摘要:
A semiconductor device, including a nickel layer formed on a semiconductor substrate and a solder layer formed on the nickel layer, and a method of manufacturing such a device are disclosed. The percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. The nickel layer is sputtered in a condition which a pressure of an argon discharge gas is at least 15 mTorr. The solder layer includes at least tin and lead, and the amount of tin is not more than 30% by weight. The adhesive strength of the resultant semiconductor device is strong.
摘要:
A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example.
摘要:
A brazing method which provides a braze joint having excellent corrosion resistance and a brazed structure including such a braze joint includes assembling a first member and a second member to be joined into a temporary assembly, the first member including a base plate made of a ferrous material and a diffusion suppressing layer laminated on the base plate and composed of a Ni—Cr alloy essentially including not less than about 15% and not greater than about 40% of Cr, the second member being disposed on the diffusion suppressing layer of the first member with intervention of a brazing material of a Cu—Ni alloy essentially including not less than about 10% and not greater than about 20% of Ni, and maintaining the temporary assembly at a temperature of not less than about 1,200° C. to fuse the brazing material and diffuse Ni atoms and Cr atoms into the fused brazing material from the diffusion suppressing layer to form the braze joint, causing the resulting brazing material of the braze joint to have an increased melting point due to the increase of the Ni and Cr contents of the braze joint to self-solidify the braze joint, and then cooling the resulting assembly.
摘要:
A metallic layer is provided on the surface of a ceramic body. A junction layer is provided on the metallic layer. The junction layer contains 40.about.98 wt % Cu and 2.about.20 wt % Ni. A conductive member is bonded to the metallic layer via the junction layer.
摘要:
A brazing method includes assembling a first member and a second member, the first member including a base plate made of a ferrous material and a diffusion suppressing layer laminated on the base plate and made of a Ni—Cr alloy including more than about 15% and less than about 40% of Cr, the second member being disposed on the first member with a brazing material of a Cu—Ni alloy including more than about 10% and less than about 20% of Ni therebetween, and maintaining the temporary assembly at a temperature of more than about 1,200° C. to fuse the brazing material and diffuse Ni atoms and Cr atoms into the fused brazing material to form the braze joint, causing the resulting brazing material to have an increased melting point due to the Ni and Cr contents of the braze joint to self-solidify the braze joint, and then cooling the resulting assembly.
摘要:
A method for manufacturing a semiconductor device having a solder layer includes the steps of: grinding a mounting surface of a semiconductor chip; etching the mounting surface of the chip; forming an electrode on the mounting surface of the chip; assembling the chip, the solder layer and a base in this order; and heating the chip, the solder layer and the base to be equal to or higher than a solidus temperature of the solder layer so that the solder layer is reflowed for soldering the chip on the base.
摘要:
A commutator is composed of a contact unit, a base member made of insulation material and a terminal unit. The contact unit has a flat brush-contact surface and a connection surface opposite the brush contact surface. The contact unit also has a plurality of commutator segments. The terminal unit has a plurality of conductive terminal members. The base member supports the commutator segments. The commutator also has an electrical connection structure having a set of a convex member and a concave member and a plurality of connection members disposed between the convex member and the concave member to connect the plurality of the commutator segments and terminal members respectively.
摘要:
The processing system for charge request data of the present invention comprises data input means for inputting charge request data, including charge transfer day, requesting organization, paying organization and an amount of transfer, a master file where information relating to requesting organizations and paying organizations are registered, charge transfer processing means for preparing a charge transfer detailed file including individual charge request data where said charge request data are classified to each requesting organization based on said master file and summary data summarizing number of transfers and amount of transfer for each type of the requesting organization, and for preparing a transfer slip containing charge transfer information of each requesting organization for each paying organization from said charge transfer detailed file, initial cost data containing information necessary for processing for financial accounting, and overall charge transfer data on the day of transfer, and input/output means for displaying, printing and transmitting the data prepared by said charge transfer processing means and for inputting operation, and executes processing necessary for charge transfer for each paying organization by inputting the charge request data.
摘要:
An electrode comprises an active substance therefor which is made of a shaped body of a carbon porous body and a low crystallinity or amorphous carbon layer formed on at least a part of surfaces of the carbon porous body. The carbon porous body further comprises crystalline carbon particles which are dispersed and held in the carbon porous body. A method for making the electrode and a nonaqueous electrolyte secondary cell comprising the electrode as a negative electrode are also described.
摘要:
A semiconductor device includes: first and second metallic plates, each of which includes a heat radiation surface and an inner surface; a semiconductor element between the metallic plates; a block between the second metallic plate and the semiconductor element; a solder member between the second metallic plate and the block; and a resin mold. The heat radiation surface is exposed from the resin mold. The second metallic plate includes a groove for preventing the solder member from expanding outside of the block. The groove is disposed on the inner surface and disposed on an outer periphery of the block. The second metallic plate further includes an inner surface member on an inner surface of the groove. The inner surface member has a solder wettability, which is larger than a solder wettability of the block.