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130 条记录 (耗时 0.046 秒)

    Test structure for locating electromigration voids in dual damascene interconnects
    3.
    发明授权
    Test structure for locating electromigration voids in dual damascene interconnects 失效
    用于定位双镶嵌互连中电迁移空隙的测试结构

    公开(公告)号：US06995392B2

    公开(公告)日：2006-02-07

    申请号：US10214546

    申请日：2002-08-07

    申请人： Paul S. McLaughlin ,  Timothy D. Sullivan ,  Ping-Chuan Wang

    发明人： Paul S. McLaughlin ,  Timothy D. Sullivan ,  Ping-Chuan Wang

    IPC分类号： H01L23/58

    CPC分类号： H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A test structure is disclosed for locating electromigration voids in a semiconductor interconnect structure having an interconnect via interconnecting a lower metallization line with an upper metallization line. In an exemplary embodiment, the test structure includes a via portion the top of the interconnect via at the upper metallization line. In addition, a line portion extends from the via portion, wherein the line portion connects to an external probing surface, in addition to a probing surface on the lower metallization line, thereby allowing the identification of any electromigration voids present in the interconnect via.

    摘要翻译： 公开了一种测试结构，用于通过将下部金属化线与上部金属化线相互连接来定位具有互连的半导体互连结构中的电迁移空穴。 在示例性实施例中，测试结构包括在上金属化线处的互连通孔的顶部的通孔部分。 此外，线路部分从通孔部分延伸，其中线部分连接到外部探测表面，以及下部金属化线上的探测表面，从而允许识别互连通孔中存在的任何电迁移空隙。

    Thermally controlled refractory metal resistor
    4.
    发明授权
    Thermally controlled refractory metal resistor 有权
    耐热耐火金属电阻

    公开(公告)号：US08592947B2

    公开(公告)日：2013-11-26

    申请号：US12962722

    申请日：2010-12-08

    申请人： Joseph M. Lukaitis ,  Deborah M. Massey ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Kimball M. Watson

    发明人： Joseph M. Lukaitis ,  Deborah M. Massey ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Kimball M. Watson

    IPC分类号： H01L23/36

    CPC分类号： H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L27/0211 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.

    摘要翻译： 制造该结构的结构和方法包括：半导体衬底，其具有限定水平方向的顶表面和从最接近半导体衬底的顶表面的最底层到距离顶表面最远的最高水平层叠的多个互连层。 每个互连层包括在垂直于水平方向的垂直方向上彼此物理连接的垂直金属导体。 最底层的垂直导体物理地连接到衬底的顶表面，垂直导体形成连接到半导体衬底的散热片。 一个电阻器被包含在最上层的上方的层中。 垂直导体在电阻器的向下垂直电阻器占位面下对准，并且每个互连级别还包括位于水平方向上并且连接到垂直导体的水平金属导体。

    THERMALLY CONTROLLED REFRACTORY METAL RESISTOR
    5.
    发明申请
    THERMALLY CONTROLLED REFRACTORY METAL RESISTOR 有权
    热控制的金属电阻器

    公开(公告)号：US20120146186A1

    公开(公告)日：2012-06-14

    申请号：US12962722

    申请日：2010-12-08

    申请人： Joseph M. Lukaitis ,  Deborah M. Massey ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Kimball M. Watson

    发明人： Joseph M. Lukaitis ,  Deborah M. Massey ,  Timothy D. Sullivan ,  Ping-Chuan Wang ,  Kimball M. Watson

    IPC分类号： H01L27/06 ,  H01L21/02

    CPC分类号： H01L28/20 ,  H01L23/3677 ,  H01L23/5228 ,  H01L27/0211 ,  H01L28/24 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and method of fabricating the structure includes a semiconductor substrate having a top surface defining a horizontal direction and a plurality of interconnect levels stacked from a lowermost level proximate the top surface of the semiconductor substrate to an uppermost level furthest from the top surface. Each of the interconnect levels include vertical metal conductors physically connected to one another in a vertical direction perpendicular to the horizontal direction. The vertical conductors in the lowermost level being physically connected to the top surface of the substrate, and the vertical conductors forming a heat sink connected to the semiconductor substrate. A resistor is included in a layer immediately above the uppermost level. The vertical conductors being aligned under a downward vertical resistor footprint of the resistor, and each interconnect level further include horizontal metal conductors positioned in the horizontal direction and being connected to the vertical conductors.

    摘要翻译： 制造该结构的结构和方法包括：半导体衬底，其具有限定水平方向的顶表面和从最接近半导体衬底的顶表面的最底层到距离顶表面最远的最高水平层叠的多个互连层。 每个互连层包括在垂直于水平方向的垂直方向上彼此物理连接的垂直金属导体。 最底层的垂直导体物理地连接到衬底的顶表面，垂直导体形成连接到半导体衬底的散热片。 一个电阻器被包含在最上层的上方的层中。 垂直导体在电阻器的向下垂直电阻器占位面下对准，并且每个互连级别还包括位于水平方向上并且连接到垂直导体的水平金属导体。

    Array of alpha particle sensors
    8.
    发明授权
    Array of alpha particle sensors 失效
    α粒子传感器阵列

    公开(公告)号：US08647909B2

    公开(公告)日：2014-02-11

    申请号：US13357728

    申请日：2012-01-25

    申请人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    发明人： Ethan H. Cannon ,  Michael J. Hauser ,  Timothy D. Sullivan

    IPC分类号： H01L21/00

    CPC分类号： H01L31/115 ,  H01L23/552 ,  H01L23/556 ,  H01L25/0657 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An array of radiation sensors or detectors is integrated within a three-dimensional semiconductor IC. The sensor array is located relatively close to the device layer of a circuit (e.g., a microprocessor) to be protected from the adverse effects of the ionizing radiation particles. As such, the location where the radiation particles intersect the device layer can be calculated with coarse precision (e.g., to within 10 s of microns).

    摘要翻译： 辐射传感器或检测器阵列集成在三维半导体IC内。 传感器阵列相对靠近电路（例如，微处理器）的器件层定位，以防止电离辐射粒子的不利影响。 因此，辐射粒子与器件层相交的位置可以用粗精度（例如，在10微米以内）来计算。

    Micro-electro-mechanical-system temperature sensor
    10.
    发明授权
    Micro-electro-mechanical-system temperature sensor 失效
    微机电系统温度传感器

    公开(公告)号：US08480302B2

    公开(公告)日：2013-07-09

    申请号：US12892406

    申请日：2010-09-28

    申请人： Jason P. Gill ,  David L. Harmon ,  Timothy D. Sullivan

    发明人： Jason P. Gill ,  David L. Harmon ,  Timothy D. Sullivan

    IPC分类号： G01K5/00 ,  G01K7/00

    CPC分类号： G01K5/52

    摘要： The present invention provides a micro-electro-mechanical-system (MEMS) temperature sensor that employs a suspended spiral comprising a material with a positive coefficient of thermal expansion. The thermal expansion of the suspended spiral is guided to by a set of guideposts to provide a linear movement of the free end of the suspended spiral, which is converted to an electrical signal by a set of conductive rotor azimuthal fins that are interdigitated with a set of conductive stator azimuthal fins by measuring the amount of capacitive coupling therebetween. Real time temperature may thus be measured through the in-situ measurement of the capacitive coupling. Optionally, the MEMS temperature sensor may have a ratchet and a pawl to enable ex-situ measurement.

    摘要翻译： 本发明提供了一种微电子机械系统（MEMS）温度传感器，其采用悬浮螺旋，其包括具有正的热膨胀系数的材料。 悬挂螺旋的热膨胀由一组导轨引导以提供悬挂螺旋的自由端的线性运动，其被一组导电转子方位角翅片转换成电信号，所述导电转子方位角翅片与组相互指向 通过测量导电定子方位翅片之间的电容耦合量。 因此可以通过电容耦合的原位测量来测量实时温度。 可选地，MEMS温度传感器可以具有棘轮和棘爪以使得能够进行非原位测量。