公开(公告)号：US6101164A

公开(公告)日：2000-08-08

申请号：US760420

申请日：1996-12-04

申请人： Hiroyuki Kado ,  Takao Tohda ,  Osamu Kusumoto ,  Kazuo Yokoyama

发明人： Hiroyuki Kado ,  Takao Tohda ,  Osamu Kusumoto ,  Kazuo Yokoyama

IPC分类号： G01Q30/04 ,  G11B5/00 ,  G11B9/00 ,  G11B11/00 ,  G11B11/105 ,  G11B13/04

CPC分类号： G11B5/00 ,  B82Y10/00 ,  G11B11/007 ,  G11B11/10506 ,  G11B11/10508 ,  G11B11/10517 ,  G11B11/10532 ,  G11B9/14 ,  G11B9/1436 ,  G11B9/1472 ,  G11B9/149 ,  G11B13/045 ,  Y10S977/947

摘要： An information recording and reproducing device includes an inorganic recording medium having at least one material selected from the group consisting of a phase change material, a shape changing material and a magnetic material. A conductive probe, which is proximate to or contacting a recording surface of the recording medium, is movable relative to the recording medium. Information is recorded by heating the recording medium in the area where the conductive probe is proximate or contacting to change a physical state therein. The area of the recording medium where the conductive probe is proximate or contacting is heated by applying voltage between the conductive probe and the recording medium.

摘要翻译： 信息记录和再现装置包括具有选自由相变材料，形状改变材料和磁性材料组成的组中的至少一种材料的无机记录介质。 靠近或接触记录介质的记录表面的导电探针可相对于记录介质移动。 通过在导电探针接近或接触的区域中加热记录介质以改变其中的物理状态来记录信息。 通过在导电探针和记录介质之间施加电压来加热导电探针接近或接触的记录介质的区域。

公开(公告)号：US5381753A

公开(公告)日：1995-01-17

申请号：US55728

申请日：1993-04-30

申请人： Michio Okajima ,  Osamu Kusumoto ,  Takao Tohda ,  Kazuo Yokoyama ,  Motoshi Shibata

发明人： Michio Okajima ,  Osamu Kusumoto ,  Takao Tohda ,  Kazuo Yokoyama ,  Motoshi Shibata

IPC分类号： C30B29/62 ,  C30B11/00 ,  C30B11/12 ,  H01L29/06 ,  C30B23/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C30B11/00 ,  C30B11/12 ,  C30B29/60

摘要： A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

摘要翻译： 制造方法提供了具有很少的载流子阱中心和光吸收水平的精细结构，并且在至少在二维平面内具有任意构型的量子线和量子盒中得到应用。 该制造方法包括以下步骤：将锋利的尖端保持在靠近基板1的表面并且具有构成从顶部蒸发的尖端的金属。 或者，提供包含在环境蒸气中的金属或由隧道电流等分解的溶液。 金属在衬底表面局部沉积。 通过气相 - 液相 - 固相反应在局部沉积区域上生长精细结晶的晶体。

公开(公告)号：US5835312A

公开(公告)日：1998-11-10

申请号：US743360

申请日：1996-11-04

申请人： Akio Kuroe ,  Akio Murata ,  Kazuo Yokoyama ,  Osamu Kusumoto

发明人： Akio Kuroe ,  Akio Murata ,  Kazuo Yokoyama ,  Osamu Kusumoto

IPC分类号： G11B5/00 ,  G11B5/012 ,  G11B5/02 ,  G11B5/127 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  G11B5/48 ,  G11B5/58 ,  G11B9/00 ,  G11B9/04

CPC分类号： B82Y10/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/1278 ,  G11B5/3106 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/33 ,  G11B5/332 ,  G11B5/4826 ,  G11B5/484 ,  G11B5/58 ,  G11B2005/0005 ,  G11B9/14 ,  G11B9/1418

摘要： The present invention relates to a magnetic head for recording and reproducing signals from a magnetic recording medium, wherein the magnetic head comprises a stylus having a pair of electrodes, a conductive multilayer film having a staircase-shaped section, and a magnetic body formed on the multilayer film. The magnetic head further comprises an excitation conductive thin film disposed so as to surround the stylus, a magnetic yoke forming a closed magnetic loop together with a magnetic recording medium and the stylus, and an anti-abrasive film formed on the magnetic yoke so as to oppose the recording medium. During recording, a signal current is supplied to the excitation conductive thin film to generate a recording magnetic field from the end of the stylus. During reproduction, a high-frequency voltage is applied across the electrodes, and a magnetic impedance change of the stylus, caused by a signal magnetism on the recording medium, is detected. The relative position of the magnetic head to the recording medium is controlled by deflecting a cantilever according to a capacitance between the magnetic head and the recording medium. Accordingly, the magnetic head of the present invention is capable of remarkably enhancing recording densities and data transfer rates.

摘要翻译： 本发明涉及一种用于记录和再现来自磁记录介质的信号的磁头，其中磁头包括具有一对电极的触针，具有阶梯形截面的导电多层膜和形成在其上的磁体 多层膜。 磁头还包括设置成围绕触针的激励导电薄膜，与磁记录介质和触针一起形成闭合磁环的磁轭，以及形成在磁轭上的抗磨膜，以便 对着记录介质。 在记录期间，向激励导电薄膜提供信号电流以从触针的端部产生记录磁场。 在再现期间，在电极之间施加高频电压，并且检测由记录介质上的信号磁性引起的触针的磁阻抗变化。 通过根据磁头和记录介质之间的电容使悬臂偏转来控制磁头与记录介质的相对位置。 因此，本发明的磁头能够显着提高记录密度和数据传送速率。

公开(公告)号：US08933463B2

公开(公告)日：2015-01-13

申请号：US13780876

申请日：2013-02-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H01L29/16 ,  H01L29/66 ,  H01L29/78 ,  H03K17/14 ,  H01L29/45

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括MISFET的半导体元件通过外延沟道层在相反方向上表现出二极管特性。 半导体元件包括：第一导电类型的碳化硅半导体衬底，第一导电类型的半导体层，第二导电类型的主体区域，第一导电类型的源极区域，与身体区域接触的外延沟道层， 源电极，栅极绝缘膜，栅电极和漏电极。 如果施加到栅电极的电压小于阈值电压，则半导体元件用作二极管，其中电流从源电极通过外延沟道层流到漏电极。 该二极管的导通电压的绝对值小于由体区和第一碳化硅半导体层形成的体二极管的导通电压。

公开(公告)号：US08283973B2

公开(公告)日：2012-10-09

申请号：US13389555

申请日：2010-08-09

申请人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

发明人： Koichi Hashimoto ,  Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Shun Kazama

IPC分类号： G05F3/02

CPC分类号： H01L29/7828 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7838 ,  H02M7/5387 ,  Y02B70/1483

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果 施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值 该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。

公开(公告)号：US20120057386A1

公开(公告)日：2012-03-08

申请号：US13266271

申请日：2010-04-28

申请人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

发明人： Kazuhiro Adachi ,  Osamu Kusumoto ,  Masao Uchida ,  Koichi Hashimoto ,  Shun Kazama

IPC分类号： H02M7/537 ,  H01L29/24

CPC分类号： H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7805 ,  H01L29/7827 ,  H01L29/7828 ,  H03K17/145

摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.

摘要翻译： 包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60， 栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过 外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值 由所述体区和所述第一碳化硅半导体层形成。

公开(公告)号：US07846828B2

公开(公告)日：2010-12-07

申请号：US12338395

申请日：2008-12-18

申请人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

发明人： Osamu Kusumoto ,  Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Masahiro Hagio ,  Kazuyuki Sawada

IPC分类号： H01L21/28 ,  H01L21/44

CPC分类号： H01L29/7828 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/30625 ,  H01L29/1029 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/7838 ,  H01L29/812

摘要： Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate, annealing for activating the implanted dopant ions is performed, and then the carbon film is removed. Thus, a smooth surface having hardly any surface roughness caused by the annealing is obtained. Furthermore, if a channel layer is epitaxially grown, the surface roughness of the channel layer is smaller than that of the underlying layer. Since the channel layer having a smooth surface is provided, it is possible to obtain a MISFET with a high current drive capability.

摘要翻译： 进行离子注入以在SiC衬底上的高电阻SiC层的部分中形成p阱区域和源极区域，并且在衬底上沉积碳膜。 通过沉积在基板上的碳膜，进行用于激活注入的掺杂离子的退火，然后除去碳膜。 因此，获得了退火几乎没有表面粗糙度的光滑表面。 此外，如果沟道层外延生长，则沟道层的表面粗糙度小于下层的表面粗糙度。 由于提供了具有平滑表面的沟道层，所以可以获得具有高电流驱动能力的MISFET。

公开(公告)号：US07462540B2

公开(公告)日：2008-12-09

申请号：US10553845

申请日：2005-01-28

申请人： Kunimasa Takahashi ,  Makoto Kitabatake ,  Kenya Yamashita ,  Masao Uchida ,  Osamu Kusumoto ,  Ryoko Miyanaga

发明人： Kunimasa Takahashi ,  Makoto Kitabatake ,  Kenya Yamashita ,  Masao Uchida ,  Osamu Kusumoto ,  Ryoko Miyanaga

IPC分类号： H01L21/00

CPC分类号： H01L21/046

摘要： A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film (2) formed on a silicon carbide substrate (1), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer (5) on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer (5) and at a temperature higher than in the step of forming the carbon layer (5).

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将离子注入形成在碳化硅衬底（1）上的碳化硅薄膜（2）中，在减压气氛中加热碳化硅衬底以形成碳层（5） 在碳化硅衬底的表面上，并且在比形成碳层（5）的步骤高的压力的气氛中，并且在高于形成步骤的温度的气氛中，相对于碳化硅衬底进行激活退火 碳层（5）。

公开(公告)号：US20060055027A1

公开(公告)日：2006-03-16

申请号：US10536828

申请日：2004-09-06

申请人： Makoto Kitabatake ,  Osamu Kusumoto ,  Nasao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita

发明人： Makoto Kitabatake ,  Osamu Kusumoto ,  Nasao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita

IPC分类号： H01L23/34

CPC分类号： H01L23/3735 ,  H01L23/3672 ,  H01L23/4334 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63, first and second intermediate members 65 and 68a, a heat conducting member 66, a radiation fin 67, and an encapsulating material 68 for encapsulating the semiconductor chip 61, the first and second intermediate member 65 and 68a and the heat conducting member 66. The tips of the base materials 62 and 63 work respectively as external connection terminals 62a and 63a. The second intermediate member 68a is made of a material with lower heat conductivity than the first intermediate member 65, and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68a than in the first intermediate member.

摘要翻译： 半导体装置包括半导体芯片61，其包括使用宽带隙半导体的功率半导体器件，基底材料62和63，第一和第二中间构件65和68a，导热构件66，辐射翅片67和封装 用于封装半导体芯片61，第一和第二中间构件65和68a以及导热构件66的材料68。 基材62和63的尖端分别作为外部连接端子62a和63a工作。 第二中间构件68a由比第一中间构件65低导热性的材料制成，并且与第一中间构件相比，第二中间构件68a的与半导体芯片61的接触面积更大。

公开(公告)号：US06995396B2

公开(公告)日：2006-02-07

申请号：US10279119

申请日：2002-10-24

申请人： Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Kenya Yamashita ,  Ryoko Miyanaga

发明人： Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Kenya Yamashita ,  Ryoko Miyanaga

IPC分类号： H01L31/0312 ,  H01L29/80 ,  H01L31/112 ,  H01L29/76 ,  H01L27/095

CPC分类号： H01L29/365 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068

摘要： A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow rate of 1 mL/min. at a substrate temperature of 1200° C. through 1600° C. Subsequently, the diluent gas is changed to a hydrogen gas at a temperature of 1600° C., and material gases of Si and carbon are supplied with nitrogen intermittently supplied, so as to deposit SiC thin films on the SiC bulk substrate. In a flat δ-doped multilayered structure thus formed, an average height of macro steps formed on the top face and on interfaces therein is 30 nm or less. When the resultant substrate is used, a semiconductor device with a high breakdown voltage and high mobility can be realized.