摘要:
A mounting structure for an engine cover includes: a protruded member which has a neck and a head with a larger diameter than the neck; and a recessed member which has an external circumferential surface small diameter section to be locked to a mounting hole of a mounting seat arranged so as to be opposed to the protruded member, and a concave holding the head of the press-fit protruded member. In the protruded member, at least a portion surrounding the concave is formed solid. The head is arranged closer to a rear surface of the engine cover than the mounting hole. A compression space, which is compressed in the case in which a collision load equal to or larger than a predetermined value is applied in a front and rear direction of the engine cover, is defined between the recessed member and the rear surface of the engine cover.
摘要:
A multiport memory is provided which permits both random access and serial access. In order to reduce parasitic capacitance and improve operating speed, the serial input/output lines are each divided into two parts at their middle points. Sense amplifiers for the serial input/output lines are provided at upper and lower ends of the serial access memory elements to respectively amplify signals from the divided lines. Additional features are provided for improving both the serial and random operation. For example, during the serial read mode, the column selector for random access is simultaneously operated, and read data passing through the random access column selector is used as head data for the serial output operation to be delivered through the serial output circuit. Also, a serial selector can be controlled by a select signal formed by a Gray Code counter to improve operating speed. Further features included a redundancy system for relief of defective bits, the use of common bit lines to improve integration density and an improved refreshing arrangement to reduce power consumption during the refresh mode.
摘要:
A data output buffer is provided in connection with a semiconductor memory, such as a pseudostatic RAM, which is capable of high speed operation with respect to memory data readout. The buffer includes a latch circuit comprising a pair of NAND gate circuits having input and output terminals connected in cross connection, a pair of precharge MOSFETs provided respectively between the noninverted and inverted input terminals of the latch circuit, a pair of CMOS NAND gates which transfer the inverted signal of the latch circuit according to an inverted timing signal and a pair of series-connected MOSFETs effecting a pull-up/pull-down arrangement which receives the inverted signal of the output signal of the NAND gates.
摘要:
In the past, it has been a problem in integrated circuits using MOSFETs that the gate insulating film of a transmission gate MOSFET is broken down when an abnormally high voltage such as is caused by frictional static electricity is applied to its drain region. This breakdown of the gate insulating film cannot be prevented merely by limiting the voltage level applied to the drain region to a level below the breakdown withstand voltage of the gate insulating film. The reason for this is that even with such voltage limiting, the breakdown of the gate insulating film can still occur when local heating is generated by a relatively large breakdown current flowing through the drain junction. To prevent such a breakdown of the gate insulating film, therefore, a resistance element for limiting the breakdown current is connected in series with the drain region of the transmission gate MOSFET.
摘要:
A light-emitting device includes a substrate, a reflecting layer formed on the substrate, a light-emitting element placed on the reflecting layer, and a sealing resin layer that covers the reflecting layer and the light-emitting element. The oxygen permeability of the sealing resin layer is equal to or lower than 1200 cm3/(m2·day·atm), and the ratio of the area of the reflecting layer covered by the sealing resin layer to the entire area on the resin substrate covered by the sealing resin layer is between 30% and 75% inclusive.
摘要:
Provided is a controller for use with a gas turbine engine, which ensures a stable combustion regardless of the deterioration of the catalyst and elevated characteristics of the exhaust gas. The controller 6 is used in the engine which comprises a combustor 2 for combusting a mixture of compressed air from a compressor 1 and a fuel under the existence of catalyst, the combustor having a catalytic combustion unit 21 bearing the catalyst and a pre-burner 7 provided on an upstream side of the catalytic combustion unit with respect to a flow of the compressed air for supplying and combusting a pre-heating fuel PF with the compressed air CA. The controller comprises a memory 6c for memorizing an initial temperature difference D between inlet and outlet temperatures t1, t2 measured at inlet and outlet of the catalytic combustion unit with non-deteriorated catalyst accommodated therein, and a pre-burner control for calculating a present temperature difference between the inlet and outlet temperatures measured in an operation of the gas turbine engine and controlling an amount of the fuel to be supplied to the pre-burner according to a deterioration Δd of the catalyst which is provided by a difference between the initial and present temperature differences D and d.
摘要:
An iron carrier for an electrophotographic developer, the carrier having a mean particle diameter of 25 to 40 .mu.m, a magnetization of at least 160 emu/g at 3000 Oe, an apparent density of 3.0 to 4.2 g/cm.sup.3, a percentage sphericity of at least 80%, and a specific surface area of at least 350 cm.sup.2 /g as determined by an air permeation method; a process for preparing the carrier by a plasma method; and an electrophotographic developer comprising the carrier.
摘要:
There is provided in connection with a semiconductor memory, such as of the pseudostatic RAM, a layout of the circuit components thereof including a method of testing the memory. There is provided an oscillation circuit which is capable of withstanding bumping of the power source voltage (varying) which effects stabilization regarding the operation of the circuits included therewith including a refresh timer circuit. There is also provided for testing a refresh timer circuit and a semiconductor memory which includes a refresh timer circuit. There is further provided for an output buffer which is capable of high speed operation with respect to memory data readout, a voltage generating circuit which is capable of stable operation and a fuse circuit, such as provided in connection with redundant circuitry in the memory and which is characterized as having a configuration of a fuse logic gate circuit employing complementary channel MOSFETs together with a fuse. With respect to the semiconductor memory, such as the pseudostatic RAM, the initial count of the refresh timer counter circuit of the refresh timer circuit can be set at an optional value by applying a signal to an address input terminal, and a test mode can be effected in which the refresh period can be set at an optional value by accordingly applying a test control signal to a predetermined external terminal. Therefore, the discharge current of the oscillation circuit capacitor associated with the refresh timer circuit becomes stabilized, noting the particular layout arrangement regarding the polycrystalline silicon layer forming the resistor of the oscillation circuit, and the fact that same parasitic capacitances are effectively connected between the polycrystalline silicon resistor and the supply voltage of the circuit and between the polycrystalline silicon resistor and the ground potential of the circuit thereby cancelling any variation of the output of the power source. Therefore, variation of the oscillation frequency of the oscillation circuit attributable to the bumping of the power source can be effectively suppressed.
摘要:
A pressure slip casing apparatus for producing a sanitary ware such as a toilet bowl, comprises lifting hydraulic cylinder means secured to said top member of a stationary frame; a pair of suspending devices supported by a base plate attached to said lifting hydraulic cylinder means; an interlocking mechanism for operatively connecting said suspending devices to each other; and a hydraulic cylinder device for moving a suspending devices towards and away from each other through the action of said interlocking mechanism. A mold part and a core mold part are attached to said base of said stationary frame and to the lower surface of said base plate, respectively. Side mold parts are suspended by said suspending devices so as to be brought and aligned together when said suspending devices are moved towards each other, and said core mold part and said side mold parts in assembled state are adapted to be lowered by said lifting hydraulic cylinder means so that said side mold parts and said core mold parts are sequentially assembled with said bottom mold part and then clamped therewith.
摘要:
A mask-programmed ROM includes depletion type load MOSFETs provided between data lines in a memory array and a power supply voltage, the MOSFETs having a ground potential of the circuit applied to their gates. Reading of data is carried out by an amplifying MOSFET which supplies a current to a selected data line through a depletion type MOSFET which is supplied at its gate with the circuit ground potential. Thus, bias voltages which are respectively applied to the data lines and a sense amplifier which receives a signal read out from a selected data line are made equal to each other, thereby achieving a high-speed read operation.