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    Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
    1.
    发明授权
    Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system 有权
    焊接接头系统，焊接方法，半导体器件制造方法以及半导体器件制造系统

    公开(公告)号：US06732911B2

    公开(公告)日：2004-05-11

    申请号：US09970802

    申请日：2001-10-05

    申请人： Hirohisa Matsuki ,  Hiroyuki Matsui ,  Eiji Yoshida ,  Takao Ohno ,  Koki Otake ,  Akiyo Mizutani ,  Motoshu Miyajima ,  Masataka Mizukoshi ,  Eiji Watanabe

    发明人： Hirohisa Matsuki ,  Hiroyuki Matsui ,  Eiji Yoshida ,  Takao Ohno ,  Koki Otake ,  Akiyo Mizutani ,  Motoshu Miyajima ,  Masataka Mizukoshi ,  Eiji Watanabe

    IPC分类号： B23K3538

    CPC分类号： B23K1/008 ,  B23K2101/36 ,  H05K3/3489

    摘要： There is provided a chamber open to the outside through openings through which a solder-adhered object is passed and the chamber having a heating/melting area, a carrying mechanism for carrying the solder-adhered object into the heating/melting area, a formic-acid supplying means for supplying a formic acid into the heating/melting area, an exhausting means for exhausting a gas from the heating/melting area and its neighboring area to create a lower pressure area in the heating/melting area as compared to the pressure of outside the chamber, heating means for heating directly or indirectly the solder-adhered object in the heating/melting area, and an air-stream suppressing means for disturbing a gas flow between the heating/melting area and the carrying areas. Accordingly, there can be provided a solder jointing system for jointing solder layers of a semiconductor device, an electronic device, or the like to the wirings or the pads, which is capable of having a high processing ability and preventing re-oxidation.

    摘要翻译： 设置有通过开口穿过焊料粘附物体的开口的室，并且具有加热/熔化区域的室，用于将焊料粘附物携带到加热/熔融区域中的承载机构， 用于将甲酸供应到加热/熔化区域的酸供应装置，用于从加热/熔化区域及其相邻区域排出气体的排气装置，以在加热/熔化区域中产生较低压力区域， 在室外，用于在加热/熔化区域中直接或间接加热焊接物体的加热装置，以及用于扰乱加热/熔化区域和承载区域之间的气流的气流抑制装置。 因此，可以提供一种用于将半导体器件，电子器件等的焊料层接合到布线或焊盘上的焊接接合系统，其能够具有高处理能力并防止再氧化。

    Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor
    9.
    发明授权
    Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor 有权
    半导体器件的制造方法和动态阈值晶体管的制造方法

    公开(公告)号：US08709898B2

    公开(公告)日：2014-04-29

    申请号：US13552274

    申请日：2012-07-18

    申请人： Masahiro Fukuda ,  Eiji Yoshida ,  Yosuke Shimamune

    发明人： Masahiro Fukuda ,  Eiji Yoshida ,  Yosuke Shimamune

    IPC分类号： H01L21/762 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78

    CPC分类号： H01L29/66477 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/1207 ,  H01L29/0653 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/783 ,  H01L29/7848

    摘要： A method includes: etching a silicon substrate except for a silicon substrate portion on which a channel region is to be formed to form first and second trenches respectively at a first side and a second side of the silicon substrate portion; filling the first and second trenches by epitaxially growing a semiconductor layer having etching selectivity against silicon and further a silicon layer; removing the semiconductor layer selectivity by a selective etching process to form voids underneath the silicon layer respectively at the first side and the second side of the substrate portion; burying the voids at least partially with a buried insulation film; forming a gate insulation film and a gate electrode on the silicon substrate portion; and forming a source region in the silicon layer at the first side of the silicon substrate portion and a drain region at the second side of the silicon substrate portion.

    摘要翻译： 一种方法包括：除硅衬底部分之外，蚀刻硅衬底，在其上形成沟道区以在硅衬底部分的第一侧和第二侧分别形成第一和第二沟槽; 通过外延生长具有对硅蚀刻选择性的半导体层和另外的硅层来填充第一和第二沟槽; 通过选择性蚀刻工艺去除半导体层选择性，以在衬底部分的第一侧和第二侧分别在硅层下形成空隙; 至少部分地用掩埋绝缘膜掩埋空隙; 在所述硅衬底部分上形成栅极绝缘膜和栅电极; 以及在所述硅衬底部分的第一侧的所述硅层中形成源极区域以及在所述硅衬底部分的第二侧处形成漏极区域。

    FREQUENCY OFFSET ESTIMATING METHOD AND FREQUENCY OFFSET ESTIMATING APPARATUS
    10.
    发明申请
    FREQUENCY OFFSET ESTIMATING METHOD AND FREQUENCY OFFSET ESTIMATING APPARATUS 有权
    频率偏移估计方法和频率偏移估计装置

    公开(公告)号：US20130028595A1

    公开(公告)日：2013-01-31

    申请号：US13640114

    申请日：2011-04-14

    申请人： Tadao Nakagawa ,  Yasushi Takatori ,  Riichi Kudo ,  Munehiro Matsui ,  Koichi Ishihara ,  Takayuki Kobayashi ,  Etsushi Yamazaki ,  Akihide Sano ,  Eiji Yoshida ,  Masato Mizoguchi ,  Yutaka Miyamoto

    发明人： Tadao Nakagawa ,  Yasushi Takatori ,  Riichi Kudo ,  Munehiro Matsui ,  Koichi Ishihara ,  Takayuki Kobayashi ,  Etsushi Yamazaki ,  Akihide Sano ,  Eiji Yoshida ,  Masato Mizoguchi ,  Yutaka Miyamoto

    IPC分类号： H04B10/08

    CPC分类号： H04L27/2657 ,  H04L27/2676 ,  H04L27/2684

    摘要： When a circuit that calculates a frequency offset using a shape of a frequency spectrum is implemented by hardware, the circuit size can be reduced. A frequency offset estimating method for estimating the difference between a carrier frequency of a reception signal and the frequency of an output signal of a local oscillator includes performing a discrete Fourier transform on a reception signal previously sampled at a predetermined sampling frequency and outputting a frequency spectrum with a plurality of frequency components, calculating an average power of the frequency spectrum, calculating a threshold by adding a predetermined value to the average power or power obtained by multiplying the average power by a constant, performing 1-bit quantization on powers of the frequency components of the frequency spectrum based on the threshold, and calculating a centroid frequency by multiplying frequencies of the frequency components by powers of 1-bit quantized frequency components, calculating the sum of multiplied products, and dividing the sum of the products by the sum of the powers of the 1-bit quantized frequency components of the frequency spectrum.

    摘要翻译： 当使用频谱的形状计算频率偏移的电路由硬件实现时，可以减小电路尺寸。 用于估计接收信号的载波频率与本地振荡器的输出信号的频率之间的差异的频率偏移估计方法包括对以预定采样频率预先采样的接收信号执行离散付里叶变换，并输出频谱 具有多个频率分量，计算频谱的平均功率，通过将平均功率或平均功率乘以常数获得的功率相加预定值来计算阈值，对频率的功率执行1比特量化 基于阈值的频谱的分量，并且通过将频率分量的频率乘以1比特量化频率分量的幂来计算质心频率，计算乘积的总和，并将乘积的和除以 1位量化频率分量的功率 频谱。