公开(公告)号：US07589415B2

公开(公告)日：2009-09-15

申请号：US10119936

申请日：2002-04-11

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L23/04

CPC分类号： H01J9/142 ,  H01J9/146 ,  H01J29/076 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/19041 ,  H01L2924/19043

摘要： A semiconductor chip in which a through hole penetrating through its surface and reverse surface is formed in a scribe line region in the vicinity of an active region where a functional device is formed, and a conductive member is arranged in the through portion. The through portion may be a groove opening sideward on a sidewall surface of the semiconductor chip. The through portion may be a through hole blocked from a side part of the semiconductor chip. The semiconductor chip may further include wiring for electrically connecting an internal circuit formed in the active region and the conductive member to each other.

公开(公告)号：US06376915B1

公开(公告)日：2002-04-23

申请号：US09512337

申请日：2000-02-24

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L2348

CPC分类号： H01L23/295 ,  H01L23/10 ,  H01L23/49575 ,  H01L2224/16145 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device having a semiconductor chip bonded to the surface of a solid body (another semiconductor chip or wiring board). A hollow enclosed space surrounding a connection member is formed between the solid body surface and the surface of the semiconductor chip opposite thereto. The enclosed space may be formed by a surrounding wall disposed around the circumference of the semiconductor chip. The enclosed space may alternatively be formed by an encapsulating resin for packaging.

摘要翻译： 一种半导体器件，其具有与固体本体（另一半导体芯片或布线基板）的表面接合的半导体芯片。 在固体表面和与其相对的半导体芯片的表面之间形成围绕连接构件的中空封闭空间。 封闭空间可以由围绕半导体芯片的圆周设置的周围壁形成。 封闭空间可替代地由用于包装的封装树脂形成。

公开(公告)号：US07045900B2

公开(公告)日：2006-05-16

申请号：US10797018

申请日：2004-03-11

申请人： Junichi Hikita ,  Goro Nakatani ,  Nobuhisa Kumamoto ,  Katsumi Sameshima ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Goro Nakatani ,  Nobuhisa Kumamoto ,  Katsumi Sameshima ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/81 ,  H01L23/49575 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/28 ,  H01L24/31 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/013

摘要： A semiconductor chip having a functional bump provided on a surface of a semiconductor substrate thereof for electrical connection between an internal circuit thereof and a solid device, and a dummy bump not serving for the electrical connection between the internal circuit and the solid device. The dummy bump may be a stress relieving bump for relieving stresses exerted thereon. The dummy bump may be connected to a low impedance portion. The functional bump and the dummy bump may be provided on a surface protective film. In this case, the dummy bump is provided on a recess formed in the surface protective film.

摘要翻译： 具有设置在其半导体衬底的表面上的用于在其内部电路和固体器件之间进行电连接的功能性凸块的半导体芯片和不用于内部电路和固体器件之间的电连接的虚拟凸起。 虚拟凸块可以是用于减轻施加在其上的应力的应力消除凸块。 虚拟凸块可以连接到低阻抗部分。 可以在表面保护膜上设置功能性凸块和虚设凸块。 在这种情况下，在形成在表面保护膜上的凹部上设置虚拟凸块。

公开(公告)号：US07009294B2

公开(公告)日：2006-03-07

申请号：US10748327

申请日：2003-12-31

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/19043 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2224/05124

摘要： A production process for a semiconductor device having a metal electrode on a semiconductor substrate thereof. A metal electrode portion is formed on a surface of another substrate for electrode transfer. Then, the metal electrode portion is transferred from the electrode transfer substrate onto the semiconductor substrate by pressing together the electrode transfer substrate and the semiconductor substrate. The electrode transfer substrate has, for example, a seed film provided on the surface thereof, and the formation of the metal electrode portion on the electrode transfer substrate may be achieved by depositing a material for the metal electrode on the seed film by plating. The electrode transfer substrate may have an insulating film which covers a surface of the seed film except a portion thereof on which the metal electrode portion is to be formed.

摘要翻译： 一种在其半导体衬底上具有金属电极的半导体器件的制造方法。 金属电极部分形成在用于电极转移的另一基板的表面上。 然后，通过将电极转移衬底和半导体衬底压在一起，将金属电极部分从电极转移衬底转移到半导体衬底上。 电极转移基板具有例如设置在其表面上的种子膜，并且可以通过电镀在种子膜上沉积金属电极材料来实现电极转移基板上的金属电极部分的形成。 电极转移基板可以具有覆盖除了要形成金属电极部分的部分之外的种子膜的表面的绝缘膜。

公开(公告)号：US06724084B1

公开(公告)日：2004-04-20

申请号：US09499384

申请日：2000-02-07

申请人： Junichi Hikita ,  Goro Nakatani ,  Nobuhisa Kumamoto ,  Katsumi Sameshima ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Goro Nakatani ,  Nobuhisa Kumamoto ,  Katsumi Sameshima ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L2348

CPC分类号： H01L24/81 ,  H01L23/49575 ,  H01L23/552 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/28 ,  H01L24/31 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05669 ,  H01L2224/10135 ,  H01L2224/10165 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73207 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/85399 ,  H01L2225/06513 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3511 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/013

摘要： A semiconductor chip having a functional bump provided on a surface of a semiconductor substrate thereof for electrical connection between an internal circuit thereof and a solid device, and a dummy bump not serving for the electrical connection between the internal circuit and the solid device. The dummy bump may be a stress relieving bump for relieving stresses exerted thereon. The dummy bump may be connected to a low impedance portion. The functional bump and the dummy bump may be provided on a surface protective film. In this case, the dummy bump is provided on a recess formed in the surface protective film.

公开(公告)号：US06696347B1

公开(公告)日：2004-02-24

申请号：US09511800

申请日：2000-02-23

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L2176

CPC分类号： H01L24/11 ,  H01L21/6835 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/19043 ,  H01L2224/05666 ,  H01L2924/00014 ,  H01L2224/05684 ,  H01L2224/05124

摘要： A production process for a semiconductor device having a metal electrode on a semiconductor substrate thereof. A metal electrode portion is formed on a surface of another substrate for electrode transfer. Then, the metal electrode portion is transferred from the electrode transfer substrate onto the semiconductor substrate by pressing together the electrode transfer substrate and the semiconductor substrate. The electrode transfer substrate has, for example, a seed film provided on the surface thereof, and the formation of the metal electrode portion on the electrode transfer substrate may be achieved by depositing a material for the metal electrode on the seed film by plating. The electrode transfer substrate may have an insulating film which covers a surface of the seed film except a portion thereof on which the metal electrode portion is to be formed.

公开(公告)号：US06391685B1

公开(公告)日：2002-05-21

申请号：US09511106

申请日：2000-02-23

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Shigeyuki Ueda

IPC分类号： H01L2144

CPC分类号： H01J9/142 ,  H01J9/146 ,  H01J29/076 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04042 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/19041 ,  H01L2924/19043

摘要： A semiconductor chip in which a through hole penetrating through its surface and reverse surface is formed in a scribe line region in the vicinity of an active region where a functional device is formed, and a conductive member is arranged in the through portion. The through portion may be a groove opening sideward on a sidewall surface of the semiconductor chip. The through portion may be a through hole blocked from a side part of the semiconductor chip. The semiconductor chip further includes wiring for electrically connecting an internal circuit formed in the active region and the conductive member to each other.

摘要翻译： 在形成有功能元件的有源区域附近的划线区域形成贯通其表面和反面的通孔的半导体芯片，并且在贯通部配置导电部件。 贯通部分可以是在半导体芯片的侧壁表面上的侧向槽的开口。 贯通部分可以是从半导体芯片的侧部阻挡的通孔。 半导体芯片还包括用于将形成在有源区域中的内部电路和导电构件彼此电连接的布线。

公开(公告)号：US6133637A

公开(公告)日：2000-10-17

申请号：US155134

申请日：1998-09-18

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： G01P3/488 ,  H01L21/56 ,  H01L21/60 ,  H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L25/065 ,  H01L25/18 ,  H01L29/40

CPC分类号： H01L23/544 ,  G01P3/488 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/1147 ,  H01L2224/13016 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/78281 ,  H01L2224/78301 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85181 ,  H01L2224/90 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/90 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161

摘要： A semiconductor device includes first and second semiconductor chips. The first semiconductor chip is formed with a plurality of first electrodes on a surface thereof, while the second semiconductor chip is formed with a plurality of second electrodes on a surface thereof. These surfaces are positioned facing to each other, thereby connecting between the first electrode and the second electrode. The respective surfaces are formed with circuit elements. The circuit elements are covered by the first semiconductor chip and the second semiconductor chip The first semiconductor chip and the second semiconductor chip at their connecting portions are encapsulated by a synthetic resin that is excellent in moisture resistance. The first semiconductor chip and the second semiconductor chip are entirely packaged by a second synthetic resin that is excellent in adhesibility.

摘要翻译： PCT No.PCT / JP98 / 00281 Sec。 371日期：1998年9月18日 102（e）1998年9月18日PCT PCT。1998年1月22日PCT公布。 出版物WO98 / 33217 日期：1998年7月30日半导体器件包括第一和第二半导体芯片。 第一半导体芯片在其表面上形成有多个第一电极，而第二半导体芯片在其表面上形成有多个第二电极。 这些表面被定位成彼此面对，由此连接在第一电极和第二电极之间。 各个表面形成有电路元件。 电路元件由第一半导体芯片和第二半导体芯片覆盖。第一半导体芯片和第二半导体芯片在其连接部分由耐湿性优异的合成树脂封装。 第一半导体芯片和第二半导体芯片由粘合性优异的第二合成树脂完全包装。

公开(公告)号：US06458609B1

公开(公告)日：2002-10-01

申请号：US09612480

申请日：2000-07-07

申请人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

发明人： Junichi Hikita ,  Kazutaka Shibata ,  Tsunemori Yamaguchi ,  Tadahiro Morifuji ,  Osamu Miyata

IPC分类号： H01L2100

CPC分类号： H01L23/544 ,  G01P3/488 ,  H01L21/563 ,  H01L23/3135 ,  H01L23/49575 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/90 ,  H01L25/0657 ,  H01L25/18 ,  H01L2223/54426 ,  H01L2224/05554 ,  H01L2224/1147 ,  H01L2224/13016 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/2939 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/78281 ,  H01L2224/78301 ,  H01L2224/81136 ,  H01L2224/8114 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83104 ,  H01L2224/83136 ,  H01L2224/8319 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83907 ,  H01L2224/85181 ,  H01L2224/90 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/07811 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes first and second semiconductor chips. The first semiconductor chip is formed with a plurality of first electrodes on a surface thereof, while the second semiconductor chip is formed with a plurality of second electrodes on a surface thereof. These surfaces are positioned facing to each other, thereby connecting between the first electrode and the second electrode. The respective surfaces are formed with circuit elements. The circuit elements are covered by the first semiconductor chip and the second semiconductor chip The first semiconductor chip and the second semiconductor chip at their connecting portions are encapsulated by a synthetic resin that is excellent in moisture resistance. The first semiconductor chip and the second semiconductor chip are entirely packaged by a second synthetic resin that is excellent in adhesibility.

摘要翻译： 半导体器件包括第一和第二半导体芯片。 第一半导体芯片在其表面上形成有多个第一电极，而第二半导体芯片在其表面上形成有多个第二电极。 这些表面被定位成彼此面对，由此连接在第一电极和第二电极之间。 各个表面形成有电路元件。 电路元件由第一半导体芯片和第二半导体芯片覆盖。第一半导体芯片和第二半导体芯片在其连接部分由耐湿性优异的合成树脂封装。 第一半导体芯片和第二半导体芯片由粘合性优异的第二合成树脂完全包装。

公开(公告)号：US06462420B2

公开(公告)日：2002-10-08

申请号：US09502433

申请日：2000-02-11

申请人： Junichi Hikita ,  Hiroo Mochida ,  Goro Nakatani ,  Kazutaka Shibata

发明人： Junichi Hikita ,  Hiroo Mochida ,  Goro Nakatani ,  Kazutaka Shibata

IPC分类号： H01L2348

CPC分类号： H01L24/10 ,  H01L23/49575 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/05644 ,  H01L2224/05099

摘要： A semiconductor chip is bonded to the surface of another semiconductor chip with a predetermined gap secured in between. The semiconductor chip has a plurality of bumps formed on the surface thereof facing the other semiconductor chip. The bumps include functional bumps that contribute to electrical connection between the chips and dummy bumps that do not contribute thereto.