公开(公告)号：US20060211259A1

公开(公告)日：2006-09-21

申请号：US11087079

申请日：2005-03-21

申请人： Jan Maes ,  Hilde Witte ,  Christophe Pomarede

发明人： Jan Maes ,  Hilde Witte ,  Christophe Pomarede

IPC分类号： H01L21/336

CPC分类号： H01L21/28194 ,  C23C16/401 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45504 ,  C23C16/45525 ,  C23C16/482 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517

摘要： A method for forming an integrated circuit structure on a semiconductor substrate comprises depositing a high k gate dielectric material over the substrate using an atomic layer deposition process. A silicon oxide capping layer is deposited over the gate dielectric material in a rapid thermal chemical vapor deposition process. A gate electrode is formed over the silicon oxide capping layer.

摘要翻译： 一种用于在半导体衬底上形成集成电路结构的方法包括使用原子层沉积工艺在衬底上沉积高k栅极电介质材料。 在快速热化学气相沉积工艺中，在栅极电介质材料上沉积氧化硅覆盖层。 在氧化硅覆盖层上形成栅电极。

公开(公告)号：US20060110943A1

公开(公告)日：2006-05-25

申请号：US11212503

申请日：2005-08-24

申请人： Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

发明人： Johan Swerts ,  Hilde De Witte ,  Jan Maes ,  Christophe Pomarede ,  Ruben Haverkort ,  Yuet Wan ,  Marinus De Blank ,  Cornelius Van Der Jeugd ,  Jacobus Beulens

IPC分类号： H01L21/31

CPC分类号： H01L21/28194 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/3148 ,  H01L21/3185 ,  H01L29/518

摘要： A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.

摘要翻译： 通过暴露于远程激发的物质而活化的氮前体被用作形成含氮层的反应物。 远程激发的物质可以是例如已经在微波自由基发生器中被激发的N 2，Ar和/或He。 微波自由基发生器下游和衬底上游，受激物质的流动与NH 3 3流混合。 激发的物质激活NH 3。 底物暴露于活化的NH 3和被激发的物质。 衬底也可以暴露于另一物质的前体，以在化学气相沉积中形成化合物层。 此外，已经沉积的层可以通过暴露于活化的NH 3和所激发的物质而被氮化，这导致使用激发的N 2 O 3的等离子体氮化导致更高的氮掺入水平， 单独使用NH 3或单独使用相同工艺温度和氮化持续时间的氮化。

公开(公告)号：US20060199357A1

公开(公告)日：2006-09-07

申请号：US11370228

申请日：2006-03-06

申请人： Yuet Wan ,  Rene de Blank ,  Jan Maes

发明人： Yuet Wan ,  Rene de Blank ,  Jan Maes

IPC分类号： H01L21/00 ,  H01L21/31

CPC分类号： H01L21/02321 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/02115 ,  H01L21/0217 ,  H01L21/02205 ,  H01L21/3115 ,  H01L21/3185 ,  H01L21/67017 ,  H01L21/67115 ,  H01L29/7833 ,  H01L29/7843

摘要： A silicon nitride film is formed on a substrate in a reaction chamber by introducing trisilane and a reactive nitrogen species into the chamber in separate pulses. A carbon precursor gas is also flowed into the chamber during introduction of the trisilane and/or during introduction of the reactive nitrogen species, or in pulses separate from the trisilane and reactive nitrogen species pulses. The carbon is used as a dopant in the silicon nitride film and advantageously allows a high stress silicon nitride film to be formed.

公开(公告)号：US20070026540A1

公开(公告)日：2007-02-01

申请号：US11375588

申请日：2006-03-13

申请人： Sebastian Nooten ,  Jan Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Raisanen ,  Kai-Erik Elers

发明人： Sebastian Nooten ,  Jan Maes ,  Steven Marcus ,  Glen Wilk ,  Petri Raisanen ,  Kai-Erik Elers

IPC分类号： H01L21/00 ,  B05C11/00 ,  C23C16/00 ,  H01L21/31

CPC分类号： H01J37/32082 ,  C23C16/045 ,  C23C16/403 ,  C23C16/448 ,  C23C16/45519 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32935 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3162 ,  H01L29/66181

摘要： In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration, pressure and electrode spacing are varied from true self-saturating reactions to operate in a depletion-effect mode. Deposition thus takes place close to the substrate surface but is controlled to terminate after reaching a specified distance into openings (e.g., deep DRAM trenches, pores, etc.). Reactor configurations that are suited to such modulation include showerhead, in situ plasma reactors, particularly with adjustable electrode spacing. In another aspect, alternately and sequentially contacting a substrate, the substrate including openings, with at least two different reactants, wherein an under-saturated dose of at least one of the reactants has been predetermined and the under-saturated dose is provided uniformly across the substrate surface, deposits a film that less than fully covers surfaces of the openings, leading to depletion effects in less accessible regions on the substrate surface

摘要翻译： 在一个方面，通过等离子体增强原子层沉积的变化形成非共形层，其中脉冲持续时间，分离，RF功率导通时间，反应物浓度，压力和电极间距中的一个或多个从真实的自饱和反应变化 以耗尽效应模式运行。 因此，沉积物靠近基底表面发生，但是在到达开口（例如，深的DRAM沟槽，孔隙等）中的特定距离之后被控制终止。 适用于这种调制的反应器配置包括喷头，原位等离子体反应器，特别是具有可调节的电极间距。 在另一方面，交替地和顺序地接触基底，包括开口的基底与至少两种不同的反应物接触，其中至少一种反应物的饱和剂量已被预先确定，并且不饱和剂量被均匀地提供在 衬底表面沉积小于完全覆盖开口表面的膜，导致在衬底表面上较不易接近的区域中的耗尽效应

公开(公告)号：US20050269651A1

公开(公告)日：2005-12-08

申请号：US11138746

申请日：2005-05-25

申请人： Peijun Chen ,  Tsai Wilman ,  Mathieu Caymax ,  Jan Maes

发明人： Peijun Chen ,  Tsai Wilman ,  Mathieu Caymax ,  Jan Maes

IPC分类号： C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/471 ,  H01L29/51 ,  H01L29/772

CPC分类号： H01L21/28194 ,  C23C16/0218 ,  C23C16/308 ,  C23C16/345 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31645 ,  H01L21/318 ,  H01L21/3185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for fabricating a dielectric stack in an integrated circuit comprising the steps of (i) forming a high-k dielectric layer on a semiconductor substrate, (ii) subjecting the semiconductor substrate with the high-k dielectric layer to a nitrogen comprising vapor phase reactant and silicon comprising vapor phase reactant in a plasma-enhanced chemical vapor deposition process (PECVD) or a plasma-enhanced atomic layer chemical vapor deposition (PE ALCVD) process. Furthermore, the present invention provides a dielectric stack in an integrated circuit comprising (i) a high-k dielectric layer comprising at least a high-k material, (ii) a dielectric layer comprising at least silicon and nitrogen; (iii) an intermediate layer disposed between the high-k dielectric layer and the dielectric layer, the intermediate layer comprising the high-k material, silicon, and nitrogen.

摘要翻译： 本发明提供了一种用于在集成电路中制造电介质叠层的方法，包括以下步骤：（i）在半导体衬底上形成高k电介质层，（ii）使具有高k电介质层的半导体衬底经受 包含气相反应物的氮和包含气相反应物的硅在等离子体增强化学气相沉积工艺（PECVD）或等离子体增强原子层化学气相沉积（PE ALCVD）工艺中。 此外，本发明提供了一种集成电路中的电介质堆叠，包括（i）至少包含高k材料的高k电介质层，（ii）至少包含硅和氮的电介质层; （iii）设置在高k电介质层和电介质层之间的中间层，中间层包含高k材料，硅和氮。

公开(公告)号：US20080093711A1

公开(公告)日：2008-04-24

申请号：US11958162

申请日：2007-12-17

申请人： Ivo Raaijmakers ,  Pekka Soininen ,  Jan Maes

发明人： Ivo Raaijmakers ,  Pekka Soininen ,  Jan Maes

IPC分类号： H01L23/58

CPC分类号： H01L28/56 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： High dielectric constant (high-k) materials are formed directly over oxidation-susceptible conductors such as silicon. A discontinuous layer is formed, with gaps between grains of the high-k material. Exposed conductor underneath the grain boundaries is oxidized or nitridized to form, e.g., silicon dioxide or silicon nitride, when exposed to oxygen or nitrogen source gases at elevated temperatures. This dielectric growth is preferential underneath the grain boundaries such that any oxidation or nitridation at the interface between the high-k material grains and covered conductor is not as extensive. The overall dielectric constant of the composite film is high, while leakage current paths between grains is reduced. Ultrathin high-k materials with low leakage current are thereby enabled.

摘要翻译： 高介电常数（高k）材料直接在氧化敏感导体（如硅）上形成。 形成不连续层，在高k材料的晶粒之间形成间隙。 在高温下暴露于氧或氮源气体时，在晶界之下的暴露导体被氧化或氮化以形成例如二氧化硅或氮化硅。 这种电介质生长优选在晶界之下，使得在高k材料晶粒和被覆导体之间的界面处的任何氧化或氮化不是很广泛。 复合膜的总介电常数高，而晶粒间的漏电流路径减小。 从而能够实现低泄漏电流的超薄高k材料。

公开(公告)号：US20060180879A1

公开(公告)日：2006-08-17

申请号：US11060105

申请日：2005-02-16

申请人： Jan Maes ,  Annelies Delabie ,  Yashuhiro Shimamoto

发明人： Jan Maes ,  Annelies Delabie ,  Yashuhiro Shimamoto

IPC分类号： H01L29/78 ,  H01L21/471

CPC分类号： H01L21/32051 ,  C23C14/024 ,  C23C16/0272 ,  C23C16/345 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76841 ,  H01L29/513 ,  H01L29/517

摘要： The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.

摘要翻译： 本发明一般涉及集成电路（IC）制造工艺。 本发明更具体地涉及用于随后沉积金属，金属氧化物，金属氮化物和/或金属碳化物层的表面的处理，例如二氧化硅或氮氧化硅层。 本发明还涉及通过本发明的方法获得的高k栅极。