公开(公告)号：US5134460A

公开(公告)日：1992-07-28

申请号：US609057

申请日：1990-11-02

申请人： Michael J. Brady ,  Sung K. Kang ,  Paul A. Moskowitz ,  James G. Ryan ,  Timothy C. Reiley ,  Erick G. Walton ,  Harry R. Bickford ,  Michael J. Palmer

发明人： Michael J. Brady ,  Sung K. Kang ,  Paul A. Moskowitz ,  James G. Ryan ,  Timothy C. Reiley ,  Erick G. Walton ,  Harry R. Bickford ,  Michael J. Palmer

IPC分类号： H01L21/60 ,  H01L23/485

CPC分类号： H01L24/86 ,  H01L24/10 ,  H01L24/13 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  Y10S257/915

摘要： A semiconductor chip carrying integrated circuits has lead lines terminating in conductive terminal pads exposed to the exterior through openings in a passivation layer. The pads include pedestals or bumps extending up from them. Each of the pedestals includes a thin metallic adhesion layer deposited on the pad. A thick metallic layer of aluminum or an alloy of aluminum is deposited upon said thin metallic adhesion layer. The thick metallic layer includes at least one metal selected from the group consisting of aluminum, aluminum plus a small percentage of Cu, Ni, Si, or Fe. Several other alternative metals can be added to aluminum to form an alloy. The thick metallic layer forms the bulk of the height of the pedestal. An adhesion layer is deposited on the bump of aluminum composed of a thin film of titanium or chromium. A barrier layer is deposited on the adhesion layer composed of copper, nickel, platinum, palladium or cobalt. A noble metal consisting of gold, palladium, or platinum is deposited on the barrier layer. In a variation of the top surface, a thick cap of a reworkable bonding metal is deposited above the metallic bump as the top surface of said bump. The bump can be composed of a number of metals such as gold, copper, nickel and aluminum in this case with aluminum being preferred. In place of the adhesion and barrier metals one can employ a layer of titanium nitride deposited on said thick layer of metal.

摘要翻译： 携带集成电路的半导体芯片具有终端于通过钝化层中的开口暴露于外部的导电端子焊盘中的导线。 垫片包括从它们向上延伸的基座或凸块。 每个基座包括沉积在垫上的薄金属粘附层。 铝的厚金属层或铝合金沉积在所述薄金属粘合层上。 厚金属层包括选自铝，铝和小百分比的Cu，Ni，Si或Fe中的至少一种金属。 可以将几种其它替代金属加入到铝中以形成合金。 厚的金属层形成基座的高度的大部分。 粘合层沉积在由钛或铬的薄膜构成的铝凸块上。 阻挡层沉积在由铜，镍，铂，钯或钴组成的粘合层上。 由金，钯或铂组成的贵金属沉积在阻挡层上。 在顶表面的变型中，可再加工的粘合金属的厚盖被沉积在金属凸块上方作为所述凸块的顶表面。 凸起可以由许多金属如金，铜，镍和铝组成，在这种情况下，优选铝。 代替粘合和阻挡金属，可以使用沉积在所述厚金属层上的氮化钛层。

公开(公告)号：US5242569A

公开(公告)日：1993-09-07

申请号：US664399

申请日：1991-03-04

申请人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

发明人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

IPC分类号： B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/603

CPC分类号： H01L24/80 ,  B23K20/023 ,  B23K20/233 ,  B23K33/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14

摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.mm的强电负极电镀浴中镀金而制成。 当前密度。 提供用于电镀不同区域的电镀装置，具有不同的电负性条件，具有单独的独立供电的阳极。

公开(公告)号：US5006917A

公开(公告)日：1991-04-09

申请号：US398799

申请日：1989-08-25

申请人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

发明人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

IPC分类号： B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/60 ,  H01L21/603

CPC分类号： H01L24/80 ,  B23K20/023 ,  B23K20/233 ,  B23K33/00 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14

摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

公开(公告)号：US5120418A

公开(公告)日：1992-06-09

申请号：US664388

申请日：1991-03-04

申请人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

发明人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

IPC分类号： B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/603

CPC分类号： H01L24/80 ,  B23K20/023 ,  B23K20/233 ,  B23K33/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14

摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.cm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separatre independently powered anodes, is provided.

摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.cm范围内的强电负电镀浴中镀金而制成。 当前密度。 提供了用于电镀不同区域的电镀装置，具有不同的电负性条件，具有独立供电的阳极。

公开(公告)号：US5135155A

公开(公告)日：1992-08-04

申请号：US664359

申请日：1991-03-04

申请人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

发明人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

IPC分类号： B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/603

CPC分类号： H01L24/80 ,  B23K20/023 ,  B23K20/233 ,  B23K33/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14

摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

公开(公告)号：US5148261A

公开(公告)日：1992-09-15

申请号：US646413

申请日：1991-01-28

申请人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

发明人： Sung K. Kang ,  Michael J. Palmer ,  Timothy C. Reiley ,  Robert D. Topa

IPC分类号： B23K20/02 ,  B23K20/233 ,  B23K33/00 ,  H01L21/603

CPC分类号： H01L24/80 ,  B23K20/023 ,  B23K20/233 ,  B23K33/00 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10T428/12438

摘要： A contact member for thermocompression bonding in integrated circuit packaging has on a conductor end a uniform texture deformable layer with a hardness value in the range of that of soft gold which is approximately 90 on the Knoop scale and with a rough surface morphology having ridges with approximately 1 micrometer modulation frequency and a depth between ridges of from 1/4 to 1/2 that of the average integrated circuit pad. The deformable layer is produced by plating gold in a strong electronegative plating bath within a range of 0.03 to 0.05 mA/sq.mm. current density. Plating apparatus, for plating different areas, with different electronegative conditions, with separate independently powered anodes, is provided.

摘要翻译： 用于集成电路封装中的热压接的接触构件在导体端具有均匀的织构可变形层，硬度值在Knoop尺度上大约为90的软金的范围内，粗糙的表面形态具有大约 1微米调制频率和脊之间的深度为平均集成电路板的1/4至1/2。 可变形层通过在0.03-0.05mA / sq.mm的强电负极电镀浴中镀金而制成。 当前密度。 提供用于电镀不同区域的电镀装置，具有不同的电负性条件，具有单独的独立供电的阳极。

公开(公告)号：US5633047A

公开(公告)日：1997-05-27

申请号：US449196

申请日：1995-05-24

申请人： Michael J. Brady ,  Curtis E. Farrell ,  Sung K. Kang ,  Jeffrey R. Marino ,  Donald J. Mikalsen ,  Paul A. Moskowitz ,  Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  Sheldon C. Rieley ,  George F. Walker

发明人： Michael J. Brady ,  Curtis E. Farrell ,  Sung K. Kang ,  Jeffrey R. Marino ,  Donald J. Mikalsen ,  Paul A. Moskowitz ,  Eugene J. O'Sullivan ,  Terrence R. O'Toole ,  Sampath Purushothaman ,  Sheldon C. Rieley ,  George F. Walker

IPC分类号： C23C18/50 ,  C25D3/54 ,  H01L23/495 ,  H01L23/532 ,  B05D1/18

CPC分类号： H01L24/12 ,  C23C18/50 ,  C25D3/54 ,  H01L23/4951 ,  H01L23/53271 ,  H01L24/05 ,  H01L24/48 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/73215 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L2224/85214 ,  H01L24/45 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/181

摘要： Silicon and germanium containing materials are used at surface of conductors in electronic devices. Solder can be fluxlessly bonded and wires can be wire bonded to these surfaces. These material are used as a surface coating for lead frames for packaging integrated circuit chips. These materials can be decal transferred onto conductor surfaces or electrolessly or electrolytically disposed thereon.

摘要翻译： 在电子设备中的导体的表面使用含锗和锗的材料。 焊料可无焊接，电线可以与这些表面引线接合。 这些材料用作用于封装集成电路芯片的引线框架的表面涂层。 这些材料可以贴花地转移到导体表面上，或者无电解或电解地放置在其上。

公开(公告)号：US07703661B2

公开(公告)日：2010-04-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduced or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以痕量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷却温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。

公开(公告)号：US20080290142A1

公开(公告)日：2008-11-27

申请号：US11752382

申请日：2007-05-23

申请人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

发明人： Gareth G. Hougham ,  Kamalesh K. Srivastava ,  Sung K. Kang ,  Da-Yuan Shih ,  Brian R. Sundlof ,  S. Jay Chey ,  Donald W. Henderson ,  David R. Di Milia ,  Richard P. Ferlita ,  Roy A. Carruthers

IPC分类号： B23K35/24 ,  B23K101/36 ,  B23K31/02

CPC分类号： B23K1/19 ,  B23K35/262 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0215

摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.

摘要翻译： 简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。 该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。 将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。 因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。 这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。 此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。 此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

公开(公告)号：US20080203585A1

公开(公告)日：2008-08-28

申请号：US12113108

申请日：2008-04-30

申请人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

发明人： Keith E. Fogel ,  Balaram Ghosal ,  Sung K. Kang ,  Stephen Kilpatrick ,  Paul A. Lauro ,  Henry A. Nye ,  Da-Yuan Shih ,  Donna S. Zupanski-Nielsen

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/00014

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting composition including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.