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    Electronic package with filled blinds vias
    3.
    发明授权
    Electronic package with filled blinds vias 有权
    带盲孔通孔的电子包装

    公开(公告)号：US07084509B2

    公开(公告)日：2006-08-01

    申请号：US10263909

    申请日：2002-10-03

    申请人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  Voya R. Markovich ,  Manh-Quan Tam Nguyen

    发明人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  Voya R. Markovich ,  Manh-Quan Tam Nguyen

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H05K1/115 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/09554 ,  H05K2201/096 ,  H05K2203/0733 ,  H01L2924/00

    摘要： The density of electronic packaging and the electrical reliability of the sub-assemblies utilizing stacked blind vias are improved by providing a blind, landless via in a first dielectric layer laminated to a conductive metal core serving as a ground plane or a power plane. A hole is provided through the dielectric layer extending to the core. A metal, such as copper, is deposited electrolytically using the metal core as the cathode, or electrolessly without seeding into the hole. The metal is deposited on the core and progressively builds in the hole to the depth required for the via. A second dielectric layer is laminated to the first, and is provided with a second layer blind via aligned with the first via. This second via may be formed by conventional plating techniques. Multiple dielectric layers with stacked blind vias can be assembled in this manner.

    摘要翻译： 通过在层叠到用作接地平面或电源平面的导电金属芯的第一介电层中提供盲目的无地通孔来改善电子封装的密度和利用堆叠盲孔的子组件的电可靠性。 通过延伸到芯的电介质层提供孔。 使用金属芯作为阴极电解沉积诸如铜的金属，或者无电渗入孔中。 金属沉积在芯上并逐渐建立在孔中以达到通孔所需的深度。 第二电介质层被层压到第一电介质层，并且具有与第一通孔对准的第二层盲孔。 该第二通孔可以由常规电镀技术形成。 可以以这种方式组装具有堆叠的盲孔的多个电介质层。

    Method of forming filled blind vias
    4.
    发明授权
    Method of forming filled blind vias 有权
    形成填充盲孔的方法

    公开(公告)号：US06924224B2

    公开(公告)日：2005-08-02

    申请号：US10729174

    申请日：2003-12-05

    申请人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  Voya R. Markovich ,  Manh-Quan Tam Nguyen

    发明人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  Voya R. Markovich ,  Manh-Quan Tam Nguyen

    IPC分类号： H01L21/48 ,  H01L23/498 ,  H05K1/11 ,  H05K3/46 ,  H01L21/4762 ,  H01L21/44

    CPC分类号： H05K1/115 ,  H01L21/486 ,  H01L23/49827 ,  H01L2924/0002 ,  H05K3/4602 ,  H05K2201/09509 ,  H05K2201/09554 ,  H05K2201/096 ,  H05K2203/0733 ,  H01L2924/00

    摘要： The density of electronic packaging and the electrical reliability of the sub-assemblies utilizing stacked blind vias are improved by providing a blind, landless via in a first dielectric layer laminated to a conductive metal core serving as a ground plane or a power plane. A hole is provided through the dielectric layer extending to the core. A metal, such as copper, is deposited electrolytically using the metal core as the cathode, or electrolessly without seeding into the hole. The metal is deposited on the core and progressively builds in the hole to the depth required for the via. A second dielectric layer is laminated to the first, and is provided with a second layer blind via aligned with the first via. This second via may be formed by conventional plating techniques. Multiple dielectric layers with stacked blind vias can be assembled in this manner.

    摘要翻译： 通过在层叠到用作接地平面或电源平面的导电金属芯的第一电介质层中提供盲目的无地通孔来改善电子封装的密度和利用堆叠盲孔的子组件的电可靠性。 通过延伸到芯的电介质层提供孔。 使用金属芯作为阴极电解沉积诸如铜的金属，或者化学镀而不接合到孔中。 金属沉积在芯上并逐渐建立在孔中以达到通孔所需的深度。 第二电介质层被层压到第一电介质层，并且具有与第一通孔对准的第二层盲孔。 该第二通孔可以由常规电镀技术形成。 可以以这种方式组装具有堆叠的盲孔的多个电介质层。

    Fabrication of a metalized blind via
    5.
    发明授权
    Fabrication of a metalized blind via 有权
    金属化盲孔的制造

    公开(公告)号：US06522014B1

    公开(公告)日：2003-02-18

    申请号：US09670968

    申请日：2000-09-27

    申请人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    发明人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    IPC分类号： H01L2348

    CPC分类号： H01L21/486 ,  H01L23/49827 ,  H01L2224/16225 ,  H05K3/0032 ,  H05K3/0035 ,  H05K3/424 ,  H05K2201/0323 ,  H05K2203/1136

    摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer comprises a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, then the blind via may have any cross-sectional shape, such as circular or non-circular, a rectangular channel, or a combination thereof.

    摘要翻译： 用于形成金属化盲孔的方法和结构。 在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。 如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。 电介质层包括具有碳基聚合物材料的介电材料，例如永久性光致抗蚀剂，聚酰亚胺和先进的焊接掩模（ASM）。 金属层包括金属材料，例如铜，铝和金。 碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。 激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。 凹陷可以具有任何横截面形状和深度的任何空间分布。 作为示例，凹陷可以包括盲孔，则盲孔可以具有任何横截面形状，例如圆形或非圆形，矩形通道或其组合。

    Fabrication of a metalized blind via
    6.
    发明授权
    Fabrication of a metalized blind via 失效
    金属化盲孔的制造

    公开(公告)号：US06576549B2

    公开(公告)日：2003-06-10

    申请号：US10282275

    申请日：2002-10-28

    申请人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    发明人： Frank D. Egitto ,  Elizabeth Foster ,  Raymond T. Galasco ,  David E. Houser ,  Mark L. Janecek ,  Thomas E. Kindl ,  Jeffrey A. Knight ,  Stephen W. MacQuarrie ,  Voya R. Markovich ,  Luis J. Matienzo ,  Amarjit S. Rai ,  David J. Russell ,  William T. Wike

    IPC分类号： H01L2131

    CPC分类号： H01L21/486 ,  H01L23/49827 ,  H01L2224/16225 ,  H05K3/0032 ,  H05K3/0035 ,  H05K3/424 ,  H05K2201/0323 ,  H05K2203/1136

    摘要： A method and structure for forming a metalized blind via. A dielectric layer is formed on a metallic layer, followed by laser drilling a depression in the dielectric layer such that a carbon film that includes the carbon is formed on a sidewall of the depression. If the laser drilling does not expose the metallic layer, then an anisotropic plasma etching, such as a reactive ion etching (RIE), may be used to clean and expose a surface of the metallic layer. The dielectric layer includes a dielectric material having a carbon based polymeric material, such as a permanent photoresist, a polyimide, and advanced solder mask (ASM). The metallic layer includes a metallic material, such as copper, aluminum, and gold. The carbon film is in conductive contact with the metallic layer, and the carbon film is sufficiently conductive to permit electroplating a continuous layer of metal (e.g., copper) directly on the carbon film without need of an electrolessly plated layer underneath the electroplated layer. The laser drilling is accomplished using a laser radiation having a wavelength between about 180 nanometers and about 600 nanometers. The depression may have any cross-sectional shape and any spatial distribution of depths. As an example, the depression may include a blind via, a rectangular channel, or a combination thereof.

    摘要翻译： 用于形成金属化盲孔的方法和结构。 在金属层上形成电介质层，随后在电介质层中激光钻出凹陷，使得在凹陷的侧壁上形成包含碳的碳膜。 如果激光钻孔不暴露金属层，则可以使用诸如反应离子蚀刻（RIE）的各向异性等离子体蚀刻来清洁和暴露金属层的表面。 电介质层包括具有碳基聚合物材料的电介质材料，例如永久性光致抗蚀剂，聚酰亚胺和高级阻焊剂（ASM）。 金属层包括金属材料，例如铜，铝和金。 碳膜与金属层导电接触，并且碳膜具有足够的导电性，以允许直接在碳膜上电镀连续的金属层（例如铜），而不需要在电镀层下面的无电镀层。 激光钻孔使用波长在约180纳米和约600纳米之间的激光辐射完成。 凹陷可以具有任何横截面形状和深度的任何空间分布。 作为示例，凹陷可以包括盲孔，矩形通道或其组合。

    Circuitized substrate with low loss capacitive material and method of making same
    8.
    发明授权
    Circuitized substrate with low loss capacitive material and method of making same 有权
    具有低损耗电容性材料的电路化基板及其制造方法

    公开(公告)号：US08446707B1

    公开(公告)日：2013-05-21

    申请号：US13269770

    申请日：2011-10-10

    申请人： Rabindra N. Das ,  Konstantinos I. Papathomas ,  Voya R. Markovich ,  James J. McNamara

    发明人： Rabindra N. Das ,  Konstantinos I. Papathomas ,  Voya R. Markovich ,  James J. McNamara

    IPC分类号： H01G4/06

    CPC分类号： H01G4/33 ,  H01G7/06 ,  H05K1/0231 ,  H05K3/429 ,  H05K3/4602

    摘要： A low loss capacitance and low loss insulating dielectric material consisting of a thermosetting resin, thermoplastic resin, a cross-linker, and containing a quantity of ferroelectric ceramic nano-particles of barium titanate within. The combined low loss insulating dielectric layer and a low loss capacitive layer resulting from the material allows one continuous layer that can form internal capacitors and permit the modifying the dielectric thickness between signal layers for impedance matching within a layer of substrate. More significantly, the applied layer of low loss capacitive materials can simultaneously act as a capacitor as well as a dielectric for separation of signal layers.

    摘要翻译： 由热固性树脂，热塑性树脂，交联剂组成的含有钛酸钡的铁电陶瓷纳米粒子的低损耗电容和低损耗绝缘介电材料。 组合的低损耗绝缘电介质层和由该材料产生的低损耗电容层允许一个连续的层可以形成内部电容器并且允许改变信号层之间的介电厚度以在衬底层内进行阻抗匹配。 更重要的是，所应用的低损耗电容材料层可以同时充当电容器以及用于分离信号层的电介质。