公开(公告)号：US07851841B2

公开(公告)日：2010-12-14

申请号：US11760382

申请日：2007-06-08

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen A. Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US20100155696A1

公开(公告)日：2010-06-24

申请号：US11681058

申请日：2007-03-01

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L29/66 ,  H01L21/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01F1/405 ,  H01L27/092 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78696 ,  H01L31/035281 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0504 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/781 ,  Y10S977/789 ,  Y10S977/938

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07091120B2

公开(公告)日：2006-08-15

申请号：US10910800

申请日：2004-08-04

申请人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

发明人： Mihai Buretea ,  Jian Chen ,  Calvin Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US07067867B2

公开(公告)日：2006-06-27

申请号：US10674060

申请日：2003-09-30

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence Bock ,  David Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

摘要翻译： 描述了具有多个半导体器件的电子基片的方法和装置。 在衬底上形成纳米线薄膜。 纳米线的薄膜形成为具有足够的纳米线密度以达到工作电流水平。 在纳米线的薄膜中限定多个半导体区域。 在半导体器件区域处形成触点，从而提供与多个半导体器件的电连接。 此外，用于制造纳米线的各种材料，包括p掺杂纳米线和n掺杂纳米线的薄膜，纳米线异质结构，发光纳米线异质结构，用于在衬底上定位纳米线的流动掩模，用于沉积纳米线的纳米线喷涂技术，用于减少或消除声子的技术 描述了纳米线中的电子散射，以及用于降低纳米线中的表面状态的技术。

公开(公告)号：US07795125B2

公开(公告)日：2010-09-14

申请号：US12274904

申请日：2008-11-20

申请人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

发明人： Mihai A. Buretea ,  Jian Chen ,  Calvin Y. H. Chow ,  Chunming Niu ,  Yaoling Pan ,  J. Wallace Parce ,  Linda T. Romano ,  David P. Stumbo

IPC分类号： H01L21/28 ,  H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78681 ,  H01L29/78696 ,  H01L33/06 ,  H01L33/24 ,  H01L51/0048 ,  H01L51/0545 ,  H01L2924/0002 ,  Y10T428/2913 ,  H01L2924/00

摘要： The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

摘要翻译： 本发明涉及纳米线材料复合体的制造方法和制造方法。 提供了具有连接到至少一个表面的一部分的纳米线的衬底。 在该部分上沉积材料以形成纳米线材料复合材料。 该方法进一步可选地包括从衬底分离纳米线材料复合物以形成独立的纳米线材料复合材料。 独立的纳米线材料复合材料任选进一步加工成电子基片。 可以使用本文所述的方法来生产各种电子基板。 例如，多个发光二极管可以由多个层叠的纳米线材料复合体制成，每个复合层发射不同波长的光。

公开(公告)号：US20100155786A1

公开(公告)日：2010-06-24

申请号：US11881739

申请日：2007-07-27

申请人： David L. Heald ,  Jian Chen ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  Madhuri L. Nallabolu ,  J. Wallace Parce ,  Srikanth Ranganathan

发明人： David L. Heald ,  Jian Chen ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  Madhuri L. Nallabolu ,  J. Wallace Parce ,  Srikanth Ranganathan

IPC分类号： H01L29/772 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L29/66477 ,  B82Y10/00 ,  B82Y30/00 ,  G03F7/0754 ,  G03F7/165 ,  G03F7/168 ,  H01L21/28273 ,  H01L21/823437 ,  H01L21/823828 ,  H01L29/42332 ,  H01L29/78

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.

摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。 还提供了在高温处理过程中保护纳米结构不熔化的方法。

公开(公告)号：US07064372B2

公开(公告)日：2006-06-20

申请号：US11004380

申请日：2004-12-03

申请人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

发明人： Xiangfeng Duan ,  Chunming Niu ,  Stephen Empedocles ,  Linda T. Romano ,  Jian Chen ,  Vijendra Sahi ,  Lawrence A. Bock ,  David P. Stumbo ,  J. Wallace Parce ,  Jay L. Goldman

IPC分类号： H01L27/108 ,  H01L29/94 ,  H01L29/76

CPC分类号： H01L29/78696 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  H01L24/95 ,  H01L27/1292 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/78684 ,  H01L29/7869 ,  H01L33/20 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

摘要： A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

公开(公告)号：US08749130B2

公开(公告)日：2014-06-10

申请号：US12039018

申请日：2008-02-28

申请人： J. Wallace Parce ,  Jian Chen ,  Robert S. Dubrow ,  William P. Freeman ,  Erik C. Scher ,  Jeffery A. Whiteford

发明人： J. Wallace Parce ,  Jian Chen ,  Robert S. Dubrow ,  William P. Freeman ,  Erik C. Scher ,  Jeffery A. Whiteford

IPC分类号： H01J1/62 ,  H01J63/04 ,  C09K11/54 ,  C09K11/56 ,  C09K11/02

CPC分类号： C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  C08K3/30 ,  C09D5/00 ,  C09D7/61 ,  C09D7/67 ,  C09D11/037 ,  C09K11/565 ,  C09K11/883 ,  G02B1/11 ,  G02B3/00 ,  G02B3/0006 ,  G02B5/08 ,  H01L33/502 ,  H01L33/504 ,  H01L33/56 ,  H05B33/145 ,  Y10S977/715 ,  Y10S977/753 ,  Y10S977/834 ,  Y10T428/23 ,  Y10T428/239

摘要： The present invention provides matrixes doped with semiconductor nanocrystals. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. The present invention also provides processes for producing matrixes comprising semiconductor nanocrystals.

摘要翻译： 本发明提供掺杂有半导体纳米晶体的矩阵。 在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。 纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。 本发明的基质也可用于折射率匹配应用。 在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。 本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。 本发明还提供了用于生产包含半导体纳米晶体的基质的方法。

公开(公告)号：US08558304B2

公开(公告)日：2013-10-15

申请号：US13098082

申请日：2011-04-29

申请人： Jian Chen ,  Xiangfeng Duan ,  Chao Liu ,  Madhuri Nallabolu ,  J. Wallace Parce ,  Srikanth Ranganathan

发明人： Jian Chen ,  Xiangfeng Duan ,  Chao Liu ,  Madhuri Nallabolu ,  J. Wallace Parce ,  Srikanth Ranganathan

IPC分类号： H01L29/792

CPC分类号： H01L29/66477 ,  B82Y10/00 ,  B82Y30/00 ,  G03F7/0754 ,  G03F7/165 ,  G03F7/168 ,  H01L21/28273 ,  H01L21/823437 ,  H01L21/823828 ,  H01L29/42332 ,  H01L29/78

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, formation of arrays in spin-on-dielectrics, solvent annealing after nanostructure deposition, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices). Methods for protecting nanostructures from fusion during high temperature processing are also provided.

摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团，自旋电介质中阵列形成，纳米结构沉积后的溶剂退火，使用抗蚀剂图案化和/或使用促进阵列形成的器件的涂层上形成阵列。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。 还提供了在高温处理过程中保护纳米结构不熔化的方法。

公开(公告)号：US08030161B2

公开(公告)日：2011-10-04

申请号：US12121591

申请日：2008-05-15

申请人： Xiangfeng Duan ,  Jian Chen ,  J. Wallace Parce ,  Francisco A. Leon

发明人： Xiangfeng Duan ,  Jian Chen ,  J. Wallace Parce ,  Francisco A. Leon

IPC分类号： H01L21/336 ,  H01L29/788

CPC分类号： H01L29/792 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/7883 ,  H01L29/7885

摘要： A nonvolatile memory cell includes a substrate comprising a source, drain, and channel between the source and the drain. A tunnel dielectric layer overlies the channel, and a localized charge storage layer is disposed between the tunnel dielectric layer and a control dielectric layer. A gate electrode has a first surface adjacent to the control dielectric layer, and the first surface includes a midsection and two edge portions. According to one embodiment, the midsection defines a plane, and at least one edge portion extends away from the plane. Preferably, the edge portion extending away from the plane converges toward an opposing second surface of the gate electrode. According to another embodiment, the gate electrode of the nonvolatile memory cell includes a first sublayer and a second sublayer of a different width on the first sublayer.

摘要翻译： 非易失性存储单元包括在源极和漏极之间包括源极，漏极和沟道的衬底。 隧道介电层覆盖在沟道上，并且局部电荷存储层设置在隧道介电层和控制电介质层之间。 栅电极具有与控制电介质层相邻的第一表面，并且第一表面包括中部和两个边缘部分。 根据一个实施例，中段限定一个平面，并且至少一个边缘部分远离平面延伸。 优选地，远离平面延伸的边缘部分朝向栅电极的相对的第二表面会聚。 根据另一实施例，非易失性存储单元的栅极包括第一子层和第一子层上具有不同宽度的第二子层。