DUAL-SIDED SOCKET DEVICE WITH CORRUGATION STRUCTURES AND SHIELD STRUCTURES

    公开(公告)号:US20220102892A1

    公开(公告)日:2022-03-31

    申请号:US17032587

    申请日:2020-09-25

    申请人: Intel Corporation

    IPC分类号: H01R13/11 H05K1/02 H05K9/00

    摘要: Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

    Dual-sided socket device with corrugation structures and shield structures

    公开(公告)号:US12009612B2

    公开(公告)日:2024-06-11

    申请号:US17032587

    申请日:2020-09-25

    申请人: Intel Corporation

    IPC分类号: H01R13/11 H05K1/02 H05K9/00

    摘要: Techniques and mechanisms for coupling packaged devices with a socket device. In an embodiment, the socket device comprises a socket body structure and conductors extending therethrough. A pitch of the conductors is in a range of between 0.1 millimeters (mm) and 3 mm. First and second metallization structures also extend, respectively, from opposite respective sides of the socket body structure. In the socket body structure, a conductive shield structure, electrically coupled to the first and second metallization structures, substantially extends around one of the conductors. For each of the first and second metallization structures, a vertical span of the metallization structure is in a range of between 0.05 mm and 2.0 mm, a portion of a side of the metallization structure forms a respective corrugation structure, and a horizontal span of the portion is at least 5% of the vertical span of the metallization structure.

    Universal linear edge connector
    10.
    发明授权

    公开(公告)号:US10044115B2

    公开(公告)日:2018-08-07

    申请号:US14757626

    申请日:2015-12-23

    申请人: Intel Corporation

    摘要: An apparatus comprises a cable connector including: a first connector body portion including a first plurality of electrical contacts arranged to contact electrical contacts of a first surface of an edge connector substrate; a second connector body portion separate from the first connector body portion and including a second plurality of electrical contacts arranged to oppose the first plurality of electrical contacts of the first connector body portion and to contact electrical contacts of a second surface of the edge connector substrate, wherein the first and second plurality of electrical contacts are electrically coupled to one or more cables; and a joining mechanism configured to join the first connector body portion and the second connector body portion together and to apply a bias force to the edge connector substrate when the edge connector substrate is arranged between the first connector body portion and the second connector body portion.