二半导体芯片的控制电路的第三半导体芯片。 第一至第三半导体芯片分别安装在芯片焊盘上。 第一半导体芯片的高侧的源电极接合焊盘通过金属板与管芯焊盘的第一管芯焊盘电连接。 在芯片焊盘7D2的顶面设置有形成在安装有第二半导体芯片的区域中的镀层和形成在金属板接合的区域中的另一个镀层，并且将镀层彼此分离，并且用 在其间不形成镀层的区域。

公开(公告)号：US20110169102A1

公开(公告)日：2011-07-14

申请号：US13050313

申请日：2011-03-17

申请人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

发明人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

IPC分类号： H01L27/088

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/01039 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207

摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

摘要翻译： 提高了半导体器件的电气特性。 在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。 高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。 低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。 金属板包括与第二半导体芯片的焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分和从第一部分的长边延伸到第三部分的第三部分 引线。

公开(公告)号：US07932588B2

公开(公告)日：2011-04-26

申请号：US12695657

申请日：2010-01-28

申请人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

发明人： Tomoaki Uno ,  Nobuyoshi Matsuura ,  Yukihiro Sato ,  Keiichi Okawa ,  Tetsuya Kawashima ,  Kisho Ashida

IPC分类号： H01L23/02 ,  H01L31/111

CPC分类号： H01L23/50 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/91 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/01039 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/207

摘要： The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

摘要翻译： 提高了半导体器件的电气特性。 在半导体器件的封装中，存在其中形成有功率MOS-FET的封装的第一和第二半导体芯片，以及具有用于控制其中形成的工作的控制电路的第三半导体芯片。 高侧的第一半导体芯片的源极的接合焊盘通过金属板电连接到管芯焊盘。 低侧的第二半导体芯片的源电极接合焊盘通过金属板电连接到引线。 金属板包括与第二半导体芯片的接合焊盘接触的第一部分，从第一部分的短边延伸到引线布线的第二部分，以及从第一部分的长边延伸到第三部分的第三部分 引线。

公开(公告)号：US07393866B2

公开(公告)日：2008-07-01

申请号：US10985938

申请日：2004-11-09

申请人： Kimiyuki Shibuya ,  Toru Miura ,  Katsumi Kawamine ,  Yukihiro Sato ,  Tadaaki Ohgiya ,  Takahiro Kitamura ,  Chiyoka Ozaki ,  Toshiyuki Edano ,  Mitsuteru Hirata

发明人： Kimiyuki Shibuya ,  Toru Miura ,  Katsumi Kawamine ,  Yukihiro Sato ,  Tadaaki Ohgiya ,  Takahiro Kitamura ,  Chiyoka Ozaki ,  Toshiyuki Edano ,  Mitsuteru Hirata

IPC分类号： A61K31/4436 ,  C07D417/12

CPC分类号： C07D403/12 ,  A61K31/4439 ,  C07D401/12 ,  C07D413/12 ,  C07D417/12 ,  C07D513/04

摘要： The present invention provides to a novel compound having an ACAT inhibiting activity.The present invention relates to compounds represented by formula (I) wherein represents an optionally substituted divalent residue such as benzene, pyridine, cyclohexane or naphthalene, or a group, Het represents a 5- to 8-membered, substituted or unsubstituted heterocyclic group containing at least one heteroatom selected from the group consisting of a nitrogen atom, an oxygen atom and a sulfur atom, such as a monocyclic group, a polycyclic group or a group of a fused ring, X represents —NH—, an oxygen atom or a sulfur atom, Y represents —NR4—, an oxygen atom, a sulfur atom, a sulfoxide or a sulfone, Z represents a single bond or —NR5—, R4 represents a hydrogen atom, a lower alkyl group, an aryl group or an optionally substituted silyl lower alkyl group, R5 represents a hydrogen atom, a lower alkyl group, an aryl group or an optionally substituted silyl lower alkyl group, and n is an integer of from 1 to 15, or salts or solvates thereof, and a pharmaceutical composition containing at least one of these compounds.

摘要翻译： 本发明提供具有ACAT抑制活性的新型化合物。 本发明涉及由式（I）表示的化合物，其中表示任选取代的二价残基例如苯，吡啶，环己烷或萘，或者基团，Het表示5至8元，取代或未取代的杂环基， 至少一个选自氮原子，氧原子和硫原子的杂原子，如单环基团，多环基团或稠环基团，X表示-NH-，氧原子或硫原子 原子，Y表示-NR 4 - ，氧原子，硫原子，亚砜或砜，Z表示单键或-NR 5 - ， - R 4表示氢原子，低级烷基，芳基或任选取代的甲硅烷基低级烷基，R 5表示氢原子，低级烷基，芳基 基团或任选取代的甲硅烷基低级烷基，n为1至15的整数，或其盐或溶剂化物， d含有这些化合物中的至少一种的药物组合物。