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公开(公告)号:US08105875B1
公开(公告)日:2012-01-31
申请号:US12904835
申请日:2010-10-14
申请人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L21/50
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
摘要翻译: 一种方法包括提供包括衬底的中介层晶片,以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔(TSV)。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后,在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。
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公开(公告)号:US08319349B2
公开(公告)日:2012-11-27
申请号:US13342583
申请日:2012-01-03
申请人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L23/48
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
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公开(公告)号:US20120238057A1
公开(公告)日:2012-09-20
申请号:US13488188
申请日:2012-06-04
申请人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L21/60
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
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公开(公告)号:US08759150B2
公开(公告)日:2014-06-24
申请号:US13488188
申请日:2012-06-04
申请人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L21/50
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
摘要翻译: 一种方法包括提供包括衬底的中介层晶片,以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔(TSV)。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后,在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。
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公开(公告)号:US20120104578A1
公开(公告)日:2012-05-03
申请号:US13342583
申请日:2012-01-03
申请人: Hsien-Pin Hu , Chen-Hu Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
发明人: Hsien-Pin Hu , Chen-Hu Yu , Shin-Puu Jeng , Shang-Yun Hou , Jing-Cheng Lin , Wen-Chih Chiou , Hung-Jung Tu
IPC分类号: H01L23/495
CPC分类号: H01L21/561 , H01L21/486 , H01L23/147 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L24/97 , H01L25/0655 , H01L2224/05001 , H01L2224/05027 , H01L2224/05571 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599 , H01L2224/05099
摘要: A method includes providing an interposer wafer including a substrate, and a plurality of through-substrate vias (TSVs) extending from a front surface of the substrate into the substrate. A plurality of dies is bonded onto a front surface of the interposer wafer. After the step of bonding the plurality of dies, a grinding is performed on a backside of the substrate to expose the plurality of TSVs. A plurality of metal bumps is formed on a backside of the interposer wafer and electrically coupled to the plurality of TSVs.
摘要翻译: 一种方法包括提供包括衬底的中介层晶片,以及从衬底的前表面延伸到衬底中的多个贯通衬底通孔(TSV)。 多个管芯结合到插入件晶片的前表面上。 在结合多个模具的步骤之后,在基板的背面进行研磨以暴露多个TSV。 多个金属凸块形成在插入器晶片的背面并电耦合到多个TSV。
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公开(公告)号:US08693163B2
公开(公告)日:2014-04-08
申请号:US12873931
申请日:2010-09-01
申请人: An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
发明人: An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
IPC分类号: H01L29/92 , H01L21/768
CPC分类号: H01L28/40 , H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/14 , H01L28/92 , H01L2224/0401 , H01L2224/05008 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/131 , H01L2224/13147 , H01L2224/1403 , H01L2224/14181 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2224/05552 , H01L2924/00
摘要: A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.
摘要翻译: 一种装置包括具有与前表面相对的前表面和后表面的基底。 电容器形成在衬底中,并包括第一电容器板; 围绕所述第一电容器板的第一绝缘层; 以及环绕所述第一绝缘层的第二电容器板。 第一电容器板,第一绝缘层和第二电容器板中的每一个从基板的前表面延伸到后表面。
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公开(公告)号:US20130092935A1
公开(公告)日:2013-04-18
申请号:US13272004
申请日:2011-10-12
申请人: Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
发明人: Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
CPC分类号: H01L22/32 , H01L23/3128 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15192 , H01L2924/15311 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.
摘要翻译: 插入器包括在插入件的第一侧上的第一表面和在插入件的第二侧上的第二表面,其中第一和第二侧是相对的两侧。 第一探针垫设置在第一表面。 电连接器设置在第一表面处,其中电连接器被配置为用于接合。 通孔设置在插入器中。 前侧连接设置在插入件的第一侧上,其中前侧连接将通孔电连接到探针垫。
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公开(公告)号:US08797057B2
公开(公告)日:2014-08-05
申请号:US13025931
申请日:2011-02-11
申请人: Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Shin-Puu Jeng , Chen-Hua Yu , Chao-Hsiang Yang
发明人: Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Shin-Puu Jeng , Chen-Hua Yu , Chao-Hsiang Yang
IPC分类号: G01R31/00
CPC分类号: G01R31/2896 , G01R1/0416 , G01R31/2601 , G01R31/2884 , G01R31/2886 , G01R31/2889 , G01R31/2893 , H01L22/32 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/02377 , H01L2224/0392 , H01L2224/0401 , H01L2224/05027 , H01L2224/05147 , H01L2224/05552 , H01L2224/05568 , H01L2224/05655 , H01L2224/0614 , H01L2224/0616 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/13005 , H01L2224/13083 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13139 , H01L2224/13147 , H01L2224/13155 , H01L2224/14131 , H01L2224/16238 , H01L2924/20752 , H01L2924/00012 , H01L2924/00014 , H01L2924/01047 , H01L2924/014
摘要: Test structures for performing electrical tests of devices under one or more microbumps are provided. Each test structure includes at least one microbump pad and a test pad. The microbump pad is a part of a metal pad connected to an interconnect for a device. A width of the microbump pad is equal to or less than about 50 μm. The test pad is connected to the at least one microbump pad. The test pad has a size large enough to allow circuit probing of the device. The test pad is another part of the metal pad. A width of the test pad is greater than the at least one microbump pad.
摘要翻译: 提供用于对一个或多个微丸下的装置进行电测试的测试结构。 每个测试结构包括至少一个微型块和测试垫。 微型焊盘是与设备的互连件连接的金属焊盘的一部分。 微型焊盘的宽度等于或小于约50μm。 测试垫连接到至少一个微型块。 测试垫的尺寸足够大以允许设备的电路探测。 测试垫是金属垫的另一部分。 测试垫的宽度大于至少一个微小块垫。
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公开(公告)号:US09128123B2
公开(公告)日:2015-09-08
申请号:US13198223
申请日:2011-08-04
申请人: Tzuan-Horng Liu , Chen-Hua Yu , Hsien-Pin Hu , Tzu-Yu Wang , Wei-Cheng Wu , Shang-Yun Hou , Shin-Puu Jeng
发明人: Tzuan-Horng Liu , Chen-Hua Yu , Hsien-Pin Hu , Tzu-Yu Wang , Wei-Cheng Wu , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号: H01L23/528 , G01R1/073 , H01L21/66 , H01L21/56 , H01L21/683 , H01L23/498
CPC分类号: H01L22/32 , G01R1/07378 , H01L21/4853 , H01L21/486 , H01L21/561 , H01L21/6835 , H01L22/30 , H01L22/34 , H01L23/49811 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/5226 , H01L23/585 , H01L2221/68331 , H01L2224/05001 , H01L2224/05026 , H01L2224/05572 , H01L2224/056 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81192 , H01L2224/81815 , H01L2224/97 , H01L2924/01322 , H01L2924/15311 , H01L2924/00014 , H01L2224/81 , H01L2924/00 , H01L2224/05124 , H01L2224/05147
摘要: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.
摘要翻译: 本公开的实施例是包括插入器的结构。 插入器具有沿着插入件的周边延伸的测试结构,并且测试结构的至少一部分处于第一再分配元件中。 第一再分配元件位于中介层的衬底的第一表面上。 测试结构是中间的并且电耦合到至少两个探针焊盘。
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公开(公告)号:US08878182B2
公开(公告)日:2014-11-04
申请号:US13272004
申请日:2011-10-12
申请人: Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
发明人: Tzu-Yu Wang , Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Hsien-Pin Hu , Wei-Cheng Wu , Li-Han Hsu , Meng-Han Lee
IPC分类号: H01L23/58 , H01L21/66 , H01L23/498 , H01L23/538 , H01L23/00 , H01L25/065 , H01L23/31
CPC分类号: H01L22/32 , H01L23/3128 , H01L23/49822 , H01L23/49827 , H01L23/49833 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/15192 , H01L2924/15311 , H01L2924/014 , H01L2924/00012 , H01L2924/00
摘要: An interposer includes a first surface on a first side of the interposer and a second surface on a second side of the interposer, wherein the first and the second sides are opposite sides. A first probe pad is disposed at the first surface. An electrical connector is disposed at the first surface, wherein the electrical connector is configured to be used for bonding. A through-via is disposed in the interposer. Front-side connections are disposed on the first side of the interposer, wherein the front-side connections electrically couple the through-via to the probe pad.
摘要翻译: 插入器包括在插入件的第一侧上的第一表面和在插入件的第二侧上的第二表面,其中第一和第二侧是相对的两侧。 第一探针垫设置在第一表面。 电连接器设置在第一表面处,其中电连接器被配置为用于接合。 通孔设置在插入器中。 前侧连接设置在插入件的第一侧上,其中前侧连接将通孔电连接到探针垫。
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