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    PROCESSING CHAMBER WITH COOLED GAS DELIVERY LINE
    2.
    发明申请
    PROCESSING CHAMBER WITH COOLED GAS DELIVERY LINE 审中-公开
    具有冷却气体输送管线的加工室

    公开(公告)号：US20120279943A1

    公开(公告)日：2012-11-08

    申请号：US13462939

    申请日：2012-05-03

    申请人： Helinda Nominanda ,  Tae Kyung Won ,  Seon-Mee Cho ,  Beom Soo Park ,  Soo Young Choi

    发明人： Helinda Nominanda ,  Tae Kyung Won ,  Seon-Mee Cho ,  Beom Soo Park ,  Soo Young Choi

    IPC分类号： C23C16/50 ,  B05C9/00 ,  B44C1/22 ,  C23C16/511

    CPC分类号： C23C16/45572 ,  C23C16/511

    摘要： A method and apparatus for processing a substrate is provided. In one embodiment, the apparatus is in the form of a processing chamber that includes a chamber body having a processing volume defined therein. A substrate support, a gas delivery tube assembly and a plasma line source are disposed in the processing volume. The gas delivery tube assembly includes an inner tube is disposed in an outer tube. The inner tube has a passage for flowing a cooling fluid therein. The outer tube has a plurality of gas distribution apertures for providing processing gas into the processing volume.

    摘要翻译： 提供了一种用于处理衬底的方法和设备。 在一个实施例中，该装置是处理室的形式，其包括其中限定有处理容积的室主体。 衬底支撑件，气体输送管组件和等离子体线源设置在处理体积中。 气体输送管组件包括内管，其设置在外管中。 内管具有用于在其中流动冷却流体的通道。 外管具有多个气体分配孔，用于将处理气体提供到处理容积中。

    Plasma uniformity control by gas diffuser hole design
    4.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US08083853B2

    公开(公告)日：2011-12-27

    申请号：US10889683

    申请日：2004-07-12

    申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

    CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    Gate dielectric film with controlled structural and physical properties over a large surface area substrate
    5.
    发明申请
    Gate dielectric film with controlled structural and physical properties over a large surface area substrate 审中-公开
    具有在大表面积衬底上具有受控结构和物理性质的栅介质膜

    公开(公告)号：US20110095402A1

    公开(公告)日：2011-04-28

    申请号：US12930230

    申请日：2010-12-30

    申请人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

    发明人： Beom Soo Park ,  Soo Young Choi ,  Tae Kyung Won ,  John M. White

    IPC分类号： H01L29/51

    CPC分类号： E06C7/48 ,  E06C7/482 ,  E06C7/484

    摘要： An α-SiNx:H gate dielectric film deposited over a substrate surface having a surface area larger than 100 cm×100 cm, wherein said α-SiNx:H gate dielectric film exhibits a film thickness which varies by less than about 20% over said surface area, a film density which varies by less than about 17% over said surface area, and wherein said film exhibits a Si—H bonded structure content of less than about 15 atomic % over said surface area.

    摘要翻译： 一种沉积在表面积大于100cm×100cm的衬底表面上的α-SiNx：H栅极电介质膜，其中所述α-SiNx：H栅极电介质膜的膜厚比所述 表面积，比所述表面积变化小于约17％的膜密度，并且其中所述膜在所述表面积上表现出小于约15原子％的Si-H键合结构含量。

    Apparatus for depositing a uniform silicon film and methods for manufacturing the same
    6.
    发明授权
    Apparatus for depositing a uniform silicon film and methods for manufacturing the same 有权
    用于沉积均匀硅膜的设备及其制造方法

    公开(公告)号：US08142606B2

    公开(公告)日：2012-03-27

    申请号：US11759542

    申请日：2007-06-07

    申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

    发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

    CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

    摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

    摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

    Microcrystalline silicon thin film transistor
    7.
    发明授权
    Microcrystalline silicon thin film transistor 失效
    微晶硅薄膜晶体管

    公开(公告)号：US07833885B2

    公开(公告)日：2010-11-16

    申请号：US12323872

    申请日：2008-11-26

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    IPC分类号： H01L21/00

    CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

    摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

    MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR
    8.
    发明申请
    MICROCRYSTALLINE SILICON THIN FILM TRANSISTOR 失效
    微晶硅薄膜晶体管

    公开(公告)号：US20090200552A1

    公开(公告)日：2009-08-13

    申请号：US12323872

    申请日：2008-11-26

    申请人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    发明人： Tae Kyung Won ,  Soo Young Choi ,  Dong Kil Yim ,  Jriyan Jerry Chen ,  Beom Soo Park

    IPC分类号： H01L29/04 ,  H01L21/20 ,  H01L21/00

    CPC分类号： H01L29/04 ,  C23C16/26 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L29/66742 ,  H01L29/7866

    摘要： Methods for forming a microcrystalline silicon layer in a thin film transistor structure are provided. In one embodiment, a method for forming a microcrystalline silicon layer includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and an argon gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas greater than about 100:1, wherein a volumetric flow ratio of the argon gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 5 percent and about 40 percent, and maintaining a process pressure of the gas mixture within the processing chamber at greater than about 3 Torr while depositing a microcrystalline silicon layer on the substrate.

    摘要翻译： 提供了在薄膜晶体管结构中形成微晶硅层的方法。 在一个实施例中，一种形成微晶硅层的方法包括在处理室中提供衬底，将具有氢基气体，硅基气体和氩气的气体混合物供应到处理室中，所述气体混合物具有 氢基气体与硅基气体的体积流量比大于约100:1，其中氩气与氢气体和硅基气体的总合并流量的体积流量比在 约5％和约40％，并且在处理室内的气体混合物的工艺压力保持在大于约3Torr，同时在衬底上沉积微晶硅层。

    Plasma uniformity control by gas diffuser hole design
    9.
    发明授权
    Plasma uniformity control by gas diffuser hole design 有权
    通过气体扩散器孔设计的等离子体均匀性控制

    公开(公告)号：US09200368B2

    公开(公告)日：2015-12-01

    申请号：US13207227

    申请日：2011-08-10

    申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

    IPC分类号： C23C16/455 ,  C23C16/34 ,  C23C16/509 ,  H01J37/32

    CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

    摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

    摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

    Low temperature thin film transistor process, device property, and device stability improvement
    10.
    发明授权
    Low temperature thin film transistor process, device property, and device stability improvement 有权
    低温薄膜晶体管工艺，器件性能和器件稳定性的提高

    公开(公告)号：US08110453B2

    公开(公告)日：2012-02-07

    申请号：US12425228

    申请日：2009-04-16

    申请人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

    发明人： Ya-Tang Yang ,  Beom Soo Park ,  Tae Kyung Won ,  Soo Young Choi ,  John M. White

    IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L21/20 ,  H01L29/786

    CPC分类号： H01L29/4908 ,  H01L29/66765

    摘要： A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.

    摘要翻译： 提供一种用于形成薄膜晶体管的方法和装置。 形成栅电介质层，其可以是双层，第一层以低速率沉积，第二层以高速率沉积。 在一些实施例中，第一介电层是富硅的氮化硅层。 形成有源层，其也可以是双层，第一有源层以低速率沉积，第二有效层以高速率沉积。 本文所述的薄膜晶体管在应力下具有优异的迁移率和稳定性。