公开(公告)号：US08152981B2

公开(公告)日：2012-04-10

申请号：US12015410

申请日：2008-01-16

申请人： Kapila P. Wijekoon ,  Timothy Weidman

发明人： Kapila P. Wijekoon ,  Timothy Weidman

IPC分类号： C25D13/10 ,  H01B1/02

CPC分类号： C09K19/36 ,  C25D13/00 ,  C25D13/12 ,  H01L31/02008 ,  H01L31/022425 ,  Y02E10/50

摘要： Embodiments of the invention generally provide methods and compositions that are used during electrophoretic deposition (EPD) processes. In one embodiment, a method for forming a metallization material during an EPD process is provided which includes positioning a substrate containing apertures disposed thereon, exposing the substrate to a flux agent to form a flux coating within the apertures, exposing the flux coating to an EPD mixture to form a particulate layer therein, and exposing the substrate to a reflow process to form a metallization layer within the apertures. Optionally, the particulate layer may be exposed to the flux agent prior to the reflow process. The EPD mixture generally contains a dielectric hydrocarbon fluid, metallic particles, and a liquid crystal material (LCM), such as a cholesteryl compound. In some embodiments, an abietic acid compound may be used as the flux agent, or alternatively, as the LCM.

摘要翻译： 本发明的实施方案通常提供在电泳沉积（EPD）方法期间使用的方法和组合物。 在一个实施例中，提供了一种在EPD工艺期间形成金属化材料的方法，其包括定位其上布置的孔的衬底，将衬底暴露于助焊剂以在孔内形成焊剂涂层，将焊剂涂层暴露于EPD 混合物以在其中形成颗粒层，并将基板暴露于回流工艺以在孔内形成金属化层。 任选地，颗粒层可以在回流工艺之前暴露于助焊剂。 EPD混合物通常包含介电烃流体，金属颗粒和液晶材料（LCM），例如胆固醇基化合物。 在一些实施方案中，松香酸化合物可以用作助熔剂，或者作为LCM使用。

公开(公告)号：US08207005B2

公开(公告)日：2012-06-26

申请号：US13042313

申请日：2011-03-07

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

IPC分类号： H01L21/00 ,  H01L21/76 ,  H01L21/331 ,  H01L21/20 ,  H01L33/00

CPC分类号： H01L21/67034 ,  G01T1/2018 ,  H01L21/225 ,  H01L21/306 ,  H01L21/308 ,  H01L21/67727 ,  H01L21/67736 ,  H01L21/67745 ,  H01L21/6776 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

摘要翻译： 本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。 在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。 可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

公开(公告)号：US20100015756A1

公开(公告)日：2010-01-21

申请号：US12504216

申请日：2009-07-16

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

IPC分类号： H01L21/20 ,  H01L21/28 ,  C23F1/00

CPC分类号： H01L31/022425 ,  H01L21/67155 ,  H01L31/0236 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层 ，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。

公开(公告)号：US07514353B2

公开(公告)日：2009-04-07

申请号：US11385344

申请日：2006-03-20

申请人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

发明人： Timothy W. Weidman ,  Kapila P. Wijekoon ,  Zhize Zhu ,  Avgerinos V. (Jerry) Gelatos ,  Amit Khandelwal ,  Arulkumar Shanmugasundram ,  Michael X. Yang ,  Fang Mei ,  Farhad K. Moghadam

IPC分类号： H01L21/4763

CPC分类号： C23C18/1678 ,  B82Y30/00 ,  C23C16/0227 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C18/1608 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/31 ,  C23C18/32 ,  C23C18/34 ,  C23C18/38 ,  C23C18/40 ,  C23C18/48 ,  C25D5/34 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

摘要翻译： 本发明的实施例通常提供了通过在接触特征上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀工艺（ECP）和/或无电镀沉积来填充层来填充形成在半导体器件中的接触电平特征的方法 过程。 在一个实施例中，阻挡层具有催化活性表面，其将允许在阻挡层上无电沉积金属。 一方面，无电沉积金属是铜或铜合金。 在一个方面，通过使用无电镀沉积工艺，用铜合金填充接触层的特征。 另一方面，铜合金用于从导电铜层薄层中，该铜层用于随后通过使用ECP，PVD，CVD和/或ALD沉积工艺用含铜材料填充特征。 在一个实施例中，阻挡层的一部分有意地被允许与触点电平特征的硅结处的痕迹的残余氧化物反应以形成低电阻连接。

公开(公告)号：US08216441B2

公开(公告)日：2012-07-10

申请号：US11953357

申请日：2007-12-10

申请人： Manoocher Birang ,  Kapila P. Wijekoon ,  Alexander Sou-Kang Ko ,  Eugene Rabinovich

发明人： Manoocher Birang ,  Kapila P. Wijekoon ,  Alexander Sou-Kang Ko ,  Eugene Rabinovich

IPC分类号： C25D1/12

CPC分类号： C25D15/02 ,  C25D7/12 ,  C25D13/22 ,  C25D17/00 ,  C25D17/001 ,  H01L31/022425 ,  H01L31/18 ,  Y02E10/50

摘要： Embodiments of the invention provide a novel apparatus and methods for forming a contact structure having metal lines formed using an electrophoretic deposition process. A substrate having a conductive or semiconductive layer is covered with an insulating layer and patterned to expose the conductive or semiconductive layer. The substrate is exposed to a processing medium comprising charged particles immersed in a dielectric fluid. An electric field is optionally applied. The charged particles deposit onto the exposed portions of the substrate and are then solidified in a reflow process.

摘要翻译： 本发明的实施例提供一种用于形成具有使用电泳沉积工艺形成的金属线的接触结构的新型设备和方法。 具有导电或半导体层的衬底被绝缘层覆盖并被图案化以暴露导电或半导体层。 将基底暴露于包含浸入介电流体中的带电粒子的处理介质。 可选地施加电场。 带电粒子沉积到衬底的暴露部分上，然后在回流过程中固化。

公开(公告)号：US20110183458A1

公开(公告)日：2011-07-28

申请号：US13042313

申请日：2011-03-07

申请人： Timothy W. WEIDMAN ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

发明人： Timothy W. WEIDMAN ,  Rohit Mishra ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Yonghwa Chris Cha ,  Tristan Holtam ,  Vinay Shah

IPC分类号： H01L31/0236

CPC分类号： H01L21/67034 ,  G01T1/2018 ,  H01L21/225 ,  H01L21/306 ,  H01L21/308 ,  H01L21/67727 ,  H01L21/67736 ,  H01L21/67745 ,  H01L21/6776 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active doped region(s) and the metal contact structure of the solar cell device. In one embodiment, the methods include the steps of depositing a dielectric material that is used to define the boundaries of the active regions and/or contact structure of a solar cell device. Various techniques may be used to form the active regions of the solar cell and the metal contact structure.

摘要翻译： 本发明的实施例考虑使用新的方法形成高效太阳能电池，以形成太阳能电池器件的有源掺杂区域和金属接触结构。 在一个实施例中，所述方法包括沉积用于限定太阳能电池器件的有源区域和/或接触结构的边界的介电材料的步骤。 可以使用各种技术来形成太阳能电池的有源区域和金属接触结构。

公开(公告)号：US20100051085A1

公开(公告)日：2010-03-04

申请号：US12549291

申请日：2009-08-27

申请人： Timothy W. Weidman ,  Charles Gay ,  Hsiu-Wu (Jason) Guo ,  Rohit Mishra ,  Kapila P. Wijekoon ,  Hemant Mungekar

发明人： Timothy W. Weidman ,  Charles Gay ,  Hsiu-Wu (Jason) Guo ,  Rohit Mishra ,  Kapila P. Wijekoon ,  Hemant Mungekar

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. Methods of forming the high efficiency solar cell may include the use of a prefabricated back plane that is bonded to the metalized solar cell device to form an interconnected solar cell module. Solar cells most likely to benefit from the invention including those having active regions comprising single or multicrystalline silicon with both positive and negative contacts on the rear side of the cell.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 形成高效率太阳能电池的方法可以包括使用结合到金属化太阳能电池器件的预制背板来形成互连的太阳能电池模块。 最有可能受益于本发明的太阳能电池，包括那些具有活性区域的太阳能电池，所述活性区域包括在电池背面具有正触点和负极的单晶硅或多晶硅。

公开(公告)号：US20090139568A1

公开(公告)日：2009-06-04

申请号：US12273975

申请日：2008-11-19

申请人： Timothy W. Weidman ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Rohit Mishra

发明人： Timothy W. Weidman ,  Michael P. Stewart ,  Kapila P. Wijekoon ,  Rohit Mishra

IPC分类号： H01L31/00 ,  H01L21/02 ,  H01L31/18

CPC分类号： H01L31/022425 ,  Y02E10/50

摘要： Embodiments of the invention contemplate formation of a low cost solar cell using novel methods and apparatus to form a metal contact structure. The method generally uses a conductive contact layer that enables formation of a good electrical contact to the solar cell device. In one case, the contact layer is a nickel containing layer. Various deposition techniques may be used to form the metal contact structure.

摘要翻译： 本发明的实施例考虑使用新颖的方法和装置形成金属接触结构来形成低成本太阳能电池。 该方法通常使用能够形成与太阳能电池器件良好的电接触的导电接触层。 在一种情况下，接触层是含镍层。 可以使用各种沉积技术来形成金属接触结构。

公开(公告)号：US20130183796A1

公开(公告)日：2013-07-18

申请号：US13739390

申请日：2013-01-11

申请人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

发明人： Michael P. Stewart ,  Prabhat Kumar ,  Kapila P. Wijekoon ,  Lin Zhang ,  Hari K. Ponnekanti

IPC分类号： H01L31/0224

CPC分类号： H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the present invention are directed to a process for making solar cells. Particularly, embodiments of the invention provide simultaneously co-firing (e.g., thermally processing) metal layers disposed both on a first and a second surface of a solar cell substrate to complete the metallization process in one step. By doing so, both the metal layers formed on the first and the second surfaces of the solar cell substrate are co-fired (e.g., simultaneously thermally processed), thereby eliminating manufacturing complexity, cycle time and cost to produce the solar cell device. Embodiments of the invention may also provide a method and solar cell structure that requires a reduced amount of a metallization paste on a rear surface of the substrate to form a rear surface contact structure and, thus, reduce the cost of the formed solar cell device.

摘要翻译： 本发明的实施例涉及制造太阳能电池的方法。 特别地，本发明的实施例同时提供同时在太阳能电池基板的第一和第二表面上同时共烧（例如热处理）金属层，以在一个步骤中完成金属化处理。 通过这样做，形成在太阳能电池基板的第一表面和第二表面上的金属层被共烧（例如，同时热处理），从而消除了制造太阳能电池装置的制造复杂性，周期时间和成本。 本发明的实施例还可以提供一种方法和太阳能电池结构，其需要在基板的后表面上减少金属化浆料的量以形成后表面接触结构，并因此降低形成的太阳能电池器件的成本。

公开(公告)号：US08309446B2

公开(公告)日：2012-11-13

申请号：US12504216

申请日：2009-07-16

申请人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

发明人： Timothy W. Weidman ,  Rohit Mishra ,  Michael P. Stewart ,  Yonghwa Chris Cha ,  Kapila P. Wijekoon ,  Hongbin Fang

IPC分类号： H01L21/225 ,  H01L21/385

CPC分类号： H01L31/022425 ,  H01L21/67155 ,  H01L31/0236 ,  H01L31/1876 ,  Y02E10/50 ,  Y02P70/521

摘要： Embodiments of the invention contemplate the formation of a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming a doping layer on a back surface of a substrate, heating the doping layer and substrate to cause the doping layer diffuse into the back surface of the substrate, texturing a front surface of the substrate after heating the doping layer and the substrate, forming a dielectric layer on the back surface of the substrate, removing portions of the dielectric layer from the back surface to from a plurality of exposed regions of the substrate, and depositing a metal layer over the back surface of the substrate, wherein the metal layer is in electrical communication with at least one of the plurality of exposed regions on the substrate, and at least one of the exposed regions has dopant atoms provided from the doping layer.

摘要翻译： 本发明的实施例考虑使用新颖的处理顺序形成高效太阳能电池来形成太阳能电池装置。 在一个实施例中，所述方法包括在衬底的背表面上形成掺杂层，加热掺杂层和衬底以使掺杂层扩散到衬底的背面，在加热掺杂之后纹理化衬底的前表面 在基板的背面上形成电介质层，从基板的多个露出区域的背面去除电介质层的一部分，在该基板的背面上沉积金属层 ，其中所述金属层与所述衬底上的所述多个暴露区域中的至少一个电连通，并且所述暴露区域中的至少一个具有从所述掺杂层提供的掺杂剂原子。