Printed circuit board having solder bridges for electronically connecting conducting pads and method of fabricating solder bridges
    1.
    发明申请
    Printed circuit board having solder bridges for electronically connecting conducting pads and method of fabricating solder bridges 失效
    具有用于电连接导电焊盘的焊接桥的印刷电路板和制造焊接桥的方法

    公开(公告)号:US20050044702A1

    公开(公告)日:2005-03-03

    申请号:US10654177

    申请日:2003-09-03

    IPC分类号: H05K1/00 H05K3/34 H05K1/03

    摘要: A method of fabricating a substantially zero signal degradation electrical connection on a printed circuit board includes providing a printed circuit board defined by a dielectric structure core. The dielectric structure core has a first surface, which includes a first connecting pad having an edge and a second connecting pad having an edge separated from an adjacent to the edge of the first conducting pad. The edges of the first and second conducting pads define therebetween a surface area of the first surface. A solder paste is applied on the first and second conducting pads and on the first surface of the dielectric structure core. The solder paste at least partially covers the surface area of the first surface between the edges of the first and second conducting pads, thereby forming a substantially zero signal degradation electrical connection between the first and second conducting pads.

    摘要翻译: 在印刷电路板上制造基本上零信号劣化电连接的方法包括提供由电介质结构芯限定的印刷电路板。 电介质结构芯具有第一表面,其包括具有边缘的第一连接焊盘和具有与邻近第一导电焊盘的边缘分离的边缘的第二连接焊盘。 第一和第二导电垫的边缘在其间界定第一表面的表面积。 在第一和第二导电焊盘和介电结构芯的第一表面上施加焊膏。 焊膏至少部分地覆盖第一和第二导电焊盘的边缘之间的第一表面的表面积,从而在第一和第二导电焊盘之间形成基本为零的信号劣化电连接。

    Verify before program resume for memory devices

    公开(公告)号:US10445226B2

    公开(公告)日:2019-10-15

    申请号:US13814917

    申请日:2011-08-04

    摘要: A method of programming data into a memory device including an array of memory cells is disclosed. The method comprises receiving at least one program command that addresses a number of the memory cells for a programming operation to program data in the memory cells. The at least one program command is executed by iteratively carrying out at least one program/verify cycle to incrementally program the addressed memory cells with the program data. A secondary command may be selectively received after initiating but before completing the programming operation. The programming operation may be selectively resumed by first verifying the memory cells, then carrying out at least one program/verify cycle.

    Method and apparatus for calibrating write timing in a memory system
    4.
    发明授权
    Method and apparatus for calibrating write timing in a memory system 有权
    用于校准存储器系统中的写入定时的方法和装置

    公开(公告)号:US09263103B2

    公开(公告)日:2016-02-16

    申请号:US12049928

    申请日:2008-03-17

    摘要: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period. In a variation of this system, the phase detector on the memory chip is configured to receive signals including a clock signal, a marking signal and a data-strobe signal from the memory controller, wherein the marking signal includes a pulse which marks a specific clock cycle in the clock signal. In this variation, the phase detector is configured to use the marking signal to window the specific clock cycle in the clock signal, and to use the data-strobe signal to capture the windowed clock signal, thereby creating a feedback signal which is returned to the memory controller to facilitate calibration of the timing relationship.

    摘要翻译: 描述了校准执行写操作所涉及的信号之间的时序关系的系统。 该系统包括耦合到一组存储器芯片的存储器控​​制器,其中每个存储器芯片包括相位检测器,该相位检测器被配置为在数据选通信号和存储器芯片之间从存储器控制器接收的时钟信号之间校准相位关系 一个写操作。 此外,存储器控制器被配置为执行一个或多个写入读取验证操作以校准数据选通信号和时钟信号之间的时钟周期关系,其中写入 - 读取验证操作涉及改变在 相对于时钟信号的数据选通信号乘以时钟周期的倍数。 在该系统的变型中,存储器芯片上的相位检测器被配置为从存储器控制器接收包括时钟信号,标记信号和数据选通信号的信号,其中标记信号包括标记特定时钟的脉冲 在时钟信号周期。 在该变型中,相位检测器被配置为使用标记信号来在时钟信号中画出特定时钟周期,并且使用数据选通信号来捕获窗口化的时钟信号,从而产生返回到 内存控制器便于校准时序关系。

    METHOD AND APPARATUS FOR CALIBRATING WRITE TIMING IN A MEMORY SYSTEM
    5.
    发明申请
    METHOD AND APPARATUS FOR CALIBRATING WRITE TIMING IN A MEMORY SYSTEM 有权
    用于在记忆系统中校准写入时序的方法和装置

    公开(公告)号:US20150255144A1

    公开(公告)日:2015-09-10

    申请号:US14698755

    申请日:2015-04-28

    IPC分类号: G11C11/4076 G11C11/409

    摘要: A system that calibrates timing relationships between signals involved in performing write operations is described. This system includes a memory controller which is coupled to a set of memory chips, wherein each memory chip includes a phase detector configured to calibrate a phase relationship between a data-strobe signal and a clock signal received at the memory chip from the memory controller during a write operation. Furthermore, the memory controller is configured to perform one or more write-read-validate operations to calibrate a clock-cycle relationship between the data-strobe signal and the clock signal, wherein the write-read-validate operations involve varying a delay on the data-strobe signal relative to the clock signal by a multiple of a clock period.

    摘要翻译: 描述了校准执行写操作所涉及的信号之间的时序关系的系统。 该系统包括耦合到一组存储器芯片的存储器控​​制器,其中每个存储器芯片包括相位检测器,该相位检测器被配置为在数据选通信号和存储器芯片之间从存储器控制器接收的时钟信号之间校准相位关系 一个写操作。 此外,存储器控制器被配置为执行一个或多个写入读取验证操作以校准数据选通信号和时钟信号之间的时钟周期关系,其中写入 - 读取验证操作涉及改变在 相对于时钟信号的数据选通信号乘以时钟周期的倍数。

    MEMORY ACCESS DURING MEMORY CALIBRATION
    9.
    发明申请
    MEMORY ACCESS DURING MEMORY CALIBRATION 有权
    存储器校验期间的存储器访问

    公开(公告)号:US20130227183A1

    公开(公告)日:2013-08-29

    申请号:US13883542

    申请日:2011-11-07

    IPC分类号: G06F13/16

    摘要: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

    摘要翻译: 一种多级存储器系统,其中在存储器控制器和一级存储器之间执行校准操作,同时数据在控制器和其他等级的存储器之间传送。 存储器控制器执行校准操作,其校准与存储器控制器和存储器的第一等级中的存储器件之间经由第一数据总线的数据传输有关的参数。 当控制器执行校准操作时,控制器还经由第二数据总线将存储器件中的数据与第二等级的存储器传送数据。

    Flash memory timing pre-characterization
    10.
    发明授权
    Flash memory timing pre-characterization 有权
    闪存定时预先表征

    公开(公告)号:US08484407B2

    公开(公告)日:2013-07-09

    申请号:US12809039

    申请日:2008-12-23

    IPC分类号: G06F12/00

    摘要: This disclosure provides a method of accurately determining expected transaction times associated with flash memory subdivisions, such as devices, blocks or pages. By performing a test transaction to program each bit of each such unit, the maximum expected programming time of each unit may be determined in advance and used for scheduling purposes. For example, in a straightforward implementation, a relatively accurate, empirically measured time limit may be identified and used to efficiently manage and schedule flash memory transactions without awaiting ultimate resolution of attempts to write to a non-responsive page. This disclosure also provides other uses of empirically-measured maximum flash memory transaction times, including via multiple memory modes and prioritized memory; for example, if a high performance mode is desired, low variation in flash memory transaction times may be tolerated, and units not satisfying these principles may be marked relatively quickly. A mechanism is also provided for recalibrating memory previously marked. By minimizing variability, flash memory can be applied to a broader range of designs and potentially to a broader set of main memory applications.

    摘要翻译: 本公开提供了一种准确地确定与诸如设备,块或页面之类的闪速存储器细分有关的预期交易时间的方法。 通过执行测试事务来对每个这样的单元的每个位进行编程,可以预先确定每个单元的最大预期编程时间并用于调度目的。 例如,在简单的实现中,可以识别相对精确的经验测量的时间限制并用于有效地管理和调度闪速存储器事务,而不等待最终解决写入非响应页面的尝试。 本公开还提供经验测量的最大闪存交易时间的其他用途,包括经由多个存储器模式和优先存储器; 例如,如果需要高性能模式,则可以容忍闪速存储器交易时间的低变化,并且可以相对快速地标记不满足这些原理的单元。 还提供了一种用于重新校准之前标记的存储器的机制。 通过最小化可变性,闪存可以应用于更广泛的设计,并可能应用于更广泛的主存储器应用。