公开(公告)号：US4956605A

公开(公告)日：1990-09-11

申请号：US381623

申请日：1989-07-18

申请人： Harry R. Bickford ,  William L. Boland ,  Daniel P. Morris ,  Timothy C. Reiley

发明人： Harry R. Bickford ,  William L. Boland ,  Daniel P. Morris ,  Timothy C. Reiley

IPC分类号： G01R31/26 ,  G01R31/28 ,  H01L21/60 ,  H01L21/66

CPC分类号： G01R31/2863 ,  H01L2924/0002

摘要： A TAB package comprises an elongated tape which has a plurality of sets of beam leads emplaced thereon and a plurality of electronic devices connected to the beam leads. At least a first beam lead of each set is connected to a common potential terminal on each device, and at least a second beam lead of each set is connected to a power terminal. A common potential bus is oriented along the elongated dimension of the tape and connects to the first beam leads, while a power bus is also oriented along the elongated dimension of the tape and is connected to the second beam leads. The application of power to the power bus and the simultaneous grounding of the common potential bus enables all electronic devices on the tape to be simultaneously energized and to be then subjected to an elevated temperature environment for static burn-in testing. To improve current conduction in the power and common potential buses, a tape comprising a non-conductive carrier and a pair of interposer/conductor tapes may be emplaced over the length of the tape bearing the chips. An additional spacer tape is then emplaced over the interposer tape and forces the interposer conductors into contact with the power and common potential buses.

公开(公告)号：US5134460A

公开(公告)日：1992-07-28

申请号：US609057

申请日：1990-11-02

申请人： Michael J. Brady ,  Sung K. Kang ,  Paul A. Moskowitz ,  James G. Ryan ,  Timothy C. Reiley ,  Erick G. Walton ,  Harry R. Bickford ,  Michael J. Palmer

发明人： Michael J. Brady ,  Sung K. Kang ,  Paul A. Moskowitz ,  James G. Ryan ,  Timothy C. Reiley ,  Erick G. Walton ,  Harry R. Bickford ,  Michael J. Palmer

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/86 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  Y10S257/915

摘要： A semiconductor chip carrying integrated circuits has lead lines terminating in conductive terminal pads exposed to the exterior through openings in a passivation layer. The pads include pedestals or bumps extending up from them. Each of the pedestals includes a thin metallic adhesion layer deposited on the pad. A thick metallic layer of aluminum or an alloy of aluminum is deposited upon said thin metallic adhesion layer. The thick metallic layer includes at least one metal selected from the group consisting of aluminum, aluminum plus a small percentage of Cu, Ni, Si, or Fe. Several other alternative metals can be added to aluminum to form an alloy. The thick metallic layer forms the bulk of the height of the pedestal. An adhesion layer is deposited on the bump of aluminum composed of a thin film of titanium or chromium. A barrier layer is deposited on the adhesion layer composed of copper, nickel, platinum, palladium or cobalt. A noble metal consisting of gold, palladium, or platinum is deposited on the barrier layer. In a variation of the top surface, a thick cap of a reworkable bonding metal is deposited above the metallic bump as the top surface of said bump. The bump can be composed of a number of metals such as gold, copper, nickel and aluminum in this case with aluminum being preferred. In place of the adhesion and barrier metals one can employ a layer of titanium nitride deposited on said thick layer of metal.

摘要翻译： 携带集成电路的半导体芯片具有终端于通过钝化层中的开口暴露于外部的导电端子焊盘中的导线。 垫片包括从它们向上延伸的基座或凸块。 每个基座包括沉积在垫上的薄金属粘附层。 铝的厚金属层或铝合金沉积在所述薄金属粘合层上。 厚金属层包括选自铝，铝和小百分比的Cu，Ni，Si或Fe中的至少一种金属。 可以将几种其它替代金属加入到铝中以形成合金。 厚的金属层形成基座的高度的大部分。 粘合层沉积在由钛或铬的薄膜构成的铝凸块上。 阻挡层沉积在由铜，镍，铂，钯或钴组成的粘合层上。 由金，钯或铂组成的贵金属沉积在阻挡层上。 在顶表面的变型中，可再加工的粘合金属的厚盖被沉积在金属凸块上方作为所述凸块的顶表面。 凸起可以由许多金属如金，铜，镍和铝组成，在这种情况下，优选铝。 代替粘合和阻挡金属，可以使用沉积在所述厚金属层上的氮化钛层。

公开(公告)号：US5028983A

公开(公告)日：1991-07-02

申请号：US263835

申请日：1988-10-27

申请人： Harry R. Bickford ,  Mark F. Bregman ,  Thomas M. Cipolla ,  John Gow, III ,  Peter G. Ledermann ,  Ekkehard F. Miersch ,  Leonard T. Olson ,  David P. Pagnani ,  Timothy C. Reiley ,  Uh-Po E. Tsou ,  Walter V. Vilkelis

发明人： Harry R. Bickford ,  Mark F. Bregman ,  Thomas M. Cipolla ,  John Gow, III ,  Peter G. Ledermann ,  Ekkehard F. Miersch ,  Leonard T. Olson ,  David P. Pagnani ,  Timothy C. Reiley ,  Uh-Po E. Tsou ,  Walter V. Vilkelis

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L24/50 ,  H01L23/49572 ,  H01L23/49861 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011

摘要： Electronic device packaging structures useful for electrically interconnecting an electronic device to a substrate. The structure contains at least two metallization layers with dielectric layers between adjacent to metallization layers. The dielectric layers can have variable thickness. Beam leads can project inwardly in cantilevered fashion over a central aperture through the dielectric layers. The inner ends of the beam leads lie substantially in one plane and can be bonded to contact pads on integrated circuit electronic devices. Beam leads can project outwardly from the metallization layers over outer edges of the dielectric layers for bonding to contact pads on a substrate. Signal leads on metallization layers can be symmetrically arranged between ground and voltage leads to provide optimal impedance properties. These structures are useful for tape automated bonding applications.

公开(公告)号：US4862322A

公开(公告)日：1989-08-29

申请号：US188805

申请日：1988-05-02

申请人： Harry R. Bickford ,  Mark F. Bregman ,  Paul A. Moskowitz ,  Michael J. Palmer ,  Timothy C. Reiley ,  Paige A. Poore ,  Caroline A. Kovac

发明人： Harry R. Bickford ,  Mark F. Bregman ,  Paul A. Moskowitz ,  Michael J. Palmer ,  Timothy C. Reiley ,  Paige A. Poore ,  Caroline A. Kovac

IPC分类号： H01L25/18 ,  H01L23/495 ,  H01L25/065 ,  H01L25/07

CPC分类号： H01L25/0657 ,  H01L23/49575 ,  H01L25/0652 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2225/06513 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107

摘要： An integrated circuit device package in which integrated circuit devices are mounted with active faces placed facing each other to form a double-device structure. Input/output terminals on the active faces of each device can be electrically interconnected by placing an interconnection means between the chips to electrically interconnect input/output terminals on the active faces of the first and second device. Beam leads, each having an inner and outer lead bond site, project outwardly from between the devices where each of the inner lead bond site is solderlessly bonded between conducting patterns on each device bonded. A series of double-device structures can be formed on a tape having a plurality of sets of beam lead patterns thereon. Each beam lead of each set having an inner and outer lead bond site, projects outwardly from between the double-device structure, the inner lead bond site being solderlessly bonded between conducting patterns on each device.

公开(公告)号：US5399902A

公开(公告)日：1995-03-21

申请号：US026427

申请日：1993-03-04

申请人： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

发明人： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

IPC分类号： H01L23/02 ,  H01L23/10 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H05K3/34 ,  H01L49/00 ,  H01L23/48 ,  H01L27/04 ,  H01L29/44

CPC分类号： H05K3/3426 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49572 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/48464 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K2201/10568 ,  H05K2201/10681 ,  H05K2201/10689 ,  Y02P70/613

摘要： A semiconductor chip package wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that has a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

摘要翻译： 半导体芯片封装，其中芯片是封装强度的主要贡献者。 外部触点和布线由多层布线构件提供，多层布线构件具有在导体层上的嵌入式电力总线层的网状接地面，用于扩展失配控制和阻抗控制，保护封装覆盖从布线导体到芯片的接合，外部 接触连接通过接触构件采用熔融金属。

公开(公告)号：US5318803A

公开(公告)日：1994-06-07

申请号：US614669

申请日：1990-11-13

申请人： Harry R. Bickford ,  Dennis A. Canfield ,  Arthur E. Graham ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Harry R. Bickford ,  Dennis A. Canfield ,  Arthur E. Graham ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C23C18/52 ,  C23C18/28 ,  C23C18/31 ,  H05K3/18 ,  B05D1/00

CPC分类号： H05K3/181 ,  C23C18/28

摘要： A dielectric substrate is conditioned for subsequent electroless plating thereon by contacting with a catalytic metal salt and then with a reducing agent and with an electroless metal plating bath followed by contacting with a second catalytic metal salt. In addition, a dielectric substrate is conditioned for electroless plating thereon by obtaining a substrate of a dielectric material that contains metal particles therein and contacting with a catalytic metal salt.

摘要翻译： 通过与催化金属盐接触，然后与还原剂和无电金属电镀浴接触，然后与第二催化金属盐接触，对电介质基板进行后续的化学镀处理。 此外，通过获得在其中含有金属颗粒并与催化金属盐接触的电介质材料的基底，调节电介质基板上的化学镀。

公开(公告)号：US4832255A

公开(公告)日：1989-05-23

申请号：US223818

申请日：1988-07-25

申请人： Harry R. Bickford ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Michael J. Palmer

发明人： Harry R. Bickford ,  Kurt R. Grebe ,  Caroline A. Kovac ,  Michael J. Palmer

IPC分类号： B23K3/06 ,  B23K35/14 ,  B23K35/40 ,  H01L21/60 ,  H05K3/04 ,  H05K3/34 ,  H05K13/04

CPC分类号： H01L24/27 ,  B23K3/06 ,  H05K13/0465 ,  H05K3/3473 ,  H05K3/3478 ,  H01L2224/13111 ,  H01L2224/29111 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1579 ,  H05K2203/0108 ,  H05K2203/0338 ,  H05K2203/043 ,  H05K2203/0528 ,  H05K2203/0726 ,  H05K2203/1105 ,  H05K3/046 ,  Y10T29/49204 ,  Y10T29/4921 ,  Y10T29/49213

摘要： This invention employs a carrier upon which a thin conductive film has been applied. The conductive film is of a metallic material which exhibits a surface energy such that it is not readily wetted by solder. A patterned mask is disposed on the conductive film, with the mask having openings which expose selected areas of the conductive film. Solder is deposited in the mask openings and is weakly adherent to the exposed areas of the conductive film. The carrier is then disposed over and in registration with conductive land areas of a circuit carrier, such that the solder in the mask openings is aligned with the land areas of the circuit carrier. Subsequently, the carrier and circuit land areas are brought into contact, heated, the solder bonded to the lands, and the carrier is lifted away for subsequent reuse.In another species of the invention, a thin film layer of solder is directly deposited on and weakly adherent to a flexible base layer. Subsequently, tool means which registers with the areas to be soldered, presses the base layer/solder combination against the areas to be coated with solder, thereby causing the solder to adhere to the underlying circuit configuration.

公开(公告)号：US5205461A

公开(公告)日：1993-04-27

申请号：US524408

申请日：1990-05-16

申请人： Harry R. Bickford ,  Raymond R. Horton ,  Ismail C. Noyan ,  Michael J. Palmer ,  John C. Zyzo

发明人： Harry R. Bickford ,  Raymond R. Horton ,  Ismail C. Noyan ,  Michael J. Palmer ,  John C. Zyzo

IPC分类号： B23K1/012 ,  H01L21/00 ,  H05K3/34

CPC分类号： H01L21/67144 ,  B23K1/012 ,  H05K3/3494

摘要： Method and apparatus for fluxlessly solder bonding a solder mound to a solder wettable surface. A heated gas, preferably a reducing or non-reactive gas, is directed at a solid solder mound. Gas is heated to a temperature sufficient to melt solder mound. The heated gas is directed at the molten solder mound at a momentum sufficient to disperse an oxide layer at the surface of the molten solder mound. Dispersing the oxide layer permits the molten solder to wet the solder wettable surface. The molten solder is cooled to form a solder bond.

摘要翻译： 将焊锡焊料无焊焊接到焊料可润湿表面的方法和装置。 加热气体，优选还原性或非反应性气体，被引导到固体焊料堆。 将气体加热到足以熔化焊料堆的温度。 加热的气体以足以将氧化物层分散在熔融焊料堆的表面的动量指向熔融焊料堆。 分散氧化物层允许熔融焊料润湿焊料可润湿表面。 将熔融的焊料冷却以形成焊料接合。

公开(公告)号：US5480841A

公开(公告)日：1996-01-02

申请号：US302084

申请日：1994-09-07

申请人： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

发明人： Harry R. Bickford ,  Paul W. Coteus ,  Linda C. Matthew

IPC分类号： H01L23/02 ,  H01L23/10 ,  H01L23/495 ,  H01L23/498 ,  H01L23/50 ,  H05K3/34 ,  H01L21/60

CPC分类号： H05K3/3426 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49572 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/48464 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K2201/10568 ,  H05K2201/10681 ,  H05K2201/10689 ,  Y02P70/613

摘要： A process of providing an external wiring and connecting package for a semiconductor chip wherein the chip is a major contributor to the strength of the package. External contacts and wiring are provided by a multilayer wiring member that may include a mesh ground plane with embedded power bus layer over a conductor layer for expansion mismatch control and impedance control, a protective encapsulation covers the bonds from the wiring conductors to the chip, and external contact connections employ fused metal through the contact members.

摘要翻译： 提供用于半导体芯片的外部布线和连接封装的工艺，其中芯片是封装强度的主要贡献者。 外部触点和布线由多层布线构件提供，多层布线构件可以包括在导体层上的嵌入式电源总线层的网格接地面，用于扩展失配控制和阻抗控制，保护封装覆盖从布线导体到芯片的接合，以及 外部接触连接通过接触构件使用熔融金属。

公开(公告)号：US5374454A

公开(公告)日：1994-12-20

申请号：US13652

申请日：1993-02-04

申请人： Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

发明人： Harry R. Bickford ,  Peter J. Duke ,  Elizabeth Foster ,  Martin J. Goldberg ,  Voya R. Markovich ,  Linda C. Matthew ,  Donald G. McBride ,  Terrence R. O'Toole ,  Stephen L. Tisdale ,  Alfred Viehbeck

IPC分类号： C08J3/24 ,  C23C18/20 ,  C23C18/28 ,  C25D5/56 ,  H05K1/03 ,  H05K3/18 ,  H05K3/38 ,  H05K3/42 ,  B05D1/00

CPC分类号： H05K3/422 ,  C23C18/208 ,  C23C18/2093 ,  C23C18/30 ,  C25D5/56 ,  H05K3/381 ,  H05K1/034 ,  H05K3/181 ,  Y10S428/901 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/24339 ,  Y10T428/24802 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31678

摘要： A halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched. The exposed portions can also be doped to thereby induce electrical conductivity therein. Also, new structures containing a free standing halogenated polymeric-containing layer and electrical conductive pattern thereon are provided.

摘要翻译： 将卤化聚合物材料暴露于还原剂和/或电解质和施加的电压以使得能够被金属化并被蚀刻的暴露部分。 暴露部分也可以被掺杂从而在其中诱导电导率。 此外，提供了含有独立卤代聚合物层和在其上的导电图案的新结构。