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    GaN-based radiation-emitting thin-layered semiconductor component
    3.
    发明授权
    GaN-based radiation-emitting thin-layered semiconductor component 有权
    GaN基辐射发射薄层半导体元件

    公开(公告)号：US07943944B2

    公开(公告)日：2011-05-17

    申请号：US10523551

    申请日：2003-06-20

    申请人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L29/22 ,  H01L29/24

    CPC分类号： H01L33/20 ,  H01L33/32

    摘要： A radiation-emitting thin-film semiconductor component with a multilayer structure (12) based on GaN, which contains an active, radiation-generating layer (14) and has a first main area (16) and a second main area (18)—remote from the first main area—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main area (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main area (18) of the multilayer structure is patterned one- or two-dimensionally.

    摘要翻译： 一种具有基于GaN的多层结构（12）的辐射发射薄膜半导体部件，其包含有源辐射产生层（14）并具有第一主区域（16）和第二主区域（18） 远离第一主区域 - 用于耦合在有源辐射产生层中产生的辐射。 此外，多层结构（12）的第一主区域（16）耦合到反射层或界面，并且邻接多层结构的第二主区域（18）的多层结构的区域（22）被图案化 一维或二维。

    Method for production of a radiation-emitting semiconductor chip
    6.
    发明授权
    Method for production of a radiation-emitting semiconductor chip 有权
    辐射发射半导体芯片的制造方法

    公开(公告)号：US08273593B2

    公开(公告)日：2012-09-25

    申请号：US13027810

    申请日：2011-02-15

    申请人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

    发明人： Berthold Hahn ,  Stephan Kaiser ,  Volker Härle

    IPC分类号： H01L21/66 ,  H01L21/30

    CPC分类号： H01L33/22 ,  H01L33/0079

    摘要： A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.

    摘要翻译： 一种用于对薄膜发​​光二极管芯片的半导体层序列的辐射发射表面进行微图形化的方法，其中在衬底上生长半导体层序列，在半导体层序列上形成或施加镜面层， 在半导体层序列中在半导体层序列中产生的至少一部分辐射反射回半导体层序列并且朝向镜面层，半导体层序列与衬底分离，并且半导体层的分离表面 衬底分离的层序列被蚀刻剂蚀刻，蚀刻剂主要在晶体缺陷处蚀刻并选择性地蚀刻分离表面处的不同晶面。

    Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor
    7.
    发明授权
    Method for fabricating a light-emitting device based on a gallium nitride-based compound semiconductor, and light-emitting device based on a gallium nitride-based compound semiconductor 有权
    基于氮化镓系化合物半导体的发光元件的制造方法以及基于氮化镓系化合物半导体的发光元件

    公开(公告)号：US07482181B2

    公开(公告)日：2009-01-27

    申请号：US10762097

    申请日：2004-01-20

    申请人： Berthold Hahn ,  Andreas Hangleiter ,  Volker Härle

    发明人： Berthold Hahn ,  Andreas Hangleiter ,  Volker Härle

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L33/02 ,  H01L33/32

    摘要： A light-emitting device is based on a gallium nitride-based compound semiconductor. A light-emitting layer with a first and a second main surface is formed from a compound semiconductor based on gallium nitride. A first coating layer, which is joined to the first main surface of the light-emitting layer, is formed from an n-type compound semiconductor based on gallium nitride. The composition of which differs from that of the compound semiconductor of the light-emitting layer. A second coating layer, which is joined to the second main surface of the light-emitting layer, is formed from a p-type compound semiconductor based on gallium nitride, the composition of which differs from that of the compound semiconductor of the light-emitting layer. To improve the light yield of the device, the thickness of the light-emitting layer in the vicinity of dislocations is configured to be lower than in the remaining regions.

    摘要翻译： 发光器件基于氮化镓基化合物半导体。 具有第一和第二主表面的发光层由基于氮化镓的化合物半导体形成。 与发光层的第一主表面接合的第一涂层由基于氮化镓的n型化合物半导体形成。 其组成与发光层的化合物半导体的组成不同。 与发光层的第二主表面接合的第二涂层由基于氮化镓的p型化合物半导体形成，其组成与发光的化合物半导体的组成不同 层。 为了提高器件的光产量，位错附近的发光层的厚度被配置为低于其余区域中的厚度。

    Light emitting-diode chip and a method for producing same
    8.
    发明授权
    Light emitting-diode chip and a method for producing same 有权
    发光二极管芯片及其制造方法

    公开(公告)号：US07319247B2

    公开(公告)日：2008-01-15

    申请号：US10258340

    申请日：2001-03-16

    申请人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

    发明人： Stefan Bader ,  Berthold Hahn ,  Volker Härle ,  Hans-Jürgen Lugauer ,  Manfred Mundbrod-Vangerow

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence (3) is provided on substantially the full area of its p-side (9) with a reflective, bondable p-contact layer (6). The substrate (2) is provided on its main surface (10) facing away from the epitaxial layer sequence (3) with a contact metallization (7) that covers only a portion of said main surface (10), and the decoupling of light from the chip (1) takes place via a bare region of the main surface (10) of the substrate (2) and via the chip sides (14). A further LED chip has epitaxial layers only. The p-type epitaxial layer (5) is provided on substantially the full area of the main surface (9) facing away from the n-conductive epitaxial layer (4) with a reflective, bondable p-contact layer (6), and the n-conductive epitaxial layer (4) is provided on its main surface facing away from the p-conductive epitaxial layer (5) with an n-contact layer (7) that covers only a portion of said main surface (8). The decoupling of light from the chip (1) takes place via the bare region of the main surface (8) of the n-conductive epitaxial layer (4) and via the chip sides (14).

    摘要翻译： 一种LED芯片，其包括导电和无辐射基板，其中外延层序列（3）在其p侧（9）的基本上整个区域上设置有反射的，可粘合的p接触层（6）。 衬底（2）在其主表面（10）上设置为背离外延层序列（3），接触金属化（7）仅覆盖所述主表面（10）的一部分，并且光 芯片（1）经由衬底（2）的主表面（10）的裸露区域和芯片侧面（14）发生。 另外的LED芯片仅具有外延层。 p型外延层（5）通过反射型可结合的p接触层（6）设置在主表面（9）的背离n导电外延层（4）的大致整个区域上，并且 n导电外延层（4）在其主表面上设置有远离p导电外延层（5）的n-接触层（7），其仅覆盖所述主表面（8）的一部分。 来自芯片（1）的光的去耦通过n导电外延层（4）的主表面（8）的裸露区域和芯片侧（14）进行。

    Method for fabricating a semiconductor component based on GaN
    9.
    发明授权
    Method for fabricating a semiconductor component based on GaN 有权
    用于制造基于GaN的半导体元件的方法

    公开(公告)号：US08809086B2

    公开(公告)日：2014-08-19

    申请号：US13398425

    申请日：2012-02-16

    申请人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    发明人： Stefan Bader ,  Dominik Eisert ,  Berthold Hahn ,  Volker Härle

    IPC分类号： H01L21/20

    CPC分类号： H01L33/405 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/44

    摘要： A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

    摘要翻译： 半导体部件具有多个GaN基层，其优选用于在制造工艺中产生的辐射。 在该过程中，将多个GaN基层施加到包括基板主体和中间层的复合基板上。 衬底体的热膨胀系数与GaN基层的热膨胀系数相似或优选地大于GaN基层，并且GaN基层沉积在中间层上。 中间层和基板主体优选通过晶片接合工艺接合。