摘要:
Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same.The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.
摘要:
Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same.The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.
摘要:
Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same. The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.
摘要:
Provided are a heat sink package in which a semiconductor package and a heat sink are bound to each other and a method of fabricating the same.The heat sink package includes a heat sink having a cavity on an upper surface thereof; a metal layer formed on the bottom surface of the cavity; a solder paste layer formed on the metal layer; a substrate on the solder paste layer; and a lead and a semiconductor chip mounted on the substrate.
摘要:
A stacked intelligent power module package is provided. The intelligent power module package of the present invention includes a power unit including a heat sink and a control unit which is separately manufactured from the power unit and is subsequently stacked on the power unit. The power unit and the control unit of the intelligent power module package are stacked in two different ways including stacking two wire-bonded leadframes of the power unit and the control unit and stacking two separate semiconductor packages of the power unit and the control unit by using locking means formed in each of the semiconductor packages after a trimming/forming process and an electrical property test are finished.
摘要:
Provided is a semiconductor device package including a substrate formed of a silicon (Si)-based material. The semiconductor device package includes a first substrate which comprises first and second principal planes which are opposite each other, and a substrate body layer disposed between the first and second principal planes, the substrate body layer being formed of a silicon (Si)-based material; and at least one first semiconductor device which is mounted on the first principal plane.
摘要:
A semiconductor package is disclosed. Particularly, a multi-chip package is disclosed, which can stably maintain insulation between a plurality of semiconductor chips and effectively release heat to the outside. The semiconductor package includes an insulation layer including a diamond layer formed by a chemical vapor deposition method between a lead frame or a heat sink and the semiconductor chips disposed thereon.
摘要:
A semiconductor package is disclosed. Particularly, a multi-chip package is disclosed, which can stably maintain insulation between a plurality of semiconductor chips and effectively release heat to the outside. The semiconductor package includes an insulation layer including a diamond layer formed by a chemical vapor deposition method between a lead frame or a heat sink and the semiconductor chips disposed thereon.
摘要:
Provided are power device substrates that comprise thermally conductive plastic materials, and power device packages including the same. An exemplary power device package includes a power device substrate that comprises a thermally conductive plastic material, and has a first principal plane that provides an electrically insulating surface and a second principal plane of which at least a portion is exposed outside a molding member. The exemplary power device package further includes one or more power devices disposed on the first principal plane of the power device substrate, and a plurality of conductive members that are electrically connected to the power device(s) in order to electrically connect the power device(s) to an external circuit.
摘要:
Molded leadless packages having improved stacked structures are disclosed. An exemplary molded leadless package includes a die attaching pad, a plurality of leads spaced apart from the die attaching pad at a periphery region of the die attaching pad, a semiconductor chip on the die attaching pad, a plurality of bonding wires electrically connecting the leads to the semiconductor chip, and a sealing member fixedly enclosing the semiconductor chip and the bonding wires while partly exposing an outer surface of each of the leads. The sealing member fills gaps between the die attaching pad and the leads and includes at least one protrusion protruding downward from the die attaching pad and the leads.