利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

32 条记录 (耗时 0.019 秒)

    Semiconductor laser diode
    3.
    发明授权
    Semiconductor laser diode 有权
    半导体激光二极管

    公开(公告)号：US07542498B2

    公开(公告)日：2009-06-02

    申请号：US11195792

    申请日：2005-08-03

    申请人： Etsuko Nomoto ,  Tsukuru Ohtoshi

    发明人： Etsuko Nomoto ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.

    摘要翻译： 一种半导体激光器件，其能够以高功率工作，并且具有能够同时抑制扭结，减少损耗和稳定偏振方向的结构，并且其中光学图案随着从有源层退出而单调减小，并且晶体组成可以 易于控制。 引入组成不同于包覆层的多个高折射率层，其分散在比用于引导光更靠近半导体激光器的下包层并稳定偏振方向的光斑尺寸的范围内。 随着从光学图案的有源层退出，电场强度单调减小。

    SEMICONDUCTOR LASERS
    4.
    发明申请
    SEMICONDUCTOR LASERS 审中-公开
    半导体激光器

    公开(公告)号：US20100111126A1

    公开(公告)日：2010-05-06

    申请号：US12608346

    申请日：2009-10-29

    申请人： Junichiro Shimizu ,  Etsuko Nomoto ,  Shinichi Nakatsuka ,  Tsukuru Ohtoshi ,  Takafumi Taniguchi

    发明人： Junichiro Shimizu ,  Etsuko Nomoto ,  Shinichi Nakatsuka ,  Tsukuru Ohtoshi ,  Takafumi Taniguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18 ,  H01S5/028 ,  H01S5/162 ,  H01S5/20 ,  H01S5/3211 ,  H01S2301/173 ,  H01S2301/176

    摘要： In a horizontal-cavity vertical-emitting semiconductor laser including an Al-containing semiconductor layer, deterioration of light output property due to oxidization of the Al-containing semiconductor layer is suppressed. A lower cladding layer, an active layer, and an upper cladding layer are stacked in this order from the lower layer on a main surface of a substrate made of GaAs. The upper cladding layer is made of AlGaAs or AlGaInP containing Al in high concentration. An emitting plane layer combining a function of preventing the oxidization of Al contained in the upper cladding layer is formed on an upper portion of the upper cladding layer, and an electric contact layer is formed on an upper portion of the emitting plane layer. The emitting plane layer is made of InGaP, and the electric contact layer is made of GaAs.

    摘要翻译： 在包含含Al半导体层的水平腔垂直发射半导体激光器中，抑制了由于含Al半导体层的氧化引起的光输出特性的劣化。 从GaAs的衬底的主表面上的下层依次堆叠下包层，有源层和上覆层。 上覆层由含有高浓度Al的AlGaAs或AlGaInP构成。 在上部包层的上部形成有结合防止上部包层中的Al的氧化的功能的发光面层，在发光面层的上部形成有电接触层。 发光平面层由InGaP制成，电接触层由GaAs制成。

    Semiconductor laser diode
    5.
    发明申请
    Semiconductor laser diode 有权

    公开(公告)号：US20060187987A1

    公开(公告)日：2006-08-24

    申请号：US11195792

    申请日：2005-08-03

    申请人： Etsuko Nomoto ,  Tsukuru Ohtoshi

    发明人： Etsuko Nomoto ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/20 ,  H01S5/00

    CPC分类号： H01S5/20

    摘要： A semiconductor laser device that can be operated at high power and that has a structure which can suppress kink, reduce loss and stabilize the direction of polarization simultaneously, and in which an optical pattern decreases monotonously as receding from an active layer and the crystal composition can be easily controlled. A plurality of layers of high refractive index different in the composition from that of the cladding layer are introduced being dispersed over a range wider than the spot size for directing light closer to the lower cladding layer of the semiconductor laser and stabilizing the direction of polarization. The electric field intensity is decreased monotonously as receding from the active layer for the optical pattern.

    Burying type avalanche photodiode and fabrication method thereof
    7.
    发明授权
    Burying type avalanche photodiode and fabrication method thereof 有权
    埋地型雪崩光电二极管及其制造方法

    公开(公告)号：US06635908B2

    公开(公告)日：2003-10-21

    申请号：US09942737

    申请日：2001-08-31

    申请人： Shigehisa Tanaka ,  Yasunobu Matsuoka ,  Kazuhiro Ito ,  Tomohiro Ohno ,  Sumiko Fujisaki ,  Akira Taike ,  Tsukuru Ohtoshi ,  Shinji Tsuji

    发明人： Shigehisa Tanaka ,  Yasunobu Matsuoka ,  Kazuhiro Ito ,  Tomohiro Ohno ,  Sumiko Fujisaki ,  Akira Taike ,  Tsukuru Ohtoshi ,  Shinji Tsuji

    IPC分类号： H01L310328

    CPC分类号： H01L31/1075 ,  H01L31/02161 ,  H01L31/035281 ,  Y02E10/50

    摘要： The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving the object has an absorption layer for absorbing light to generate a carrier, a multiplication layer for multiplying the generated carrier, and a field control layer inserted between the absorption layer and the multiplication layer. Moreover, a first mesa including at least part of the multiplication layer and part of the field control layer is formed over a substrate, a second mesa including another part of the field control layer and the absorption layer is formed over the first mesa, the area of the top surface of the first mesa is greater than that of the bottom surface of the second mesa, and a semiconductor layer is formed over the part of the first mesa top surface not covered by the second mesa and the side surface of the second mesa.

    摘要翻译： 公开新技术的目的在于提供一种使用能够保持暗电流低的新型结构的高度可靠的台面结构的雪崩光电二极管及其制造方法。 用于实现物体的雪崩光电二极管具有用于吸收光以产生载流子的吸收层，用于乘以所生成的载流子的乘法层和插入在吸收层和乘法层之间的场控制层。此外，第一台面 包括倍增层的至少一部分和场控制层的一部分形成在衬底上，包括场控制层的另一部分的第二台面和吸收层形成在第一台面上，顶表面的面积 第一台面大于第二台面的底面的第一台面，并且半导体层形成在第一台面顶面的未被第二台面和第二台面的侧面覆盖的部分上。

    Semiconductor laser device
    10.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4563764A

    公开(公告)日：1986-01-07

    申请号：US531710

    申请日：1983-09-13

    申请人： Takao Kuroda ,  Takashi Kajimura ,  Yasutoshi Kashiwada ,  Naoki Chinone ,  Hirobumi Ouchi ,  Tsukuru Ohtoshi

    发明人： Takao Kuroda ,  Takashi Kajimura ,  Yasutoshi Kashiwada ,  Naoki Chinone ,  Hirobumi Ouchi ,  Tsukuru Ohtoshi

    IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/2232 ,  H01S5/2234

    摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.

    摘要翻译： 公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层 所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系 相对于激光的总光输出的层设置为NDx GAMMA n> = 500。 噪声特性大幅提高。