公开(公告)号：US06833572B2

公开(公告)日：2004-12-21

申请号：US10229603

申请日：2002-08-27

申请人： Fengyan Zhang ,  Tingkai Li ,  Hong Ying ,  Yoshi Ono ,  Sheng Teng Hsu

发明人： Fengyan Zhang ,  Tingkai Li ,  Hong Ying ,  Yoshi Ono ,  Sheng Teng Hsu

IPC分类号： H01L2976

CPC分类号： H01L28/75 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/55

摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.

摘要翻译： 用于铁电体器件的电极包括底部电极; 铁电层 以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。 在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

公开(公告)号：US06759252B2

公开(公告)日：2004-07-06

申请号：US10621850

申请日：2003-07-16

申请人： Fengyan Zhang ,  Sheng Teng Hsu ,  Hong Ying

发明人： Fengyan Zhang ,  Sheng Teng Hsu ,  Hong Ying

IPC分类号： H01L2102

CPC分类号： H01L28/55 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/67086 ,  H01L41/0533

摘要： A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.

摘要翻译： 钝化层包括用于钝化铁电材料例如Pt / SBt / Ir-Ta-O器件的钛掺杂氧化铝层。 用于钝化铁电材料的钛掺杂氧化铝层具有减少的应力和改善的钝化性能，并且易于沉积并被氧化。 MFM结构中的钝化层在形成气体环境中抵抗器件退火过程中的击穿和剥离。

公开(公告)号：US06630702B2

公开(公告)日：2003-10-07

申请号：US09819546

申请日：2001-03-27

申请人： Fengyan Zhang ,  Sheng Teng Hsu ,  Hong Ying

发明人： Fengyan Zhang ,  Sheng Teng Hsu ,  Hong Ying

IPC分类号： H01L27108

CPC分类号： H01L28/55 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/3162 ,  H01L21/67086 ,  H01L41/0533

摘要： A passivation layer comprises a titanium-doped aluminum oxide layer for passivation of ferroelectric materials such as Pt/SBt/Ir—Ta—O devices. The titanium-doped aluminum oxide layer for passivation of ferroelectric materials has reduced stress and improved passivation properties, and is easy to deposit and be oxidized. The passivation layer in the MFM Structure resists breakdown and peeling during annealing of the device in a forming gas ambient.

公开(公告)号：US06541385B2

公开(公告)日：2003-04-01

申请号：US09855393

申请日：2001-05-14

申请人： Hong Ying ,  Fengyan Zhang ,  Jer-Shen Maa ,  Sheng Teng Hsu

发明人： Hong Ying ,  Fengyan Zhang ,  Jer-Shen Maa ,  Sheng Teng Hsu

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C04B2111/00844 ,  H01L21/32136 ,  H01L28/60 ,  C04B35/495

摘要： A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a substrate structure; patterning the layer of electrode material to form electrode elements, wherein said patterning includes plasma etching the layer of electrode material in a plasma reactor in an etching gas atmosphere having a fluorine component therein; and cleaning the substrate structure and electrode elements in a distilled water bath.

公开(公告)号：US06440752B1

公开(公告)日：2002-08-27

申请号：US09817712

申请日：2001-03-26

申请人： Fengyan Zhang ,  Tingkai Li ,  Hong Ying ,  Yoshi Ono ,  Sheng Teng Hsu

发明人： Fengyan Zhang ,  Tingkai Li ,  Hong Ying ,  Yoshi Ono ,  Sheng Teng Hsu

IPC分类号： H01G706

CPC分类号： H01L28/75 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/55

摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.

摘要翻译： 用于铁电体器件的电极包括底部电极; 铁电层; 以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。 在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

公开(公告)号：US06555874B1

公开(公告)日：2003-04-29

申请号：US09649380

申请日：2000-08-28

申请人： Sheng Teng Hsu ,  Douglas James Tweet ,  Bruce Dale Ulrich ,  Hong Ying

发明人： Sheng Teng Hsu ,  Douglas James Tweet ,  Bruce Dale Ulrich ,  Hong Ying

IPC分类号： H01L310392

CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/7378

摘要： A semiconductor structure includes, on a SOI substrate, a CMOS formed on the substrate; and a SiGe HBT formed on the substrate. A method of fabricating a semiconductor structure includes preparing a SOI substrate having plural active regions thereon; forming a CMOS on the SOI substrate in a first active region; and forming a SiGe HBT on the SOI substrate in another active region.

摘要翻译： 半导体结构在SOI衬底上包括在衬底上形成的CMOS; 和形成在衬底上的SiGe HBT。 制造半导体结构的方法包括制备其上具有多个有源区的SOI衬底; 在第一有源区中在SOI衬底上形成CMOS; 以及在另一有源区的SOI衬底上形成SiGe HBT。

公开(公告)号：US06716645B2

公开(公告)日：2004-04-06

申请号：US10319314

申请日：2002-12-12

申请人： Tingkai Li ,  Sheng Teng Hsu ,  Hong Ying ,  Bruce D. Ulrich ,  Yanjun Ma

发明人： Tingkai Li ,  Sheng Teng Hsu ,  Hong Ying ,  Bruce D. Ulrich ,  Yanjun Ma

IPC分类号： H01L2100

CPC分类号： H01L21/28291 ,  H01L29/516 ,  H01L29/78391

摘要： A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.

摘要翻译： 用于铁电非易失性存储器件的MFMOS单晶体管存储器结构包括诸如ZrO 2，HfO 2，Y 2 O 3或La 2 O 3等的高介电常数材料或其混合物，以减少操作电压并增加存储窗口， 设备的可靠性。

公开(公告)号：US06503763B2

公开(公告)日：2003-01-07

申请号：US09819879

申请日：2001-03-27

申请人： Tingkai Li ,  Sheng Teng Hsu ,  Hong Ying ,  Bruce D. Ulrich ,  Yanjun Ma

发明人： Tingkai Li ,  Sheng Teng Hsu ,  Hong Ying ,  Bruce D. Ulrich ,  Yanjun Ma

IPC分类号： H01L2100

CPC分类号： H01L21/28291 ,  H01L29/516 ,  H01L29/78391

摘要： A MFMOS one transistor memory structure for ferroelectric non-volatile memory devices includes a high dielectric constant material such as ZrO2, HfO2, Y2O3, or La2O3, or the like, or mixtures thereof, to reduce the operation voltage and to increase the memory window and reliability of the device.

摘要翻译： 用于铁电非易失性存储器件的MFMOS单晶体管存储器结构包括诸如ZrO 2，HfO 2，Y 2 O 3或La 2 O 3等的高介电常数材料或其混合物，以减少操作电压并增加存储窗口， 设备的可靠性。

公开(公告)号：US20070114667A1

公开(公告)日：2007-05-24

申请号：US11283219

申请日：2005-11-18

申请人： Hemanshu Bhatt ,  Dilip Vijay ,  Jayanthi Pallinti ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao

发明人： Hemanshu Bhatt ,  Dilip Vijay ,  Jayanthi Pallinti ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao

IPC分类号： H01L23/52

CPC分类号： H05K1/0271 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05009 ,  H01L2224/05073 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/351 ,  H05K3/107 ,  Y10T428/12396 ,  H01L2924/00014 ,  H01L2924/00

摘要： Passivation integration schemes and pad structures to reduce the stress gradients and/or improve the contact surface existing between the Al in the pad and the gold wire bond. One of the pad structures provides a plurality of recessed pad areas which are formed in a single aluminum pad. An oxide mesa can be provided under the aluminum pad. Another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a copper pad and a plurality of trench/via pads. Still another pad structure provides a single recessed pad area which is formed in a single aluminum pad, and the aluminum pad is disposed above a portion of a copper pad, such that the aluminum pad and the copper pad are staggered relative to each other.

摘要翻译： 钝化整合方案和焊盘结构以减少应力梯度和/或改善焊盘中的Al和金线键之间存在的接触表面。 垫结构之一提供了形成在单个铝垫中的多个凹陷区域。 可以在铝垫下方设置氧化物台面。 另一个垫结构提供形成在单个铝垫中的单个凹陷区域，并且铝垫设置在铜焊盘和多个沟槽/通孔焊盘之上。 另一个衬垫结构提供形成在单个铝垫中的单个凹陷区域，并且铝垫设置在铜垫的一部分上方，使得铝垫和铜垫相对于彼此交错。

公开(公告)号：US07531442B2

公开(公告)日：2009-05-12

申请号：US11290087

申请日：2005-11-30

申请人： Jayanthi Pallinti ,  Dilip Vijay ,  Hemanshu Bhatt ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao ,  Peter Burke ,  Ramaswamy Ranganathan ,  Qwai Low

发明人： Jayanthi Pallinti ,  Dilip Vijay ,  Hemanshu Bhatt ,  Sey-Shing Sun ,  Hong Ying ,  Chiyi Kao ,  Peter Burke ,  Ramaswamy Ranganathan ,  Qwai Low

IPC分类号： H01L21/44

CPC分类号： H01L21/76801 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00

摘要： Different ways to reduce or eliminate the IMC cracking issues in wire bonded parts, including: changing to more compressive dielectric films for top, R1, and R2; changing the top passivation film stacks to more compressive films; changing the low k film to a higher compressive film; reducing the R layer thickness and pattern density to reduce tensile stress; and minimizing anneal and dielectric deposition temperatures. Each of the methods can be used individually or in combination with each other to reduce overall tensile stresses in the Cu/low-k wafer thus reducing or eliminating the IMC cracking issue currently seen in the post wire bonded parts.

摘要翻译： 减少或消除电线接合部件中IMC裂纹问题的不同方式，包括：更换为顶部，R1和R2的更多压电绝缘膜; 将顶部钝化膜堆叠更改为更多的压缩膜; 将低k膜改为较高的压缩膜; 降低R层厚度和图案密度以降低拉伸应力; 并最小化退火和介电沉积温度。 每个方法可以单独使用或彼此组合使用以减少Cu / low-k晶片中的总拉伸应力，从而减少或消除了现在在后引线接合部件中看到的IMC裂纹问题。