摘要:
An output of a voltage regulator is a core voltage line that runs adjacent to a die attach area on a packaging substrate. An input of the voltage regulator is typically coupled to a power supply which, in one embodiment, is also an I/O voltage line that runs adjacent to the die attach area. In one embodiment, the core voltage line is shaped as a ring encircling the die attach area on the packaging substrate. In another embodiment, the I/O voltage line is also shaped as a ring encircling the die attach area on the packaging substrate. Further, a semiconductor die having at least one I/O Vdd bond pad and at least one core Vdd bond pad can be mounted in the die attach area. The I/O Vdd bond pad and the core Vdd bond pad can be connected, respectively, to the I/O voltage ring and the core voltage ring.
摘要翻译:电压调节器的输出是与包装衬底上的管芯附着区相邻的核心电压线。 电压调节器的输入通常耦合到电源,在一个实施例中,电源也是与芯片附接区域相邻的I / O电压线。 在一个实施例中,芯电压线被成形为环绕包装衬底上的管芯附着区域的环。 在另一个实施例中,I / O电压线也被成形为环绕包装衬底上的管芯附着区域的环。 此外,具有至少一个I / O Vdd接合焊盘和至少一个芯Vdd接合焊盘的半导体管芯可以安装在管芯附着区域中。 I / O Vdd接合焊盘和内核Vdd接合焊盘可以分别连接到I / O电压环和核心电压环。
摘要:
One embodiment comprises a printed circuit board having a cavity. A leadframe having a leadframe paddle and at least one lead is situated with the cavity. A reference plane is situated within the printed circuit board at a predetermined distance below the at least one lead in a manner so as to result in a controlled impedance of the at least one lead. A total lead length of the at least one lead consists of an encased lead length and a free space lead length. By controlling the predetermined distance, the dielectric constant of the mold compound, the dielectric constant of the printed circuit board, the total lead length, the encased lead length, and the free space lead length of the at least one lead, the disclosed embodiment results in a controlled impedance of the at least one lead.
摘要:
In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.
摘要:
A pin grid array package comprises a number of signal pins and ground pins. At least one of the signal pins is a controlled impedance signal pin, i.e. a signal pin whose impedance is adjusted and/or reduced according to the present invention. The pin grid array package also includes a number of ground planes and signal planes. A controlled impedance signal pin is coupled to one of the signal planes by means of a signal via. A number of ground pins surround the controlled impedance signal pin. By varying the arrangement, number, and separation distance between the ground pins and the controlled impedance signal pin, the impedance of the signal pin is adjusted and/or reduced. Depending on the particular circuit or logic function assigned to a signal pin and its adjacent signal pin, a different degree of impedance control and/or reduction can be achieved by the present invention.
摘要:
According to one embodiment, a number of trace metal segments or conductors are patterned onto a top surface of a substrate suitable for receiving and housing a semiconductor die. In one embodiment, an insulator layer covers the trace metal segments and separates them from a high permeability core which is mounted on top of the insulator layer. The insulator layer can comprise, for example, solder mask while the high permeability core can comprise, for example, a ferrite rod. In one embodiment, a number of bonding wires are passed over the high permeability core and make connections to respective trace metal segments under the core so as to create an inductor winding around the core. The terminals of the inductor so formed can be connected to a substrate bond pad and/or to a semiconductor die bond pad.
摘要:
A semiconductor device is provided in the form of a chip carrier (e.g., chip/IC scale carrier for RF applications) that includes an integrated circuit chip attached to a die attach pad. The device has an interconnect substrate having an upper surface and a lower surface, with a plurality of vias passing through the thickness of the interconnect substrate from the upper surface to the lower surface. The die attach pad is located on the upper surface of the interconnect substrate, and a heat spreader is located on the lower surface of the interconnect substrate. A first group of vias is positioned to intersect both the die attach pad and the heat spreader. A second group of vias is positioned away from the die attach pad and the heat spreader. The upper surface has a plurality of bond pads that are abutting the second group of vias and the lower surface has a plurality of lands that are also abutting the second group of vias.
摘要:
Structure and method for fabrication of a leadless chip carrier have been disclosed. A disclosed embodiment comprises a substrate having a top surface for receiving a semiconductor die. The disclosed embodiment also comprises a printed circuit board attached to a bottom surface of the substrate. The disclosed embodiment further comprises at least one via in the substrate, which provides an electrical connection between a signal bond pad of the semiconductor die and the printed circuit board. The at least one via also electrically connects a substrate bond pad and the printed circuit board. The substrate bond pad is further connected to the signal bond pad of the semiconductor die by a signal bonding wire. The at least one via further provides an electrical connection between the signal bond pad of the semiconductor die and a land that is electrically connected to the printed circuit board.
摘要:
According to one embodiment, a semiconductor die is situated in a cutout section of a substrate. In one embodiment, the substrate is situated on a printed circuit board such that the semiconductor die situated in the cutout section of the substrate is also situated on a support pad on the top surface of the printed circuit board. In one embodiment, a semiconductor die bond pad on the semiconductor die is connected to a substrate bond pad on the substrate. In one embodiment, an interconnect trace on the substrate is connected to an interconnect pad on the top surface of the printed circuit board.
摘要:
A leadframe includes at least one peripheral lead secured to a paddle. A paddle solder bump pad and a peripheral solder bump pad are respectively situated on the at least one peripheral lead and the paddle. A first recess is adjacent to the paddle solder bump pad and a second recess is adjacent to the peripheral solder bump pad. A semiconductor die having at least first and second solder bumps is situated on the leadframe such that the first solder bump is soldered to the paddle solder bump pad while the second solder bump is soldered to the peripheral solder bump pad. The first and second recesses adjacent to respectively the paddle solder bump pad and the peripheral solder bump pad prevent solder from flowing out of the solder bump pad areas during solder reflow process. In this manner, the potential shorting of adjacent solder bump pads is prevented.
摘要:
A semiconductor device and method that provides for the manufacture of semiconductor devices using high temperature wire bonding in combination with build-up layers having a low glass transition temperature. Anchors are created to serve as thermal gateways, during wire bonding, for bonding pads located on the upper surface of the build-up layers. The anchors pass through the thickness of the build-up layers and contact the PCB core layer.