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16 条记录 (耗时 0.027 秒)

    Amorphous dielectric capacitors on silicon
    5.
    发明授权
    Amorphous dielectric capacitors on silicon 失效
    硅上无定形介质电容器

    公开(公告)号：US06255122B1

    公开(公告)日：2001-07-03

    申请号：US09300185

    申请日：1999-04-27

    申请人： Peter Richard Duncombe ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

    发明人： Peter Richard Duncombe ,  Robert Benjamin Laibowitz ,  Deborah Ann Neumayer ,  Thomas McCarroll Shaw

    IPC分类号： H01L2100

    CPC分类号： H01L28/55

    摘要： High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

    摘要翻译： 具有中等高介电常数的大容量电容器和栅极绝缘体，具有惊人的低泄漏性，使用包括钛酸钡系钛酸钡，钛酸锶钡，钛酸钡锶（BST），钛酸铅，铅的钛酸盐体系材料的钙钛矿型氧化物的非晶或低温膜 钛酸镧锆钛酸铅，钛酸镧钛酸镧，铌酸盐，铝酸盐或钽酸盐体系材料，如铌酸铅镁，铌酸锂锂钽酸锂，铌酸钾和铌酸钾钾，钨 - 青铜系材料如铌酸锶钡， 铅铌酸钡，铌酸钡钡和Bi-层状钙钛矿系材料如钽酸锶铋钛酸铋直接沉积在硅表面上，温度约450℃或更低。

    Lead silicate based capacitor structures
    6.
    发明授权
    Lead silicate based capacitor structures 失效
    硅酸铅基电容器结构

    公开(公告)号：US06211543B1

    公开(公告)日：2001-04-03

    申请号：US09543637

    申请日：2000-04-06

    申请人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    发明人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    IPC分类号： H01L2976

    CPC分类号： H01L28/55 ,  H01G4/10 ,  H01G4/129 ,  H01L21/31691

    摘要： A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may form the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.

    摘要翻译： 描述了一种电容器和制造方法，其包括半导体衬底，形成在衬底上或衬底中的底部电极，钡或硅酸铅的电介质层和顶部电极。 钡或硅酸铅和高介电常数材料如钡或钛酸铅的三明治电介质可形成电介质。 硅酸盐层可以通过蒸发和扩散，离子注入或电镀和扩散钡或铅而形成。 高ε介电常数材料可以通过溶胶凝胶沉积，金属有机化学气相沉积或溅射形成。 本发明克服了底部电极和电介质层的问题，化学相互作用以形成串联或低于所需电介质层的氧化硅层。

    Lead silicate based capacitor structures
    7.
    发明授权
    Lead silicate based capacitor structures 失效
    硅酸铅基电容器结构

    公开(公告)号：US6090659A

    公开(公告)日：2000-07-18

    申请号：US314409

    申请日：1999-05-19

    申请人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    发明人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

    CPC分类号： H01L28/55 ,  H01G4/10 ,  H01G4/129 ,  H01L21/31691

    摘要： A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may comprise the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.

    摘要翻译： 描述了一种电容器和制造方法，其包括半导体衬底，形成在衬底上或衬底中的底部电极，钡或硅酸铅的电介质层和顶部电极。 钡或硅酸铅和诸如钡或钛酸铅的高介电常数材料的夹层电介质可以包括电介质。 硅酸盐层可以通过蒸发和扩散，离子注入或电镀和扩散钡或铅而形成。 高ε介电常数材料可以通过溶胶凝胶沉积，金属有机化学气相沉积或溅射形成。 本发明克服了底部电极和电介质层的问题，化学相互作用以形成串联或低于所需电介质层的氧化硅层。

    Tailored insulator properties for devices
    8.
    发明授权
    Tailored insulator properties for devices 有权
    定制绝缘子性能的设备

    公开(公告)号：US06717199B2

    公开(公告)日：2004-04-06

    申请号：US10408069

    申请日：2003-04-04

    申请人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

    发明人： Robert Benjamin Laibowitz ,  John David Baniecki ,  Johannes Georg Bednorz ,  Jean-Pierre A. Locquet

    IPC分类号： H01L2976

    CPC分类号： H01L21/02356 ,  H01L21/02197 ,  H01L21/02351 ,  H01L21/265 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/31155 ,  H01L21/31691 ,  H01L27/1085 ,  H01L29/517

    摘要： A method for tailoring properties of high k thin layer perovskite materials, and devices comprising such insulators are herein presented. The method comprise the steps of, first, substantially completing the manufacture of a device, which device contains the high k insulator in a polycrystalline form. The device, such as a capacitor, or an FET, went through the typically high temperature manufacturing process of a fabrication line. In the next step, the device is in situ ion implanted with such a dose and energy to convert a fraction of the polycrystalline material into an amorphous material state, hereby tailoring the properties of the insulator. The fraction of polycrystalline material converted to amorphous material might be 1. This process can be applied to many electronic devices and some optical devices. The process results in novel perovskite thin layer materials and novel devices fabricated with such materials.

    摘要翻译： 本文提出了一种用于调整高k薄层钙钛矿材料的性能的方法，以及包括这种绝缘体的装置。 该方法包括以下步骤：首先基本完成装置的制造，该装置包含多晶形式的高k绝缘体。 诸如电容器或FET的器件经历了制造线的典型的高温制造工艺。 在下一步骤中，器件以这种剂量和能量原位离子注入，以将一部分多晶材料转化为无定形材料状态，从而调整绝缘体的性能。 转化为无定形材料的多晶材料的分数可能为1.该工艺可应用于许多电子器件和一些光学器件。 该方法产生新颖的钙钛矿薄层材料和用这种材料制造的新型器件。

    Lead silicate based capacitor structures
    10.
    发明授权
    Lead silicate based capacitor structures 失效
    硅酸铅基电容器结构

    公开(公告)号：US6088216A

    公开(公告)日：2000-07-11

    申请号：US431349

    申请日：1995-04-28

    申请人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    发明人： Robert Benjamin Laibowitz ,  Thomas McCarroll Shaw

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01G4/10

    CPC分类号： H01L28/55 ,  H01G4/10 ,  H01G4/129 ,  H01L21/31691

    摘要： A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may form the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.

    摘要翻译： 描述了一种电容器和制造方法，其包括半导体衬底，形成在衬底上或衬底中的底部电极，钡或硅酸铅的电介质层和顶部电极。 钡或硅酸铅和高介电常数材料如钡或钛酸铅的三明治电介质可形成电介质。 硅酸盐层可以通过蒸发和扩散，离子注入或电镀和扩散钡或铅而形成。 高ε介电常数材料可以通过溶胶凝胶沉积，金属有机化学气相沉积或溅射形成。 本发明克服了底部电极和电介质层的问题，化学相互作用以形成串联或低于所需电介质层的氧化硅层。