利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

30 条记录 (耗时 0.049 秒)

    MEMS RF switch with low actuation voltage
    1.
    发明授权
    MEMS RF switch with low actuation voltage 有权
    具有低致动电压的MEMS RF开关

    公开(公告)号：US06639488B2

    公开(公告)日：2003-10-28

    申请号：US09948478

    申请日：2001-09-07

    申请人： Hariklia Deligianni ,  Robert Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Panayotis Andricacos ,  John Cotte ,  L. Paivikki Buchwalter ,  David Seeger ,  Raul E. Acosta

    发明人： Hariklia Deligianni ,  Robert Groves ,  Christopher Jahnes ,  Jennifer L. Lund ,  Panayotis Andricacos ,  John Cotte ,  L. Paivikki Buchwalter ,  David Seeger ,  Raul E. Acosta

    IPC分类号： H01P110

    CPC分类号： H01P1/12 ,  H01H59/0009 ,  H01H2059/0036

    摘要： Disclosed is a capacitive electrostatic MEMS RF switch comprised of a lower electrode that acts as both a transmission line and as an actuation electrode. Also, there is an array of one or more fixed beams above the lower electrode that is connected to ground. The lower electrode transmits the RF signal when the top beam or beams are up and when the upper beams are actuated and bent down, the transmission line is shunted to ground ending the RF transmission. A high dielectric constant material is used in the capacitive portion of the switch to achieve a high capacitance per unit area thus reducing the required chip area and enhancing the insertion loss characteristics in the non-actuated state. A gap between beam and lower electrode of less than 1 &mgr;m is incorporated in order to minimize the electrostatic potential (pull-in voltage) required to actuate the switch.

    摘要翻译： 公开了一种电容静电MEMS RF开关，其由作为传输线和致动电极两者的下电极组成。 此外，在下电极上方有一个或多个连接到地面的固定梁的阵列。 当顶部梁或梁向上时，下部电极发射RF信号，并且当上部梁被致动并向下弯曲时，传输线被分流到结束RF传输的地面。 在开关的电容部分中使用高介电常数材料以实现每单位面积的高电容，从而在非致动状态下减少所需的芯片面积并增强插入损耗特性。 引入小于1um的光束和下电极之间的间隙以便使致动开关所需的静电电位（拉入电压）最小化。

    Lateral microelectromechanical system switch
    9.
    发明申请
    Lateral microelectromechanical system switch 有权
    侧向微机电系统开关

    公开(公告)号：US20050024169A1

    公开(公告)日：2005-02-03

    申请号：US10915742

    申请日：2004-08-11

    申请人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

    发明人： Hariklia Deligianni ,  Christopher Jahnes ,  Jennifer Lund ,  Lawrence Larson

    IPC分类号： H01H59/00 ,  H01H53/00

    CPC分类号： H01H59/0009 ,  H01H2001/0068 ,  H01H2001/0078

    摘要： A switch comprising a substrate, an elongated movable part, a pair of electrical contacts disposed at one side of said part, an actuation electrode disposed at the one side of the part and separated from the pair of electrical contacts, wherein the part, the contacts and the electrode are disposed on the substrate, wherein the elongated movable part is arranged and dimensioned such that the part is movable in a generally lateral direction toward the contacts; the movable part includes a central elongated member fixed to a head having an electrical contact disposed at the one side. One end of the movable part is attached to the substrate by means of various anchoring arrangements.

    摘要翻译： 一种开关，其包括基板，细长可动部分，设置在所述部分一侧的一对电触点，设置在该部分的一侧并与所述一对电触头分离的致动电极，其中所述部分，所述触点 并且所述电极设置在所述基板上，其中所述细长可动部分被布置和尺寸设定成使得所述部件能够沿大致横向方向朝向所述触点移动; 可移动部分包括固定到头部的中心细长构件，其具有设置在一侧的电触头。 可移动部分的一端通过各种锚定装置附接到基板。

    Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same
    10.
    发明申请
    Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same 失效
    通过使用其去除保护层和牺牲层的方法来获得释放稳定的微结构和器件

    公开(公告)号：US20060178004A1

    公开(公告)日：2006-08-10

    申请号：US11053610

    申请日：2005-02-08

    申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes

    发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes

    IPC分类号： H01L21/4763

    CPC分类号： B81C1/00476 ,  B81B2203/0118 ,  B81C2201/0132 ,  G01N1/32 ,  Y10S438/933

    摘要： A method of patterning and releasing chemically sensitive low k films without the complication of a permanent hardmask stack, yielding an unaltered free-standing structure is provided. The method includes providing a structure including a Si-containing substrate having in-laid etch stop layers located therein; forming a chemically sensitive low k film and a protective hardmask having a pattern atop the structure; transferring the pattern to the chemically sensitive low k film to provide an opening that exposes a portion of the Si-containing substrate; and etching the exposed portion of the Si-containing substrate through the opening to provide a cavity in the Si-containing substrate in which a free-standing low k film structure is formed, while removing the hardmask. In accordance with the present invention, the etching comprises a XeF2 etch gas.

    摘要翻译： 提供了图案化和释放化学敏感性低k膜的方法，而不需要永久性硬掩模堆叠的复杂性，产生未改变的独立结构。 该方法包括提供包括其中位于其中的内置蚀刻停止层的含Si衬底的结构; 形成化学敏感的低k膜和在结构顶部具有图案的保护性硬掩模; 将图案转移到化学敏感的低k膜上以提供暴露一部分含Si衬底的开口; 并且通过所述开口蚀刻含Si衬底的暴露部分，以在去除硬掩模的同时在其中形成独立的低k膜结构的含Si衬底中提供空腔。 根据本发明，蚀刻包括XeF 2 N 2蚀刻气体。